Ultra Low Power High Speed Domino Logic Circuit by Using FinFET Technology by Ajay Kumar Dadoria, Kavita Khare, Tarun Kumar Gupta, R. P. Singh

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Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect by Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri, Morteza Fathipour, Adrian M. Ionescu

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Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂ by Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu

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Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I_ON/I_OFF Ratio by Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li Luo, Yung-Chun Wu

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Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT by Yijun Shi, Wanjun Chen, Zhiwei Fu, Si Chen, Bo Zhang

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Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study by Mohammad Karbalaei, Daryoosh Dideban, Hadi Heidari

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Steep Slope Field Effect Transistors Based on 2D Materials by Laixiang Qin, He Tian, Chunlai Li, Ziang Xie, Yiqun Wei, Yi Li, Jin He, Yutao Yue, Tian‐Ling Ren

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Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology by Changwoo Noh, Changwoo Han, Sang Min Won, Changhwan Shin

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Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors by Takashi Nagase, Takeshi Hirose, Takashi Kobayashi, Rieko Ueda, Akira Otomo, Hiroyoshi Naito

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Multi-Channel Step FinFET With Spacer Engineering by Rinku Rani Das, Alex James

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Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer by Yiming Li, Min-Hui Chuang, Yu-Chin Tsai

Subjects: “…Short channel effect…”
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Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications by Koosha Karimi, Ali Fardoost, Mehdi Javanmard

Subjects: “…short channel effect (SCE)…”
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Mitigating DIBL and Short-Channel Effects for III-V FinFETs With Negative-Capacitance Effects by Shih-En Huang, Wei-Xiang You, Pin Su

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Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review by Laixiang Qin, Chunlai Li, Yiqun Wei, Guoqing Hu, Jingbiao Chen, Yi Li, Caixia Du, Zhangwei Xu, Xiumei Wang, Jin He

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Perspective of Buried Oxide Thickness Variation on Triple Metal-Gate (TMG) Recessed-S/D FD-SOI MOSFET by Anjali Priya, Nilesh Anand Srivastava, Ram Awadh Mishra

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Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM by Minjae Sun, Hyoung Won Baac, Changhwan Shin

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A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics by Mohammad Karbalaei, Daryoosh Dideban, Hadi Heidari

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Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations by Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi

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Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping by Deepika Gupta, Abhishek Kumar Upadhyay, Ankur Beohar, Santosh Kumar Vishvakarma

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On short channel effects in high voltage JFETs: A theoretical analysis by F. Monaghan, A. Martinez, J. Evans, C. Fisher, M. Jennings

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