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  1. 7361

    A Machine-Learning Strategy to Detect Mura Defects in a Low-Contrast Image by Piecewise Gamma Correction by Zo-Han Lin, Qi-Yuan Lai, Hung-Yuan Li

    Published 2024-02-01
    “…A detection and classification machine-learning model to inspect Thin Film Transistor Liquid Crystal Display (TFT-LCD) Mura is proposed in this study. …”
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    Article
  2. 7362

    Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron–Phonon Monte Carlo Simulations and a Two Temperature Model by Anish Muthukunnil Joseph, Bingyang Cao

    Published 2022-02-01
    “…Overall, the domain mimics the two-dimensional electron gas (2DEG) channel of a typical GaN high electron mobility transistor (HEMT). High energy electrons entering the domain from the source interact with the phonons, and drift under the influence of an external electric field. …”
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  3. 7363

    Channel Length Biasing for Improving Read Margin of the 8T SRAM at Near Threshold Operation by Ik Joon Chang, Yesung Kang, Youngmin Kim

    Published 2019-05-01
    “…In this paper, we investigate the channel length biasing effect on the read access transistor of the 8T SRAM in NTC and compare this with 6T SRAM. …”
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    Article
  4. 7364

    Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars by Leon Brackmann, Tobias Ziegler, Atousa Jafari, Dirk J. Wouters, Mehdi B. Tahoori, Stephan Menzel

    Published 2024-03-01
    “…However, sneak‐path currents in passive resistive random access memory (RRAM) crossbars degrade the operation reliability and require the usage of active 1 Transistor–1 Resistance (1T‐1R) bitcell designs. In this article, the arithmetic performance and reliability are investigated based on experimental measurements and variability‐aware circuit simulations. …”
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    Article
  5. 7365

    Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C by Anya Curran, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley, Farzan Gity

    Published 2021-02-01
    “…Test structures fabricated with an aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum I<sub>ON</sub>/I<sub>OFF</sub> > 250 achieved at −50 °C and I<sub>ON</sub>/I<sub>OFF</sub> = 90 at room temperature. …”
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  6. 7366

    High-Density Spin&#x2013;Orbit Torque Magnetic Random Access Memory With Voltage-Controlled Magnetic Anisotropy/Spin-Transfer Torque Assist by Piyush Kumar, Azad Naeemi

    Published 2022-01-01
    “…This article explores an area saving scheme for spin&#x2013;orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs). …”
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    Article
  7. 7367

    Horizontally Aligned Carbon Nanotube Based Biosensors for Protein Detection by Hu Chen, Jingfeng Huang, Derrick Wen Hui Fam, Alfred Iing Yoong Tok

    Published 2016-09-01
    “…A novel horizontally aligned single-walled carbon nanotube (CNT) Field Effect Transistor (FET)-based biosensing platform for real-time and sensitive protein detections is proposed. …”
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    Article
  8. 7368

    Modulation, Shaping and Replicability of UWB Chaotic Radiopulses for Wireless Sensor Applications by Lev V. Kuzmin, Elena V. Efremova, Vadim V. Itskov

    Published 2023-08-01
    “…The considered method allows us to resolve this contradiction. A single-transistor chaotic oscillator with single power supply and frequency range 100 to 500 MHz is proposed. …”
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    Article
  9. 7369

    A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 3: Extending the Chemical Modeling by Boris Goikhman, Moshe Avraham, Sharon Bar-Lev, Sara Stolyarova, Tanya Blank, Yael Nemirovsky

    Published 2023-01-01
    “…The TMOS is a micromachined CMOS-SOI transistor, which acts as the sensing element and is integrated with a catalytic reaction plate, where ignition of the gas takes place. …”
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    Article
  10. 7370

    Evaluation and Perspective of Analog Low-Dropout Voltage Regulators: A Review by Tan Yee Chyan, Harikrishnan Ramiah, S. F. Wan Muhamad Hatta, Nai Shyan Lai, Chee-Cheow Lim, Yong Chen, Pui-In Mak, Rui P. Martins

    Published 2022-01-01
    “…For operation with a low quiescent current, the bandwidth is reduced due to low transconductance, resulting in the limited gate driving capabilities in terms of charging and discharging the large gate capacitance of the pass or output transistor. In addition, the preference for system-on-chip design in the absence of large off-chip capacitors arises stability issues. …”
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    Article
  11. 7371

    High Responsivity Thermopile Sensors Featuring a Mosaic Structure by Elisabetta Moisello, Maria Eloisa Castagna, Antonella La Malfa, Giuseppe Bruno, Piero Malcovati, Edoardo Bonizzoni

    Published 2022-06-01
    “…The mosaic structure is based on the one employed for the thermal sensor known as TMOS, which consists of a CMOS-SOI transistor embedded in a suspended and thermally isolated absorbing membrane, released through microelectro mechanical system (MEMS) post-processing. …”
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    Article
  12. 7372

    Efficient design and analysis of secure CMOS logic through logic encryption by Sai Srinivas Chandra, R. Jagadeesh Kannan, B. Saravana Balaji, Sreehari Veeramachaneni, Sk. Noor Mahammad

    Published 2023-01-01
    “…This paper aims to bring a trade-off between these parameters, with security being the main key factor, and ensure the design metrics by proposing a novel transistor-level method of logic encryption for CMOS gates. …”
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    Article
  13. 7373

    Output Waveform Distortion Suppression Method of Asymmetric Sine Wave Inverter Based on Online Identification and Linearization of System Transmission Characteristics by Jichao Ning, Hongqi Ben, Jinhui Li, Xuesong Wang, Tao Meng

    Published 2023-10-01
    “…Limited by the switching frequency of an insulated gate bipolar transistor (IGBT), the system bandwidth of high-power inverters is low. …”
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  14. 7374

    Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films by Jin Wang, Yongkang Xu, Shuanghai Wang, Xingze Dai, Pengfei Yan, Jian Zhou, Ruifeng Wang, Yongbing Xu, Liang He

    Published 2024-01-01
    “…This work focuses on investigating the magneto‐transport properties of ultra‐thin CrTe2 Field Effect Transistor (FET) under the influence of top gate biases. …”
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    Article
  15. 7375

    Ferroelectric Tuning of ZnO Ultraviolet Photodetectors by Haowei Xie, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi, Yu-Jia Zeng

    Published 2022-09-01
    “…The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. …”
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  16. 7376

    Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions by Ygor Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul

    Published 2020-02-01
    “…However, the importance of considering SET in Very-Large-System-Integration (VLSI) circuits increases given the reduction of the transistor dimensions and the logic data path depth in advanced technology nodes. …”
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    Article
  17. 7377

    Design of an Highly Efficient AC-DC-AC Three-Phase Converter Using SiC for UPS Applications by Wendell C. Alves, Lenin M. F. Morais, Porfirio C. Cortizo

    Published 2018-12-01
    “…Experimental results obtained with the prototype prove the high efficiency and high power density achievable with Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (MOSFETs).…”
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  18. 7378

    A Multi-Source Co-Simulation Method for the Thermal Stability of GaAs Sub-6G Power Amplifier with Adjustable Bias Current by Yuanbo Ma, Zhaohui Wu, Bin Li

    Published 2022-06-01
    “…In this paper, the thermal stability of GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) in a sub-6G band has been improved by a multi-source co-simulation method. …”
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    Article
  19. 7379

    Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors by Najihah Fauzi, Rahil Izzati Mohd Asri, Mohamad Faiz Mohamed Omar, Asrulnizam Abd Manaf, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul

    Published 2023-01-01
    “…High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. …”
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    Article
  20. 7380

    The Evaluation of Energy Conservation Performance on Electricity: A Case Study of the TFT-LCD Optronics Industry by Ven-Shing Wang, Cheng-Fong Sie, Ta-Yuan Chang, Keh-Ping Chao

    Published 2016-03-01
    “…This study describes the performance evaluation of an energy management system, based on electricity consumption, for a Gen 6 Thin Film Transistor Liquid Crystal Display (TFT-LCD) panel plant. …”
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    Article