pH Sensing Characteristics of CuS/ ZnO Thin Film Implemented as EGFET by Sabah, Fayroz A., Ahmed, Naser M.

“…CuS nanoscale thin films were deposited on various substrates using various methods of deposition; recently CuS thin films were used as extended gate field effect transistor (EGFET) and implemented as a pH sensor . …”
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pH Sensing Characteristics of CuS/ZnO Thin Film Implemented as EGFET by Sabah, Fayroz A., Ahmed, Naser M., Hassan, Z.

“…CuS nanoscale thin films were deposited on various substrates using various methods of deposition; recently CuS thin films were used as extended gate field effect transistor (EGFET) and implemented as a pH sensor. In this work, CuS thin film was deposited on ZnO layer using spray pyrolysis deposition (SPD). …”
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Design And Analysis Of A CMOS Image Sensor by Halim, Nuranisah

“…This chip includes a set of pixel architectures where different parameters have been modified, layout of active diffusion and threshold voltage of the source follower transistor. This CMOS imager only has 1 pixel, but that can be improved by changing the scan logic because the size of this pixel array is a metric that gives an indication of the performance image sensor where it is expressed as a megapixel. …”
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130 nm low power CMOS analog multiplier by Abu Naim, Ahmad Safuan, Ruslan, Siti Hawa

“…A four quadrant technique is applied in the design. The scaling of transistor will help in reducing the size of the analog multiplier, and the proposed circuit architecture has produced a compact multiplier. …”
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Improved characteristics of radio frequency interdigital capacitor by Lim, Yun Rou

“…Some circuits that would have to be done with GaAs monolithic microwave integrated circuits (MMICs), for instance, are now possible in CMOS. While the transistor speed has been improving significantly, fuller integration of RF integrated circuits (RFICs) is often retarded by the absence of high quality, high rangebility and efficient on-chip passive components. …”
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Modeling and simulation of graphene three branch junction using verilog-A by Chin, Ee Mei

“…The main objective of this project is to investigate other device model consist of graphene field effect transistor (G-FET). The feasibility of implementing of embedded Verilog-A models to simulate TBJ was assessed. …”
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Escherichia coli bacteria detection by using graphene-based biosensor by Akbari, Elnaz, Buntat, Zolkafle, Afroozeh, Abdolkarim, Zeinalinezhad, Alireza, Nikoukar, Ali

“…A novel model employing a field-effect transistor structure using graphene is proposed and the current-voltage (I-V) characteristics of graphene are employed to model the sensing mechanism. …”

Low power cmos potentiometric circuit design for label-free DNA detection by Khalid, Muhammad Harris

“…The aim of this work is to develop an on-chip Complementary Metal Oxide Semiconductor (CMOS) biosensor circuit based on the charge-modulated field effect transistor (CMFET) for a label-free deoxyribonucleic acid (DNA) detection. …”
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Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET) by M. N., Zul Atfyi Fauzan, Saad, Ismail, Ismail, Razali

“…Characterization of a metal-oxide-semiconductor field effect transistor (MOSFET)incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE) was demonstrated by using numerical simulation. …”
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Quantum capacitance model for graphene FET-based gas sensor by Pourasl, A. H., Ariffin, S. H., Ahmadi, M., Gharaei, Niayesh, Rashid, R., Ismail, R.

“…In this paper, a new quantum capacitance model for the gas sensor employing the graphene field effect transistor platform is proposed. Hence, a general approach using the Tight-binding approximation based on the nearest neighbor incorporating Schrödinger equation is developed. …”

Effect of solution pH and adsorbent concentration on the sensing parameters of TGN-based electrochemical sensor by Rahmani, Meisam, Ghafoorifard, Hassan, Afrang, Saeid, Ahmadi, Mohammad Taghi, Rahmani, Komeil, Ismail, Razali

“…The response of trilayer graphene nanoribbon (TGN)-based ion-sensitive field-effect transistor (ISFET) to different pH solutions and adsorption effect on the sensing parameters are analytically studied in this research. …”

CNTFET based voltage mode MISO active only biquadratic filter for Multi-GHz frequency applications by Masud, Muhammad I., A’ain, Abu Khari, Khan, Iqbal A., Shaikh-Husin, Nasir

“…A new voltage mode, carbon nanotube field-effect transistor (CNTFET) based multiple input single output active only biquadratic filter (AOBF), is presented. …”

Mixed convection boundary layer flow on a horizontal circular cylinder in a nanofluid with viscous dissipation effect by Muhammad Khairul Anuar, Mohamed, Norhafizah, Md Sarif, Nor Aida Zuraimi, Md Noar, Mohd Zuki, Salleh, Anuar, Mohd Ishak

“…It is worth mentioning that the results in this paper is important especially in understanding the nanofluid parameters behaviour as cooling medium in such applications like transformer liquid submersion system, power supply unit in supercomputer and liquid cooling for electronic components like capacitor and transistor.…”
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Adapting the GACT-X Aligner to Accelerate Minimap2 in an FPGA Cloud Instance by Carolina Teng, Renan Weege Achjian, Jiang Chau Wang, Fernando Josepetti Fonseca

“…This issue is amplified by the exponential growth of genetic data generation and by the slowdown of transistor technology progress, illustrated by Moore’s Law. …”
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Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment by Yuxuan Zhang, Mingyuan Liu, Hyo-Young Yeom, Byung-Hyuk Jun, Jinwook Baek, Kwangsoo No, Han-Wook Song, Sunghwan Lee

“…The enhancement of electrical properties of oCVD PT is directly related to the improvement of the thin film transistor performance such as drain current on/off ratio, ∼10 ^3 and field effect mobility, 2.25 × 10 ^−2 cm ^2 Vs ^−1 , compared to untreated counterparts of 10 ^2 and 0.09 × 10 ^−2 cm Vs ^−1 , respectively.…”
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Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM by Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki

“…Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown voltage. …”
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SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance by Hengyu Yu, Limeng Shi, Monikuntala Bhattacharya, Michael Jin, Jiashu Qian, Anant K. Agarwal

“…A novel 4H-SiC trench metal-oxide-semiconductor field-effect transistor (TMOS) with depletion-mode pMOS (D-pMOS) is proposed and investigated via TCAD simulation. …”
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Voltage over‐scaling CNT‐based 8‐bit multiplier by high‐efficient GDI‐based counters by Ayoub Sadeghi, Nabiollah Shiri, Mahmood Rafiee, Abdolreza Darabi, Ebrahim Abiri

“…To prevent the threshold voltage (Vth) drop in the suggested GDI‐based circuits, carbon nanotube field‐effect transistor (CNTFET) technology is used. In the counters, the chirality vector and tubes of the CNTFETs are properly adjusted to attain full‐swing outputs with high driving capability. …”
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Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type‐I Heterojunction by DFT and the Landauer Approach by Oscar A. López‐Galán, Israel Perez, John Nogan, Manuel Ramos

“…Lastly, using the Landauer approach and ballistic transport, the proposed heterojunctions can be modeled as a channel material for a typical one‐gate transistor configuration predicting subthreshold values of ≈60 mV dec−1 and field–effect mobilities of ≈160 cm−2 V−1 s−1.…”
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Reactive voltage control strategy of distribution network considering the reliability of photovoltaic power supply by Liang Jifeng, Li Tiecheng, Zhang Rui, Dong Liangyuan

“…Consequently, the temperature rise significantly impacts the maximum junction temperature of the Insulated Gate Bipolar Transistor (IGBT), leading to fluctuations in the junction temperature. …”
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