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7521
Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations
Published 2024-01-01“…GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. …”
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7522
Pressure-controlled magnetism in 2D molecular layers
Published 2023-06-01“…Abstract Long-range magnetic ordering of two-dimensional crystals can be sensitive to interlayer coupling, enabling the effective control of interlayer magnetism towards voltage switching, spin filtering and transistor applications. With the discovery of two-dimensional atomically thin magnets, a good platform provides us to manipulate interlayer magnetism for the control of magnetic orders. …”
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7523
Adaptive Charge-Compensation-Based Variable On-Time Control to Improve Input Current Distortion for CRM Boost PFC Converter
Published 2022-05-01“…To verify the effectiveness of the proposed strategy, a 200 W prototype is built using the GaN HEMT transistor, where the THD is reduced to 1.4% at full load.…”
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7524
Research and analysis of electromagnetic interference of a motor drive control system based on PMSM with SiC MOSFET for new energy electric vehicles
Published 2024-03-01“…In the context of new energy electric vehicles (NEEVs), the wide-bandgap semiconductor known as the silicon carbide–metal oxide–semiconductor field-effect transistor (SiC MOSFET) and the permanent magnet synchronous motor (PMSM) have emerged as advantageous sources. …”
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7525
MOS-FET as a Current Sensor in Power Electronics Converters
Published 2015-07-01“…This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on UDS voltage measurement. …”
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7526
Analysis of effects of MOSFET parasitic capacitance on non-synchronous buck converter electromagnetic emission
Published 2023-08-01“…This paper aims to extract the correlation between parasitic capacitances of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and its influence in Electromagnetic (EM) Emission level of non-synchronous buck converter. …”
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7527
Enhancing the critical temperature of strained Niobium films
Published 2020-01-01“…The application of hydrostatic pressure compensated for the intrinsic strain of the film and increased its T _c , which could also be enhanced by increasing the hole concentration with an electric double-layer transistor. A liquid electrolyte should be used as a pressure medium for applying hydrostatic pressure to increase the T _c of correlated materials, where this increase results from changes in material structure and carrier concentration.…”
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7528
A Broadband Enhanced Structure-Preserving Reduced-Order Interconnect Macromodeling Method for Large-Scale Equation Sets of Transient Interconnect Circuit Problems
Published 2020-11-01“…The proposed method is validated by the numerical results on a transient problem of an insulated-gate bipolar transistor (IGBT)-based inverter busbar under different exciting conditions.…”
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7529
Iron Loss Minimization Strategy for Predictive Torque Control of Induction Motor
Published 2020-03-01“…However, the utilization of a VSI introduces additional voltage and current distortion, which leads to additional power losses in the machine’s magnetic circuit. Both the transistor switching frequency and the type of the inverter control determine the total harmonic distortion (THD) of the motor’s phase currents. …”
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7530
Expanding Bias-instability of MEMS Silicon Oscillating Accelerometer Utilizing AC Polarization and Self-Compensation
Published 2020-03-01“…In contrast to the conventional DC (direct current) scheme, AC polarization breaks the trade-off between input transistor gate size and white noise floor of TIA, a relative low input loading capacitance can be implemented for low noise consideration. …”
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7531
A Walsh-Based Arbitrary Waveform Generator for 5G Applications in 28nm FD-SOI CMOS Technology
Published 2023-01-01“…A high-level simulation study is performed as well as transistor-level simulation including post-layout and Monte-Carlo analysis. …”
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7532
Microscopic contributions to the entropy production at all times: from nonequilibrium steady states to global thermalization
Published 2024-01-01“…Based on exact integration of the Schrödinger equation, we numerically study microscopic contributions to the entropy production for the single electron transistor, a paradigmatic model describing a single Fermi level tunnel coupled to two baths of free fermions. …”
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7533
Recent Progress of Switching Power Management for Triboelectric Nanogenerators
Published 2022-02-01“…Secondly, according to the switch types, the existing power management methods are summarized and divided into four categories: travel switch, voltage trigger switch, transistor switch of discrete components and integrated circuit switch. …”
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7534
A High-Precision Circuit-Simulator-Compatible Model for Constant Phase Element Using Rational Function Approximation
Published 2023-01-01“…Furthermore, this model is implemented in a circuit that includes a bioelectrode and a thin-film transistor switch, showing the capability for circuit simulation with CPEs.…”
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7535
The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT
Published 2022-01-01“…The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. …”
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7536
Hybrid Intelligent Control Method to Improve the Frequency Support Capability of Wind Energy Conversion Systems
Published 2015-10-01“…The proposed method for a wind energy conversion system (WECS) is designed to have PMSG modeling and full-scale back-to-back insulated-gate bipolar transistor (IGBT) converters comprising the machine and grid side. …”
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7537
Design of High-Power High-Efficiency Broadband GaN HEMT Power Amplifier for S Band Applications using Load-Pull Technique
Published 2022-01-01“…The proposed structure is implemented using Cree GaN HEMT CGH40010 transistor. The high-power and high-efficiency performances over the broadband bandwidth are achieved using the load-pull technique. …”
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7538
Current-Mode First-Order Versatile Filter Using Translinear Current Conveyors with Controlled Current Gain
Published 2023-06-01“…To confirm the functionality and workability of new circuits, the proposed circuit and its application are simulated by the SPICE program using transistor model process parameters NR100N (NPN) and PR100N (PNP) of bipolar arrays ALA400-CBIC-R from AT&T.…”
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7539
A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness
Published 2023-10-01“…A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. …”
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7540
Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Published 2023-10-01“…In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed. …”
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