Analytical calculation of sensing parameters on carbon nanotube based gas sensors by Akbari, Elnaz, Buntat, Zolkafle, Ahmad, Mohd. Hafizi, Enzevaee, Aria, Yousof, Rubiyah, Iqbal, Syed Muhammad Zafar, Ahmadi, Mohammad Taghi, Sidik, Muhammad Abu Bakar, Karimi, Hediyeh

“…In this research, a model for a Field Effect Transistor (FET)-based structure has been developed as a platform for a gas detection sensor in which the CNT conductance change resulting from the chemical reaction between NH3 and CNT has been employed to model the sensing mechanism with proposed sensing parameters. …”
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Effect of addition Pb content on lead titanate thin films for MIM capacitor by Zainal, Nurbaya, Mahmood, Mohamad Rusop

“…Lead titanate (PbTiO3) has been precisely studied on the films preparation due to its unique perovskite structure having ferroelectric behaviour with high permittivity factor for complex storage applications such as capacitor, transistor, and ferroelectric random access memory. …”
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Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3) by Sahari, Siti Kudnie, Nik Zaini Fathi, Nik Amni Fathi, Hamzah, Azrul Azlan, Mohamed Sutan, Norsuzailina, Embong, Zaidi, Mohamed Sultan, Suhana, Kashif, Muhammad, Sawawi, Marini, Hasanah, Lilik, Sapawi, Rohana, Kipli, Kuryati, Kram, Abdul Rahman, Junaidi, Nazreen

“…The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. …”
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PENGARUH VIRTUALISASI LABORATORIUM BERBASIS ELECTRONICS WORKBENCH (EWB) PADA MATA KULIAH ELEKTRONIKA DASAR UNSRIT by Meidy Atina Kuron, Arnold Umboh

“…Hipotesis penelitian dianalisis dengan bantuan aplikasi SPSS untuk memperoleh t hitung dengan taraf kepercayaan 95% dimana t hitung > t tabel yaitu 19,126 > 2,055 dan berdasarkan nilai signifikansi yaitu Sig. (2-tailed) 0,000 < 0,05 dapat disimpulkan terdapat pengaruh yang signifikan virtualisasi laboratorium berbasis EWB terhadap hasil belajar mahasiswa Teknik Informatika UNSRIT Semester II materi Elektronika Dasar materi penguat transistor. Selanjutnya dilakukan pengujian N-Gain score untuk melihat efektivitas penggunaan virtualisasi laboratorium berbasis EWB dalam meningkatkan hasil belajar mahasiswa Teknik Informatika UNSRIT dengan hasil 0,40 termasuk pada kategori sedang. …”
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Fuzzy logic controlled solar module for driving three-phase induction motor by Chan, Sooi Tat

“…Fuzzy logic controller to be used for Maximum Power Point Tracking (MPPT) in the non-linear system with fuzzy rules to control Pulse-Width Modulation (PWM) for switching Metal Oxide Semiconductor Fast Emitted Transistor (MOSFET). DC boost converter used to boost up photovoltaic voltage to desired output for supply voltage source inverter which controlled by three-phase PWM generated by microcontroller. …”
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Development of single phase PWM inverter for UPS application by Yaakob, Mohammad Ariff

“…In this project, Metal Oxide Field Effect Transistor (MOSFET) is used as switch in the full bridge inverter circuit design. …”
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BİRİNCİ DERECE A SINIFI LOGARİTMİK ORTAM SÜZGECİNİN BLOK MODELLEME İLE TASARIMI VE GERÇEKLEŞTİRİLMESİ by Abdullah T.TOLA, Remzi ARSLANALP, Mehmet ÜNAL, Şaziye SURAV YILMAZ

“…Bu tür süzgeçlerin transistör uyumsuzluklarına hassasiyeti ve tümdevre teknolojisine ihtiyaç duyduğu bilinmesine karşın, tasarlanan süzgecin laboratuvardaki gerçeklenmesi tatmin edici sonuç verdiği gözlemlenmiştir.…”
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A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques by Boyang Shan, Haipeng Fu, Jian Wang

“…When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. …”
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Design Consideration of ZVS Single-Ended Parallel Resonant DC-DC Converter, Based on Application of Optimization Techniques by Nikolay Hinov, Bogdan Gilev

“…The paper presents the design of a single-ended transistor zero-voltage switch (ZVS) parallel resonant DC-DC converter. …”
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Development of nanosecond spike pulse power supply for electrochemical micromachining by Chuanjun Zhao, Qingzhi Zou, Xiaoguang Ren, Lizhong Xu

“…However, the commonly used chopper circuit topology of pulse power supplies is limited by the maximum switching frequency of the field-effect transistor. To address this problem, this paper proposes a nanosecond pulse electrochemical micromachining power supply based on a differential circuit. …”
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A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance by Jaeyeop Na, Kwangsoo Kim

“…This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with a built-in MOS channel diode. …”
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Design of Ternary Content-Addressable Memories with Dynamically Power-gated Storage Cells Using FinFETs by Meng-Chou Chang, Kai-Lun He, Yu-Chieh Wang

“…An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count. In this paper, we present two novel dynamically power-gated FinFET TCAM cells, called DPG-17T and DPG-16T, which power-gate the prefix data storage unit when storing a ‘don't care’ value. …”
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DNA Polymerases Drive DNA Sequencing-by-Synthesis Technologies: Both Past and Present by Cheng-Yao eChen

“…Furthermore, ⱷ29 enzyme has also been utilized in emerging DNA sequencing technologies including nanopore-, and protein-transistor-based sequencing. DNA polymerase is, and will continue to be, a crucial component of sequencing technologies.…”
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Low-Power Analog Processing for Sensing Applications: Low-Frequency Harmonic Signal Classification by Sina Balkir, Michael W. Hoffman, Daniel J. White, Peter E. William

“…Design of a preliminary transistor-level integrator circuit in a 0:µm complementary metal-oxide-silicon (CMOS) integrated circuit process showed the ability to use online self-calibration to reduce fabrication errors to a sufficiently low level. …”
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Electrochemical Biosensors - Sensor Principles and Architectures by Erik Reimhult, Janos Vörös, Robert MacKenzie, Dorothee Grieshaber

“…In this review, the most commontraditional techniques, such as cyclic voltammetry, chronoamperometry, chronopotentiometry,impedance spectroscopy, and various field-effect transistor based methods are presented alongwith selected promising novel approaches, such as nanowire or magnetic nanoparticle-basedbiosensing. …”
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<b>The modeling and simulation of thermal based modified solid oxide fuel cell (SOFC) for grid-connected systems by Ayetül Gelen, Tankut Yalcinoz

“…The voltage-source inverter with six Insulated Gate Bipolar Transistor (IGBT) switches inverts the DC voltage that comes from the converter into a sinusoidal voltage synchronized with the grid. …”
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Investigation of temperature variations on a Class-E inverter and proposing a compensation circuit to prevent harmful effects on biomedical implants by Mehrnaz Khodadoost, Mohsen Hayati, Hamed Abbasi

“…In the analysis of the Class-E inverter, the voltage-dependent non-linearities of Cds, Cgd, and RON as well as temperature-dependent non-linearity of RON of the transistor are considered simultaneously. Close agreement of theoretical, simulated and experimental results confirmed the validity of the proposed approach in taking into account these nonlinear effects. …”
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Solid State Gas Sensor Research in Germany – a Status Report by Udo Weimar, Nicolae Barsan, Ulrich Guth, Kathy Sahner, Maximilian Fleischer, Ralf Moos

“…Therefore, one tries to measure directly the Fermi level position either by measuring the gas-dependent Seebeck coefficient at high temperatures or at room temperature by applying a modified miniaturized Kelvin probe method, where surface adsorption-based work function changes drive the drain-source current of a field effect transistor.…”
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Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process by Byoung-Gue Min, Jong-Min Lee, Hyung Sup Yoon, Woo-Jin Chang, Jong-Yul Park, Dong Min Kang, Sung-Jae Chang, Hyun-Wook Jung

“…We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. …”
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Enhancement of charge transfer in thermally-expanded and strain-stabilized TIPS-pentacene thin films by Yang Li, Jing Wan, Detlef-M. Smilgies, Richards Miller, Randall L. Headrick

“…These effects are also correlated with the sign and magnitude of electron and hole charge transfer integrals t_{e} and t_{h} calculated from density functional theory that provide additional evidence for charge transfer mediated coupling, as well as insight into the origin of an experimentally observed enhancement of the field-effect transistor mobility in strain-stabilized thin films. …”
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