СПОСОБИ ПІДВИЩЕННЯ ККД І ПОКРАЩЕННЯ ОСНОВНИХ ХАРАКТЕРИСТИК DC/DC ПЕРЕТВОРЮВАЧІВ ІЗ ПОЗДОВЖНІМ КЛЮЧЕМ... by І.В. Волков, В.В. Голубєв, В.І. Зозульов

“…The results of the study of three new variants of DC/DC-pulse converters (DСС) with a longitudinal transistor switch are presented. It is established that the creation of conditions in which there is no sharp break of the DCС input current, leads to a smooth change in voltage on its switch and to minimize the range of variation of this voltage, which is accompanied by reduced power losses on the switch and improved power quality at the DCС input and output. …”
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Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers by Ki Yeong Kim, Joo Seok Noh, Tae Young Yoon, Jang Hyun Kim

“…In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. …”
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A Fault Detection Method of IGBT Bond Wire Fatigue Based on the Reduction of Measured Heatsink Thermal Resistance by Dan Luo, Minyou Chen, Wei Lai, Hongjian Xia, Zhenyu Deng, Zhi Wang, Kai Yu

“…Bond wire lift-off is one of the major failure mechanisms in the insulated gate bipolar transistor (IGBT) modules. Detecting the fault of bond wires is important to avoid the open-circuit fault of IGBT to ensure the reliable operation of power converters. …”
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A dual doping nonvolatile reconfigurable FET by Xiaoshi Jin, Shouqiang Zhang, Xi Liu

“…Abstract In this work, we propose a dual doping based nonvolatile reconfigurable field effect transistor with source/drain (S/D) charge storage layers (DDN R-FET). …”
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Silicon Nanowires for Gas Sensing: A Review by Mehdi Akbari-Saatlu, Marcin Procek, Claes Mattsson, Göran Thungström, Hans-Erik Nilsson, Wenjuan Xiong, Buqing Xu, You Li, Henry H. Radamson

“…Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. …”
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A Hydrodynamic Model for Silicon Nanowires Based on the Maximum Entropy Principle by Orazio Muscato, Tina Castiglione

“…Numerical results are shown for a SiNW transistor.…”
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Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique by Hagyoul Bae, Choong-Ki Kim, Yang-Kyu Choi

“…A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: gint(E)) inside an energy bandgap range (EV < E < EC) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfoliated molybdenum disulfide (MoS2) field effect transistor (EM-FET). The proposed technique uses the measured frequency-dispersive capacitance (Cm) and conductance (Gm=1/Rm=ωCmDm) data with the measured dissipation factor Dm(=Gm/ωCm) at a frequency range of 0.3 kHz to 10 kHz. …”
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A Schottky diode and FET‐paralleled analogue predistorter for 5G small‐cell base stations by Li Huang, Gaoming Xu, Jifu Huang, Taijun Liu

“…Abstract This letter presents an analogue predistorter (APD) named Schottky diode (SD) and field effect transistor (FET)‐paralleled APD (SDFP‐APD) for the fifth‐generation (5G) mobile system, which is composed of an FET paralleled with two SDs. …”
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Multi-dimensional models of sic power mosfet for accurately predicting the characteristics by Shen Diao, Hong Chen, Yanhu Chen, Yun Bai, Chengyue Yang, Xinyu Liu, Chengzhan Li, Zhengdong Zhou

“…The paper presents a compact simulation program with integrated circuit emphasis (SPICE) model for a 1200V/19A Silicon Carbide power metallic oxide semiconductor field effect transistor (MOSFET). Based on an equivalent circuit topology, the model completely describes the static and dynamic device characteristics which include the MOSFET channel current, the nonlinear junction capacitance and the switching behavior. …”
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Electron counting in a silicon single-electron pump by Tuomo Tanttu, Alessandro Rossi, Kuan Yen Tan, Kukka-Emilia Huhtinen, Kok Wai Chan, Mikko Möttönen, Andrew S Dzurak

“…Single-shot detection of electrons pumped into a reservoir dot is performed using a capacitively coupled single-electron transistor. We extract the full probability distribution of the transfer of n electrons per pumping cycle for $n=0,1,2,3,\mathrm{and}\;4.$ We find that the probabilities extracted from the counting experiment are in agreement with direct current measurements in a broad range of dc electrochemical potentials of the pump. …”
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Nonlinear Dynamics and Performance Analysis of a Buck Converter with Hysteresis Control by Carlos I. Hoyos Velasco, Fredy Edimer Hoyos Velasco, John E. Candelo-Becerra

“…There exists a tradeoff between voltage output ripple and transistor switching frequency. An experimental prototype for the Buck power converter is built, and theoretical results are verified experimentally. …”
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Giant magneto-photoelectric effect in suspended graphene by Jens Sonntag, Annika Kurzmann, Martin Geller, Friedemann Queisser, Axel Lorke, Ralf Schützhold

“…We study the optical response of a suspended, monolayer graphene field-effect transistor structure in magnetic fields of up to 9 T (quantum Hall regime). …”
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Design and simulation of Penternary adder based on GNRFET by Mahdieh Nayeri, Maryam Nayeri

“…The HSPICE-compatible model and 15-nanometer technology have been used to simulate the graphene nanoribbon transistor. Accordingly, the proposed NAND and NOR penternary circuits are first, designed and simulated. …”
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Design of 12-bit 6 GS/s high speed DAC with>63 dB SFDR in InP HBT by Wang Ming, Zhang Youtao, Ye Qingguo, Luo Ning, Li Xiaopeng

“…The paper presents a 12 bit 6 GS/s current-steering digital-to-analog converter(DAC) based on a 0.7 μm ft=280 GHz InP heterojunction bipolar transistor(HBT) technology. Current switch uses the new architecture to enlarge output impedance and make it stability. …”
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Classification and Design Space Exploration of Low-Power Three-Stage Operational Transconductance Amplifier Architectures for Wide Load Ranges by Joseph Riad, Johan J. Estrada-López, Edgar Sánchez-Sinencio

“…Theoretical discussions are further reinforced by transistor-level simulation results.…”
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High-speed polysilicon CMOS photodetector for telecom and datacom by Atabaki, Amir H, Meng, Huaiyu, Alloatti, Luca, Mehta, Karan Kartik, Ram, Rajeev J

“…Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow (“zero-change” CMOS). …”
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Acoustic Bragg Reflectors for Q-Enhancement of Unreleased MEMS Resonators by Wang, Wentao, Weinstein, Dana

“…Development of unreleased RF MEMS resonators at the transistor level of the CMOS stack will enable direct integration into front-end-of-line (FEOL) processing, making these devices an attractive choice for on-chip signal generation and signal processing. …”
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Detecting topological currents in graphene superlattices by Gorbachev, R. V., Yu, G. L., Kretinin, A. V., Withers, F., Cao, Y., Mishchenko, A., Grigorieva, I. V., Novoselov, Kostya S., Geim, A. K., Song, Justin Chien Wen, Levitov, Leonid

“…The long-range character of topological currents and their transistor-like control by gate voltage can be exploited for information processing based on the valley degrees of freedom.…”
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Spin-based ionic materials and devices for neuromorphic computing by Tan, Sze Han

“…Here, I emulate the synapse with a three-terminal cobalt transistor and ionic liquid gating. The usage of ionic liquid exploiting the high mobility of ions and the formation of electric double layers at interfaces produce high capacitance. …”
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2D material based high performance photodetectors by Chan, Tuck Yern

“…The main objective of the project is to fabricate a Graphene based field effect transistor (GrFET) and conduct analysis on photodetection measurements. …”
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