Design of voltage mode electronically tunable first order all pass filter in ±0.7 V 16 nm CNFET technology by Masud, Muhammad, A’ain, Abu, Khan, Iqbal, Husin, Nasir

“…The AOTAPF has been designed using ±0.7 V, 16 nm carbon nanotube field effect transistor (CNFET) Technology. The circuit uses CNFET based varactor and unity gain inverting amplifier (UGIA). …”
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Design of seamless graphene inverter together with its transfer matrix modeling by somayeh fotoohi, saeed haji-nasiri

“…Abstract: A seamless graphene inverter including graphene nanoribbon field effect transistor (GNRFET) and graphene interconnect is proposed. …”
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Amplified Detection of the Aptamer–Vanillin Complex with the Use of Bsm DNA Polymerase by Mariia Andrianova, Natalia Komarova, Vitaliy Grudtsov, Evgeniy Kuznetsov, Alexander Kuznetsov

“…Signal amplification improves the detection of the aptamer-analyte complex; Bsm DNA polymerase was used to amplify the signal from the interaction of vanillin and its aptamer named Van_74 on an ion-sensitive field-effect transistor (ISFET)-based biosensor. The aptamer was immobilized on the ISFET sensitive surface. …”
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0.3-V, 357.4-nW Voltage-Mode First-Order Analog Filter Using a Multiple-Input VDDDA by Fabian Khateb, Montree Kumngern, Tomasz Kulej, Viera Stopjakova, Costas Psychalinos

“…Using multiple-input MOS transistor technique, the filter can realize the first-order transfer functions of non-inverting and inverting low-pass, high-pass, and all-pass filters in a single topology with high input and low output impedance. …”
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An X-Band State Adjustable Low Noise Amplifier Using Current Reuse Technique by Yujun Wang, Lixi Wan, Zhengli Wang, Haitao Zhang, Yunqian Song, Xiaobin Zhang, Zhi Jin

“…By connecting a small capacitor in parallel with the drain of the first-stage transistor, the bandwidth is expanded and the in-band flatness is improved. …”
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A Cell-to-Cell Equalizer Based on Three-Resonant-State Switched-Capacitor Converters for Series-Connected Battery Strings by Yunlong Shang, Qi Zhang, Naxin Cui, Chenghui Zhang

“…However, it is difficult to achieve the full cell equalization for the SC equalizers due to the inevitable voltage drops across Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) switches. Moreover, when the voltage gap among cells is larger, the balancing efficiency is lower, while the balancing speed becomes slower as the voltage gap gets smaller. …”
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Diseño de un calibrador de calidad para disminuir el desperdicio en el área de ensamble de un componente para automóvil by Paloma Michelle Torres Hernández, Luis Gonzalo Guillén Anaya, Gabriel Isaac Siller Orozco, Carlos Felipe Ramírez Espinoza, Lázaro Rico Pérez, Raúl Ñeco Caberta, Erwin Adán Martínez Gómez

“…Esta investigación de tipo aplicada es realizada en una empresa dentro de la industria automotriz en Ciudad Juárez Chihuahua México, en la cual se presenta un problema en el área de preforme para el doblez de los pines de los transistores que son ensamblados en un dispositivo llamado AFC (Automotive Fan Control, por sus siglas en inglés), el cual es utilizado para el funcionamiento del encendido y apagado de los ventiladores de enfriamiento del motor de un vehículo. …”
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Achieving tissue-level softness on stretchable electronics through a generalizable soft interlayer design by Yang Li, Nan Li, Wei Liu, Aleksander Prominski, Seounghun Kang, Yahao Dai, Youdi Liu, Huawei Hu, Shinya Wai, Shilei Dai, Zhe Cheng, Qi Su, Ping Cheng, Chen Wei, Lihua Jin, Jeffrey A. Hubbell, Bozhi Tian, Sihong Wang

“…We have demonstrated stretchable transistor arrays and active-matrix circuits with moduli below 10 kPa—over two orders of magnitude lower than the current state of the art. …”
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Degradation state analysis of the IGBT module based on apparent junction temperature by Guoqing Xu, Lingfeng Shao, Xiaoyan Xu, Shen Li

“…Abstract The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. …”
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Characterization with X-rays of a Large-Area GEMPix Detector with Optical Readout for QA in Hadron Therapy by Andreia Maia Oliveira, Hylke B. Akkerman, Saverio Braccini, Albert J. J. M. van Breemen, Lucia Gallego Manzano, Natalie Heracleous, Ilias Katsouras, Johannes Leidner, Fabrizio Murtas, Bart Peeters, Marco Silari

“…In this paper, we present a novel solution that combines a triple Gas Electron Multiplier (GEM) and a highly pixelated readout based on a matrix of organic photodiodes fabricated on top of an oxide-based thin-film transistor backplane. The first LaGEMPix prototype with an active area of 60 × 80 mm² was developed and characterized using low energy X-rays. …”
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X-ray topographic study of defects in Si-based multilayer epitaxial power devices by Iren L. Shul'pina, Vladimir A. Kozlov

“…Silicon based multilayered epitaxial structures are currently the main material for large-scale commercial fabrication of generally used power semiconductor devices such as fast recovery epitaxial diodes (FRED), isolate gate bipolar transistor (IGBT), power MOSFETs etc. Defects in silicon based multilayer epitaxial structures used as the initial material for power epitaxial-diffusion devices have been studied by X-ray topography techniques. …”
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An Efficient Model for NPD Performance Evaluation Using DEMATEL and Fuzzy ANP—Applied to the TFT-LCD Touch Panel Industry in Taiwan by Wen-Chin Chen, Hui-Pin Chang, Kuan-Ming Lin, Neng-Hao Kan

“…This study is to identify the thin film transistor-liquid crystal display (TFT-LCD) touch panel industry and then establish an integrated model of NPD performance evaluation for enterprises. …”
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High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer by Chao Yang, Xiaorong Luo, Tao Sun, Anbang Zhang, Dongfa Ouyang, Siyu Deng, Jie Wei, Bo Zhang

“…Abstract In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes. …”
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Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation by Siddharth Gupta, Pratik Joshi, Ritesh Sachan, Jagdish Narayan

“…This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.…”
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Solid-State DC Circuit Breakers and Their Comparison in Modular Multilevel Converter Based-HVDC Transmission System by Gul Ahmad Ludin, Mohammad Amin Amin, Hidehito Matayoshi, Shriram S. Rangarajan, Ashraf M. Hemeida, Hiroshi Takahashi, Tomonobu Senjyu

“…The breaker is equipped with series insulated-gate bipolar transistor (IGBT) switches to mitigate the stress of high voltage on the switches. …”
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Driving–Charging Integrated Controller for Electric Vehicles by Kai Zhou, Haolin Fang, Yang Liu

“…Based on the topology of a traditional EV motor controller, this study employs the time-sharing multiplexing insulated gate bipolar transistor (IGBT) power module form to expand the functions of the motor controller. …”
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The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector by Yingdong Wei, Chenyu Yao, Li Han, Libo Zhang, Zhiqingzi Chen, Lin Wang, Wei Lu, Xiaoshuang Chen

“…Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. …”
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A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process by Min-Su Kim, Heesauk Jhon

“…This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. …”
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A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems by Duckhoon Ro, Changhong Min, Myounggon Kang, Ik Joon Chang, Hyung-Min Lee

“…Also, the proposed radiation-hardened SAR ADC with delay-based dual feedback flip-flops was designed and verified by utilizing compact transistor models, which reflect radiation effects to CMOS parameters, and radiation simulator computer aided design (CAD) tools.…”
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Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements by Wenwu Xiao, Chen Liu, Yue Peng, Shuaizhi Zheng, Qian Feng, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao, Yichun Zhou

“…Abstract The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. …”
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