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7781
Real-Time Temperature Prediction of Power Devices Using an Improved Thermal Equivalent Circuit Model and Application in Power Electronics
Published 2023-12-01“…As a core component of photovoltaic power generation systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe temperature swings due to complex operation conditions and various environmental conditions, resulting in fatigue failure. …”
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Article -
7782
Evidence of the Coulomb gap in the density of states of MoS_{2}
Published 2023-02-01“…In this study we investigate the insulating state of a dual-gated exfoliated bilayer MoS_{2} field-effect transistor by performing magnetotransport experiments. …”
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Article -
7783
First demonstration of 30 eVee ionization energy resolution with Ricochet germanium cryogenic bolometers
Published 2024-02-01“…More specifically, we present the first demonstration of a 30 eVee (electron equivalent) baseline ionization resolution (RMS) achieved with an early design of the detector assembly and its dedicated High Electron Mobility Transistor (HEMT) based front-end electronics with a total input capacitance of about 40 pF. …”
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Article -
7784
Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics
Published 2020-07-01“…The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. …”
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Article -
7785
A Novel Dielectric Modulated Misaligned Double-Gate Junctionless MOSFET as a Label-Free Biosensor
Published 2023-05-01“…This research paper presents a misaligned double-gate junctionless Metal-Oxide-Semiconductor Field-Effect Transistor for label-free detection of biomolecules. …”
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Article -
7786
Using the Non-linear Behavior of the Brokaw Bandgap Voltage Reference Cell to Linearize Resistance Temperature Detectors (RTD)
Published 2019-01-01“…The intrinsic curvature of the Brokaw bandgap voltage reference cell, caused by the non- linear variation of the bipolar transistor's VBE with temperature, can be used to create a compensation voltage that can be used to reduce the non-linearity of the signal processing circuit of resistance temperature. …”
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Article -
7787
A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design
Published 2021-09-01“…A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. …”
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Article -
7788
Verification of angular dependence in MOSFET detector
Published 2019-02-01“…However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of meas-urement, as well as easy handling. …”
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Article -
7789
Perancangan Rangkaian Terpadu Penguat Operasional Untuk Pengatur Nada
Published 2012-05-01“…Suatu rangkaian terpadu (integrated circuit -IC) adalah sebuah kristal silikon kecil yang disebut chip mengandung komponen elektronika seperti transistor,dioda, resistor, dan kapasitor. Komponen itu saling dihubungkan dalam chip membentuk suatu rangkaian listrik tertentu. …”
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Article -
7790
A RESEARCH ON SOCIAL MEDIA ADDICTION AND DOPAMINE DRIVEN FEEDBACK
Published 2018-12-01“…The great technological developments coming up to date and began with the invention of the transistor in the mid-20th century allowed the technological communication tools to enter through our pockets and caused great changes in the way of communication of the societies. …”
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Article -
7791
Area-Selective Defect-Related Modulation of Optical and Electrical Properties of Monolayer Molybdenum Disulfide by Focused-Laser Irradiation
Published 2022-12-01“…Cryogenic PL and field-effect transistor experiments were also performed to understand the defect-related phenomena comprehensively. …”
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Article -
7792
Embedded Memories for Cryogenic Applications
Published 2021-12-01“…As the temperature goes down to 77 K, six-transistor static random-access memory (6T-SRAM) presents slight improvements for static noise margin (SNM) during hold and read operations, while suffering from lower (−16%) write SNM. …”
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Article -
7793
A Performance Optimized CSTBT with Low Switching Loss
Published 2023-05-01“…A novel Performance Optimized Carrier Stored Trench Gate Bipolar Transistor (CSTBT) with Low Switching Loss has been proposed. …”
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Article -
7794
Power Control of Series-Parallel Resonant Inverter For Induction Heating Using Buck Converter
Published 2010-05-01“…The inverter is operated at unity power factor byphased locked loop (PLL) control irrespective of load variations, with maximumcurrent gain, and practically no voltage spikes in the switching devices at turn-off,therefore no snubber circuit is used for operation at unity power factor. A powerMOSFET transistor is used as a switching device for buck converter and the IGBTtransistor is used as a switching device for the inverter. …”
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Article -
7795
A low-noise bandgap voltage reference employing dynamic element matching
Published 2013Get full text
Thesis -
7796
Energy-efficient wireless transmitter architecture for mobile multimedia
Published 2014Get full text
Thesis -
7797
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7798
High performance fast feedthrough CMOS logic circuits
Published 2009“…Detailed performance comparisons have been done with varying transistor width, VDD and capacitive load. The problems and issues faced during certain condition (e.g. low VDD) will be highlighted and discussed. …”
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Final Year Project (FYP) -
7799
Carbon nanotubes biosensors for high throughput electrophysiological measurement in living cells.
Published 2009“…This report especially discusses the development of Carbon NanoTube Field Effect Transistor (CNTFET) for analysis of cell’s electrophysiology. …”
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Final Year Project (FYP) -
7800
10MHz 1st order pattern noise free continuous time sigma delta modulator
Published 2024“…The dissertation follows a comprehensive design process, starting from the study of state-of-the-art ΣΔ converters and system specification definition, through architecture analysis and design, to circuit design at the transistor and physical level, culminating in detailed simulation and performance evaluation. …”
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Thesis-Master by Coursework