Investigation of interfacial engineering and charge dynamics in (Sb2S3)-based solar cells by Ee, Ling Gui

“…Henceforth, efforts were invested to replace dye and liquid electrolyte materials. A promising semiconductor material antimony sulphide (Sb2S3) owing to its high absorption coefficient (a= 1.8 x 105 cm-1) and relatively low band gap (1.7- 1.9 eV) is used to fabricate ssDSCs. …”
Get full text

The properties of nitrogen in silicon by Alpass, C, Charles Alpass

Fabrication of nanorod TiO2/CU2O heterostructure thin film by Fahrizal, Fadilah Norazni

“…The effect of deposition time was also investigated during electrodeposition to improve the properties of the p-n junction semiconductor material. P-Cu2O thin film were fabricated by using copper acetate based solution through potentiostatic with pH value of 12.5. …”
Get full text
Get full text
Get full text

Corrections of band gaps and optical spectra of N-doped Sb2Se3 from G0W0 and BSE calculations by Lawal, Abdullahi, Taura, L. S., Abdullahi, Yusuf Zuntu, Shaari, A., Suleiman, Abdussalam Balarabe, Gidado, A. S., Chiromawa, Idris Muhammad

“…Nitrogen (N) doped Sb2Se3 semiconductor material shows potential as promising candidate for solar cell application. …”

Technology CAD (TCAD) Simulations of Mg₂Si/Si Heterojunction Photodetector Based on the Thickness Effect by Hong Yu, Shentong Ji, Xiangyan Luo, Quan Xie

“…Mg₂Si is a green, healthy, and sustainable semiconductor material that has the potential to replace these toxic and damaging photoelectric materials, making photoelectric detectors (PDs) green, healthy, and sustainable. …”
Get full text

Novel III-V Nitride Polymorphs in the <i>P</i>4₂/<i>mnm</i> and <i>Pbca</i> Phases by Qingyang Fan, Xin Ai, Junni Zhou, Xinhai Yu, Wei Zhang, Sining Yun

“…In addition, in the <i>Pbca</i> phases, XN can be considered a semiconductor material, while in the <i>P</i>4₂/<i>mnm</i> phase, GaN and InN have direct band-gap, and BN and AlN are indirect wide band gap materials. …”
Get full text

Photocatalytic Degradation of Methylene Blue Dye from Wastewater by Using Doped Zinc Oxide Nanoparticles by Shreya Modi, Virendra Kumar Yadav, Abdelfattah Amari, Abeer Yousef Alyami, Amel Gacem, Hamed N. Harharah, Madhusudan Hiraman Fulekar

“…ZnO is a semiconductor material that has important physical and chemical properties, which are frequently and significantly enhanced by the addition of impurities, such as doping. …”
Get full text

Correlated exciton dynamics in semiconductor nanostructures by Wen, Patrick, Ph. D. Massachusetts Institute of Technology

Get full text

Semiconductor core fibres : materials science in a bottle by Gibson, Ursula J., Wei, Lei, Ballato, John

Get full text

Fabrication of Cu2O based homostructure thin film using electrodeposition method by Mohamad Arifin, Nurliyana

“…It was reported that Cu2O that acts as the p-n junction semiconductor material was preferable in extensive studies for solar cell application. …”
Get full text
Get full text
Get full text

Fabrication of cu2o based homostructure thin films using electrodeposition method by Mohamad Arifi, Nurliyana

“…It was reported that Cu2O that acts as the p-n junction semiconductor material was preferable in extensive studies for solar cell application. …”
Get full text
Get full text
Get full text

Tunneling and ferroelectric based transistors for energy efficient electronics by Zubair, Ahmad,Ph.D.Massachusetts Institute of Technology.

Get full text

Studies of the chemistry of plasmas used for semiconductor etching by Toogood, M, M. J. Toogood

“…<p>Optical diagnostic techniques have been developed and then used to investigate the chemistry of reactive species formed in CF₄ / O₂ rf parallel plate discharges, similar to those employed in semiconductor material processing.</p> <p>Oxygen atoms were detected by two photon laser induced fluorescence (LIF), and the technique was found to have a number of experimental caveats owing mainly to the high laser intensities required. …”

Magnetic Properties of Silicon with Paramagnetic Impurity Atoms by Nurulla F. Zikrillayev, Giyosiddin Kh. Mavlonov, Levent Trabzon, Sergey V. Koveshnikov, Zoir T. Kenzhaev, Timur B. Ismailov, Yoldoshali A. Abduganiev

“…When studying the magnetic properties of p-Si <B, Mn> samples at low temperatures (below T=30 K), a ferromagnetic state was found, i.e. succeeded in obtaining a magnetic semiconductor material by the method of diffusion of a paramagnetic impurity. …”
Get full text

Improved Properties of Post-Deposition Annealed Ga₂O₃/SiC and Ga₂O₃/Al₂O₃/SiC Back-Gate Transistors Fabricated by... by Hee-Jae Lee, Geon-Hee Lee, Seung-Hwan Chung, Dong-Wook Byun, Michael A. Schweitz, Dae Hwan Chun, Nack Yong Joo, Minwho Lim, Tobias Erlbacher, Sang-Mo Koo

“…The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga₂O₃ demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivity of Ga₂O₃ is lower than that of other wide-bandgap materials, resulting in the degradation of the electrical performance and reduced reliability of devices. …”
Get full text

Growth and Characterisation of Layered (BA)₂CsAgBiBr₇ Double Perovskite Single Crystals for Application in Radiation Sensing by Valeria Murgulov, Catherine Schweinle, Michael Daub, Harald Hillebrecht, Michael Fiederle, Václav Dědič, Jan Franc

“…A recent publication on single crystals of two-dimensional, layered organic–inorganic (BA)₂CsAgBiBr₇ double perovskite (BA⁺ = <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>C</mi><msub><mi>H</mi><mn>3</mn></msub><msub><mrow><mfenced><mrow><mi>C</mi><msub><mi>H</mi><mn>2</mn></msub></mrow></mfenced></mrow><mn>3</mn></msub><mi>N</mi><msubsup><mi>H</mi><mn>3</mn><mo>+</mo></msubsup></mrow></semantics></math></inline-formula>) suggested the great potential of this semiconductor material in the detection of X-ray radiation. …”
Get full text

Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide by Mohammad Beygi, John T. Bentley, Christopher L. Frewin, Cary A. Kuliasha, Arash Takshi, Evans K. Bernardin, Francesco La Via, Stephen E. Saddow

“…Single crystalline cubic silicon carbide (3C-SiC) is a semiconductor material that has been long recognized for its mechanical robustness and chemical inertness. …”
Get full text

COVID-19 and Substance Use Disorder: Study Protocol for the International Society of Addiction Medicine Practice and Policy Interest Group Global Survey by Alexander Baldacchino, Seyed Ramin Radfar, Cornelis De Jong, Parnian Rafei, Masud Yunesian, Gilberto Gerra, Kathleen Brady, Mohsen Ebrahimi, Mehrnoosh Vahidi, Arash Khojasteh Zonoozi, Hossein Mohaddes Ardabili, Anja Busse, Elizabeth Saenz, Giovanna Campello, Kamran Niaz, Hamed Ekhtiari, Ali Farhoudian

Get full text

Cost Effective Solvothermal Method to Synthesize Zn-Doped TiO₂ Nanomaterials for Photovoltaic and Photocatalytic Degradation Applications by Tharmakularasa Rajaramanan, Sivagowri Shanmugaratnam, Vijayakumar Gurunanthanan, Shivatharsiny Yohi, Dhayalan Velauthapillai, Punniamoorthy Ravirajan, Meena Senthilnanthanan

“…Titanium dioxide (TiO₂) is a commonly used wide bandgap semiconductor material for energy and environmental applications. …”
Get full text

Development of very high frequency plasma enhanced chemical vapour deposition for nanostructure silicon carbide thin film deposition by Omar, Muhammad Firdaus

“…Silicon carbide (SiC) is a semiconductor material which has received a great deal of attention due to its outstanding mechanical properties, chemical inertness, thermal stability, superior oxidation resistance, high hardness, wide band gap and relatively low weight for applications in high frequency and high power systems in extreme environment. …”
Get full text