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    Nb-Ta-Sn Oxides from Lithium-Beryllium-Tantalum Pegmatite Deposits of the Kolmozero–Voronja Belt, NW Russia: Implications for Tracing Ore-Forming Processes and Mineralization Signatures by Dmitry Zozulya, Lyudmila N. Morozova, Kåre Kullerud, Ayya Bazai

    Published 2023-12-01
    “…In this paper we present textural and compositional data for columbite group minerals (CGMs) and associated Nb-Ta-Sn oxides from lithium-beryllium-tantalum pegmatite deposits of the Kolmozero–Voronja belt, NW Russia, with the aim of deciphering these characteristics for minerals from deposits with different mineral signatures and lithium ore grade. …”
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  16. 376

    Cell volume increase in murine MC3T3-E1 pre-osteoblasts attaching onto biocompatible tantalum observed by magnetic AC mode atomic force microscopy. by Andersen, L, Contera, SA, Justesen, J, Duch, M, Hansen, O, Chevallier, J, Foss, M, Pedersen, F, Besenbacher, F

    Published 2005
    “…An increase of approximately 50% in cell volume was observed when the cells attached to planar tantalum substrates and developed a flattened structure including lamellipodia. …”
    Journal article
  17. 377

    Evaluation of Photoelectrocatalysis with Electrode Based on Ti/RuO<sub>2</sub>-TiO<sub>2</sub> Modified with Tin and Tantalum Oxides for the Degradation of Indigo Blue Dye by Alveriana Tagarro Tomaz, Carla Regina Costa, Maria de Lourdes S. Vasconcellos, Rolando Pedicini, Josimar Ribeiro

    Published 2022-12-01
    “…In the present work, we sought to investigate the efficiency of a Ti/RuO<sub>2</sub>-TiO<sub>2</sub> DSA modified with tin and tantalum for the degradation of Indigo Blue dye by photoelectrocatalysis. …”
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    Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba0.5 Sr0.5TiO3Thin Film by Irzaman, H. Darmasetiawan, H. Hardhienata

    Published 2009-01-01
    “…Thin films 10 % gallium oxide doped barium strontium titanate (BGST) and 10 % tantalum oxide doped barium strontium titanate (BTST) were prepared on p-type Si (100) substrates using chemical solution deposition (CSD) method with 1.00 M precursor. …”
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