Spin reflection-induced field-free magnetization switching in perpendicularly magnetized Mgo/Pt/Co heterostructures by Jin, Tianli, Lim, Gerard Joseph, Poh, Han Yin, Wu, Shuo, Tan, Funan, Lew, Wen Siang

“…Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. …”
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GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching by Ali, Asif, Abbas, Haider, Li, Jiayi, Ang, Diing Shenp

“…A double stacked monochalcogenide GeS-based conducting-bridge random access memory (CBRAM) device with a IGZO buffer layer is investigated for highly improved resistive memory characteristics. …”
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Investigation on the elastic properties and crystallization dynamics of phase-change memory material by Lu, Fei

“…In the fabrication and operation of phase-change random access memory (PCRAM) devices, the as-deposition and pre-annealing temperatures are important parameters that affect the amorphization and crystallization processes. …”
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GraphMMU: Memory Management Unit for Sparse Graph Accelerators by Han, Jianglei, Kapre, Nachiket, Bean, Andrew, Moorthy, Pradeep, Siddhartha

“…When using an AXI DMA engine configured in FPGA logic and programmed in AXI register mode from the CPU, we can improve DRAM performance by as much as 2.4× over naïve random access on the CPU. In this mode, we use the host CPU to trigger DMA transfer by writing appropriate control information in the internal register of the DMA engine. …”
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Performance analysis of 22NM FinFET-based 8T SRAM cell by Hasan Baseri, Nur Hasnifa

“…Researchers have found that FinFET is one of the outstanding nominee to overcome this issue since FinFET has better control over the channel and the lower overall capacitance which will increase the performance of the 6T Static Random Access Memory (SRAM) circuit design. It will help in reducing bitline loading and hence improve SRAM performance. …”
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The Age of Information in Wireless Cellular Systems: Gaps, Open Problems, and Research Challenges by Elena Zhbankova, Abdukodir Khakimov, Ekaterina Markova, Yuliya Gaidamaka

“…Specifically, we identify that the majority of the models considered to date: (i) do not account for service processes of wireless channel that utilize orthogonal frequency division multiple access (OFDMA) technology and are able to serve more than a single packet in a time slot; (ii) neglect the specifics of the multiple access schemes utilized for mMTC communications, specifically, multi-channel random access followed by data transmission; (iii) do not consider special and temporal correlation properties in the set of end systems that may arise naturally in state monitoring applications; and finally, (iv) only few studies have assessed those practical use cases where queuing may happen at more than a single node along the route. …”
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Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes by Donglin Zhang, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han, Honghu Yang, Jinhui Cheng, Qingting Ding, Haijun Jiang, Jianguo Yang, Hangbing Lv

“…Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. …”
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Interfacial modulation of magnetic relaxation and electrical characteristic in RuO2/CrO2 antiferromagnet-half metal bilayer by Zhenhua Zhang, Yong Liu, Zhihong Lu, Rui Xiong

“…Half-metallic chromium dioxide (CrO2) is a promising candidate in magnetic random-access memory (MRAM) devices due to its nearly full spin polarization and ultralow Gilbert damping at room temperature. …”
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An Energy-Efficient Time-Domain Analog CMOS BinaryConnect Neural Network Processor Based on a Pulse-Width Modulation Approach by Masatoshi Yamaguchi, Goki Iwamoto, Yuta Nishimura, Hakaru Tamukoh, Takashi Morie

“…In the chip, memory cells of static-random-access memory (SRAM) are used for synaptic connection weights. …”
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An FPGA-Based Performance Analysis of Hardware Caching Techniques for Blockchain Key-Value Database by Muhammad Faisal Siddiqui, Farman Ali, Muhammad Awais Javed, Muhammad Badruddin Khan, Abdul Khader Jilani Saudagar, Mohammed Alkhathami, Mozaherul Hoque Abul Hasanat

“…We design the 2-way and 4-way caching techniques on Block Random-Access Memory (BRAM) and compare them with the conventional direct-mapped caching technique in terms of cache hits and cache misses. …”
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Development of a Standardized Chemiluminescence Immunoassay for the Detection of Autoantibodies Against Human M-Type Phospholipase A2 Receptor in Primary Membranous Nephropathy by Cornelia Dähnrich, Sandra Saschenbrecker, Iva Gunnarsson, Wolfgang Schlumberger, Pierre Ronco, Hanna Debiec

“…It thus presents a promising alternative tool for accurate anti-PLA2R testing, with the advantage of rapid turnaround times and fully automated random-access processing. Keywords: anti-PLA2R, autoantibody, chemiluminescence immunoassay, membranous nephropathy, phospholipase A2 receptor…”
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Cooperative LBT Design and Effective Capacity Analysis for 5G NR Ultra Dense Networks in Unlicensed Spectrum by Hengguo Song, Qimei Cui, Yu Gu, Gordon L. Stuber, Yong Li, Zesong Fei, Chongtao Guo

“…For the IEEE 802.11 Wi-Fi networks, a contention-based random access protocol is adopted, which cannot guarantee the Quality of Service (QoS). …”
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Fuzzy logic based cross-layer design to improve Quality of Service in Mobile ad-hoc networks for Next-gen Cyber Physical System by Nadine Hasan, Ayaskanta Mishra, Arun Kumar Ray

“…Most of MANETs use Contention-based Distributed Coordination Function (DCF) random Access Media Access Control (MAC) and a generic TCP/IP stack implementation. …”
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Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics by Yu-De Lin, Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Sk. Ziaur Rahaman, Kan-Hsueh Tsai, Chien-Hua Hsu, Wei-Su Chen, Pei-Hua Wang, Ya-Chin King, Chrong Jung Lin

“…Abstract A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. …”
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A Fast Weight Control Strategy for Programmable Linear RAM Based on the Self-Calibrating Erase Operation by Yanfei Li, Yinchi Liu, Xinlong Zhou, Jining Yang, Zehui Li, Yihang Mei, Wenjie Yu, Bao Zhu, Xiaohan Wu, Shijin Ding, Wenjun Liu

“…Programmable linear random-access memory (PLRAM) for high-precision weight control is proposed to tear down the wall. …”
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A CNN-Based Post-Processing Algorithm for Video Coding Efficiency Improvement by Haiwu Zhao, Ming He, Guowei Teng, Xiwu Shang, Guozhong Wang, Yiyan Feng

“…Compared to HEVC baseline, our approach achieves an average BD-rate reduction of 10.3%, 8.9%, 13.1% and 11.8% in terms of CS-PSNR for random access, all intra, low delay P and low delay B configurations, respectively. …”
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An Efficient Wildfire Detection System for AI-Embedded Applications Using Satellite Imagery by George L. James, Ryeim B. Ansaf, Sanaa S. Al Samahi, Rebecca D. Parker, Joshua M. Cutler, Rhode V. Gachette, Bahaa I. Ansaf

“…The computational cost is evaluated based on the simulation of deploying the neural network model on an Arduino Nano 33 BLE device, including Flash usage, peak random access memory (RAM) usage, and network inference time. …”
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Improved Environment Stability of Y₂O₃ RRAM Devices with Au Passivated Ag Top Electrodes by Hae-In Kim, Taehun Lee, Won-Yong Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Sin-Hyung Lee, Kwangeun Kim, Jaewon Jang

“…In this study, we fabricated sol-gel-processed Y₂O₃-based resistive random-access memory (RRAM) devices. The fabricated Y₂O₃ RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. …”
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Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure by Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang

“…In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using technology computer-aided design simulation. …”
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Optimization of the multi-mem response of topotactic redox La1/2Sr1/2Mn1/2Co1/2O3−x by W. Román Acevedo, M. H. Aguirre, C. Ferreyra, M. J. Sánchez, M. Rengifo, C. A. M. van den Bosch, A. Aguadero, B. Noheda, D. Rubi

“…Memristive systems emerge as strong candidates for the implementation of resistive random access memories and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. …”
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