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7261
Investigation of printable polymers for flexible electronics
Published 2023“…Using PEDOT:PSS (CLEVIOS S V4 STAB) material to be paired with dispensing printing technique to print out an actual all printed flexible electronics, organic electrochemical transistor (OECT). Further investigation on another potential material N-type BBL:PEI polymer ink shows that it has the potential to reach high conductivity that can match P-type conductive polymer in creating a device that can function as well as in electrical performance.…”
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Final Year Project (FYP) -
7262
A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique
Published 2012“…The negative value of gm″ in saturated pseudo differential transistor (PDT) is compensated by the positive value of PDT in subthreshold region. …”
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Conference Paper -
7263
Sensing properties of different classes of gases based on the nanowire-electrode junction barrier modulation
Published 2012“…The role of contact between semiconducting nanowire and metal electrodes in a single nanowire field effect transistor (NW-FET) is investigated for the sensing of different type of gases. …”
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Journal Article -
7264
Electron trap transformation under positive-bias temperature stressing
Published 2013“…Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5.5 MV/cm), independent of the number of times the transistor is stressed and relaxed, and it progressively decreases with the number of stress/relaxation cycles at a higher oxide stress field (~7 MV/cm). …”
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Journal Article -
7265
Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface
Published 2013“…Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. …”
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Journal Article -
7266
Improvements in Qucs-S Equation-Defined Modelling of Semiconductor Devices and IC’s
Published 2017“…To illustrate the new Qucs-S modelling techniques an XSPICE version of the EPFL EKV v2.6 long channel transistor model together with other illustrative examples are described and their performance simulated with Qucs-S and Ngspice.…”
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Conference or Workshop Item -
7267
Recent developments in Qucs-S equation-defined modelling of semiconductor devices and IC’s
Published 2017“…To illustrate the new Qucs-S modelling techniques an XSPICE version of the EPFL EKV v2.6 long channel transistor model together with other illustrative examples are described and their performance simulated with Qucs-S and Ngspice.…”
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Article -
7268
An Integrated Linearization Technique for GaAs Bipolar WCDMA Power Amplifier
Published 2018“…Here we report a novel linearization and efficiency improvement technique for heterojunction bipolar transistor (HBT)-based Wireless Code Division Multiple Access (WCDMA) power amplifier. …”
Article -
7269
A fiber bragg grating-bimetal temperature sensor for solar panel inverters
Published 2011“…This paper reports the design, characterization and implementation of a Fiber Bragg Grating (FBG)-based temperature sensor for an Insulted-Gate Bipolar Transistor (IGBT) in a solar panel inverter. The FBG is bonded to the higher Coefficient of Thermal Expansion (CTE) side of a bimetallic strip to increase its sensitivity. …”
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Article -
7270
Three phase inverter development using common mode voltage pulse width modulation (PWM) method
Published 2013“…The twelve Insulated Gate Bipolar Transistor (IGBTs) was use as a switching device. In the three phase inverter circuit, an Alternating Current (AC) output is synthesized from a Direct Current (DC) input by closing and opening the switches in correct sequence or switching system. …”
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Thesis -
7271
Runtime network-on-chip thermal and power balancing
Published 2017“…These factors directly affect the hot spot formation caused by high power densities developed with increasing per-core transistor number. As a result, reliability decreases along with static power dissipation. …”
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Article -
7272
Device modelling and performance analysis of two-dimensional AlSi3 ballistic nanotransistor
Published 2021“…This paper presents a theoretical study of uniformly doped silicene with aluminium (AlSi3) Field-Effect Transistor (FET) along with the benchmark of device performance metrics with other 2D materials. …”
Article -
7273
Derivation of three phase thyristor pulse with digital delay angle display from single phase circuits /
Published 1993“…Kaedah lama untuk menghasilkan isyarat denyutan untuk cetusan thyristor dengan mengunakan transistor UJT dan alat-ubah denyut, tetapi kawalan sudut fasa mengunakan kaedah gabungan analog dan perenti digit dengan proses janaan denyut semula serta pengukuran sudutnya secara berdigit kurang diberi perhatian. …”
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7274
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7275
SPEKTROSKOPI ARC-SPARK DENGAN MONOKROMATOR
Published 2013-11-01“…Perangkat penelitian terdiri dari High Voltage Supply 0 – 6 kilo Volt, probe 50 Kv, perangkat elektroda pada udara terbuka, lensa fokus 50 mm, monokromator, fotodioda S874-8K3H, rangkaian pengguat arus transistor BC 107, amperemeter digital. Metode penelitian ini adalah penentuan karakteristik unsur dengan mengetahui hubungan panjang gelombang dan intensitas relatif. …”
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Article -
7276
Two-coordinate system of pointing solar batteries to the sun
Published 2019-05-01“…Results: The author has proposed to use in photovoltaic power station in the system of pointing solar battery to the Sun the two-axis actuator containing two valve engines of DBM series, microprocessor system of controlling transistor converters, adaptive control loop, constructed on the principle of the system with reference model and signal self-tuning with the introduction of two derivatives for setting electric drive current to a controller input. …”
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Article -
7277
Recent Advances in Short Circuit Protection Methods for SiC MOSFET
Published 2023-01-01“…Due to its high efficiency, low switching losses, and high temperature stability, Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been widely used in various fields. …”
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Article -
7278
Improving the Efficiency of the Shunt Active Power Filter Acting with the Use of the Hysteresis Current Control Technique
Published 2023-05-01“…The power module of the active filter uses transistor switches to realize the required compensating current. …”
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Article -
7279
Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer
Published 2018-11-01“…Abstract Hydrogenated graphene (HG)/hexagonal boron nitride (h-BN) heterobilayer is an ideal structure for the high-performance field effect transistor. In this paper, the carrier mobilities of HG/h-BN heterobilayer are investigated based on the first-principles calculations by considering the influence of stacking pattern between HG and h-BN, hydrogen coverage and hydrogenation pattern. …”
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Article -
7280
Design and Analysis of Low-Power and High Speed Approximate Adders Using CNFETs
Published 2021-12-01“…In this paper, 10T approximate adder (AA) and 13T approximate adder (AA) designs using carbon nanotube field-effect transistor (CNFET) technology are presented. The simulation for the proposed 10T approximate adder and 13T approximate adder designs were carried out using the HSPICE tool with 32 nm CNFET technology. …”
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Article