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521
High-κ/metal gate for advanced transistor applications
Published 2015“…GaN has attracted much attention in replacing silicon in high-power transistors. However, an unavoidable formation of GaOx is the source of charged states which degrade the performance of transistors. …”
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Thesis -
522
Studies of gallium nitride high electron mobility transistors
Published 2016“…With its unique highly polarization induced 2-Dimensional electron gas (2DEG), GaN-based High Electron Mobility Transistors (HEMTs) have been a focus in recent studies, aimed at improving and developing better fabrication techniques of devices for different appliances requiring highly linear power amplification or high temperature operations. …”
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Final Year Project (FYP) -
523
Physics-based compact modeling of quasi-ballistic transistors
Published 2017“…This Ph.D. study deals with the development of physics-based compact models for advanced semiconductor devices with a focus on quasi-ballistic (QB) transistors. The initial part of the thesis deals with Fermi potential modeling of III-V (InGaAs)-based High Electron Mobility Transistors with rectangular quantum well. …”
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Thesis -
524
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525
High current gain silicon-based spin transistor
Published 2003“…A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). …”
Journal article -
526
Light induced recovery of polymer field effect transistors
Published 2006“…We have used differential terahertz spectroscopy to monitor performance degradation in state-of-the-art polymer field effect transistors (pFETs) based on poly[(9,9-dioetylfluorene-2,7-diyl)-co-(bithiophene)] (F8T2). …”
Conference item -
527
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528
Quantum interference enhances the performance of single-molecule transistors
Published 2024“…Here we demonstrate these effects experimentally, showing how the performance of molecular transistors is improved when the resistive channel contains two destructively interfering waves. …”
Journal article -
529
Study of the side gate junctionless transistor in accumulation region
Published 2016Get full text
Article -
530
Fluoropolymer as dielectric in organic field effect transistor (OFET)
Published 2019“…Fluoropolymer is a type of dielectric material that have been used in fabricating Organic Thin Film Transistor (OTFT). Dielectric layer is one of the layers that make OTFT. …”
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Conference or Workshop Item -
531
Characterisation of ballistic carbon nanotube field-effect transistor
Published 2005“…Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the perfonnance of silicon transistor with reduction of its size. …”
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Thesis -
532
Characterisation of ballistic carbon nanotube field-effect transistor
Published 2005“…Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the perfonnance of silicon transistor with reduction of its size. …”
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Thesis -
533
Physics-based modelling of ballistic transport in nanoscale transistor
Published 2009“…The ballistic transport of the carriers is predicted when the channel length of the transistor is less than the scattering-limited mean-free path. …”
Book Section -
534
Current–voltage characteristics of a silicon nanowire transistor
Published 2009“…The results obtained are applied to the modeling of the current-voltage characteristics of a nanowire transistor. …”
Article -
535
Electrostatic potential and trajectory of an electron in single electron transistor
Published 2012“…Tunneling of an electron from the electrode towards the island in single electron transistor (SET) is a quantum mechanical phenomenon. …”
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Thesis -
536
Performance characterization of Heterojunction Bipolar Transistor as an optoelectronic mixer
Published 2012“…This paper explains the development of physical model Heterojunction Bipolar Transistor (HBT) andcharacterizes its performance as an optoelectronic mixer (OEM). …”
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Article -
537
Characterisation of ballistic carbon nanotube field-effect transistor
Published 2005“…Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the performance of silicon transistor with reduction of its size. …”
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Thesis -
538
Development of solution-gated graphene transistor model for biosensors
Published 2014“…In particular, graphene-based transistors have been developed rapidly and are considered as an option for DNA sensing applications. …”
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Article -
539
Graphene nanoribbon field-effect transistor at high bias
Published 2014“…Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. …”
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Article -
540
Performance prediction of graphene nanoscroll and carbon nanotube transistors
Published 2016Conference or Workshop Item