Bilayer graphene application on NO2 sensor modelling by Akbari, Elnaz, Yusof, Rubiyah, Ahmadi, Mohammad Taghi, Enzevaee, Aria, Kiani, Mohammad Javad, Karimi, Hediyeh, Rahmani, Meisam

“…To start with modelling, the field effect transistor- (FET-) based structure has been chosen to serve as the platform and bilayer graphene density of state variation effect by N O 2 injection has been discussed. …”
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Design and implementation of 15-level cascaded multi-level voltage source inverter with harmonics elimination pulse-width modulation using differential evolution method by Salam, Zainal, Majed, Ahmed, Amjad, Abdul Moeed

“…Experimentally, The HEPWM waveforms are implemented using the Altera field programmable gate array, whereas the 15-level MVSI is built using metal-oxide semiconductor field effect transistor H-bridge. Selected results are presented; the simulation and hardware results are found to be in very close agreement with the theoretical predictions.…”

Car ignition system via mobile phone by Karim, Jamilah, Amat, Wan Mohd Arman Bin Wan, Razak, Abdul Hadi Abdul

“…The hardware parts are Rabbit Core Module (RCM3200) with Prototyping Board (RCM3100), GSM/GPRS modem: Wavecom 900/1900 MHz Machine-to-Machine (M2M) and bipolar junction transistor (BJT) circuit. The system purpose is to ignite the car engine by using the mobile phone.By sending a text message (SMS) from mobile phone, the system could ignite the engine. …”
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Ternary encoder and decoder designs in RRAM and CNTFET technologies by Shams Ul Haq, Vijay Kumar Sharma

“…The carbon nanotube field effect transistor (CNTFET) has been exclusively used for the implementation of MVL circuits. …”
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Characteristics Research of a High Sensitivity Piezoelectric MOSFET Acceleration Sensor by Chunpeng Ai, Xiaofeng Zhao, Dianzhong Wen

“…In order to improve the output sensitivity of the piezoelectric acceleration sensor, this paper proposed a high sensitivity acceleration sensor based on a piezoelectric metal oxide semiconductor field effect transistor (MOSFET). It is constituted by a piezoelectric beam and an N-channel depletion MOSFET. …”
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Evaluation of silicon nitride as a substrate for culture of PC12 cells: an interfacial model for functional studies in neurons. by Johan Jaime Medina Benavente, Hideo Mogami, Takashi Sakurai, Kazuaki Sawada

“…Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we characterized their interaction based on cell behavior when seeded on the tested material. …”
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A 5.67 ENOB Vector Matrix Multiplier with Charge Storage FET Cells and Non-Linearity Compensation Techniques by Jin-Young Hwang, Young-Taek Ryu, Kee-Won Kwon

“…In this paper, we provide a thorough analysis and enhancement techniques of the linearity between the input voltage and output current in charge storage field effect transistor (FET) cells for a vector–matrix multiplier array in neural networks. …”
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GRNN-Based Scattering Parameter Modeling Investigation for HBT at Different Temperature by Qian Lin, Xiao-Zheng Wang, Hai-Feng Wu

“…In this paper, the scattering parameter (S-parameter) modeling method for heterojunction bipolar transistor (HBT) at different temperatures is investigated. …”
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A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun by Wonseok Choe, Jinho Jeong

“…Measurement of the fabricated on-chip transition in 250 nm InP heterojunction bipolar transistor (HBT) technology, shows wideband impedance match and low insertion loss at H-band frequencies (220–320 GHz), without in-band resonances, due to the properly placed backside vias.…”
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Thermoelectric properties of topological chains coupled to a quantum dot by A. C. P. Lima, R. C. Bento Ribeiro, J. H. Correa, Fernanda Deus, M. S. Figueira, Mucio A. Continentino

“…We consider a device in the form of a single electron transistor coupled to the simplest kind of topological insulators, namely chains of atoms with hybridized sp orbitals. …”
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Single JFET Front-End Amplifier for Low Frequency Noise Measurements with Cross Correlation-Based Gain Calibration by Graziella Scandurra, Gino Giusi, Carmine Ciofi

“…With respect to amplifiers based on differential input stages, a single transistor stage has, among others, the advantage of a lower background noise. …”
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A Transformer-Less Buck-Boost Grid-Tied Inverter with Low Leakage-Current and High Voltage-Gain by Chien-Hsuan Chang, Yi-Fan Chen

“…High-frequency switching is only performed in one metal-oxide-semiconductor field-effect transistor (MOSFET) in each mode, which can effectively improve conversion efficiency. …”
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A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter by Jung-Woo Yang, Sang-Kyoo Han

“…This paper highlights the proposed silicon field-effect transistor (Si-FET)-based high switching frequency three-level (TL) LLC resonant converter. …”
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A 0.026 mm² Time Domain CMOS Temperature Sensor with Simple Current Source by Sangwoo Park, Sangjin Byun

“…This sensor chip only occupies a small active die area of 0.026 mm² because it adopts a simple current source consisting of an <i>n</i>-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. …”
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Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime by Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won‐Jun Lee, Jongwan Jung, Seongjae Cho

“…The p‐type nanowire field‐effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in‐depth technology computer‐aided design (TCAD) with quantum models for sub‐10‐nm advanced logic technology. …”
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Evaluation by Neutron Radiation of the NMR-MPar Fault-Tolerance Approach Applied to Applications Running on a 28-nm Many-Core Processor by Vanessa Vargas, Pablo Ramos, Raoul Velazco

“…However, the continuous shrinking of transistor geometry and the increasing complexity of these devices dramatically affect their sensitivity to natural radiation, and thus diminish their reliability. …”
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Efficient machine learning-assisted failure analysis method for circuit-level defect prediction by Joydeep Ghosh

“…Integral to the success of transistor advancements is the accurate use of failure analysis (FA) which benefits in fine-tuning and optimization of the fabrication processes. …”
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Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses by Narasimhulu Thoti, Yiming Li

“…Abstract This work reports an emerging structure of gate-all-around ferroelectric area tunneling field-effect transistor (FATFET) by considering ferroelectric and a n-epitaxial layer enveloped around the overlapped region of the source and channel to succeed with complete area of tunneling probability. …”
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The design of a point of care FET biosensor to detect and screen COVID-19 by Nisreen Alnaji, Asma Wasfi, Falah Awwad

“…Abstract Graphene field effect transistor (FET) biosensors have attracted huge attention in the point-of-care and accurate detection. …”
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Hardware/Software Co-Design for TinyML Voice-Recognition Application on Resource Frugal Edge Devices by Jisu Kwon, Daejin Park

“…Furthermore, resistor–transistor logic, which perform not only windowing using the Hann function, but also acquire audio raw data, is added to the inter-integrated circuit sound module that collects audio data in the voice-recognition application. …”
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