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7481
A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation
Published 2023-01-01“…In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-Magnetic-Tunnel-Junction (10T2DMTJ) non-volatile (NV) ternary content-addressable memory (TCAM) with sub-nanosecond search operation. …”
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7482
Design and Implementation of Improved Gate Driver Circuit for Sensorless Permanent Magnet Synchronous Motor Control
Published 2024-03-01“…Practical issues regarding the motor control circuit, such as the effects of parasitic element behavior on the switching components in the insulated gate bipolar transistor-driven inverter, were discussed in this study. …”
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7483
Rail to Rail ICMR and High Performance ULV Standard-Cell-Based Comparator for Biomedical and IoT Applications
Published 2024-01-01“…A detailed theoretical analysis based on transistor level modeling is provided to explain the operating principle and highlight the performance advantages of the proposed comparator. …”
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7484
Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors
Published 2020-09-01“…Electrolyte–insulator–semiconductor (EIS) sensors, used in applications such as pH sensing and sodium ion sensing, are the most basic type of ion-sensitive field-effect transistor (ISFET) membranes. Currently, some of the most popular techniques for synthesizing such sensors are chemical vapor deposition, reactive sputtering and sol-gel deposition. …”
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7485
ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs
Published 2021-01-01“…In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics of cascade Schottky diodes on ESD protection was investigated. …”
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7486
Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
Published 2016-01-01“…We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. …”
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7487
Design of Solid State Tesla Coil With Music Playback Functionality
Published 2024-01-01“…The primary coil of the Tesla transformer was controlled using an insulated-gate bipolar transistor (IGBT) based half bridge circuit.…”
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7488
A Novel Highly Linear Voltage-To-Time Converter (VTC) Circuit for Time-Based Analog-To-Digital Converters (ADC) Using Body Biasing
Published 2020-12-01“…In this paper, two novel voltage-to-time converters are proposed at which the input voltage signal is connected to the body terminal of the starving transistor rather than its gate terminal. These novel converters exhibit better linearity, which is analytically proven in this paper. …”
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7489
Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors
Published 2016-11-01“…This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). …”
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7490
High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier
Published 2022-07-01“…This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. …”
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7491
Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices
Published 2024-01-01“…Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. …”
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7492
P3HT Processing Study for In-Liquid EGOFET Biosensors: Effects of the Solvent and the Surface
Published 2019-10-01“…In this study, we investigate the effect of the solvent and of the substrate modification on thin films of organic semiconductor Poly(3-hexylthiophene) (P3HT) in order to improve the stability and electrical properties of an Electrolyte Gated Organic Field Effect Transistor (EGOFET) biosensor. The studied surface is the relevant interface between the P3HT and the electrolyte acting as gate dielectric for in-liquid detection of an analyte. …”
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7493
Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device
Published 2015-12-01“…This paper presents a study of optimizing input process parameters on leakage current (IOFF) in silicon-on-insulator (SOI) Vertical Double-Gate,Metal Oxide Field-Effect-Transistor (MOSFET) by using L36 Taguchi method. The performance of SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF) value. …”
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7494
Acid-Modulated Peptide Synthesis for Application on Oxide Biosensor Interfaces
Published 2023-12-01“…We initially selected a controlled pore glass (CPG) as a support for solid-phase peptide synthesis (SPPS) to implement a chemistry that can be performed at the interface of multiple field effect transistor (FET) sensors, eventually to generate label-free peptide microarrays for protein screening. …”
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7495
Thermal and Electric Parameter Analysis of DC–DC Module Based on Resonant Switched Capacitor Converter
Published 2022-09-01“…A printed circuit board is utilized not only for the resonant inductance design but also for cooling transistor and diode devices. The paper demonstrates the design concept and the achieved parameters. …”
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7496
Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub>-Si Structure During Long-Term Operation
Published 2019-04-01“…We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub>-Si. …”
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7497
Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs
Published 2020-08-01“…A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior into the gate insulator as well as the GaN buffer layer. …”
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7498
Fuzzy-based maximum power point tracking (MPPT) control system for photovoltaic power generation system
Published 2023-12-01“…The primary circuit is designed with a DC-DC Boost architecture and a single MOSFET transistor. The Fuzzy Logic Controller (FLC) unit in MATLAB/Simulink generates an output variable led by two input variables via the Fuzzy Logic Controller unit. …”
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7499
Multi-Phase Modular Drive System: A Case Study in Electrical Aircraft Applications
Published 2017-12-01“…The power converter of the drive system is based on Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistor (SiC MOSFET) technology to operate at high voltage, high frequency and low reverse recovery current. …”
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7500
Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis
Published 2020-08-01“…The whole life cycle of an insulated gate bipolar transistor (IGBT) is a kind of asymmetry process, while the whole life cycles of a set of IGBTs can be regarded as a symmetry process. …”
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