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  1. 381

    Automated Placement Of A Transistor Pair For Analogue by Balakrishnan, Saravanan

    Published 2012
    “…The purpose of this research is to introduce a complete methodology for transistor pair placement for analogue layout using a concept of cells and arrays based on migration and reuse. …”
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    Thesis
  2. 382

    Simulation, fabrication and characterization of PMOS transistor device by Yusuf, Siti Idzura

    Published 2006
    “…From the parameter value obtained, 0.3 m m and 0.5 mm PMOS transistor had been successfully produced. Fabrication simulation was performed to produce a 0.1 |am and 0.3p.m PMOS transistor by using the ISE-TCAD software. …”
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    Thesis
  3. 383

    Simulation, fabrication and characterization of PMOS transistor device by Yusuf, Siti Idzura

    Published 2006
    “…From the paramete r value obtained, 0.3 m m an d 0.5 m m PMO S transistor ha d bee n successfully produced . Fabrication simulation wa s performe d to produc e a 0.1 |am an d 0.3p.m PMO S transistor by using the ISE-TCA D software . …”
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    Thesis
  4. 384
  5. 385

    Modeling of graphene nanoribbon field effect transistor by Rahmani, Meisam

    Published 2013
    “…The scaling of Field Effect Transistor (FET) at nanoscale assures better performance of the device. …”
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    Thesis
  6. 386

    Characterization of nanosheet transistor logic and its performance by Lee, Ching Yee

    Published 2022
    “…Fin-shaped Field-Effect Transistors (FinFETs), the current transistor technology, is not up to the challenge when we descend below the 7 nm scale. …”
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    Thesis
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  9. 389

    FET modeling for circuit simulation/ by 246673 Divekar, Dileep

    Published 1988
    Subjects: “…Field-effect transistors…”
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  16. 396

    Planar double-gate transistor : from technology to circuit / by Amara, A., Rozeau, O.

    Published 2009
    Subjects: “…Planar transistors…”
  17. 397
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  19. 399

    Organic field effect transistors : theory, fabrication and characterization / by 272339 Kymissis, Ioannis

    Published 2009
    Subjects: “…Organic field-effect transistors…”
  20. 400