Photocatalytic degradation of selected pharmaceuticals using green fabricated zinc oxide nanoparticles by Mohamed Isa, E. D., Shameli, K., Ch'ng, H. J., Che Jusoh, N. W., Hazan, R.

“…Heterogeneous photocatalysis is one of the popular alternative treatment methods for wastewater. It utilizes semiconductor material as the catalyst and metal oxide such as zinc oxide nanoparticles (ZnO NPs), emerged as the commonly used catalyst. …”

CARACTERIZACIÓN DE LA RESPUESTA DEL ESPECTRÓMETRO AMPTEKXR-100-CdTe MEDIANTE SIMULACIÓN MONTE CARLO CON EL CÓDIGO PENELOPE by N. E. Martín, M. Sofo Haro, M. Valente

“…Cadmium telluride (CdTe) has been introduced as a suitable bulk-sensing semiconductor material that reports higher efficiency compared to silicon diodes. …”
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Effect of Pressure in Post-Hydrothermal Treatment on the Nanostructural Characteristics of ZnO Nanoparticles by Akhmad Herman Yuwono, Daniel Kurniawan, Nofrijon Sofyan, Ghiska Ramahdita, Amalia Sholehah

“…Zinc Oxide (ZnO) is an important semiconductor material due to its broad applications, such as in the fields of electronics, optoelectronics, photocatalysts, and solar cells. …”
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Precision Grinding Technology of Silicon Carbide (SiC) Ceramics by Longitudinal Torsional Ultrasonic Vibrations by Zejiu Ye, Xu Wen, Weiqiang Wan, Fuchu Liu, Wei Bai, Chao Xu, Hui Chen, Pan Gong, Guangchao Han

“…Silicon carbide (SiC) ceramic material has become the most promising third-generation semiconductor material for its excellent mechanical properties at room temperature and high temperature. …”
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High efficiency Cu2MnSnS4 thin film solar cells with SnS BSF and CdS ETL layers: A numerical simulation by Ahmmad Isha, Abu Kowsar, Abdul Kuddus, M. Khalid Hossain, Md Hasan Ali, Md Dulal Haque, Md Ferdous Rahman

“…The quaternary compound copper manganese tin sulfide Cu2MnSnS4 is a potential absorber semiconductor material for fabricating thin film solar cells (TFSC) thanks to their promising optoelectronic parameters. …”
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Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i>₂<i>O</i>₃) Abrasive by Juntao Gong, Weilei Wang, Weili Liu, Zhitang Song

“…Silicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. …”
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Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth by Shengtao Zhang, Guoqing Fu, Hongda Cai, Junzhi Yang, Guofeng Fan, Yanyu Chen, Tie Li, Lili Zhao

“…As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. …”
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Photovoltaic Spectral Responsivity and Efficiency under Different Aerosol Conditions by Dimitra Kouklaki, Stelios Kazadzis, Ioannis-Panagiotis Raptis, Kyriakoula Papachristopoulou, Ilias Fountoulakis, Kostas Eleftheratos

“…In addition, since PV modules’ spectral absorptivity differs according to the semiconductor material used, the impact of the above-mentioned spectral features on PV performance has been investigated in order to estimate the spectral impact between the theoretical and outdoor conditions on the yield of different PV technologies. …”
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A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering by Mohsin Khan, Ghazi Aman Nowsherwan, Aqeel Ahmed Shah, Saira Riaz, Muhammad Riaz, Ali Dad Chandio, Abdul Karim Shah, Iftikhar Ahmed Channa, Syed Sajjad Hussain, Rashid Ali, Shahzad Naseem, Muhammad Ali Shar, Abdulaziz Alhazaa

“…Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. …”
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The Influence of Calcination Temperature on Photocatalytic Activity of TiO₂-Acetylacetone Charge Transfer Complex towards Degradation of NO_x under Visible Lig... by Lucas A. Almeida, Margarita Habran, Rafael dos Santos Carvalho, Marcelo E. H. Maia da Costa, Marco Cremona, Bruno C. Silva, Klaus Krambrock, Omar Ginoble Pandoli, Edisson Morgado Jr., Bojan A. Marinkovic

“…Formation of TiO₂-acetylacetone charge transfer complex (CTC) by sol-gel route results in a hybrid semiconductor material with photodegradation activity against toxic NO_x gas. …”
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Effect of Calcination Temperature on the Physicochemical Properties and Electrochemical Performance of FeVO₄ as an Anode for Lithium-Ion Batteries by Faizan Ghani, Kunsik An, Dongjin Lee

“…Iron (III) vanadate (FeVO₄), a semiconductor material that follows insertion/extraction chemistry with a redox reaction and provides high theoretical capacity, is an auspicious choice of anode material for LIBs. …”
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Preparation and Performance Study of Photoconductive Detector Based on Bi₂O₂Se Film by Jun Liu, Zhonghui Han, Jianning Ding, Kang Guo, Xiaobin Yang, Peng Hu, Yang Jiao, Feng Teng

“…Bi₂O₂Se, as a novel two-dimensional semiconductor material, has been prepared and used in the field of photodetection. …”
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Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices by Michał Stępniak, Mateusz Wośko, Joanna Prażmowska-Czajka, Andrzej Stafiniak, Dariusz Przybylski, Regina Paszkiewicz

“…Such structures are typically used in order to fabricate high-electron-mobility transistors (HEMT). The semiconductor material was deposited through 200 μm long stripe-shaped open windows in a SiO₂ mask on GaN/sapphire templates. …”
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Scalable Fabrication of Nanogratings on GaP for Efficient Diffraction of Near-Infrared Pulses and Enhanced Terahertz Generation by Optical Rectification by Mohammad Bashirpour, Wei Cui, Angela Gamouras, Jean-Michel Ménard

“…We present a process flow for wafer-scale fabrication of a surface phase grating with sub-micron feature sizes from a single semiconductor material. We demonstrate this technique using a 110-oriented GaP semiconductor wafer with second-order nonlinearity to obtain a nanostructured device (800 nm lateral feature size and a 245 nm height modulation) with applications relevant to near-infrared optical diffraction and time-resolved terahertz (THz) technologies. …”
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Bed for bedridden patient / Nurhafiz Firdaus Razali, Mohd Faiz Izuddin Azaha and Muhamad Zahrul Affendy Rasid by Razali, Nurhafiz firdaus, Azaha, Mohd faiz izuddin, Rasid, Muhamad Zahrul Affendy

“…It is composed of semiconductor material with at least three terminals for connection to an external circuit. …”
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Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods by Al-Zahrani, Asla Abdullah, Zainal, Zulkarnain, Talib, Zainal Abidin, Lim, Hong Ngee, Holi, Araa Mebdir, Baharudin, Noor Nazihah

“…This work is highly anticipated to give contribution on further utilisation of Bi2S3/Ag2S/ZnO NRAs as a promising semiconductor material in PEC related applications.…”
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Exact Relationship between Black Phosphorus Thickness and Behaviors of Field-Effect Transistors by Liefeng Feng, Kaijin Liu, Miaoyu Wang

“…As a two-dimensional (2D) semiconductor material with excellent optoelectronic properties, black phosphorus (BP) has attracted widespread attention. …”
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Recent developments in ZnO-based heterostructures as photoelectrocatalysts for wastewater treatment: A review by Rekha B. Rajput, Rahilah Shaikh, Jitendra Sawant, Rohidas B. Kale

“…Many researchers were interested in employing ZnO semiconductor material as a photocatalyst due to its environmentally friendly nature, biocompatible, availability and durability qualities for eliminating harmful pollutants. …”
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Thick Hydride Vapor Phase Heteroepitaxy: A Novel Approach to Growth of Nonlinear Optical Materials by Vladimir L. Tassev, Shivashankar R. Vangala

“…The combination of different materials by nature&#8212;organics with inorganics&#8212;in a hybrid quasi-phase matching (QPM) structure is another topic we briefly discuss, along with some innovative techniques for the fabrication of orientation-patterned (OP) templates, including such that are based on the most universal semiconductor material&#8212;Si. Still, the focus in this work is on a series of NLO materials&#8212;GaAs, GaP, ZnSe, GaSe, ZnTe, GaN&#8230; and some of their ternaries grown with high surface and crystalline quality on non-native substrates and on non-native OP templates using hydride vapor phase epitaxy (HVPE). …”
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Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser by Lukang Wang, You Zhao, Yu Yang, Manman Zhang, Yulong Zhao

“…Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. …”
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