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7081
Design of Binary and Ternary Logic Inverters Based on Silicon Feedback FETs Using TCAD Simulator
Published 2023-01-01“…A feedback field effect transistor (FBFET) with p-n-p-n structure benefits from a positive feedback mechanism. …”
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Article -
7082
Design and implementation of a 10 W broadband power amplifier at the broadcast systems
Published 2023-01-01“… This paper deals with the design of a 10W amplifier using a DMOSFET type push-pull transistor, where the circuit was designed by applying the optimization technique in finding the appropriate input and output impedance to obtain a 40 dBm output power and a good efficiency (33.9%) suitable for working in the broadcast systems, in addition to the appropriate design of the matching circuit using a transformer BALUN with ferrite, which provided wide performance up to several octaves from 100 MHz to 700 MHz and gain (12.5dB) within ±0.5dB, and VSWR<1.8. the design was simulated by(NIAWR) software, then the circuit was implemented and practical measurements were made. …”
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Article -
7083
Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs
Published 2021-01-01“…The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).…”
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Article -
7084
A Case for Fine-Grain Adaptive Cache Coherence
Published 2012“…As transistor density continues to grow geometrically, processor manufacturers are already able to place a hundred cores on a chip (e.g., Tilera TILE-Gx 100), with massive multicore chips on the horizon. …”
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7085
Development of electrical, electronic & information system
Published 2008“…Thereafter, engineers have ventured into some non-classical transistor structures will likely take over due to their delivery of higher performance with lower leakage than traditional scaled SOI CMOS approaches. …”
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Research Report -
7086
Design of CMOS low noise amplifiers
Published 2008“…The lack of high quality passive components and the inadequate modeling of the noise sources of the transistor further complicate the design.…”
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Thesis -
7087
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7088
A high speed, high linearity voltage-to-time converter
Published 2014“…All the designed ATC circuits are described in transistor level schematic and their performances are simulated with Cadence. …”
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Final Year Project (FYP) -
7089
Using EM simulation to analyse the radiated emissions profile of an automotive TFT display module
Published 2016“…One notable change is the use of thin film transistor (TFT) displays in the HMI panels. The trend is due to increased demand for more advanced graphical capabilities and lesser interest for electro-mechanical indicators. …”
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Final Year Project (FYP) -
7090
Pembuatan alat ukur konsentrasi larutan
Published 1997“…Sensor yang digunakan adalah sensor yang bekerja atas dasar fotoelektrik, terdiri atas LED inframerah (tipe biru) danfoto transistor (tipe BPY62D). Untuk ADC digunakan ICADC0804 dan untuk penyeleksi data digunakan IC 74LS241. …”
Article -
7091
Towards model-driven reconstruction in atom probe tomography
Published 2020“…Finally, we apply our model to the reconstruction of an experimental field-effect transistor (finFET) dataset. This model-driven reconstruction successfully reduces density distortions compared to conventional methods. …”
Journal article -
7092
Wide dynamic range CMOS pixels with reduced dark current
Published 2008“…The sensitivity of logarithmic pixels at low light levels is limited by the dark current that flows through the load transistor in the pixel in addition to the photocurrent. …”
Conference item -
7093
Self-Configurable Current-Mirror Technique for Parallel RGB Light-Emitting Diodes (LEDs) Strings
Published 2020“…The operating principle revolves around a dynamic and self-configurable combinational circuit of transistor and op-amp based current balancing circuit, along with their op-amp based dimming circuits. …”
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Article -
7094
Boost converter with power factor correction
Published 2012“…A simple boost converter consists of at least two switching components such as diode and transistor with combine to an energy storage element which is capacitor. …”
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Undergraduates Project Papers -
7095
Design and Parametric Analysis of Charge Plasma Junctionless TFET for Biosensor Applications
Published 2023-01-01“…This paper presents a new design of charge plasma junctionless tunnel field effect transistor (CP JLTFET) with improved ON current, surface potentials. …”
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Article -
7096
4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics
Published 2021-06-01“…In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. …”
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Article -
7097
Maxwell’s demon in the quantum-Zeno regime and beyond
Published 2018-01-01“…Considering a single-electron transistor, where we implement a Maxwell demon by a piecewise-constant feedback protocol, we investigate quantum implications of the Maxwell demon. …”
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Article -
7098
Silicon Photomultiplier Sensor Interface Based on a Discrete Second Generation Voltage Conveyor
Published 2020-04-01“…The design addressed here exploits directly at the transistor level, with commercial components, the proposed interface; the obtained performance is valuable considering both the discrete elements and the application. …”
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Article -
7099
Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case
Published 2021-01-01“…This article proposes effective methods of measurements and computations of internal temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted in the common case. …”
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Article -
7100
Switching Device Dead Time Optimization of Resonant Double-Sided LCC Wireless Charging System for Electric Vehicles
Published 2017-11-01“…Aiming at the reduction of the influence of the dead time setting on power level and efficiency of the inverter of double-sided LCC resonant wireless power transfer (WPT) system, a dead time soft switching optimization method for metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed. At first, the mathematic description of double-sided LCC resonant wireless charging system is established, and the operating mode is analyzed as well, deducing the quantitative characteristic that the secondary side compensation capacitor C2 can be adjusted to ensure that the circuit is inductive. …”
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Article