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7601
Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate
Published 2023-05-01“…The inversion channel mobility of a metal-oxide-semiconductor field effect transistor (MOSFET) was decreased via a high interface state density and the coulomb-scattering mechanisms of the carriers. …”
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Article -
7602
BİRİNCİ DERECE A SINIFI LOGARİTMİK ORTAM SÜZGECİNİN BLOK MODELLEME İLE TASARIMI VE GERÇEKLEŞTİRİLMESİ
Published 2007-02-01“…Bu tür süzgeçlerin transistör uyumsuzluklarına hassasiyeti ve tümdevre teknolojisine ihtiyaç duyduğu bilinmesine karşın, tasarlanan süzgecin laboratuvardaki gerçeklenmesi tatmin edici sonuç verdiği gözlemlenmiştir.…”
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Article -
7603
Introducción a Physics and Philosophy de Werner Heisenberg
Published 2007-07-01“…La mecánica cuántica es una de las ramas principales de la Física y uno de los más grandes avances del siglo XX en el conocimiento humano. u aplicación ha hecho posible el descubrimiento y desarrollo de muchas tecnologías, como por ejemplo los transistores. …”
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Article -
7604
RANCANG BANGUN PROTOTIPE DETEKTOR HUJAN SEDERHANA BERBASIS RAINDROP SENSOR MENGGUNAKAN BUZZER DAN LED
Published 2021-12-01“…Alat detektor hujan ini terdiri atas komponen-komponen elektronika, yaitu raindrop sensor, buzzer, LED, transistor dan sakelar. Selanjutnya, dilakukan pengujian alat secara keseluruhan untuk melihat apakah alat berfungsi sesuai dengan tujuan. …”
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Article -
7605
PEMODELAN SISTEM AUDIO SECARA WIRELESS TRANSMITTER MENGGUNAKAN LASER POINTER
Published 2016-11-01“…Sinyal suara yang sudah dimodulasi dengan frekuensi carrier dikirim ke laser melalui Transistor saklar agar arus yang masuk ke laser besar sehingga laser dapat menyala dengan maksimal. …”
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Article -
7606
Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications
Published 2023-10-01“…Abstract A vertical tunneling field effect transistor composed of a doping-less tunneling heterojunction and an n+-drain is presented in this paper. …”
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Article -
7607
A new design approach for dual-band power amplifiers based on dual-band HCC and bandpass filter
Published 2024-01-01“…To ensure compatibility with the transistor, a compensator line has been integrated. …”
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Article -
7608
A 13-bit 3-MS/s Asynchronous SAR ADC with a Passive Resistor Based Loop Delay Circuit
Published 2019-02-01“…The resistance controlled delay cell is based on a passive resistor instead of a MOS transistor using a triode region to avoid the nonlinear delay characteristic of active devices. …”
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Article -
7609
Model for Optimal Power Coefficient Tracking and Loss Reduction of the Wind Turbine Systems
Published 2022-06-01“…The results also revealed that, within the lower wind regime, windage, hysteresis, and eddy current losses dominated, while during higher wind regimes, the copper, stray load, and insulator gate bipolar transistor (IGBT) losses gained high values. The developed model was applied to a 20 kW indirect drive wind turbine installed in Gwadar city in Pakistan. …”
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Article -
7610
Investigation of Ultra-Low Power CMOS GHz Circulator
Published 2022“…To reduce power consumption below the cooling budget in a cryogenic regime while maintaining losses and isolation performances, I took three approaches -1) decreasing the modulation frequency, 2) increasing the transistor size, and 3) using a more advanced technology node. …”
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Thesis -
7611
A CMOS precision voltage reference
Published 2022“…In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transistor (BJT), relatively lower power consumption is obtained in the design whilst offering comparable precision offered by BJT counterpart. …”
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Thesis-Master by Coursework -
7612
Investigation of power factor correction on single phase AC/DC converters
Published 2009“…To obtain the variable dc output voltage, the duty ratio of the transistor switch was controlled by constructing small switching control circuit. …”
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Final Year Project (FYP) -
7613
Ultrasensitive detection of adipocytokines with CMOS : compatible silicon nanowire array
Published 2010“…Silicon nanowire (SiNW) configured as field-effect transistor (FET) has emerged as a promising biosensor for quantification of molecules at low concentration levels pivotal in many areas including molecular biology research, early medical diagnosis, drug screening, etc. …”
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Final Year Project (FYP) -
7614
Error-tolerant multiplier for high speed application
Published 2011“…With the advent of hand held computing devices that require functionality rivaling the desktop, low-power and high-performance systems have become very important. The transistor network contributes mostly to the overall power dissipation and is becoming a major obstacle in implementing those systems. …”
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Thesis -
7615
Analysis and design of on-chip antenna and its switch in 65nm CMOS
Published 2013“…Finally, a switchable balun is design for integration T/R switch with on-chip dipole. Transistor in CMOS is modeled in EM simulator HFSS and T/R switch with on-chip dipole is designed and optimized.…”
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Thesis -
7616
PEMBUATAN ALAT PENGHASIL OZON SEBAGAI PEMBUNUH MIKROORGANISME DAN PENGIKAT UNSUR BESI DI DALAM AIR
Published 2010“…Transformator flyback memerlukan arus yang tinggi untuk dapat bekerja, sehingga transistor 2N3005 digunakan sebagai penguat arus pada rangkaian penghasil ozon. …”
Article -
7617
Nano-ballistic saturation Velocity modelling to enhance circuit performances of Nano-Mosfet
Published 2010“…Detailed explanation of low-dimensional energy spectrums and carrier statistics for quasi 3D, 20 and 10 that invoked the quantum effects and the Fermi energy distributions in non-degenerate and degenerate region essential for nanoscale transistor was found respectively. The ballistic intrinsic velocity for Q3D, Q20 and QID system has been derived for non-degenerate and degenerate regime and analyzed its dependence towards temperature and carrier concentrations. …”
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Research Report -
7618
Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures
Published 1998“…Metal Oxide Semiconductor(MOS), and T type Metal Oxide Semiconductor Field Effect Transistor (TMOS) are due to Electrostatic Discharge(ESD) and Electrical Overseers(EOS). …”
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Thesis -
7619
Development of 6kw Variable Power Supply Leading to Knowledge Extraction for Power Electronic Design Aid System Database
Published 1999“…Insulated Gate Bipolar Transistor (lGBT) is used as a power switch protected by snubber circuit. …”
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Thesis -
7620
Development of a Single-Phase PWM-Based Dc-To-Dc Converter for Electric Bicycle
Published 2000“…The single-phase converter used pulse width modulation (PWM) switching with an Insulated Gate Bipolar Transistor (IGBT) as power device. The speed of the motors was controlled through the duty cycle of the PWM signal. …”
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Thesis