On the Effectiveness of Impedance-Based Fingerprint Presentation Attack Detection by Jascha Kolberg, Daniel Gläsner, Ralph Breithaupt, Marta Gomez-Barrero, Jörg Reinhold, Arndt von Twickel, Christoph Busch

“…In this work, a fingerprint capture device based on thin film transistor (TFT) technology has been modified to additionally acquire the impedances of the presented fingers. …”
Get full text

Micromechanical mode-localized electric current sensor by Han Li, Zhao Zhang, Luhan Zu, Yongcun Hao, Honglong Chang

“…The mode-localized electric current sensor provides a new approach for measuring sub-microampere currents for applications in nuclear physics, including for photocurrent signals and transistor leakage currents. It could also become a key component of a portable mode-localized multimeter when combined with a mode-localized voltmeter. …”
Get full text

Energy Efficient Artificial Olfactory System with Integrated Sensing and Computing Capabilities for Food Spoilage Detection by Gyuweon Jung, Jaehyeon Kim, Seongbin Hong, Hunhee Shin, Yujeong Jeong, Wonjun Shin, Dongseok Kwon, Woo Young Choi, Jong‐Ho Lee

“…The AOS efficiently integrates an array of sensing units (merged field effect transistor (FET)‐type gas sensors and amplifier circuits) and an AND‐type nonvolatile memory (NVM) array. …”
Get full text

A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement by Dan Luo, Minyou Chen, Wei Lai, Hongjian Xia, Xueni Ding, Zhenyu Deng

“…It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. …”
Get full text

CVD growth of large-area monolayer WS2 film on sapphire through tuning substrate environment and its application for high-sensitive strain sensor by Weihuang Yang, Yuanbin Mu, Xiangshuo Chen, Ningjing Jin, Jiahao Song, Jiajun Chen, Linxi Dong, Chaoran Liu, Weipeng Xuan, Changjie Zhou, Chunxiao Cong, Jingzhi Shang, Silin He, Gaofeng Wang, Jing Li

“…By carefully optimizing the gas velocity, temperature, and height of substrate away from the tube bottom, a large-scale continues monolayered WS2 film was achieved. Field-effect transistor based on the as-grown monolayer WS2 showed a mobility of 3.76 cm2V−1 s−1 and ON/OFF ratio of 106. …”
Get full text

Effect of Solder Layer Void Damage on the Temperature of IGBT Modules by Pengpeng Xu, Peisheng Liu, Lei Yan, Zhao Zhang

“…In this study, a 3D model of IGBT (Insulated Gate Bipolar Transistor) packaging was built by DesignModeler. Based on ANSYS Workbench, the influence of void size, location, solder layer type, and thickness on the temperature distribution of the IGBT module was simulated. …”
Get full text

Power Loss Analysis and a Control Strategy of an Active Cell Balancing System Based on a Bidirectional Flyback Converter by Yu-Lin Lee, Chang-Hua Lin, Shih-Jen Yang

“…To reduce the structural complexity, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) array commonly used in balancing system is replaced with the photovoltaic Metal-Oxide-Semiconductor (photoMOS) array. …”
Get full text

Online correction method of IGBT lifetime evaluation based on bonding wire failure monitoring by Qi Lei, Du Luchun, Zhang Xiangyu, Zhang Wuyu, Shen Hong

“…Abstract Insulated gate bipolar transistor (IGBT) modules are widely used as power switching devices. …”
Get full text

Design of ± 535 kV hybrid high voltage direct current (HVDC) circuit breaker by Chenyang Liu, Weizheng Yao, Chuan Xiang, Xufeng Cheng, Qinglong Wang

“…Simulation results indicate that an insulated gate bipolar transistor (IGBT) in the main branch will withstand the highest electrical stress (3305 V/2200 A) and the IGBT in the transferring branch will withstand the highest voltage stress (3327 V). …”
Get full text

Endurance of 2 Mbit Based BEOL Integrated ReRAM by Nils Kopperberg, Stefan Wiefels, Karl Hofmann, Jan Otterstedt, Dirk J. Wouters, Rainer Waser, Stephan Menzel

“…It is proposed, that an insufficient voltage dropping over the cell due to an unfavorable combination of cell- and transistor resistances is responsible for stuck-at-LRS bits. …”
Get full text

An ISFET Microarray Sensor System for Detecting the DNA Base Pairing by Peng Sun, Yongxin Cong, Ming Xu, Huaqing Si, Dan Zhao, Dongping Wu

“…In this study, a large-scale ion-sensitive field-effect transistor (ISFET) array chip with more than 13 million sensitive units is successfully designed for detecting the DNA base pairing. …”
Get full text

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications by Adrià Garcia-Gil, Subhajit Biswas, Justin D. Holmes

“…Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. …”
Get full text

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET by Xinfeng Nie, Ying Wang, Chenghao Yu, Xinxing Fei, Jianqun Yang, Xingji Li

“…Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry. …”
Get full text

A Novel AlGaN/Si₃N₄ Compound Buffer Layer HEMT with Improved Breakdown Performances by Jingwei Guo, Shengdong Hu, Ping Li, Jie Jiang, Ruoyu Wang, Yuan Wang, Hao Wu

“…In this article, an AlGaN and Si₃N₄ compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. …”
Get full text

Nonequilibrium thermodynamics in the strong coupling and non-Markovian regime based on a reaction coordinate mapping by Philipp Strasberg, Gernot Schaller, Neill Lambert, Tobias Brandes

“…Furthermore, we show for a single electron transistor coupled to vibrations that our method allows one to justify master equations derived in a polaron transformed reference frame.…”
Get full text

UWB-MMIC Matrix Distributed Low Noise Amplifier by Moustapha El Bakkali, Said Elkhaldi, Intissar Hamzi, Abdelhafid Marroun, Naima Amar Touhami

“…In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S₂₁, low reverse gain S₁₂, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is presented. This Low Noise Amplifier (LNA) was designed with the Advanced Design System simulator in distributed matrix architecture. …”
Get full text

Readout Integrated Circuit for Small-Sized and Low-Power Gas Sensor Based on HEMT Device by Seungjun Lee, Joohwan Jin, Jihyun Baek, Juyong Lee, Hyungil Chae

“…This paper presents a small-sized, low-power gas sensor system combining a high-electron-mobility transistor (HEMT) device and readout integrated circuit (ROIC). …”
Get full text

A 0.78–0.91–THz Wideband Frequency Tripler With Harmonic-Matched Bias Network by Kyeongho Yeom, Hyunjoon Kim, Iljin Lee, Sanggeun Jeon

“…Considering potential inaccuracy of the transistor model at the submillimeter-wave frequencies, a simple one-stage common-emitter topology is adopted for the wideband and stable operation. …”
Get full text

Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning by Yijun Li, Jianshi Tang, Bin Gao, Jian Yao, Anjunyi Fan, Bonan Yan, Yuchao Yang, Yue Xi, Yuankun Li, Jiaming Li, Wen Sun, Yiwei Du, Zhengwu Liu, Qingtian Zhang, Song Qiu, Qingwen Li, He Qian, Huaqiang Wu

“…The chip featured three key functional layers: the first was Si complementary metal-oxide-semiconductor (CMOS) for control logic; the second was computing-in-memory (CIM) layer with HfAlOx-based analog RRAM array to implement neural networks for feature extractions; the third was on-chip buffer and ternary content-addressable memory (TCAM) array for template storing and matching, based on Ta2O5-based binary RRAM and carbon nanotube field-effect transistor (CNTFET). Extensive structural analysis along with array-level electrical measurements and functional demonstrations on the CIM and TCAM arrays was performed. …”
Get full text

Fiducial Lower Confidence Limit of Reliability for a Power Distribution System by Xia Cai, Liang Yan, Yan Li, Yutong Wu

“…Moreover, the lower confidence limit of reliability is obtained for the typical satellite intelligent power distribution system through the pseudo-lifetime data of the metallic oxide semiconductor field effect transistor. The lower confidence limit of reliability for this power distribution system at 15 years is 0.998, which meets the factory’s reliability requirement. …”
Get full text