Showing 7,181 - 7,200 results of 8,472 for search '"transistors"', query time: 0.10s Refine Results
  1. 7181

    Simulation Analysis and Performance Comparison for the Memory Cells by SHARMA Vijay Kumar

    Published 2021-10-01
    “…The power delay product (PDP) of the INDEP SRAM cell for the different operating states is improving by a large amount as compared to the conventional 6-transistor (6T) SRAM cell. The static noise margin (SNM) is checked and estimated by using the butterfly and noise (N)-curves.…”
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    Article
  2. 7182

    STEM nanoanalysis of Au/Pt/Ti-Si<sub>3</sub>N<sub>4 </sub>interfacial defects and reactions during local stress of SiGe HBTs by Alaeddine Ali, Genevois C&#233;cile, Chevalier Laurence, Daoud Kaouther

    Published 2011-01-01
    “…<p>Abstract</p> <p>A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe size. …”
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    Article
  3. 7183

    Gate Voltage-Modulated Conductance in Zigzag Graphene Nanoribbon Junctions by Ming Li, Zhi-Bo Feng, Zheng-Yin Zhao

    Published 2023-01-01
    “…These results are helpful to the exploration and application of a new kind of field effect transistor based on ZGNR junctions.…”
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    Article
  4. 7184

    Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell by Naheem Olakunle Adesina

    Published 2023-07-01
    “…This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a metal-oxide semiconductor type graphene nano-ribbon field effect transistor (MOS-GNRFET) and compares the results with another SRAM cell designed using a PTM 10 nm FinFET node. …”
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    Article
  5. 7185

    Analysis of capacitance and charge accumulation for an electric double layer on porous electrode by Yoshihiro Shimazu

    Published 2023-03-01
    “…The configuration of an electric double layer transistor (EDLT) allows for a very high surface charge density that cannot be achieved by solid dielectrics. …”
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    Article
  6. 7186

    Mythological Logocentrism in T. N. Tolstaya’s Novel “Kys” by A. V. Greshilova

    Published 2017-06-01
    “…Therefore, the article considers the world of “Kys’” firstly as the world of literaturocentrism, but in the end it is not such recognized: literaturecentrism as a sociocultural phenomenon in most cases is restricted to a specific time frame, while “Kys’” can be considered rather as transistorizes system. It is noted that Tolstaya in her works gives a broader interpretation to this phenomenon and interprets love to the word as part of the Russian mentality in general. …”
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    Article
  7. 7187

    Conclusive Model-Fit Current–Voltage Characteristic Curves with Kink Effects by Hsin-Chia Yang, Sung-Ching Chi

    Published 2023-11-01
    “…These parameters include k<sub>N</sub> (associated with the sizes of the transistor and mobility), λ (associated with early voltage), and V<sub>th</sub> (the threshold voltage). …”
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    Article
  8. 7188

    Physics of semiconductor materials in high school: possibilities and challenges by Kleber Saldanha de Siqueira

    Published 2023-04-01
    “…To this end, a qualitative bibliographical study will be carried out, bringing together scientific works published in the last two decades that emphasize the need for a curriculum focused on the Physics of the so-called 'active' components, represented mainly by the semiconductor diode and the transistor, completing the exposition of the study of the Electrodynamics in High School. …”
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    Article
  9. 7189

    A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications by Uma Maheshwar Janniekode, Rajendra Prasad Somineni

    Published 2023-01-01
    “…The proposed Low Vth UDVS SRAM cell is demonstrated with a low threshold voltage speed-up transistor and an ultradynamic voltage scaling circuit implemented in 16 nm low-leakage CMOS technology. …”
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    Article
  10. 7190

    Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process by Chienliu Chang, Ching-Liang Dai, Chyan-Chyi Wu, Po-Wei Lu

    Published 2009-10-01
    “…In this study, we fabricated a wireless micro FET (field effect transistor) pressure sensor based on the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. …”
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    Article
  11. 7191
  12. 7192

    Feasibility studies of high data rate ADC by Goo, Yong Soon.

    Published 2009
    “…In particular, the design of the two-stage high speed operational-amplifier has been carried out in transistor level. This operational amplifier is design base on the specification stated in the project; a dedicated fast comparator with fully differential dynamic latch is used to achieve high speed input sample comparisons; a compensated decoder logic circuit is used to produce stable and accurate binary output codes. …”
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    Final Year Project (FYP)
  13. 7193

    Gating-dependent terahertz study of single layer graphene by Sabrina Jumadi

    Published 2014
    “…Terahertz time-domain spectroscopy was employed on a back-gate graphene field-effect transistor for gate voltages between -35 V to 35 V and further measurements have shown that only measurements done from -25 V to 15 V can be trusted. …”
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    Final Year Project (FYP)
  14. 7194

    Ultra-low power 8-bit CMOS adder design based on approximate arithmetic by Hu, Zhengyu

    Published 2019
    “…In addition, the circuits in this paper use the advanced technology of TSMC 40nm at the transistor level in IC design flow.…”
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    Thesis
  15. 7195

    PIC controlled induction heating using resonant technique / Fatimah Rusbiahty Ahmad by Ahmad, Fatimah Rusbiahty

    Published 2008
    “…The controller is developed using Peripheral Interface Controller (PIC) chip and Insulated Gate Bipolar Transistor (IGBT) as the main switching devices. The performance of circuit is compared in terms of power losses occur in the main power switching devices. …”
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    Thesis
  16. 7196

    Low Power Standard Cell Library Design For Application Specific Integrated Circuit by Jambek, Asral Bahari

    Published 2002
    “…The design methodology focuses on all aspect of circuit design: transistor size, logic style, layout style, cell topology, and circuit design for minimum power consumption. …”
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    Thesis
  17. 7197

    Effect of multipulses exposure on excimer laser annealed polycrystalline silicon thin films by Bidin, Noriah, Ab. Razak, Siti Noraiza

    Published 2011
    “…Silicon thin film (STF) is widely used as a transistor. It performance depends on its crystal structure. …”
    Article
  18. 7198

    Analytical investigation of superior gas sensor based on phosphorene by Akbari, Elnaz, Nilashi, Mehrbakhsh, Buntat, Zolkafle

    Published 2019
    “…In this study the structure of field effect transistor (FET) is employed where between the drain and source the phosphorene substance is used as the channel. …”
    Article
  19. 7199

    Application of AI technique for optimal location of TCSC device by Mohd Daim, Mohd Diah

    Published 2010
    “…In this project, there are many applications of power electronics are applied such as transformer, AC to DC converter or rectifier, DC-DC converter, and semicondutor devices like power transistor. The circuit design approaching depends on the combination of these power electronic applications. …”
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    Undergraduates Project Papers
  20. 7200

    Development of DC power supply using power electronic applications by Shamsul Arifin, Zinal Abidine

    Published 2010
    “…In this project, there are many applications of power electronics are applied such as transformer, AC to DC converter or rectifier, DC-DC converter, and semicondutor devices like power transistor. The circuit design approaching depends on the combination of these power electronic applications. …”
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    Undergraduates Project Papers