Research on Prediction Method for Heavy Ion SEE Cross-section Based on Proton SEE Cross-section by MA Xu;HAN Jinhua;GUO Gang;CHEN Qiming;LIU Jiancheng;ZHAO Shuyong;ZHANG Zheng

“…The problem of calculating heavy ion SEE cross-sections from proton SEE cross-sections is transformed into the problem of solving the equation, whose unknows are the four parameters of Weibull function which describe the change of heavy ion SEE cross-sections with LET, and uses particle swarm optimization (PSO) algorithm to solve the problem. Three static random-access memories (SRAMs) with different feature sizes was selected to verify this method, and the results are in good agreement with their heavy ion SEE experimental data. …”
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A General Framework for Sorting Large Data Sets Using Independent Subarrays of Approximately Equal Length by Shahriar Shirvani Moghaddam, Kiaksar Shirvani Moghaddam

“…The third experiment shows the effectiveness of the proposed parallel framework to the parallel sorting based on the random-access machine model. Finally, we prove that the mean-based pivot is as efficient as the median-based and much better than the random pivot for making subarrays of approximately equal length.…”
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Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability by David Lehninger, Aditya Prabhu, Ayse Sünbül, Tarek Ali, Fred Schöne, Thomas Kämpfe, Kati Biedermann, Lisa Roy, Konrad Seidel, Maximilian Lederer, Lukas M. Eng

“…Memory concepts based on ferroelectric HfO2 like the ferroelectric field effect transistor (FeFET) and the ferroelectric random access memory (FeRAM) are promising to satisfy these requirements. …”
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Comparative Rate-Distortion-Complexity Analysis of VVC and HEVC Video Codecs by Alexandre Mercat, Arttu Makinen, Joose Sainio, Ari Lemmetti, Marko Viitanen, Jarno Vanne

“…For a fair comparison, all our experiments were conducted under the VTM common test conditions (CTC) that define 10-bit configurations of the VTM codec for the addressed All Intra (AI), Random Access (RA), and Low Delay B (LB) conditions. …”
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Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing by Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng

“…Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F² DRAM cell transistors (F = pitch/2). …”
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THE DETERMINATION OF MEDIANS OF BIOCHEMICAL MATERNAL SERUM MARKERS IN HEALTHY WOMEN GIVING BIRTH TO NORMAL BABIES by Noreen ., Asif Nawaz, Tariq Bin Sharif, Hamza Akhtar, Quratulain ., Aamir Ijaz

“…Blood sample for serum human chorionic gonadotropin (HCG) was analyzed on random access immulite 2000, alpha-fetoprotein (AFP) was analyzed on ADVIA Centaur, unconjugated estriol (uE3) and Inhibin A measured by Enzyme-Linked Immunosorbent Assay (ELISA) method by PR 4100 Micro plate Reader. …”
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ReARTSim: an ReRAM ARray Transient Simulator with GPU optimized runtime acceleration by Yu Sui, Tianhe Yu, Shiming Song

“…Addressing the need to mitigate data movement challenges, process-in-memory designs, especially resistive random-access memory (ReRAM)-based solutions, have emerged as compelling candidates (Verma et al 2019 IEEE Solid-State Circuits Mag. 11 43–55; Sze et al 2017 Proc. …”
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Evaluation of the Xpert Xpress GBS test for rapid detection of group B Streptococcus in pregnant women by Feiling Wang, Lehui Yi, Fang Ming, Rui Dong, Feng Wang, Ruirui Chen, Xiaoling Hu, Xuri Chen, Bo Sun, Yi-Wei Tang, Yuanfang Zhu, Lijuan Wu

“…The hands-on time and running time of the Xpert Xpress GBS were 1 minute and less than 1 hour, respectively. As a random-access, integrated device, the Xpert Xpress GBS test efficiently and accurately screens rectovaginal swabs for GBS colonization in pregnant women. …”
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Bulk Rashba‐Type Spin Splitting in Non‐Centrosymmetric Artificial Superlattices by Woo Seung Ham, Thi Huynh Ho, Yoichi Shiota, Tatsuya Iino, Fuyuki Ando, Tetsuya Ikebuchi, Yoshinori Kotani, Tetsuya Nakamura, Daisuke Kan, Yuichi Shimakawa, Takahiro Moriyma, Eunji Im, Nyun‐Jong Lee, Kyoung‐Whan Kim, Soon Cheol Hong, Sonny H. Rhim, Teruo Ono, Sanghoon Kim

“…In this regard, the high charge‐to‐spin conversion efficiency is required for magnetization manipulation for developing future memory or logic devices including magnetic random‐access memory. Here, the bulk Rashba‐type charge‐to‐spin conversion is demonstrated in an artificial superlattice without centrosymmetry. …”
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Single ended 12T cntfet sram cell with high stability for low power smart device applications by S. Jayanthi, P. Raja, M. Elangovan, T.S. Murugesh

“…Static random-access memory (SRAM) is the most prevalent type of memory used in current system-on-chips (SOC). …”
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Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor by Qilan Zhong, Yiwei Wang, Yan Cheng, Zhaomeng Gao, Yunzhe Zheng, Tianjiao Xin, Yonghui Zheng, Rong Huang, Hangbing Lyu

“…Hafnia-based FE capacitors in particular have the potential to be used in dynamic random-access memory (DRAM) applications. Obtaining fine structure characterization at ultra-high spatial resolution is helpful for device performance optimization. …”
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Scalable Zero Knowledge Via Cycles of Elliptic Curves by Ben-Sasson, Eli, Chiesa, Alessandro, Tromer, Eran, Virza, Madars

“…Our zk-SNARK implementation runs random-access machine programs and produces proofs of their correct execution, on today’s hardware, for any program running time. …”
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CONV-SRAM: An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networks by Biswas, Avishek, Chandrakasan, Anantha P

“…This paper presents an energy-efficient static random access memory (SRAM) with embedded dot-product computation capability, for binary-weight convolutional neural networks. …”
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Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks by Prabhu, Nagaraj Lakshmana, Loy, Desmond Jia Jun, Dananjaya, Putu Andhita, Lew, Wen Siang, Toh, Eng Huat, Raghavan, Nagarajan

“…In this work, we explore the use of the resistive random access memory (RRAM) device as a synapse for mimicking the trained weights linking neurons in a deep learning neural network (DNN) (AlexNet). …”
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Design of a radiation-hardened-by-design (RHBD) I²C controller by Ng, Wei Yet

“…The I²C controller was integrated into a 50MHz, 32-bit ARM cortex-M0 microprocessor and 16KB static random-access memory (SRAM) IP. By this means, the user can control the I²C operation using the created C programming functions. …”
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Transition metal oxide based resistive RAM for high density non-vilatile memory by Tran, Xuan Anh

“…Recently, Resistive Random Access Memory (RRAM) has emerged as one of promising candidates succeeding the conventional FLASH memory due to its low cost, simple structure, low power dissipation, high endurance and compatibility with CMOS technology. …”
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Hardware acceleration of neural networks with CMOS and post-CMOS devices by Govind Narasimman

“…Though the recent large scale neuromorphic circuits have used localized random access memory for reducing memory operations, this local memory size will not be scalable with increasing size of datasets. …”
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SenAOReFoc: a closed-loop sensorbased adaptive optics and remote focusing control software by Cui, J, Hampson, KM, Wincott, M, Booth, MJ

“…<br> Remote focusing can be performed by scanning the focus axially with a pre-determined axial range, step increment and step number, or by manually adjusting a toggle bar on the GUI for random access remote focusing. The former also incorporates options of whether or not to perform closed-loop AO correction at each remote focusing depth. …”

Reliable Ge2Sb2Te5 based phase-change electronic synapses using carbon doping and programmed pulses by Qiang Wang, Gang Niu, Ruobing Wang, Ren Luo, Zuo-Guang Ye, Jinshun Bi, Xi Li, Zhitang Song, Wei Ren, Sannian Song

“…Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory (PCRAM) have attracted an extensive investigation. …”
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A Design of Real-Time Data Acquisition and Processing System for Nanosecond Ultraviolet-Visible Absorption Spectrum Detection by Meng Xia, Nanjing Zhao, Gaofang Yin, Ruifang Yang, Xiaowei Chen, Chun Feng, Ming Dong

“…The implementation of the filter on the FPGA has been optimized by using a pipelined structure and dual high-speed random-access memory (RAM). As a result, the CMOS linear image sensor successfully captured the spectrum of xenon flash light at the readout clock frequency of 500 kHz and the processing manipulation to the full UV-Vis spectrum data was accomplished at a sub-microsecond speed performance. …”
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