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7101
Investigation of Temperature and Channel Dimension Effects on CMOS Circuit Performance
Published 2024-03-01“…This paper presents the impact of temperature variations and alterations in transistor channel dimensions on CMOS (Complementary Metal-Oxide-Semiconductor) circuit technology. …”
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7102
Non-local coupling of two donor-bound electrons
Published 2013-01-01“…Two donors are strongly coupled to two leads in a parallel configuration within a nano-wire field effect transistor. By applying a magnetic field we observe interference between two donor-induced Kondo channels, which depends on the Aharonov–Bohm phase picked up by electrons traversing the structure. …”
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7103
4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance
Published 2020-09-01“…In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations. …”
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7104
Development and Implementation of LED Street Lights with Bright and Extinguishable Controls and Power Converters
Published 2023-07-01“…The developed QR-flyback converter was operated in discontinuous conduction mode, and the pulse-width modulation (PWM) control chip was used to switch and conduct at the resonant valley of the drain-source voltage on the metal-oxide-semiconductor field-effect transistor (MOSFET) switch to reduce the switching loss. …”
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7105
The Architecture of the on-Board Power System of a More Electric Aircraft
Published 2023-10-01“…In the above aspect, article presents selected test results of a proposed system consisting of aircraft generators with changing speeds, which power the bidirectional transistor converters operating in parallel. On the other hand, the energy, generated by generators equipped with a rectifier systems feeds a 0.4/15 kV booster transformer operating at idle. …”
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7106
Bio-Phototransistors with Immobilized Photosynthetic Proteins
Published 2020-10-01“…In this work, reaction center (RC) proteins, or a core complex consisting of the RC encircled by light harvesting (LH1) proteins (RC-LH1) from photosynthetic bacteria, were immobilized on an insulating layer of an ion-sensitive field-effect transistor (ISFET) to build bio-photodetectors. The orientation of the RC proteins was controlled via application of a hybrid linker made of 10-carboxydecylphosphonic acid and cytochrome <i>c</i> that anchored the RCs to their electron donor side. …”
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7107
PbSe/PbS Core/Shell Nanoplatelets with Enhanced Stability and Photoelectric Properties
Published 2023-11-01“…The carrier transport was investigated with the field effect transistor method, showing p-type conductivity with charge mobility of 1.26 × 10<sup>−2</sup> cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>.…”
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7108
Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Published 2023-04-01“…In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics. …”
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7109
From Waste Plastics to Carbon Nanotube Audio Cables
Published 2022-01-01“…Carbon nanotubes (CNTs) have long been at the forefront of materials research, with applications ranging from composites for increased tensile strength in construction and sports equipment to transistor switches and solar cell electrodes in energy applications. …”
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7110
Phase Transitions in Amorphous Germanium under Non-Hydrostatic Compression
Published 2022-06-01“…As the pioneer semiconductor in transistor, germanium (Ge) has been widely applied in information technology for over half a century. …”
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7111
A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric
Published 2023-12-01“…This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the gate dielectric. …”
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7112
Optical and Electronic NOx Sensors for Applications in Mechatronics
Published 2009-05-01“…In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. …”
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7113
Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode
Published 2022-05-01“…Based on the study of transient capacitance of SBD, this work could be extended to the Miller capacitance in high electron mobility transistor (HEMT) devices. Moreover, the report on the stability of capacitance is essential for GaN devices, and could be further extended to other aspects of device research.…”
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7114
Dielectric, piezoelectric, and ferroelectric nanomaterials in the biomedical applications
Published 2023-12-01“…Biomolecular detection methods have been developed, including dielectric‐gated field‐effect transistor, dielectrophoresis, non‐linear dielectric response, and optical tweezer. …”
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7115
Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules
Published 2019-10-01“…This paper presents the development of a hardware simulator based on the junction-temperature of insulated-gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs). …”
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7116
Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
Published 2019-04-01“…Abstract We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. …”
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7117
A 21.4 pW Subthreshold Voltage Reference with 0.020 %/V Line Sensitivity Using DIBL Compensation
Published 2023-02-01“…To achieve near-zero line sensitivity, a two-transistor (2-T) voltage reference is biased with a current source to cancel the drain-induced barrier-lowering (DIBL) effect of the 2-T core, thus improving the line sensitivity. …”
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7118
Modeling and Prediction of Common Mode Electromagnetic Interference in GaN-Based Switching Power Converters
Published 2023-05-01“…Behavioral models of common mode (CM) electromagnetic interference (EMI) are proposed herein for a GaN high-electron-mobility transistor (HEMT) synchronous buck converter. First, a CM noise model is developed using a linear equivalent circuit that consists of a voltage source, current source, and two noise impedances. …”
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7119
ISFET‐based sensors for (bio)chemical applications: A review
Published 2023-08-01“…Abstract Ion‐sensitive field effect transistor (ISFET) sensor is a hot topic these years, playing the combined roles of signal recognizer and converter for (bio)chemical analytes. …”
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7120
A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules
Published 2023-10-01“…Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation of IGBT modules. …”
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