High-κ/metal gate for advanced transistor applications by Duan, Tianli

“…GaN has attracted much attention in replacing silicon in high-power transistors. However, an unavoidable formation of GaOx is the source of charged states which degrade the performance of transistors. …”
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Studies of gallium nitride high electron mobility transistors by Goh, Basil Yan Kun

“…With its unique highly polarization induced 2-Dimensional electron gas (2DEG), GaN-based High Electron Mobility Transistors (HEMTs) have been a focus in recent studies, aimed at improving and developing better fabrication techniques of devices for different appliances requiring highly linear power amplification or high temperature operations. …”
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Physics-based compact modeling of quasi-ballistic transistors by Ajaykumar, Arjun

“…This Ph.D. study deals with the development of physics-based compact models for advanced semiconductor devices with a focus on quasi-ballistic (QB) transistors. The initial part of the thesis deals with Fermi potential modeling of III-V (InGaAs)-based High Electron Mobility Transistors with rectangular quantum well. …”
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Magneto-optics of organic crystalline field effect transistors by Ardavan, A, Blundell, S, Singleton, J

High current gain silicon-based spin transistor by Dennis, C, Sirisathitkul, C, Ensell, G, Gregg, J, Thompson, S

“…A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). …”

Light induced recovery of polymer field effect transistors by Lloyd-Hughes, J, Richards, T, Castro-Camus, E, Sirringhaus, H, Johnston, M, Herz, L

“…We have used differential terahertz spectroscopy to monitor performance degradation in state-of-the-art polymer field effect transistors (pFETs) based on poly[(9,9-dioetylfluorene-2,7-diyl)-co-(bithiophene)] (F8T2). …”

Anchor groups for graphene-porphyrin single-molecule transistors by Limburg, B, Thomas, J, Holloway, G, Sadeghi, H, Sangtarash, S, Hou, I, Cremers, J, Narita, A, Müllen, K, Lambert, C, Briggs, G, Mol, J, Anderson, H

Quantum interference enhances the performance of single-molecule transistors by Chen, Z, Grace, IM, Woltering, SL, Chen, L, Gee, A, Baugh, J, Briggs, GAD, Bogani, L, Mol, JA, Lambert, CJ, Anderson, HL, Thomas, JO

“…Here we demonstrate these effects experimentally, showing how the performance of molecular transistors is improved when the resistive channel contains two destructively interfering waves. …”

Study of the side gate junctionless transistor in accumulation region by Dehzangi, Arash, Larki, Farhad, Md Ali, Sawal Hamid, Hutagalung, Sabar Derita, Islam, Md Shabiul, Hamidon, Mohd Nizar, Menon, Susthitha, Jalar @ Jalil, Azman, Hassan, Jumiah, Yeop Majlis, Burhanuddin

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Fluoropolymer as dielectric in organic field effect transistor (OFET) by Nor Halim, Nur Amiera, Mohtar, Mohd Nazim, Ramli, Muhammad Mahyiddin, Mohd Sidek, Roslina, Abd Wahab, Nur Zuraihan

“…Fluoropolymer is a type of dielectric material that have been used in fabricating Organic Thin Film Transistor (OTFT). Dielectric layer is one of the layers that make OTFT. …”
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Characterisation of ballistic carbon nanotube field-effect transistor by Sanudin, Rahmat

“…Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the perfonnance of silicon transistor with reduction of its size. …”
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Characterisation of ballistic carbon nanotube field-effect transistor by Sanudin, Rahmat

“…Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the perfonnance of silicon transistor with reduction of its size. …”
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Physics-based modelling of ballistic transport in nanoscale transistor by Saad, Ismail, Lee, Razak M. A., Ismail, Razali, Arora, Vijay K.

“…The ballistic transport of the carriers is predicted when the channel length of the transistor is less than the scattering-limited mean-free path. …”

Current–voltage characteristics of a silicon nanowire transistor by Taghi Ahmadi, Mohammad, Houg Lau, Hui, Ismail, Razali, Arora, Vijay K.

“…The results obtained are applied to the modeling of the current-voltage characteristics of a nanowire transistor. …”

Electrostatic potential and trajectory of an electron in single electron transistor by Ithnin, Hanafi

“…Tunneling of an electron from the electrode towards the island in single electron transistor (SET) is a quantum mechanical phenomenon. …”
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Performance characterization of Heterojunction Bipolar Transistor as an optoelectronic mixer by Shaharuddin, Nur Amirah, Idrus, Sevia Mahdaliza, Mohamed, Norliza, Abu Bakar, Abu Bakar, Isaak, Suhaila

“…This paper explains the development of physical model Heterojunction Bipolar Transistor (HBT) andcharacterizes its performance as an optoelectronic mixer (OEM). …”
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Characterisation of ballistic carbon nanotube field-effect transistor by Sanudin, Rahmat

“…Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the performance of silicon transistor with reduction of its size. …”
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Development of solution-gated graphene transistor model for biosensors by Karimi, Hediyeh, Yusof, Rubiyah, Rahmani, Rasoul, Hosseinpour, Hoda, Ahmadi, Mohammad Taghi

“…In particular, graphene-based transistors have been developed rapidly and are considered as an option for DNA sensing applications. …”
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Graphene nanoribbon field-effect transistor at high bias by Ghadiry, Mahdiar Hossein, Ismail, Razali, Saeidmanesh, Mehdi, Khaledian, Mohsen, Abd. Manaf, Asrulnizam

“…Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. …”
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Performance prediction of graphene nanoscroll and carbon nanotube transistors by Hamzah, A., Ismail, R.