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7661
On the Effectiveness of Impedance-Based Fingerprint Presentation Attack Detection
Published 2021-08-01“…In this work, a fingerprint capture device based on thin film transistor (TFT) technology has been modified to additionally acquire the impedances of the presented fingers. …”
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7662
Micromechanical mode-localized electric current sensor
Published 2022-04-01“…The mode-localized electric current sensor provides a new approach for measuring sub-microampere currents for applications in nuclear physics, including for photocurrent signals and transistor leakage currents. It could also become a key component of a portable mode-localized multimeter when combined with a mode-localized voltmeter. …”
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7663
Energy Efficient Artificial Olfactory System with Integrated Sensing and Computing Capabilities for Food Spoilage Detection
Published 2023-10-01“…The AOS efficiently integrates an array of sensing units (merged field effect transistor (FET)‐type gas sensors and amplifier circuits) and an AND‐type nonvolatile memory (NVM) array. …”
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7664
A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement
Published 2021-01-01“…It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. …”
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7665
CVD growth of large-area monolayer WS2 film on sapphire through tuning substrate environment and its application for high-sensitive strain sensor
Published 2023-02-01“…By carefully optimizing the gas velocity, temperature, and height of substrate away from the tube bottom, a large-scale continues monolayered WS2 film was achieved. Field-effect transistor based on the as-grown monolayer WS2 showed a mobility of 3.76 cm2V−1 s−1 and ON/OFF ratio of 106. …”
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7666
Effect of Solder Layer Void Damage on the Temperature of IGBT Modules
Published 2023-06-01“…In this study, a 3D model of IGBT (Insulated Gate Bipolar Transistor) packaging was built by DesignModeler. Based on ANSYS Workbench, the influence of void size, location, solder layer type, and thickness on the temperature distribution of the IGBT module was simulated. …”
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7667
Power Loss Analysis and a Control Strategy of an Active Cell Balancing System Based on a Bidirectional Flyback Converter
Published 2020-06-01“…To reduce the structural complexity, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) array commonly used in balancing system is replaced with the photovoltaic Metal-Oxide-Semiconductor (photoMOS) array. …”
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7668
Online correction method of IGBT lifetime evaluation based on bonding wire failure monitoring
Published 2023-02-01“…Abstract Insulated gate bipolar transistor (IGBT) modules are widely used as power switching devices. …”
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7669
Design of ± 535 kV hybrid high voltage direct current (HVDC) circuit breaker
Published 2022-10-01“…Simulation results indicate that an insulated gate bipolar transistor (IGBT) in the main branch will withstand the highest electrical stress (3305 V/2200 A) and the IGBT in the transferring branch will withstand the highest voltage stress (3327 V). …”
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7670
Endurance of 2 Mbit Based BEOL Integrated ReRAM
Published 2022-01-01“…It is proposed, that an insufficient voltage dropping over the cell due to an unfavorable combination of cell- and transistor resistances is responsible for stuck-at-LRS bits. …”
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7671
An ISFET Microarray Sensor System for Detecting the DNA Base Pairing
Published 2021-06-01“…In this study, a large-scale ion-sensitive field-effect transistor (ISFET) array chip with more than 13 million sensitive units is successfully designed for detecting the DNA base pairing. …”
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7672
A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications
Published 2021-08-01“…Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. …”
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7673
A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET
Published 2023-12-01“…Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry. …”
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7674
A Novel AlGaN/Si<sub>3</sub>N<sub>4</sub> Compound Buffer Layer HEMT with Improved Breakdown Performances
Published 2022-03-01“…In this article, an AlGaN and Si<sub>3</sub>N<sub>4</sub> compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. …”
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7675
Nonequilibrium thermodynamics in the strong coupling and non-Markovian regime based on a reaction coordinate mapping
Published 2016-01-01“…Furthermore, we show for a single electron transistor coupled to vibrations that our method allows one to justify master equations derived in a polaron transformed reference frame.…”
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7676
UWB-MMIC Matrix Distributed Low Noise Amplifier
Published 2020-12-01“…In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S<sub>21</sub>, low reverse gain S<sub>12</sub>, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is presented. This Low Noise Amplifier (LNA) was designed with the Advanced Design System simulator in distributed matrix architecture. …”
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7677
Readout Integrated Circuit for Small-Sized and Low-Power Gas Sensor Based on HEMT Device
Published 2021-08-01“…This paper presents a small-sized, low-power gas sensor system combining a high-electron-mobility transistor (HEMT) device and readout integrated circuit (ROIC). …”
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7678
A 0.78–0.91–THz Wideband Frequency Tripler With Harmonic-Matched Bias Network
Published 2023-01-01“…Considering potential inaccuracy of the transistor model at the submillimeter-wave frequencies, a simple one-stage common-emitter topology is adopted for the wideband and stable operation. …”
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7679
Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning
Published 2023-11-01“…The chip featured three key functional layers: the first was Si complementary metal-oxide-semiconductor (CMOS) for control logic; the second was computing-in-memory (CIM) layer with HfAlOx-based analog RRAM array to implement neural networks for feature extractions; the third was on-chip buffer and ternary content-addressable memory (TCAM) array for template storing and matching, based on Ta2O5-based binary RRAM and carbon nanotube field-effect transistor (CNTFET). Extensive structural analysis along with array-level electrical measurements and functional demonstrations on the CIM and TCAM arrays was performed. …”
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7680
Fiducial Lower Confidence Limit of Reliability for a Power Distribution System
Published 2021-11-01“…Moreover, the lower confidence limit of reliability is obtained for the typical satellite intelligent power distribution system through the pseudo-lifetime data of the metallic oxide semiconductor field effect transistor. The lower confidence limit of reliability for this power distribution system at 15 years is 0.998, which meets the factory’s reliability requirement. …”
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