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7701
Design of voltage mode electronically tunable first order all pass filter in ±0.7 V 16 nm CNFET technology
Published 2019“…The AOTAPF has been designed using ±0.7 V, 16 nm carbon nanotube field effect transistor (CNFET) Technology. The circuit uses CNFET based varactor and unity gain inverting amplifier (UGIA). …”
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7702
Design of seamless graphene inverter together with its transfer matrix modeling
Published 2020-06-01“…Abstract: A seamless graphene inverter including graphene nanoribbon field effect transistor (GNRFET) and graphene interconnect is proposed. …”
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7703
Amplified Detection of the Aptamer–Vanillin Complex with the Use of Bsm DNA Polymerase
Published 2017-12-01“…Signal amplification improves the detection of the aptamer-analyte complex; Bsm DNA polymerase was used to amplify the signal from the interaction of vanillin and its aptamer named Van_74 on an ion-sensitive field-effect transistor (ISFET)-based biosensor. The aptamer was immobilized on the ISFET sensitive surface. …”
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7704
0.3-V, 357.4-nW Voltage-Mode First-Order Analog Filter Using a Multiple-Input VDDDA
Published 2023-01-01“…Using multiple-input MOS transistor technique, the filter can realize the first-order transfer functions of non-inverting and inverting low-pass, high-pass, and all-pass filters in a single topology with high input and low output impedance. …”
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7705
An X-Band State Adjustable Low Noise Amplifier Using Current Reuse Technique
Published 2023-01-01“…By connecting a small capacitor in parallel with the drain of the first-stage transistor, the bandwidth is expanded and the in-band flatness is improved. …”
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7706
A Cell-to-Cell Equalizer Based on Three-Resonant-State Switched-Capacitor Converters for Series-Connected Battery Strings
Published 2017-02-01“…However, it is difficult to achieve the full cell equalization for the SC equalizers due to the inevitable voltage drops across Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) switches. Moreover, when the voltage gap among cells is larger, the balancing efficiency is lower, while the balancing speed becomes slower as the voltage gap gets smaller. …”
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7707
Diseño de un calibrador de calidad para disminuir el desperdicio en el área de ensamble de un componente para automóvil
Published 2015-11-01“…Esta investigación de tipo aplicada es realizada en una empresa dentro de la industria automotriz en Ciudad Juárez Chihuahua México, en la cual se presenta un problema en el área de preforme para el doblez de los pines de los transistores que son ensamblados en un dispositivo llamado AFC (Automotive Fan Control, por sus siglas en inglés), el cual es utilizado para el funcionamiento del encendido y apagado de los ventiladores de enfriamiento del motor de un vehículo. …”
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7708
Achieving tissue-level softness on stretchable electronics through a generalizable soft interlayer design
Published 2023-07-01“…We have demonstrated stretchable transistor arrays and active-matrix circuits with moduli below 10 kPa—over two orders of magnitude lower than the current state of the art. …”
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7709
Degradation state analysis of the IGBT module based on apparent junction temperature
Published 2023-10-01“…Abstract The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. …”
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7710
Characterization with X-rays of a Large-Area GEMPix Detector with Optical Readout for QA in Hadron Therapy
Published 2021-07-01“…In this paper, we present a novel solution that combines a triple Gas Electron Multiplier (GEM) and a highly pixelated readout based on a matrix of organic photodiodes fabricated on top of an oxide-based thin-film transistor backplane. The first LaGEMPix prototype with an active area of 60 × 80 mm<sup>2</sup> was developed and characterized using low energy X-rays. …”
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7711
X-ray topographic study of defects in Si-based multilayer epitaxial power devices
Published 2016-03-01“…Silicon based multilayered epitaxial structures are currently the main material for large-scale commercial fabrication of generally used power semiconductor devices such as fast recovery epitaxial diodes (FRED), isolate gate bipolar transistor (IGBT), power MOSFETs etc. Defects in silicon based multilayer epitaxial structures used as the initial material for power epitaxial-diffusion devices have been studied by X-ray topography techniques. …”
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7712
An Efficient Model for NPD Performance Evaluation Using DEMATEL and Fuzzy ANP—Applied to the TFT-LCD Touch Panel Industry in Taiwan
Published 2015-10-01“…This study is to identify the thin film transistor-liquid crystal display (TFT-LCD) touch panel industry and then establish an integrated model of NPD performance evaluation for enterprises. …”
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7713
High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer
Published 2019-06-01“…Abstract In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes. …”
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7714
Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation
Published 2022-08-01“…This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.…”
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7715
Solid-State DC Circuit Breakers and Their Comparison in Modular Multilevel Converter Based-HVDC Transmission System
Published 2021-05-01“…The breaker is equipped with series insulated-gate bipolar transistor (IGBT) switches to mitigate the stress of high voltage on the switches. …”
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7716
Driving–Charging Integrated Controller for Electric Vehicles
Published 2022-01-01“…Based on the topology of a traditional EV motor controller, this study employs the time-sharing multiplexing insulated gate bipolar transistor (IGBT) power module form to expand the functions of the motor controller. …”
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7717
The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector
Published 2023-06-01“…Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. …”
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7718
A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process
Published 2021-11-01“…This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. …”
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7719
A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems
Published 2019-12-01“…Also, the proposed radiation-hardened SAR ADC with delay-based dual feedback flip-flops was designed and verified by utilizing compact transistor models, which reflect radiation effects to CMOS parameters, and radiation simulator computer aided design (CAD) tools.…”
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7720
Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements
Published 2019-07-01“…Abstract The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. …”
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