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7761
Bilayer graphene application on NO2 sensor modelling
Published 2014“…To start with modelling, the field effect transistor- (FET-) based structure has been chosen to serve as the platform and bilayer graphene density of state variation effect by N O 2 injection has been discussed. …”
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7762
Design and implementation of 15-level cascaded multi-level voltage source inverter with harmonics elimination pulse-width modulation using differential evolution method
Published 2015“…Experimentally, The HEPWM waveforms are implemented using the Altera field programmable gate array, whereas the 15-level MVSI is built using metal-oxide semiconductor field effect transistor H-bridge. Selected results are presented; the simulation and hardware results are found to be in very close agreement with the theoretical predictions.…”
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7763
Car ignition system via mobile phone
Published 2009“…The hardware parts are Rabbit Core Module (RCM3200) with Prototyping Board (RCM3100), GSM/GPRS modem: Wavecom 900/1900 MHz Machine-to-Machine (M2M) and bipolar junction transistor (BJT) circuit. The system purpose is to ignite the car engine by using the mobile phone.By sending a text message (SMS) from mobile phone, the system could ignite the engine. …”
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Conference or Workshop Item -
7764
Ternary encoder and decoder designs in RRAM and CNTFET technologies
Published 2024-03-01“…The carbon nanotube field effect transistor (CNTFET) has been exclusively used for the implementation of MVL circuits. …”
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7765
Characteristics Research of a High Sensitivity Piezoelectric MOSFET Acceleration Sensor
Published 2020-09-01“…In order to improve the output sensitivity of the piezoelectric acceleration sensor, this paper proposed a high sensitivity acceleration sensor based on a piezoelectric metal oxide semiconductor field effect transistor (MOSFET). It is constituted by a piezoelectric beam and an N-channel depletion MOSFET. …”
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7766
Evaluation of silicon nitride as a substrate for culture of PC12 cells: an interfacial model for functional studies in neurons.
Published 2014-01-01“…Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we characterized their interaction based on cell behavior when seeded on the tested material. …”
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7767
A 5.67 ENOB Vector Matrix Multiplier with Charge Storage FET Cells and Non-Linearity Compensation Techniques
Published 2022-09-01“…In this paper, we provide a thorough analysis and enhancement techniques of the linearity between the input voltage and output current in charge storage field effect transistor (FET) cells for a vector–matrix multiplier array in neural networks. …”
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7768
GRNN-Based Scattering Parameter Modeling Investigation for HBT at Different Temperature
Published 2023-01-01“…In this paper, the scattering parameter (S-parameter) modeling method for heterojunction bipolar transistor (HBT) at different temperatures is investigated. …”
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7769
A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun
Published 2018-10-01“…Measurement of the fabricated on-chip transition in 250 nm InP heterojunction bipolar transistor (HBT) technology, shows wideband impedance match and low insertion loss at H-band frequencies (220–320 GHz), without in-band resonances, due to the properly placed backside vias.…”
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7770
Thermoelectric properties of topological chains coupled to a quantum dot
Published 2023-01-01“…We consider a device in the form of a single electron transistor coupled to the simplest kind of topological insulators, namely chains of atoms with hybridized sp orbitals. …”
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7771
Single JFET Front-End Amplifier for Low Frequency Noise Measurements with Cross Correlation-Based Gain Calibration
Published 2019-10-01“…With respect to amplifiers based on differential input stages, a single transistor stage has, among others, the advantage of a lower background noise. …”
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7772
A Transformer-Less Buck-Boost Grid-Tied Inverter with Low Leakage-Current and High Voltage-Gain
Published 2021-04-01“…High-frequency switching is only performed in one metal-oxide-semiconductor field-effect transistor (MOSFET) in each mode, which can effectively improve conversion efficiency. …”
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7773
A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter
Published 2019-08-01“…This paper highlights the proposed silicon field-effect transistor (Si-FET)-based high switching frequency three-level (TL) LLC resonant converter. …”
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7774
A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current Source
Published 2020-09-01“…This sensor chip only occupies a small active die area of 0.026 mm<sup>2</sup> because it adopts a simple current source consisting of an <i>n</i>-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. …”
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7775
Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime
Published 2019-10-01“…The p‐type nanowire field‐effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in‐depth technology computer‐aided design (TCAD) with quantum models for sub‐10‐nm advanced logic technology. …”
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7776
Evaluation by Neutron Radiation of the NMR-MPar Fault-Tolerance Approach Applied to Applications Running on a 28-nm Many-Core Processor
Published 2018-11-01“…However, the continuous shrinking of transistor geometry and the increasing complexity of these devices dramatically affect their sensitivity to natural radiation, and thus diminish their reliability. …”
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7777
Efficient machine learning-assisted failure analysis method for circuit-level defect prediction
Published 2024-06-01“…Integral to the success of transistor advancements is the accurate use of failure analysis (FA) which benefits in fine-tuning and optimization of the fabrication processes. …”
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7778
Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses
Published 2022-05-01“…Abstract This work reports an emerging structure of gate-all-around ferroelectric area tunneling field-effect transistor (FATFET) by considering ferroelectric and a n-epitaxial layer enveloped around the overlapped region of the source and channel to succeed with complete area of tunneling probability. …”
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7779
The design of a point of care FET biosensor to detect and screen COVID-19
Published 2023-03-01“…Abstract Graphene field effect transistor (FET) biosensors have attracted huge attention in the point-of-care and accurate detection. …”
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7780
Hardware/Software Co-Design for TinyML Voice-Recognition Application on Resource Frugal Edge Devices
Published 2021-11-01“…Furthermore, resistor–transistor logic, which perform not only windowing using the Hann function, but also acquire audio raw data, is added to the inter-integrated circuit sound module that collects audio data in the voice-recognition application. …”
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