Perovskite single-crystal thin films: preparation, surface engineering, and application by Zemin Zhang, Wooyeon Kim, Min Jae Ko, Yuelong Li

“…Third, we summarize the applications of perovskite SCTFs in photovoltaics, photodetectors, light-emitting devices, artificial synapse and field-effect transistor. Finally, the development opportunities and challenges in commercializing perovskite SCTFs are discussed.…”
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Analysis of radiation effects of semiconductor devices based on numerical simulation Fermi–Dirac by Hu Zhanhan, Hernández Danaysa Macías, Martinez Silega Nemuri

“…The ionization radiation damage of typical metal oxide semiconductor (MOS) FET NMOS and bipolar transistor GLPNP is simulated. It was proved that the variation trend was close to a straight line in the temperature range (278–358 K) studied in this article. …”
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Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature by Lining Jia, Qian Lin, Haifeng Wu, Xiaozheng Wang

“…In order to comprehensively grasp the performance changes for the monolithic microwave integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests for a 2.4–4.4 GHz gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain power amplifier (PA) should be investigated. …”
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Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection by Hochan Chang, Do Hoon Lee, Hyun Soo Kim, Jonghyurk Park, Byung Yang Lee

“…Abstract We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. …”
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Recent advancements in urea biosensors for biomedical applications by Saravjeet Singh, Minakshi Sharma, Geeta Singh

“…The review wok of authors present a concise information and brief discussion on the development made in the progress of potentiometric, field effect transistor, graphene, electrochemical, optical, polymeric, nanoparticles and nanocomposites based urea biosensors in the past two decades. …”
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Numerical Full wave Analysis and Modeling of Plasmonic HEMT Performance Using Hydrodynamic Model by Farzaneh Daneshmandian, Abdolali Abdipour, Amir Nader Askarpour

“…The two dimensional (2D) plasmon propagation in the channel of a high electron mobility transistor (HEMT) is numerically modeled using the full wave technique. …”
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Improved NSGA-II and its application in BIW structure optimization by Xiao Wu, Zhiyong Chen, Tao Liu, Haisheng Song, Zhiwei Wang, Wenku Shi

“…Zero-Ductility Transition (ZDT) series functions and Diode-Transistor Logic with Zener diode (DTLZ) series functions are used to calculate and compare the convergence and diversity of three improved algorithms and NSGA-II. …”
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Performance evaluation of efficient combinational logic design using nanomaterial electronics by Md. Abdullah-Al-Shafi, Ali Newaz Bahar, Firdous Ahmad, Kawsar Ahmed

“…Scaling down trend of CMOS transistor is approaching its lowest point, the rational substitute for the CMOS technology to attain advance improvements in terms of size, low power, and device density usage is an imperative essential. …”
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Comparative analysis and improved design of LLC inverters for induction heating by Vicente Esteve, José Jordán, Enrique J. Dede, Pedro J. Martinez, Kevil J. Ferrara, Juan L. Bellido

“…Abstract This work presents a comparative analysis and design procedure of a converter based on an LLC resonant inverter used for induction heating applications depending on the transistor technology used and the selected operating frequency. …”
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Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation by Yongfeng Qu, Ningkang Deng, Yuan Yuan, Wenbo Hu, Hongxia Liu, Shengli Wu, Hongxing Wang

“…The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (SMG) structure devices. …”
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An effective nano design of demultiplexer architecture based on coplanar quantum‐dot cellular automata by Sonia Afrooz, Nima Jafari Navimipour

“…Abstract Quantum‐dot cellular automata (QCA) are prospective nanotechnology with striking performance to tackle the shortcomings of complementary metal‐oxide‐semiconductor (CMOS) transistor‐based technology such as fabrication dimensions and switching speed. …”
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Hybrid quantum thermal machines with dynamical couplings by Fabio Cavaliere, Luca Razzoli, Matteo Carrega, Giuliano Benenti, Maura Sassetti

“…Moreover, the proposed setup can also be used as a high-performance transistor, in terms of output–to–input signal and differential gain. …”
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Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode by Tae-Hyeon Kim, Won-Ho Jang, Jun-Hyeok Yim, Ho-Young Cha

“…In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. …”
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A Fiber Bragg Grating—Bimetal Temperature Sensor for Solar Panel Inverters by Mohd Afiq Ismail, Nizam Tamchek, Muhammad Rosdi Abu Hassan, Katrina D. Dambul, Jeyraj Selvaraj, Nasrudin Abd Rahim, Seyed Reza Sandoghchi, Faisal Rafiq Mahamd Adikan

“…This paper reports the design, characterization and implementation of a Fiber Bragg Grating (FBG)-based temperature sensor for an Insulted-Gate Bipolar Transistor (IGBT) in a solar panel inverter. The FBG is bonded to the higher Coefficient of Thermal Expansion (CTE) side of a bimetallic strip to increase its sensitivity. …”
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Shoot-Through Control-Based Space Vector Modulation Approach for a Modified Z-Source NPC Power Inverter by Samir Noui, Bekheira Tabbache, Farid Hadjou, El-Madjid Berkouk, Zhibin Zhou, Mohamed Benbouzid

“…For this reason, an extra power switch Insulated Gate Bipolar Transistor (IGBT) is added to insert shoot-through, thus eliminating the need for full-shoot-through on any of the three branches of the inverter. …”
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Evaluation of the turn‐off transient controllability for high‐power IGBT modules by Kun Tan, Bing Ji, Jun Wang, Wenjuan Deng, Daohui Li, Zhiqiang Wang, Zheng Liu, Wenping Cao

“…Abstract The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching loop parasitics, which are crucial to their optimized operational behaviours, efficiency and field reliability. …”
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Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications by Haider Abbas, Jiayi Li, Diing Shenp Ang

“…As the conventional transistor-based storage devices and computing systems are approaching their scaling and technical limits, extensive research on emerging technologies is becoming more and more important. …”
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Polarization Gradient Effect of Negative Capacitance LTFET by Hao Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Dong Wang, Xiaoyang Fan, Chen Chong, Chenyu Yin, Tianzhi Gao

“…In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO₂) is proposed. …”
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A Low-Power, Fast-Transient FVF-Based Output-Capacitorless LDO with Push–Pull Buffer and Adaptive Resistance Unit by Yuanzhe Li, Lixin Wang, Yue Wang, Shixin Wang, Mengyao Cui, Min Guo

“…The proposed push–pull buffer was able to provide a large charge and discharge current to increase the slew rate at the gate of the power transistor effectively, thereby improving the transient response of this LDO. …”
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A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 2: Emphasis on Physical Aspects by Moshe Avraham, Sara Stolyarova, Tanya Blank, Sharon Bar-Lev, Gady Golan, Yael Nemirovsky

“…The TMOS is a micromachined CMOS-SOI transistor, which acts as the sensing element and is integrated with a catalytic reaction plate, where ignition of the gas takes place. …”
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