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7321
Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory
Published 2023-12-01“…Additionally, the impact of proton displacement damage effects on the performance of a six-transistor SRAM with an asymmetric structure is not well understood. …”
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7322
Comparative Sensibility Study of WO3 ph Sensor Using EGFET and Ciclic Voltammetry
Published 2015-02-01“…In this present study, the investigation about pH sensorial properties of WO3, via sol-gel, was evaluated by Voltammetry and Extended Gate Field Effect Transistor techniques. The X-ray diffractogram indicates the presence of a lamellar structure, d = 0.69 nm, resulting in WO3.2H2O. …”
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7323
Silicene Quantum Capacitance Dependent Frequency Readout to a Label-Free Detection of DNA Hybridization— A Simulation Analysis
Published 2021-06-01“…An ion-sensitive field-effect transistor (ISFET) with a graphene layer has been utilized for detecting DNA hybridization. …”
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7324
DESIGN OF LOW POWER 8T SRAM WITH SCHMITT TRIGGER LOGIC
Published 2014-12-01“…In this paper, a low power design of 8 Transistor SRAM cell with Schmitt Trigger (ST) logic is proposed. …”
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7325
Influence of SiC reinforcement on microstructural and thermal properties of SAC0307 solder joints
Published 2023-01-01“…For the study power MOSFET (metal oxide semiconductor field effect transistor) components were soldered onto metal core printed circuit boards (MCPCBs). …”
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7326
Evaluation of admittance domain behavioural model complexity requirements for Power Amplifier design
Published 2022-10-01“…Abstract In the framework of Power Amplifier (PA) design for communications, frequency domain non‐linear behavioural models have shown their potential as efficient complementary modelling tools when Field Effect Transistor compact models are not available or sufficiently accurate. …”
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7327
All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3
Published 2015-03-01“…We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. …”
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7328
A High-Efficiency Modulation Method of Two-Stage Inverter with Low Voltage Input and High Voltage Output
Published 2023-07-01“…According to the relationship between the absolute value of input voltage and output voltage, the Boost circuit and the full-bridge inverter operate with different modes in the proposed method, which optimizes the insulated gate bipolar transistor(IGBT) switching state and diode on-off state to reduce the loss of the inverter and improve the efficiency of the inverter. …”
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7329
The Cost of Energy-Efficiency in Digital Hardware: The Trade-Off between Energy Dissipation, Energy–Delay Product and Reliability in Electronic, Magnetic and Optical Binary Switche...
Published 2021-06-01“…Here, we show the trade-off between energy dissipation, energy–delay product and error–probability for an electronic switch (a metal oxide semiconductor field effect transistor), a magnetic switch (a magnetic tunnel junction switched with spin transfer torque) and an optical switch (bistable non-linear mirror). …”
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7330
Analytical Study of Front-End Circuits Coupled to Silicon Photomultipliers for Timing Performance Estimation under the Influence of Parasitic Components
Published 2020-08-01“…The results provided by the model have been successfully compared with experimental measurements from a front-end circuit with variable configuration based on a bipolar junction transistor (BJT), coupled to a 3 × 3 mm<sup>2</sup> SiPM stimulated by a fast-pulsed laser source.…”
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7331
Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier
Published 2021-01-01“…The depletion mode of a gallium nitride high-electron-mobility transistor (GaN HEMT) was used to switch the states in a class-E amplifier circuit in this high frequency. …”
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7332
Giant thermoelectric effects in a proximity-coupled superconductor–ferromagnet device
Published 2014-01-01“…We focus on the Seebeck effect being a direct measure of the local thermoelectric response and find that a thermopower of the order of $\sim 250$ $\mu V\;{{K}^{-1}}$ can be achieved in a transistor-like structure. A measurement of the thermopower can furthermore be used to determine quantitatively the spin-dependent interface parameters that induce the spin splitting. …”
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7333
Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling
Published 2016-01-01“…Due to the coupling between K and ${K}^{\prime }$ valleys of pristine graphene by $\sqrt{3}\times \sqrt{3}$ supercells, we propose a valley-field-effect transistor based on the armchair carbon nanotube, where the valley polarization of the current can be tuned by applying a gate voltage or varying the length of the armchair carbon nanotubes.…”
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7334
A Low Noise Amplifier for Neural Spike Recording Interfaces
Published 2015-09-01“…Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. …”
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7335
Application of a Heat Flux Sensor in Wind Power Electronics
Published 2016-06-01“…In the current research, an insulated-gate bipolar transistor (IGBT) module-based test setup with the GHFS implemented on the base plate of one of the IGBTs is introduced. …”
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7336
A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems
Published 2023-04-01“…The circuit consists of delay cells with an unbiased differential series voltage switch logic structure with a tail current transistor. By reducing sensitive nodes and using the positive feedback of the loop, the recovery process of the VCO circuit to the single-event transient (SET) is reduced and accelerated, so as to reduce the sensitivity of the circuit to the single-event effect. …”
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7337
A Review of Techniques for RSS-Based Radiometric Partial Discharge Localization
Published 2021-01-01“…This paper explores the advantages and disadvantages of radiometric techniques and presents an overview of a radiometric PD detection technique that uses a transistor reset integrator (TRI)-based wireless sensor network (WSN).…”
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7338
Wide word‐length carry‐select adder design using ripple carry and carry look‐ahead method based hybrid 4‐bit carry generator
Published 2024-02-01“…Abstract This research aims to fill up the research gap in energy‐efficient transistor‐level wide word‐length carry circuit generator by using ripple carry (RC) and carry look‐ahead (CLA) method‐based hybrid 4‐bit carry generation process for wide word‐length carry‐select adder (CSLA). …”
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7339
High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT
Published 2023-01-01“…The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency. …”
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7340
A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction
Published 2023-01-01“…This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. …”
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