Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory by Yan Liu, Rongxing Cao, Jiayu Tian, Yulong Cai, Bo Mei, Lin Zhao, Shuai Cui, He Lv, Xianghua Zeng, Yuxiong Xue

“…Additionally, the impact of proton displacement damage effects on the performance of a six-transistor SRAM with an asymmetric structure is not well understood. …”
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Comparative Sensibility Study of WO3 ph Sensor Using EGFET and Ciclic Voltammetry by Renata de Castro Campos, Dane Tadeu Cestarolli, Marcelo Mulato, Elidia Maria Guerra

“…In this present study, the investigation about pH sensorial properties of WO3, via sol-gel, was evaluated by Voltammetry and Extended Gate Field Effect Transistor techniques. The X-ray diffractogram indicates the presence of a lamellar structure, d = 0.69 nm, resulting in WO3.2H2O. …”
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Silicene Quantum Capacitance Dependent Frequency Readout to a Label-Free Detection of DNA Hybridization— A Simulation Analysis by Md. Sazzadur Rahman, Rokaia Laizu Naima, Khatuna Jannatun Shetu, Md. Mahabub Hossain, M. Shamim Kaiser, A. S. M. Sanwar Hosen, Md. Abdul Latif Sarker, Kelvin J. A. Ooi

“…An ion-sensitive field-effect transistor (ISFET) with a graphene layer has been utilized for detecting DNA hybridization. …”
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DESIGN OF LOW POWER 8T SRAM WITH SCHMITT TRIGGER LOGIC by A. KISHORE KUMAR, D. SOMASUNDARESWARI, V. DURAISAMY, T. SHUNBAGA PRADEEPA

“…In this paper, a low power design of 8 Transistor SRAM cell with Schmitt Trigger (ST) logic is proposed. …”
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Influence of SiC reinforcement on microstructural and thermal properties of SAC0307 solder joints by Agata Skwarek, Balázs Illés, Paweł Górecki, Adrian Pietruszka, Jacek Tarasiuk, Tamás Hurtony

“…For the study power MOSFET (metal oxide semiconductor field effect transistor) components were soldered onto metal core printed circuit boards (MCPCBs). …”
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Evaluation of admittance domain behavioural model complexity requirements for Power Amplifier design by Maria Rocio Moure, Michael Casbon, Nicolas Ladero, Monica Fernandez‐Barciela, Paul J. Tasker

“…Abstract In the framework of Power Amplifier (PA) design for communications, frequency domain non‐linear behavioural models have shown their potential as efficient complementary modelling tools when Field Effect Transistor compact models are not available or sufficiently accurate. …”
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All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3 by Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char

“…We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. …”
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A High-Efficiency Modulation Method of Two-Stage Inverter with Low Voltage Input and High Voltage Output by KUANG Yonghong, XIE Wei, TIAN Li, LIN Yuan, ZHOU Xifeng

“…According to the relationship between the absolute value of input voltage and output voltage, the Boost circuit and the full-bridge inverter operate with different modes in the proposed method, which optimizes the insulated gate bipolar transistor(IGBT) switching state and diode on-off state to reduce the loss of the inverter and improve the efficiency of the inverter. …”
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The Cost of Energy-Efficiency in Digital Hardware: The Trade-Off between Energy Dissipation, Energy–Delay Product and Reliability in Electronic, Magnetic and Optical Binary Switche... by Rahnuma Rahman, Supriyo Bandyopadhyay

“…Here, we show the trade-off between energy dissipation, energy–delay product and error–probability for an electronic switch (a metal oxide semiconductor field effect transistor), a magnetic switch (a magnetic tunnel junction switched with spin transfer torque) and an optical switch (bistable non-linear mirror). …”
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Analytical Study of Front-End Circuits Coupled to Silicon Photomultipliers for Timing Performance Estimation under the Influence of Parasitic Components by Pietro Antonio Paolo Calò, Savino Petrignani, Michele Di Gioia, Cristoforo Marzocca

“…The results provided by the model have been successfully compared with experimental measurements from a front-end circuit with variable configuration based on a bipolar junction transistor (BJT), coupled to a 3 × 3 mm² SiPM stimulated by a fast-pulsed laser source.…”
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Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier by Ching-Yao Liu, Guo-Bin Wang, Chih-Chiang Wu, Edward Yi Chang, Stone Cheng, Wei-Hua Chieng

“…The depletion mode of a gallium nitride high-electron-mobility transistor (GaN HEMT) was used to switch the states in a class-E amplifier circuit in this high frequency. …”
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Giant thermoelectric effects in a proximity-coupled superconductor–ferromagnet device by P Machon, M Eschrig, W Belzig

“…We focus on the Seebeck effect being a direct measure of the local thermoelectric response and find that a thermopower of the order of $\sim 250$ $\mu V\;{{K}^{-1}}$ can be achieved in a transistor-like structure. A measurement of the thermopower can furthermore be used to determine quantitatively the spin-dependent interface parameters that induce the spin splitting. …”
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Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling by Fuming Xu, Zhizhou Yu, Yafei Ren, Bin Wang, Yadong Wei, Zhenhua Qiao

“…Due to the coupling between K and ${K}^{\prime }$ valleys of pristine graphene by $\sqrt{3}\times \sqrt{3}$ supercells, we propose a valley-field-effect transistor based on the armchair carbon nanotube, where the valley polarization of the current can be tuned by applying a gate voltage or varying the length of the armchair carbon nanotubes.…”
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A Low Noise Amplifier for Neural Spike Recording Interfaces by Jesus Ruiz-Amaya, Alberto Rodriguez-Perez, Manuel Delgado-Restituto

“…Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. …”
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Application of a Heat Flux Sensor in Wind Power Electronics by Elvira Baygildina, Liudmila Smirnova, Kirill Murashko, Raimo Juntunen, Andrey Mityakov, Mikko Kuisma, Olli Pyrhönen, Pasi Peltoniemi, Katja Hynynen, Vladimir Mityakov, Sergey Sapozhnikov

“…In the current research, an insulated-gate bipolar transistor (IGBT) module-based test setup with the GHFS implemented on the base plate of one of the IGBTs is introduced. …”
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A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems by Qi Xiang, Hongxia Liu, Yulun Zhou

“…The circuit consists of delay cells with an unbiased differential series voltage switch logic structure with a tail current transistor. By reducing sensitive nodes and using the positive feedback of the loop, the recovery process of the VCO circuit to the single-event transient (SET) is reduced and accelerated, so as to reduce the sensitivity of the circuit to the single-event effect. …”
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A Review of Techniques for RSS-Based Radiometric Partial Discharge Localization by David W. Upton, Keyur K. Mistry, Peter J. Mather, Zaharias D. Zaharis, Robert C. Atkinson, Christos Tachtatzis, Pavlos I. Lazaridis

“…This paper explores the advantages and disadvantages of radiometric techniques and presents an overview of a radiometric PD detection technique that uses a transistor reset integrator (TRI)-based wireless sensor network (WSN).…”
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Wide word‐length carry‐select adder design using ripple carry and carry look‐ahead method based hybrid 4‐bit carry generator by Mehedi Hasan, Sujan Chowdhury, Omar Faruqe, Arindom Chakraborty, Hasan U. Zaman, Sharnali Islam

“…Abstract This research aims to fill up the research gap in energy‐efficient transistor‐level wide word‐length carry circuit generator by using ripple carry (RC) and carry look‐ahead (CLA) method‐based hybrid 4‐bit carry generation process for wide word‐length carry‐select adder (CSLA). …”
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High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT by Jeff Shih-Chieh Chien, Wonho Lee, James F. Buckwalter

“…The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency. …”
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A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction by Xianhe Sang, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan, Dandan Sang

“…This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. …”
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