Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM by Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki

“…Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown voltage. …”
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On the robustness of bucket brigade quantum RAM by Srinivasan Arunachalam, Vlad Gheorghiu, Tomas Jochym-O’Connor, Michele Mosca, Priyaa Varshinee Srinivasan

“…We study the robustness of the bucket brigade quantum random access memory model introduced by Giovannetti et al (2008 Phys. …”
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3T2M canted-type x SOT-MRAM: Field-free, high-energy-efficiency, and high-read-margin memory toward cache applications by Long Liu, Di Wang, Huai Lin, Xuefeng Zhao, Ziwei Wang, Nuo Xu, Xi Luo, Nan Gao, Xiaoyong Xue, Cheng Pan, Changqing Xie, Guozhong Xing

“…We propose a novel cell structure of spin–orbit torque (SOT) magnetic random-access memory (MRAM), which consists of three transistors and two canted-type x SOT magnetic tunnel junctions (3T2M) with opposite canting angle (+φ/-φ) on a shared heavy-metal, enabling a self-referencing scheme. …”
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Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS by Wriddhi Chakraborty, Khandker Akif Aabrar, Jorge Gomez, Rakshith Saligram, Arijit Raychowdhury, Patrick Fay, Suman Datta

“…Analog and RF mixed-signal cryogenic-CMOS circuits with ultrahigh gain-bandwidth product can address a range of applications such as interface circuits between superconducting (SC) single-flux quantum (SFQ) logic and cryo-dynamic random-access memory (DRAM), circuits for sensing and controlling qubits faster than their decoherence time for at-scale quantum processor. …”
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Cortex-wide response mode of VIP-expressing inhibitory neurons by reward and punishment by Zoltán Szadai, Hyun-Jae Pi, Quentin Chevy, Katalin Ócsai, Dinu F Albeanu, Balázs Chiovini, Gergely Szalay, Gergely Katona, Adam Kepecs, Balázs Rózsa

“…We monitored VIP neural activity in dozens of cortical regions using three-dimensional random access two-photon microscopy and fiber photometry while mice learned an auditory discrimination task. …”
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The diagnostic accuracy of the GeneXpert ESBL-ampC prototype assay for rapid PCR-based detection of extended-spectrum beta-lactamase genes directly from urine by Sofie C. M. Tops, Claire E. P. Schapendonk, Jordy P. M. Coolen, Fred C. Tenover, Isabella A. Tickler, Willem J. G. Melchers, Heiman F. L. Wertheim

“…All urine samples were screened for the presence of ESBL genes (bla CTX-M2, bla CTX-M14, and bla CTX-M15) with random-access quantitative PCR (qPCR) using the Cepheid GeneXpert ESBL-ampC prototype assay. …”
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Neuromorphic Low-Power Inference on Memristive Crossbars With On-Chip Offset Calibration by Charanraj Mohan, L. A. Camunas-Mesa, Jose M. De La Rosa, Elisa Vianello, Teresa Serrano-Gotarredona, Bernabe Linares-Barranco

“…Monolithic integration of silicon with nano-sized Redox-based resistive Random-Access Memory (ReRAM) devices opened the door to the creation of dense synaptic connections for bio-inspired neuromorphic circuits. …”
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Electron‐Sponge Nature of Polyoxometalates for Next‐Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices by Waqar Ahmad, Nisar Ahmad, Kun Wang, Sumaira Aftab, Yunpeng Hou, Zhengwei Wan, Bei‐Bei Yan, Zhao Pan, Huai‐Ling Gao, Chen Peung, Yang Junke, Chengdu Liang, Zhihui Lu, Wenjun Yan, Min Ling

“…In this review, numerous POM‐frameworks together with desired features of a contender material and inherited properties of POMs are systematically discussed to demonstrate how and why the electron‐sponge‐like nature of POMs is beneficial to design next‐generation water oxidation/reduction electrocatalysts, and neuromorphic nonvolatile resistance‐switching random‐access memory devices. The aim is to converge the attention of scientists who are working separately on electrocatalysts and memory devices, on a point that, although the application types are different, they all hunt for a material that could exhibit electron‐sponge‐like feature to realize boosted performances and thus, encouraging the scientists of two completely different fields to explore POMs as imperious contenders to design next‐generation nanodevices. …”
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Network navigation with scheduling by Wang, Tianheng, Ph. D. Massachusetts Institute of Technology

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How to Run Turing Machines on Encrypted Data by Goldwasser, Shafi, Kalai, Yael Tauman, Popa, Raluca Ada, Vaikuntanathan, Vinod, Zeldovich, Nickolai

“…Specifically, we show: An attribute-based encryption scheme for any polynomial-time Turing machine and Random Access Machine (RAM). A (single-key and succinct) functional encryption scheme for any polynomialtime Turing machine. …”
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Design and optimization of DSP architectures for multi-context FPGA with dynamic reconfiguration by Rakesh Vijayakumara Warrier

“…The current generation of multi-context FPGAs typically use a dynamic reconfigurable architecture based on static Random Access Memory (RAM) to implement multiple configuration planes that enable fast switching between contexts. …”
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Flow-Cytometry Intracellular Detection and Quantification of HIV1 p24 Antigen and Immunocheckpoint Molecules in T Cells among HIV/AIDS Patients by Tessema B, Boldt A, König B, Maier M, Sack U

“…HIV1 p24 antigen FCM results were compared with HIV1 RNA viral load results measured by Alinity M assays on the fully automated random-access platform. We analyzed the data using SPSS 20.Results: The absolute CD4+ and CD4+:CD8+ T-cells ratio showed a significant inverse correlation with HIV1 viral load. …”
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Spin‐Momentum Locking and Ultrafast Spin‐Charge Conversion in Ultrathin Epitaxial Bi1 − xSbx Topological Insulator by E. Rongione, L. Baringthon, D. She, G. Patriarche, R. Lebrun, A. Lemaître, M. Morassi, N. Reyren, M. Mičica, J. Mangeney, J. Tignon, F. Bertran, S. Dhillon, P. Le Févre, H. Jaffrès, J.‐M. George

“…Both surface state robustness and sizeable conversion efficiency in epitaxial Bi1 − xSbx thin films bring new perspectives for ultra‐low power magnetic random‐access memories and broadband THz generation.…”
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Sequence learning in a spiking neuronal network with memristive synapses by Younes Bouhadjar, Sebastian Siegel, Tom Tetzlaff, Markus Diesmann, Rainer Waser, Dirk J Wouters

“…In particular, redox-induced resistive random access memories (ReRAM) devices stand out at many aspects. …”
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Spintronic devices for high-density memory and neuromorphic computing – a review by Chen, Bingjin, Zeng, Minggang, Khoo, Khoong Hong, Das, Debasis, Fong, Xuanyao, Fukami, Shunsuke, Li, Sai, Zhao, Weisheng, Parkin, Stuart S. P., Piramanayagam, S. N., Lim, Sze Ter

“…These latter structures were proposed in 1995 as potential memory elements for a magnetic random-access memory (MRAM) and the first demonstration of this possibility was made in 1999. …”
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Adaptive optics and remote focusing in biomedical microscopy by Cui, J

“…Both volumetric and depth-wise random access imaging functions have been enabled. To fulfil requirements for real-time display in clinical settings, some post-processing and image enhancement techniques are then demonstrated to remove image artefacts and improve image contrast with minimal computational effort. …”

Efficient reconfigurable architectures for 3-D medical image compression by Ahmad, Afandi

“…Moreover, an FPGA-based architecture of the �nite Radon transform (FRAT) with three design strategies has been proposed: direct implementation of pseudo-code with a sequential or pipelined description, and block random access memory (BRAM)based method. An analysis with various medical imaging modalities has been carried out. …”
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More Time-Space Tradeoffs for Finding a Shortest Unique Substring by Hideo Bannai, Travis Gagie, Gary Hoppenworth, Simon J. Puglisi, Luís M. S. Russo

“…We first describe how, given a text <i>T</i> of length <i>n</i> and <i>m</i> words of workspace, with high probability we can find an SUS of length <i>L</i> in <inline-formula><math display="inline"><semantics><mrow><mi>O</mi><mo>(</mo><mi>n</mi><mo>(</mo><mi>L</mi><mo>/</mo><mi>m</mi><mo>)</mo><mo form="prefix">log</mo><mi>L</mi><mo>)</mo></mrow></semantics></math></inline-formula> time using random access to <i>T</i>, or in <inline-formula><math display="inline"><semantics><mrow><mi>O</mi><mo>(</mo><mi>n</mi><mrow><mo>(</mo><mi>L</mi><mo>/</mo><mi>m</mi><mo>)</mo></mrow><msup><mo form="prefix">log</mo><mn>2</mn></msup><mrow><mo>(</mo><mi>L</mi><mo>)</mo></mrow><mo form="prefix">log</mo><mo form="prefix">log</mo><mi>σ</mi><mo>)</mo></mrow></semantics></math></inline-formula> time using <inline-formula><math display="inline"><semantics><mrow><mi>O</mi><mo>(</mo><mrow><mo>(</mo><mi>L</mi><mo>/</mo><mi>m</mi><mo>)</mo></mrow><msup><mo form="prefix">log</mo><mn>2</mn></msup><mi>L</mi><mo>)</mo></mrow></semantics></math></inline-formula> sequential passes over <i>T</i>. …”
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Efficient baseband design and implementation for high-throughput transmitters by Li, Zhipeng, Ph. D. Massachusetts Institute of Technology

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Design of minimum energy driven ultra-low voltage SRAMs and D flip-flop by Wang, Bo

“…The main goal of the research is to explore and demonstrate optimal solutions of Static Random-Access Memory (SRAM) and D Flip-Flop (DFF) circuits in energy or energy-delay space and overcome the limitations imposed by ultra-low supply voltage. …”
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