Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters by Adrian Valeriu Pirosca, Marcello Vecchio, Santi Agatino Rizzo, Francesco Iannuzzo

“…The current trend towards miniaturization of power conversion systems and, consequently, towards high power density solutions is speeding up the diffusion of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). GaN HEMT-based high power density converters must be properly managed, making the estimation of the thermal characteristics of these devices essential. …”
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Spin skyrmion gaps as signatures of strong-coupling insulators in magic-angle twisted bilayer graphene by Jiachen Yu, Benjamin A. Foutty, Yves H. Kwan, Mark E. Barber, Kenji Watanabe, Takashi Taniguchi, Zhi-Xun Shen, Siddharth A. Parameswaran, Benjamin E. Feldman

“…Here, using a scanning single-electron transistor, we observe thermodynamic gaps at even integer moiré filling factors at low magnetic fields. …”
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A GRAPHICAL APPROACH TO DESIGN AND OPTIMIZATION OF MOS AMPLIFIER by PAROMITA BHATTCHARJEE, ABIR J. MONDAL, ALAK MAJUMDER

“…The component values and transistor dimensions of a single stage amplifier are the only designable parameters which can be adjusted to achieve optimum performance. …”
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Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature by Md Ashfaque Hossain Khan, Ratan Debnath, Abhishek Motayed, Mulpuri V. Rao

“…In this work, a TiO₂-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed and implemented to address the well-known cross-sensitive nature of metal oxides. …”
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Finite Element Modelling of Bandgap Engineered Graphene FET with the Application in Sensing Methanethiol Biomarker by Paramjot Singh, Parsoua Abedini Sohi, Mojtaba Kahrizi

“…In this work, we have designed and simulated a graphene field effect transistor (GFET) with the purpose of developing a sensitive biosensor for methanethiol, a biomarker for bacterial infections. …”
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A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components by Kewei Wang, Xinyi Zhang, Bo Li, Duoli Li, Fazhan Zhao, Jianhui Bu, Zhengsheng Han

“…Compared to using the bipolar transistor model, this method avoids additional current input from the base electrode. …”
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Ultrathin thermoresponsive self-folding 3D graphene by Xu, Weinan, Kwag, Hye Rin, Ma, Qinli, Sarkar, Anjishnu, Gracias, David H., Qin, Zhao, Chen, Chun-Teh, Buehler, Markus J

“…We highlight applicability by encapsulating live cells and creating nonlinear resistor and creased transistor devices.…”
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Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits by Sodini, Charles G., Nausieda, Ivan A., Ryu, Kevin K., He, David Da, Akinwande, Akintunde Ibitayo, Bulovic, Vladimir

“…For the first time, we demonstrate control of organic thinfilm transistor's (OTFT) threshold voltage (V [subscript T]) by modifying the gate work function. …”
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30-nm InAs PHEMTs With f[subscript T] = 644 GHz and f[subscript max] = 681 GHz by Kim, Dae-Hyun, del Alamo, Jesus A.

“…This is also the first demonstration of simultaneous fT and f[subscript max] higher than 640 GHz in any transistor technology.…”
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Surface analysis of semiconductors and simulation using Python by Menon, Krishnanunni

“…GaN polar and N polar High Electron Mobility Transistor (HEMT ) are two types of thin film growth structures used in this work to study reflection diffraction patterns. …”
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Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application by Li, Yibin

“…Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance against repetitive polarization switching. …”
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Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device by Han, Yong, Lau, Boon Long, Zhang, Xiaowu, Leong, Yoke Choy, Choo, Kok Fah

“…In the fabricated test vehicle, the small heater is used to represent one unit of transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the performance. …”
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A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression by Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing

“…With the unified Ef model, a surface-potential (φs) based drain-current (Ids) model for the metal-insulator-semiconductor (MIS) high electron-mobility transistor (HEMT) is developed. Nonlinear source/drain access region resistances ( Rs and Rd) can also be modeled via a subcircuit, including an empirical Rs model for capturing the current-collapse effect. …”
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Interface strain study of thin Lu2O3/Si using HRBS by Chan, T. K., Darmawan, P., Ho, C. S., Malar, P., Osipowicz, T., Lee, Pooi See

“…Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. …”
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Jitter analysis of polyphase filter-based multiphase clock in frequency multiplier by Yin, Jee Khoi, Chan, Pak Kwong

“…The overall comparison has shown excellent agreement among prediction results from theory and realistic simulation results from a combination of all the transistor-level circuits in conjunction with the proposed behavioral model. …”
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Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) by Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Norsuzailina Mohamed Sutan, Zaidi Embong, Suhana Mohamed Sultan, Muhammad Kashif, Marini Sawawi, Hasanah, Lilik, Rohana Sapawi, Kuryati Kipli, Abdul Rahman Kram, Nazreen Junaidi

“…The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. …”
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An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances by Lim, Chee Cheow, Ramiah, Harikrishnan, Yin, Jun, Mak, Pui-In, Martins, Rui Paulo

“…The enlarged second harmonic voltage extends the flat span in which the impulse sensitivity function (ISF) is minimum, and the amplified gate voltage swing reduces the current commutation time, thereby lowering the - g m transistor's noise-to-phase noise (PN) conversion. Prototyped in 65-nm CMOS, the class- F -1 oscillator at 4 GHz exhibits a PN of -144.8 dBc/Hz at a 10-MHz offset, while offering a tuning range of 3.5-4.5 GHz. …”

High-k gate dielectric nano-FET leakage current analysis by Bunseng, Chan, Charlie Soh, Kang, Eng Siew, Hui, Seng Kheong, Lim, Wei Jer, Ismail Saad, Nurmin Bolong

“…Instead of reducing the size of the transistor, it can make the changes to the parameter, such as the channel length, oxide thickness, and channel width. …”
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Electrical appliances protection using auto cut under voltage and over voltage tripping mechanism by Abu Bakar, Nur Hijrah, Mohd Asry, Anis Maisarah, Mustafa -, Farahiyah

“…In this study, an auto-cut circuit has been designed using relay, transistor, operational amplifier and other discrete component and a lamp was used as a load to confirm the circuit successfully operated. …”
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An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH3 gas sensor applications by Akbari, Elnaz, Arora, Vijay Kumar, Enzevaee, Aria, Ahmadi, Mohammad Taghi, Saeidmanesh, Mehdi, Khaledian, Mohsen, Karimi, Hediyeh, Yusof, Rubiya

“…A mathematical model is proposed with a clear purpose to acquire an analytical understanding of the field-effect-transistor (FET) based gas detection mechanism. The conductance change in the CNT/graphene channel resulting from the chemical reaction between the gas and channel surface molecules is emphasized. …”
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