Opportunistic contention-based feedback protocol for downlink OFDMA systems with mixed traffic by Patachaianand, Rachod, Sandrasegaran, Kumbesan, Mohd. Ramli, Huda Adibah, Basukala, Riyaj

“…This protocol allocates a dedicated feedback channel for each RT user, while it allows all NRT users to compete to send feedback via a contention-based random access feedback channel. The proposed feedback protocol requires a fixed amount of resource to carry feedback from all RT users and some selected NRT users. …”
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Multiple resistive switching behaviours of CH3NH3PbI3 perovskite film with different metal electrodes by How, Gregory Thien Soon, Talik, Noor Azrina, Yap, Boon Kar, Nakajima, Hideki, Tunmee, Sarayut, Goh, Boon Tong

“…Using Al in ITO/CH3NH3PbI3/Al device reveals Resistive Random Access Memory (ReRAM) behaviour with a SET voltage of 4.5 V and can be RESET by applying a negative sweep voltage above 1.3 V due to the formation of iodide vacancy filament. …”

Investigation Of Silver Oxide Nanoparticles In Polymannose Thin Film On Resistive Switching Characteristics by Au Yong, Huey Leen

“…Polymannose thin film has shown remarkable properties that are important in resistive switching random-access memory (ReRAM) and multistate switching memory applications. …”
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Optimization of n-MOS 6T nanowire SRAM bit cell based on nanowires ratio of SiNWTs by Hashim, Yasir, Jabbar, Waheb A.

“…In nowadays technology, the primary memory structure widely used in many digital circuit applications is a six transistor (6T) Static Random Access Memory (SRAM) bit cell. The main reason for minimizing memory bit cell to nanodimensions is to provide the SRAM integrated circuits (ICs) with the possible largest memory size per one chip, and the main unit in 6T SRAM bit cell is the MOSFET. …”
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An efficient fault syndromes simulator for SRAM memories by Wan Hasan, Wan Zuha, Abdul Halin, Izhal, Mohd Sidek, Roslina, Othman, Masuri

“…At present, March test algorithm is used to detect and diagnose all faults related to Random Access Memories. However, the test and diagnosis process are mainly done manually. …”
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Effect Of Fullerene (C60) Concentration In Pectin Polysaccharide Thin Film For Resistive Switching Characterization by Cheong, Yi Huan

“…The biocompatible pectin extracted from citrus peel had been introduced to be fabricated as the insulating layer of the Resistive Random Access Memory (RRAM) devices which exhibits excellent resistive switching characteristics. …”
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Development of a Functional Digital Integrated Circuit Testing System Using Mixed-Mode Technique by Md. Abubaker Sheikh, Md. Liakot Ali

“…Main modules of the SOC are micro-UART (Universal Asynchronous Receiver and Transmitter), a controller, pattern generator, signature analyzer (SA), instruction registers and Random Access Memories (RAMs). A prototype test set-up has been developed for testing IC by implementing the design of the SOC into a Field Programmable Gate Array Logic (FPGA) chip and then by interfacing the FPGA chip with a personal computer (PC) through a Graphical User Interface (GUI). …”
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Fault tolerance of L1 data cache memory induced by intrinsic parameters fluctuation in sub 10nm UTB-SOI MOSFETs by Ahmed, Rabah Abood

“…The failure models are generated corresponding to the individual and combined impact of Random Discrete Dopants in the source/drain regions (RDD), Line Edge Roughness (LER) and Body Thickness Variation (BTV) as the main sources of IPF in next nanometre-scale Ultra-Thin Body Silicon-on Isolator (UTB-SOI) transistor generations on Six-Transistors Static Random Access memory (6T SRAM) cell stability. The L1 cache fault tolerance techniques evaluated are hardware redundancy, parity check,Hamming single error correction double error detection (SECDED), and Hamming triple error detection (TED). …”
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Efficient reconfigurable architectures for 3-D medical image compression by Ahmad, Afandi

“…Moreover, an FPGA-based architecture of the �nite Radon transform (FRAT) with three design strategies has been proposed: direct implementation of pseudo-code with a sequential or pipelined description, and block random access memory (BRAM)based method. An analysis with various medical imaging modalities has been carried out. …”
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Structural, magnetic and microwave properties of bismuth ferrite ceramic with yttrium substitution prepared via modified thermal treatment method by Mustapa Zahari, Rahimah

“…Also, the results suggest that sample x = 0.2 as the potential ferromagnetic applications which possess a high value of Ms making it suitable for the fast processing and higher data storage magnetoelectric random-access memories (MERAM) devices.…”
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