A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation by Esteban Garzon, Leonid Yavits, Giovanni Finocchio, Mario Carpentieri, Adam Teman, Marco Lanuzza

“…In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-Magnetic-Tunnel-Junction (10T2DMTJ) non-volatile (NV) ternary content-addressable memory (TCAM) with sub-nanosecond search operation. …”
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Design and Implementation of Improved Gate Driver Circuit for Sensorless Permanent Magnet Synchronous Motor Control by Indra Ferdiansyah, Tsuyoshi Hanamoto

“…Practical issues regarding the motor control circuit, such as the effects of parasitic element behavior on the switching components in the insulated gate bipolar transistor-driven inverter, were discussed in this study. …”
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Rail to Rail ICMR and High Performance ULV Standard-Cell-Based Comparator for Biomedical and IoT Applications by Riccardo Della Sala, Francesco Centurelli, Giuseppe Scotti, Gaetano Palumbo

“…A detailed theoretical analysis based on transistor level modeling is provided to explain the operating principle and highlight the performance advantages of the proposed comparator. …”
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Effects of CF₄ Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors by Chyuan-Haur Kao, Yen-Lin Su, Wei-Jen Liao, Ming-Hsien Li, Wei-Lun Chan, Shang-Che Tsai, Hsiang Chen

“…Electrolyte–insulator–semiconductor (EIS) sensors, used in applications such as pH sensing and sodium ion sensing, are the most basic type of ion-sensitive field-effect transistor (ISFET) membranes. Currently, some of the most popular techniques for synthesizing such sensors are chemical vapor deposition, reactive sputtering and sol-gel deposition. …”
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ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs by Shi-Zhe Hong, Shen-Li Chen

“…In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics of cascade Schottky diodes on ESD protection was investigated. …”
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Extracting inter-dot tunnel couplings between few donor quantum dots in silicon by S K Gorman, M A Broome, J G Keizer, T F Watson, S J Hile, W J Baker, M Y Simmons

“…We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. …”
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Design of Solid State Tesla Coil With Music Playback Functionality by Naman Tanwar, M. Rajesh Kumar, Rani Chinnappa Naidu

“…The primary coil of the Tesla transformer was controlled using an insulated-gate bipolar transistor (IGBT) based half bridge circuit.…”
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A Novel Highly Linear Voltage-To-Time Converter (VTC) Circuit for Time-Based Analog-To-Digital Converters (ADC) Using Body Biasing by Ahmed Elgreatly, Ahmed Dessouki, Hassan Mostafa, Rania Abdalla, El-sayed El-Rabaie

“…In this paper, two novel voltage-to-time converters are proposed at which the input voltage signal is connected to the body terminal of the starving transistor rather than its gate terminal. These novel converters exhibit better linearity, which is analytically proven in this paper. …”
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Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors by Shoji Kawahito, Min-Woong Seo

“…This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). …”
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High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier by Radin Za’im, Jafferi Jamaludin, Yushaizad Yusof, Nasrudin Abd Rahim

“…This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. …”
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Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices by Kaihong Wang, Yidi Zhu, Hao Zhao, Ruixue Zhao, Binxin Zhu

“…Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. …”
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P3HT Processing Study for In-Liquid EGOFET Biosensors: Effects of the Solvent and the Surface by Matteo Parmeggiani, Alessio Verna, Alberto Ballesio, Matteo Cocuzza, Erik Piatti, Vittorio Fra, Candido Fabrizio Pirri, Simone Luigi Marasso

“…In this study, we investigate the effect of the solvent and of the substrate modification on thin films of organic semiconductor Poly(3-hexylthiophene) (P3HT) in order to improve the stability and electrical properties of an Electrolyte Gated Organic Field Effect Transistor (EGOFET) biosensor. The studied surface is the relevant interface between the P3HT and the electrolyte acting as gate dielectric for in-liquid detection of an analyte. …”
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Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device by K.E. Kaharudin, F. Salehuddin, A.S.M. Zain, M.N.I. Abd Aziz

“…This paper presents a study of optimizing input process parameters on leakage current (IOFF) in silicon-on-insulator (SOI) Vertical Double-Gate,Metal Oxide Field-Effect-Transistor (MOSFET) by using L36 Taguchi method. The performance of SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF) value. …”
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Acid-Modulated Peptide Synthesis for Application on Oxide Biosensor Interfaces by Edgar Cristóbal-Lecina, Janwa El-Maiss, Eduard Figueras, Aruna Chandra Singh, Sivashankar Krishnamoorthy, Thomas Østerbye, César Pascual García, David Andreu

“…We initially selected a controlled pore glass (CPG) as a support for solid-phase peptide synthesis (SPPS) to implement a chemistry that can be performed at the interface of multiple field effect transistor (FET) sensors, eventually to generate label-free peptide microarrays for protein screening. …”
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Thermal and Electric Parameter Analysis of DC–DC Module Based on Resonant Switched Capacitor Converter by Robert Stala, Adam Piłat, Maciej Chojowski, Mikołaj Skowron, Szymon Folmer

“…A printed circuit board is utilized not only for the resonant inductance design but also for cooling transistor and diode devices. The paper demonstrates the design concept and the achieved parameters. …”
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Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta₂O₅-SiO₂-Si Structure During Long-Term Operation by Boris Podlepetsky, Nikolay Samotaev, Marina Nikiforova, Andrew Kovalenko

“…We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta₂O₅-SiO₂-Si. …”
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Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs by Ki-Sik Im, Mallem Siva Pratap Reddy, Yeo Jin Choi, Youngmin Hwang, Sung Jin An, Jea-Seung Roh

“…A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior into the gate insulator as well as the GaN buffer layer. …”
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Fuzzy-based maximum power point tracking (MPPT) control system for photovoltaic power generation system by Kifayat Ullah, Muhammad Ishaq, Fairouz Tchier, Hijaz Ahmad, Zubair Ahmad

“…The primary circuit is designed with a DC-DC Boost architecture and a single MOSFET transistor. The Fuzzy Logic Controller (FLC) unit in MATLAB/Simulink generates an output variable led by two input variables via the Fuzzy Logic Controller unit. …”
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Multi-Phase Modular Drive System: A Case Study in Electrical Aircraft Applications by Charles Onambele, Moataz Elsied, Augustin Mpanda Mabwe, Ahmed El Hajjaji

“…The power converter of the drive system is based on Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistor (SiC MOSFET) technology to operate at high voltage, high frequency and low reverse recovery current. …”
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Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis by Huawei Wu, Congjin Ye, Yuanjin Zhang, Jingquan Nie, Yong Kuang, Zhixiong Li

“…The whole life cycle of an insulated gate bipolar transistor (IGBT) is a kind of asymmetry process, while the whole life cycles of a set of IGBTs can be regarded as a symmetry process. …”
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