Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests by Shivendra K. Rathaur, Le Trung Hieu, Abhisek Dixit, Edward Yi Chang

Subjects: “…semiconductor device reliability…”
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A Physical Model for the Hysteresis in MoS₂ Transistors by Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser

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Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays by Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni

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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs by Benjamin Iniguez, Arokia Nathan, Alexander Kloes, Yvan Bonnassieux, Krunoslav Romanjek, Micael Charbonneau, Jan Laurens Van Der Steen, Gerwin Gelinck, Thomas Gneiting, Firas Mohamed, Gerard Ghibaudo, Antonio Cerdeira, Magali Estrada, Slobodan Mijalkovic, Ahmed Nejim

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Generating Predictive Models for Emerging Semiconductor Devices by Maximilian Reuter, Andreas Kramer, Dakyung Lee, Jens Trommer, Niladri Bhattacharjee, Giulio Galderisi, Thomas Mikolajick, Klaus Hofmann

Subjects: “…Semiconductor device modeling…”
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A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty by Qunfang Wu, Boyuan Xu, Lan Xiao, Qin Wang

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Active control and switching of broadband electromagnetically induced transparency in symmetric metadevices by Yahiaoui, Riad, Manjappa, Manukumara, Srivastava, Yogesh Kumar, Singh, Ranjan

Subjects: “…Semiconductor device fabrication…”
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2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

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A Mesh Downsampling Algorithm for Equivalent Circuit Network Simulation of Multi-Junction Solar Cells by Kan-Hua Lee, Kenji Araki, Masafumi Yamaguchi

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Impact of Mn/Co substitution on magnetoelectric and structural properties of ZnO nanostructures thin films by Ángela P. Lanchero, Lina F. Prieto, Heiddy P. Quiroz, Jorge A. Calderón, A. Dussan, F. Mesa

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Implementation of TFET SPICE Model for Ultra-Low Power Circuit Analysis by Chika Tanaka, Kanna Adachi, Motohiko Fujimatsu, Akira Hokazono, Yoshiyuki Kondo, Shigeru Kawanaka

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Effect of Substrate Choice on Transient Performance of Lateral GaN FETs by Michael R. Hontz, Rongming Chu, Raghav Khanna

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Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate by Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu

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Automotive Power Module Packaging: Current Status and Future Trends by Yuhang Yang, Lea Dorn-Gomba, Romina Rodriguez, Christopher Mak, Ali Emadi

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Interface trap charges associated reliability analysis of Si/Ge heterojunction dopingless TFET by Suruchi Sharma, Rikmantra Basu, Baljit Kaur

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Classification of methods for measuring current-voltage characteristics of semiconductor devices by Iermolenko Ia. O.

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Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off by Hui Li, Xinglin Liao, Yaogang Hu, Zhangjian Huang, Kun Wang

Subjects: “…power semiconductor device…”
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Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias by Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao

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Parameter Extraction for the PSPHV LDMOS Transistor Model by Kejun Xia, Colin C. McAndrew, Ronald Van Langevelde

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CIM-Spin: a scalable CMOS annealing processor with digital in-memory spin operators and register spins for combinatorial optimization problems by Su, Yuqi, Kim, Hyunjoon, Kim, Bongjin

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