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7541
Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters
Published 2023-03-01“…The current trend towards miniaturization of power conversion systems and, consequently, towards high power density solutions is speeding up the diffusion of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). GaN HEMT-based high power density converters must be properly managed, making the estimation of the thermal characteristics of these devices essential. …”
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7542
Spin skyrmion gaps as signatures of strong-coupling insulators in magic-angle twisted bilayer graphene
Published 2023-10-01“…Here, using a scanning single-electron transistor, we observe thermodynamic gaps at even integer moiré filling factors at low magnetic fields. …”
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Article -
7543
A GRAPHICAL APPROACH TO DESIGN AND OPTIMIZATION OF MOS AMPLIFIER
Published 2018-01-01“…The component values and transistor dimensions of a single stage amplifier are the only designable parameters which can be adjusted to achieve optimum performance. …”
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Article -
7544
Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature
Published 2021-01-01“…In this work, a TiO<sub>2</sub>-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed and implemented to address the well-known cross-sensitive nature of metal oxides. …”
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7545
Finite Element Modelling of Bandgap Engineered Graphene FET with the Application in Sensing Methanethiol Biomarker
Published 2021-01-01“…In this work, we have designed and simulated a graphene field effect transistor (GFET) with the purpose of developing a sensitive biosensor for methanethiol, a biomarker for bacterial infections. …”
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7546
A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components
Published 2022-12-01“…Compared to using the bipolar transistor model, this method avoids additional current input from the base electrode. …”
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Article -
7547
Ultrathin thermoresponsive self-folding 3D graphene
Published 2018“…We highlight applicability by encapsulating live cells and creating nonlinear resistor and creased transistor devices.…”
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Article -
7548
Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits
Published 2010“…For the first time, we demonstrate control of organic thinfilm transistor's (OTFT) threshold voltage (V [subscript T]) by modifying the gate work function. …”
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Article -
7549
30-nm InAs PHEMTs With f[subscript T] = 644 GHz and f[subscript max] = 681 GHz
Published 2012“…This is also the first demonstration of simultaneous fT and f[subscript max] higher than 640 GHz in any transistor technology.…”
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Article -
7550
Surface analysis of semiconductors and simulation using Python
Published 2022“…GaN polar and N polar High Electron Mobility Transistor (HEMT ) are two types of thin film growth structures used in this work to study reflection diffraction patterns. …”
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Final Year Project (FYP) -
7551
Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application
Published 2008“…Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance against repetitive polarization switching. …”
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Thesis -
7552
Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device
Published 2016“…In the fabricated test vehicle, the small heater is used to represent one unit of transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the performance. …”
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Journal Article -
7553
A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression
Published 2016“…With the unified Ef model, a surface-potential (φs) based drain-current (Ids) model for the metal-insulator-semiconductor (MIS) high electron-mobility transistor (HEMT) is developed. Nonlinear source/drain access region resistances ( Rs and Rd) can also be modeled via a subcircuit, including an empirical Rs model for capturing the current-collapse effect. …”
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Journal Article -
7554
Interface strain study of thin Lu2O3/Si using HRBS
Published 2013“…Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. …”
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Journal Article -
7555
Jitter analysis of polyphase filter-based multiphase clock in frequency multiplier
Published 2013“…The overall comparison has shown excellent agreement among prediction results from theory and realistic simulation results from a combination of all the transistor-level circuits in conjunction with the proposed behavioral model. …”
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Journal Article -
7556
Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)
Published 2019“…The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. …”
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Article -
7557
An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances
Published 2018“…The enlarged second harmonic voltage extends the flat span in which the impulse sensitivity function (ISF) is minimum, and the amplified gate voltage swing reduces the current commutation time, thereby lowering the - g m transistor's noise-to-phase noise (PN) conversion. Prototyped in 65-nm CMOS, the class- F -1 oscillator at 4 GHz exhibits a PN of -144.8 dBc/Hz at a 10-MHz offset, while offering a tuning range of 3.5-4.5 GHz. …”
Article -
7558
High-k gate dielectric nano-FET leakage current analysis
Published 2021“…Instead of reducing the size of the transistor, it can make the changes to the parameter, such as the channel length, oxide thickness, and channel width. …”
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Proceedings -
7559
Electrical appliances protection using auto cut under voltage and over voltage tripping mechanism
Published 2020“…In this study, an auto-cut circuit has been designed using relay, transistor, operational amplifier and other discrete component and a lamp was used as a load to confirm the circuit successfully operated. …”
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Article -
7560
An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH3 gas sensor applications
Published 2014“…A mathematical model is proposed with a clear purpose to acquire an analytical understanding of the field-effect-transistor (FET) based gas detection mechanism. The conductance change in the CNT/graphene channel resulting from the chemical reaction between the gas and channel surface molecules is emphasized. …”
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Article