Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations by Muhammad Faizan, Kai Han, Xiaolei Wang, Muhammad Zain Yousaf

“…GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. …”
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Pressure-controlled magnetism in 2D molecular layers by Yulong Huang, Arjun K. Pathak, Jeng-Yuan Tsai, Clayton Rumsey, Mathew Ivill, Noah Kramer, Yong Hu, Martin Trebbin, Qimin Yan, Shenqiang Ren

“…Abstract Long-range magnetic ordering of two-dimensional crystals can be sensitive to interlayer coupling, enabling the effective control of interlayer magnetism towards voltage switching, spin filtering and transistor applications. With the discovery of two-dimensional atomically thin magnets, a good platform provides us to manipulate interlayer magnetism for the control of magnetic orders. …”
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Adaptive Charge-Compensation-Based Variable On-Time Control to Improve Input Current Distortion for CRM Boost PFC Converter by Xinjun Liu, Donglai Zhang, Wanyang Wang, Fanwu Zhang, Jun Yuan, Ningyu Liu

“…To verify the effectiveness of the proposed strategy, a 200 W prototype is built using the GaN HEMT transistor, where the THD is reduced to 1.4% at full load.…”
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Research and analysis of electromagnetic interference of a motor drive control system based on PMSM with SiC MOSFET for new energy electric vehicles by Chi Zhang, Chi Zhang, Chi Zhang, Chi Zhang, Chi Zhang, Jasronita Jasni, Jasronita Jasni, Mohd Amran Mohd Radzi, Mohd Amran Mohd Radzi, Norhafiz Azis, Norhafiz Azis, Xiangming He

“…In the context of new energy electric vehicles (NEEVs), the wide-bandgap semiconductor known as the silicon carbide–metal oxide–semiconductor field-effect transistor (SiC MOSFET) and the permanent magnet synchronous motor (PMSM) have emerged as advantageous sources. …”
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MOS-FET as a Current Sensor in Power Electronics Converters by Rok Pajer, Miro Milanoviĉ, Branko Premzel, Miran Rodiĉ

“…This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on UDS voltage measurement. …”
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Analysis of effects of MOSFET parasitic capacitance on non-synchronous buck converter electromagnetic emission by P. Rajeswari, V. Manikandan

“…This paper aims to extract the correlation between parasitic capacitances of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and its influence in Electromagnetic (EM) Emission level of non-synchronous buck converter. …”
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Enhancing the critical temperature of strained Niobium films by Joonyoung Choi, Young-Kyoung Kim, Chang-Duk Kim, Sooran Kim, Younjung Jo

“…The application of hydrostatic pressure compensated for the intrinsic strain of the film and increased its T _c , which could also be enhanced by increasing the hole concentration with an electric double-layer transistor. A liquid electrolyte should be used as a pressure medium for applying hydrostatic pressure to increase the T _c of correlated materials, where this increase results from changes in material structure and carrier concentration.…”
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A Broadband Enhanced Structure-Preserving Reduced-Order Interconnect Macromodeling Method for Large-Scale Equation Sets of Transient Interconnect Circuit Problems by Ning Wang, Huifang Wang, Shiyou Yang

“…The proposed method is validated by the numerical results on a transient problem of an insulated-gate bipolar transistor (IGBT)-based inverter busbar under different exciting conditions.…”
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Iron Loss Minimization Strategy for Predictive Torque Control of Induction Motor by Pavel Karlovsky, Ondrej Lipcak, Jan Bauer

“…However, the utilization of a VSI introduces additional voltage and current distortion, which leads to additional power losses in the machine’s magnetic circuit. Both the transistor switching frequency and the type of the inverter control determine the total harmonic distortion (THD) of the motor’s phase currents. …”
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Expanding Bias-instability of MEMS Silicon Oscillating Accelerometer Utilizing AC Polarization and Self-Compensation by Yang Zhao, Guoming Xia, Qin Shi, Anping Qiu

“…In contrast to the conventional DC (direct current) scheme, AC polarization breaks the trade-off between input transistor gate size and white noise floor of TIA, a relative low input loading capacitance can be implemented for low noise consideration. …”
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A Walsh-Based Arbitrary Waveform Generator for 5G Applications in 28nm FD-SOI CMOS Technology by Pierre Ferrer, Francois Rivet, Herve Lapuyade, Yann Deval

“…A high-level simulation study is performed as well as transistor-level simulation including post-layout and Monte-Carlo analysis. …”
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Microscopic contributions to the entropy production at all times: from nonequilibrium steady states to global thermalization by Ayaka Usui, Krzysztof Ptaszyński, Massimiliano Esposito, Philipp Strasberg

“…Based on exact integration of the Schrödinger equation, we numerically study microscopic contributions to the entropy production for the single electron transistor, a paradigmatic model describing a single Fermi level tunnel coupled to two baths of free fermions. …”
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Recent Progress of Switching Power Management for Triboelectric Nanogenerators by Han Zhou, Guoxu Liu, Jianhua Zeng, Yiming Dai, Weilin Zhou, Chongyong Xiao, Tianrui Dang, Wenbo Yu, Yuanfen Chen, Chi Zhang

“…Secondly, according to the switch types, the existing power management methods are summarized and divided into four categories: travel switch, voltage trigger switch, transistor switch of discrete components and integrated circuit switch. …”
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A High-Precision Circuit-Simulator-Compatible Model for Constant Phase Element Using Rational Function Approximation by Yangkun Hou, Taoming Guo, Manohar Bance, Chen Jiang

“…Furthermore, this model is implemented in a circuit that includes a bioelectrode and a thin-film transistor switch, showing the capability for circuit simulation with CPEs.…”
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The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT by Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo

“…The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. …”
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Hybrid Intelligent Control Method to Improve the Frequency Support Capability of Wind Energy Conversion Systems by Shin Young Heo, Mun Kyeom Kim, Jin Woo Choi

“…The proposed method for a wind energy conversion system (WECS) is designed to have PMSG modeling and full-scale back-to-back insulated-gate bipolar transistor (IGBT) converters comprising the machine and grid side. …”
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Design of High-Power High-Efficiency Broadband GaN HEMT Power Amplifier for S Band Applications using Load-Pull Technique by Ribate Mohamed, Mandry Rachid, Elabdellaoui Larbi, Aytouna Fouad, Benbrahim Mohammed

“…The proposed structure is implemented using Cree GaN HEMT CGH40010 transistor. The high-power and high-efficiency performances over the broadband bandwidth are achieved using the load-pull technique. …”
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Current-Mode First-Order Versatile Filter Using Translinear Current Conveyors with Controlled Current Gain by Montree Kumngern, Wirote Jongchanachavawat, Punnavich Phatsornsiri, Natapong Wongprommoon, Fabian Khateb, Tomasz Kulej

“…To confirm the functionality and workability of new circuits, the proposed circuit and its application are simulated by the SPICE program using transistor model process parameters NR100N (NPN) and PR100N (PNP) of bipolar arrays ALA400-CBIC-R from AT&T.…”
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A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness by Sujie Yin, Wei Cao, Xiarong Hu, Xinglai Ge, Dong Liu

“…A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. …”
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Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation by Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu

“…In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed. …”
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