Monitoring Junction Temperature of RF MOSFET under Its Working Condition Using Fiber Bragg Grating by Zhenmin Liu, Na Chen, Yong Liu, Zhenyi Chen, Fufei Pang, Tingyun Wang

“…When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. …”
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Optomechanically induced gain using a trapped interacting Bose-Einstein condensate by H. Mikaeili, A. Dalafi, M. Ghanaatshoar, B. Askari

“…It is shown that the system behaves as an optical transistor while the cavity is exposed to a weak input optical signal which can be amplified considerably in the cavity output if the system is in the unresolved sideband regime. …”
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Improved Adaptive Droop Control Design for Optimal Power Sharing in VSC-MTDC Integrating Wind Farms by Xiaohong Ran, Shihong Miao, Yingjie Wu

“…With the advance of insulated gate bipolar transistor (IGBT) converters, Multi-Terminal DC (MTDC) based on the voltage-source converter (VSC) has developed rapidly in renewable and electric power systems. …”
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Recent Progress in Multiterminal Memristors for Neuromorphic Applications by Yan‐Bing Leng, Yu‐Qi Zhang, Ziyu Lv, Junjie Wang, Tao Xie, Shirui Zhu, Jingrun Qin, Runze Xu, Ye Zhou, Su‐Ting Han

“…Abstract The essential step for developing neuromorphic systems is to construct more biorealistic elementary devices with rich spatiotemporal dynamics to exhibit highly separable responses in dynamic environmental circumstances. Unlike transistor‐based devices and circuits with zeroth‐order complexity, memristors intrinsically express some simple biomimetic functions. …”
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Analysis of time‐frequency characteristic parameters of electromagnetic interference sources in the basic commutation unit by Bin Hao, Cheng Peng, Xinling Tang, Zhibin Zhao

“…To compensate for the insufficiency of the reported works, that is to use asymmetric trapezoidal waveforms (ATW) as common mode (CM) and differential mode (DM) EMI sources, this paper analyzed the switching transient process of insulated gate bipolar transistor (IGBT) device in the basic commutation unit, and then proposed the equivalent waveform of EMI sources with multi‐polylines‐damped oscillation waveform (MP‐DOW). …”
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Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection by Zhuo Wang, Zhao Qi, Longfei Liang, Ming Qiao, Zhaoji Li, Bo Zhang

“…The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V h). …”
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Scalable graphene sensor array for real-time toxins monitoring in flowing water by Arnab Maity, Haihui Pu, Xiaoyu Sui, Jingbo Chang, Kai J. Bottum, Bing Jin, Guihua Zhou, Yale Wang, Ganhua Lu, Junhong Chen

“…Here, we report the combination of wet transfer, impedance and noise measurements, and machine learning to facilitate the scalable nanofabrication of graphene-based field-effect transistor (GFET) sensor arrays and the efficient identification of faulty devices. …”
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A review of PETT oscillation's characteristics, mechanism, and suppression methods in the IGBT device by Ganyu Feng, Xuebao Li, Xinling Tang, Xiaoguang Wei, Zhibin Zhao

“…In practical application, there are many parallel insulated gate bipolar transistor (IGBT) chips and anti-parallel fast recovery diode (FRD) chips in the IGBT devices. …”
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True Random Number Generator Based on RRAM-Bias Current Starved Ring Oscillator by D. Arumi, S. Manich, A. Gomez-Pau, R. Rodriguez-Montanes, M. B. Gonzalez, F. Campabadal

“…A simple voltage divider composed of this RRAM and a resistor is considered to bias the gate terminal of the extra transistor of every current starved (CS) inverter of the ring oscillator (RO). …”
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Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes by Yi Fang, Ling Chen, Yuqi Liu, Hong Wang

“…We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction. …”
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A New Hybrid Inductor-Based Boost DC-DC Converter Suitable for Applications in Photovoltaic Systems by Ioana-Monica Pop-Calimanu, Septimiu Lica, Sorin Popescu, Dan Lascu, Ioan Lie, Radu Mirsu

“…The topology is still simple, containing only one transistor and three diodes. A detailed dc and ac analysis is performed and all design equations are provided. …”
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A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications by Lian Hu, Ziqiang Yang, Yuan Fang, Qingfeng Li, Yixuan Miao, Xiaofeng Lu, Xuechun Sun, Yaxin Zhang

“…The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. …”
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Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach by Xingliang Liu, Guiyun Tian, Yu Chen, Haoze Luo, Jian Zhang, Wuhua Li

“…In this paper, a non-contact degradation evaluation method for insulated gate bipolar transistor (IGBT) modules is proposed based on eddy current pulsed thermography approach. …”
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K-Band Hetero-Stacked Differential Cascode Power Amplifier with High Psat and Efficiency in 65 nm LP CMOS Technology by Kyu-Jin Choi, Jae-Hyun Park, Seong-Kyun Kim, Byung-Sung Kim

“…A K-band complementary metal-oxide-semiconductor (CMOS) differential cascode power amplifier is designed with the thin-oxide field effect transistor (FET) common source (CS) stage and thick-oxide FET common gate (CG) stage. …”
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Novel Second-Order Fully Differential All-Pass Filter Using CNTFETs by Muhammad I. Masud, Iqbal A. Khan, Syed Abdul Moiz, Waheed A. Younis

“…In this paper, a new carbon nanotube field effect transistor (CNTFET)-based second-order fully differential all-pass filter circuit is presented. …”
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The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application by Jin-Ji Dai, Thi Thu Mai, Umeshwar Reddy Nallasani, Shao-Chien Chang, Hsin-I Hsiao, Ssu-Kuan Wu, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Chieh-Piao Wang, Luc Huy Hoang

“…The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). …”
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Behavioral Analysis and Immunity Design of the RO-Based TRNG under Electromagnetic Interference by Zhiwen Zhang, Tao Su

“…Moreover, the design method of gate-delay differentiation is presented to improve the RF immunity of the RO-based TRNG at a low cost. Both transistor-level simulation and board-level measurement proved the rationality of this scheme.…”
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In Vivo Phenotyping for the Early Detection of Drought Stress in Tomato by Michela Janni, Nicola Coppede, Manuele Bettelli, Nunzio Briglia, Angelo Petrozza, Stephan Summerer, Filippo Vurro, Donatella Danzi, Francesco Cellini, Nelson Marmiroli, Domenico Pignone, Salvatore Iannotta, Andrea Zappettini

“…Here, we report the use of an in vivo OECT (organic electrochemical transistor) sensor, termed as bioristor, in the context of the drought response of the tomato plant. …”
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Non-Hermitian Hamiltonians and Quantum Transport in Multi-Terminal Conductors by Nikolay M. Shubin, Alexander A. Gorbatsevich, Gennadiy Ya. Krasnikov

“…For instance, the influence of the tunneling coupling to the gate electrode is discussed for a model of quantum interference transistor. The results of this paper will be of high interest, in particular, within the field of quantum design of molecular electronic devices.…”
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Hybrid Full Adders: Optimized Design, Critical Review and Comparison in the Energy-Delay Space by Gianluca Giustolisi, Gaetano Palumbo

“…To do so, first we define the procedures to obtain energy consumption and propagation delay by simulating a ripple carry adder designed at a transistor level. Then, we introduce a design methodology to optimize a ripple carry adder by minimizing some significant figures-of-merit in terms of energy-delay trade-offs. …”
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