Investigation of Temperature and Channel Dimension Effects on CMOS Circuit Performance by Zitouni Messai, Abdelhalim Brahimi, Okba Saidani, Nacerdine Bourouba, Abderrahim Yousfi

“…This paper presents the impact of temperature variations and alterations in transistor channel dimensions on CMOS (Complementary Metal-Oxide-Semiconductor) circuit technology. …”
Get full text

Non-local coupling of two donor-bound electrons by J Verduijn, R R Agundez, M Blaauboer, S Rogge

“…Two donors are strongly coupled to two leads in a parallel configuration within a nano-wire field effect transistor. By applying a magnetic field we observe interference between two donor-induced Kondo channels, which depends on the Aharonov–Bohm phase picked up by electrons traversing the structure. …”
Get full text

4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance by Junghun Kim, Kwangsoo Kim

“…In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations. …”
Get full text

Development and Implementation of LED Street Lights with Bright and Extinguishable Controls and Power Converters by Kai-Jun Pai, Liang-Hsun Wang, Ming-Hung Chen

“…The developed QR-flyback converter was operated in discontinuous conduction mode, and the pulse-width modulation (PWM) control chip was used to switch and conduct at the resonant valley of the drain-source voltage on the metal-oxide-semiconductor field-effect transistor (MOSFET) switch to reduce the switching loss. …”
Get full text

The Architecture of the on-Board Power System of a More Electric Aircraft by Lucjan Setlak, Rafał Kowalik

“…In the above aspect, article presents selected test results of a proposed system consisting of aircraft generators with changing speeds, which power the bidirectional transistor converters operating in parallel. On the other hand, the energy, generated by generators equipped with a rectifier systems feeds a 0.4/15 kV booster transformer operating at idle. …”
Get full text

Bio-Phototransistors with Immobilized Photosynthetic Proteins by Arash Takshi, Houman Yaghoubi, Daniel Jun, J. Thomas Beatty

“…In this work, reaction center (RC) proteins, or a core complex consisting of the RC encircled by light harvesting (LH1) proteins (RC-LH1) from photosynthetic bacteria, were immobilized on an insulating layer of an ion-sensitive field-effect transistor (ISFET) to build bio-photodetectors. The orientation of the RC proteins was controlled via application of a hybrid linker made of 10-carboxydecylphosphonic acid and cytochrome <i>c</i> that anchored the RCs to their electron donor side. …”
Get full text

PbSe/PbS Core/Shell Nanoplatelets with Enhanced Stability and Photoelectric Properties by Anton A. Babaev, Ivan D. Skurlov, Sergei A. Cherevkov, Peter S. Parfenov, Mikhail A. Baranov, Natalya K. Kuzmenko, Aleksandra V. Koroleva, Evgeniy V. Zhizhin, Anatoly V. Fedorov

“…The carrier transport was investigated with the field effect transistor method, showing p-type conductivity with charge mobility of 1.26 × 10⁻² cm²·V⁻¹·s⁻¹.…”
Get full text

Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter by Wei Wu, Yansong Li, Mingkang Yu, Chongbing Gao, Yulu Shu, Yong Chen

“…In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics. …”
Get full text

From Waste Plastics to Carbon Nanotube Audio Cables by Varun Shenoy Gangoli, Tim Yick, Fang Bian, Alvin Orbaek White

“…Carbon nanotubes (CNTs) have long been at the forefront of materials research, with applications ranging from composites for increased tensile strength in construction and sports equipment to transistor switches and solar cell electrodes in energy applications. …”
Get full text

Phase Transitions in Amorphous Germanium under Non-Hydrostatic Compression by Jianing Xu, Lingkong Zhang, Hailun Wang, Yan Gao, Tingcha Wei, Resta A. Susilo, Congwen Zha, Bin Chen, Hongliang Dong, Zhiqiang Chen

“…As the pioneer semiconductor in transistor, germanium (Ge) has been widely applied in information technology for over half a century. …”
Get full text

A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric by Paul Jacob, Pooja C. Patil, Shan Deng, Kai Ni, Khushwant Sehra, Mridula Gupta, Manoj Saxena, David MacMahon, Santosh Kurinec

“…This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the gate dielectric. …”
Get full text

Optical and Electronic NOx Sensors for Applications in Mechatronics by Scott D. Wolter, Michael A. Garcia, Maria Losurdo, Giovanni Bruno, Luisa Torsi, Nicola Cioffi, Eliana Ieva, Pietro Mario Lugarà, Gaetano Scamarcio, Vincenzo Spagnolo, Angela Elia, Cinzia Di Franco, April Brown, Mario Ricco

“…In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. …”
Get full text

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode by Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Ke Wei, Hao Wu, Xinyu Liu, Tianchun Ye, Zhi Jin

“…Based on the study of transient capacitance of SBD, this work could be extended to the Miller capacitance in high electron mobility transistor (HEMT) devices. Moreover, the report on the stability of capacitance is essential for GaN devices, and could be further extended to other aspects of device research.…”
Get full text

Dielectric, piezoelectric, and ferroelectric nanomaterials in the biomedical applications by Fang Wang, Jun‐Yu Huang, Hao Zhang, Qun‐Dong Shen

“…Biomolecular detection methods have been developed, including dielectric‐gated field‐effect transistor, dielectrophoresis, non‐linear dielectric response, and optical tweezer. …”
Get full text

Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules by Seung-Rae Jo, Seok-Min Kim, Sungjoon Cho, Kyo-Beum Lee

“…This paper presents the development of a hardware simulator based on the junction-temperature of insulated-gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs). …”
Get full text

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications by Yue Peng, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang, Yue Hao

“…Abstract We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. …”
Get full text

A 21.4 pW Subthreshold Voltage Reference with 0.020 %/V Line Sensitivity Using DIBL Compensation by Louis Colbach, Taekwang Jang, Youngwoo Ji

“…To achieve near-zero line sensitivity, a two-transistor (2-T) voltage reference is biased with a current source to cancel the drain-induced barrier-lowering (DIBL) effect of the 2-T core, thus improving the line sensitivity. …”
Get full text

Modeling and Prediction of Common Mode Electromagnetic Interference in GaN-Based Switching Power Converters by Chuang Bi, Heyang Shan, Kai Gao, Shaojing Wang, Peng Xu

“…Behavioral models of common mode (CM) electromagnetic interference (EMI) are proposed herein for a GaN high-electron-mobility transistor (HEMT) synchronous buck converter. First, a CM noise model is developed using a linear equivalent circuit that consists of a voltage source, current source, and two noise impedances. …”
Get full text

ISFET‐based sensors for (bio)chemical applications: A review by Shengli Cao, Peng Sun, Gang Xiao, Qiang Tang, Xinyue Sun, Hongyu Zhao, Shuang Zhao, Huibin Lu, Zhao Yue

“…Abstract Ion‐sensitive field effect transistor (ISFET) sensor is a hot topic these years, playing the combined roles of signal recognizer and converter for (bio)chemical analytes. …”
Get full text

A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules by Xiaotong Zhang, Zhuolin Cheng, Chunlin Lv, Xing Sun, Jianying Li, Kangning Wu

“…Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation of IGBT modules. …”
Get full text