High-Quality Single-Crystalline <i>β</i>-Ga₂O₃ Nanowires: Synthesis to Nonvolatile Memory Applications by Chandrasekar Sivakumar, Gang-Han Tsai, Pei-Fang Chung, Babu Balraj, Yen-Fu Lin, Mon-Shu Ho

“…One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. …”
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A Novel Tensor CS-Based NOMA MIMO System for the Downlink of Massive Mission-Critical MTC in 5G and Beyond by Kesen He, Yangqing Li, Yanbin Zhang, Kai Zhang, Changchuan Yin

“…The introduction of 5G and beyond systems brings new challenges for efficiently supporting the random access of a massive number of users with ultra-reliable low-latency requirements. …”
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Giant Electroresistance in Ferroionic Tunnel Junctions by Jiankun Li, Ning Li, Chen Ge, Heyi Huang, Yuanwei Sun, Peng Gao, Meng He, Can Wang, Guozhen Yang, Kuijuan Jin

“…Summary: Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. …”
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An Analytic Transform Kernel Derivation Method for Video Codecs by Ankit Kumar, Bumshik Lee

“…Similarly, the simulation results of random access (RA) configuration are Y = −0.01%, U = 0.09%, V = 0.06%, and the encoding and decoding times are 101% and 100%, respectively. …”
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Selective Power-Loss-Protection Method for Write Buffer in ZNS SSDs by Junseok Yang, Seokjun Lee, Sungyong Ahn

“…Most SSDs (solid-state drives) use an internal DRAM (Dynamic Random Access Memory) to improve the I/O performance and extend SSD lifespan by absorbing write requests. …”
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A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices by Horatio R. J. Cox, Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Adnan Mehonic, Paul R. Shearing, Sarah Fearn, Anthony J. Kenyon

“…The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices. To test models of oxygen movement in ReRAM devices beyond what has previously been possible, we present a new nanoscale analysis method. …”
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Design and Validation of a Breathing Detection System for Scuba Divers by Corentin Altepe, S. Murat Egi, Tamer Ozyigit, D. Ruzgar Sinoplu, Alessandro Marroni, Paola Pierleoni

“…The detection algorithm presents a maximum delay of 5.2 s and requires only 800 bytes of random-access memory (RAM). The results were compared against the analysis of video records of the dives by two blinded observers and proved a sensitivity of 97.6% on the data set. …”
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Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi by Miao Jiang, Eisuke Matsushita, Yota Takamura, Le Duc Anh, Shigeki Nakagawa, Shinobu Ohya, Masaaki Tanaka

“…To optimize the writing and reading performance of magnetic random-access memory (MRAM) devices, achieving current-induced spin–orbit torque (SOT) magnetization switching in perpendicularly magnetized full Heusler alloys is vitally important. …”
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The magnitude of undiagnosed diabetes and Hypertension among adult psychiatric patients receiving antipsychotic treatment by Agete Tadewos Hirigo, Tesfaye Teshome

“…Serum lipid profiles and fasting blood sugar (FBS) were measured using the A25™ BioSystem Random Access chemistry analyzer. To identify predictors of hyperglycemia and raised blood pressure, multiple linear regression analysis was done using SPSS version 23. …”
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Multistate resistive switching behaviors for neuromorphic computing in memristor by B. Sun, S. Ranjan, G. Zhou, T. Guo, Y. Xia, L. Wei, Y.N. Zhou, Y.A. Wu

“…Conventional Von Neumann computing systems encounter increasing challenges in the big-data era due to the constraints by the separated data storage and processing. Resistive random-access memory provides dual functionalities of data storage and computing at the same position without data transmission. …”
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Efficient Deconvolution Architecture for Heterogeneous Systems-on-Chip by Stefania Perri, Cristian Sestito, Fanny Spagnolo, Pasquale Corsonello

“…Moreover, it dissipates less than 500mW@200MHz and occupies 5.6%, 4.1%, 17%, and 96%, respectively, of the look-up tables, flip-flops, random access memory, and digital signal processors available on-chip. …”
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A 177 ppm RMS Error-Integrated Interface for Time-Based Impedance Spectroscopy of Sensors by Antonio Vincenzo Radogna, Simonetta Capone, Luca Francioso, Pietro Aleardo Siciliano, Stefano D’Amico

“…It also relaxes the sampling frequency of the ADC leading, along with the lack of random access memory (RAM) usage, to a reduced circuit complexity. …”
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Multistate structures in a hydrogen-bonded polycatenation non-covalent organic framework with diverse resistive switching behaviors by Shimin Chen, Yan Ju, Yisi Yang, Fahui Xiang, Zizhu Yao, Hao Zhang, Yunbin Li, Yongfan Zhang, Shengchang Xiang, Banglin Chen, Zhangjing Zhang

“…Triggered by the external stimulus of electrical field E at room temperature, HOF-FJU-52 has excellent resistive random-access memory (RRAM) behaviors, comparable to the state-of-the-art materials. …”
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Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al₂O₃ Based CBRAM by Asim Senapati, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta, Siddheswar Maikap

“…Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al₂O₃/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al₂O₃ device shows superior memory parameters such as low forming voltage and higher switching uniformity as compared to the 20 nm-thick switching layer, owing to higher electric field across the material. …”
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Valley-Spin Hall Effect-Based Nonvolatile Memory With Exchange-Coupling-Enabled Electrical Isolation of Read and Write Paths by Karam Cho, Sumeet Kumar Gupta

“…Key advantages of VSH-based magnetic random access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM include access transistor-less compact bit-cell and low-power switching of perpendicular magnetic anisotropy (PMA) magnets. …”
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Giant Extrinsic Spin Hall Effect in Platinum‐Titanium Oxide Nanocomposite Films by Xinkai Xu, Dainan Zhang, Bo Liu, Hao Meng, Jiapeng Xu, Zhiyong Zhong, Xiaoli Tang, Huaiwu Zhang, Lichuan Jin

“…Abstract Although the spin Hall effect provides a pathway for efficient and fast current‐induced manipulation of magnetization, application of spin–orbit torque magnetic random access memory with low power dissipation is still limited to spin Hall materials with low spin Hall angles or very high resistivities. …”
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Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure by Xu Zhang, Chunsheng Jiang, Gang Dai, Le Zhong, Wen Fang, Ke Gu, Guoping Xiao, Shangqing Ren, Xin Liu, Sanyong Zou

“…Encryption is an important step for secure data transmission, and a true random number generator (TRNG) is a key building block in many encryption algorithms. Static random-access memory (SRAM) chips can be easily available sources of true random numbers, benefiting from noisy SRAM cells whose start-up values flip between different power-on cycles. …”
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Memristive Non-Volatile Memory Based on Graphene Materials by Zongjie Shen, Chun Zhao, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Jiacheng Wen, Yanbo Huang, Puzhuo Li, Cezhou Zhao

“…Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. …”
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Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM by Zhenzhong Zhang, Fang Wang, Kai Hu, Yu She, Sannian Song, Zhitang Song, Kailiang Zhang

“…In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. …”
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Towards a robust CFD model for aeration tanks for sewage treatment – a lab-scale study by Anna M. Karpinska, John Bridgeman

“…Abbreviations: ADV: Acoustic Doppler velocimetry; AS: Activated sludge; ASM1: Activated Sludge Model No. 1; BOD: Biochemical oxygen demand; CCD: Charge-coupled device; CFD: Computational fluid dynamics; COD: Chemical oxygen demand; CPU: Central processing unit; DO: Dissolved oxygen; GCI: Grid convergence index; HPC: High performance computing; IAC: Interfacial area concentration; MRF: Multiple reference frame; MLSS: Mixed liquor suspended solids; PBM: Population balance models; PIV: Particle image velocimetry; PST: Phase-space thresholding; RAM: Random access memory; RANS: Reynolds-averaged Navier-Stokes; SNR: Signal-to-noise-ratio; SST: Shear stress transport…”
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