Showing 7,781 - 7,800 results of 8,472 for search '"transistors"', query time: 0.12s Refine Results
  1. 7781

    Real-Time Temperature Prediction of Power Devices Using an Improved Thermal Equivalent Circuit Model and Application in Power Electronics by Zhen Hu, Man Cui, Xiaohua Wu

    Published 2023-12-01
    “…As a core component of photovoltaic power generation systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe temperature swings due to complex operation conditions and various environmental conditions, resulting in fatigue failure. …”
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    Article
  2. 7782

    Evidence of the Coulomb gap in the density of states of MoS_{2} by Michele Masseroni, Tingyu Qu, Takashi Taniguchi, Kenji Watanabe, Thomas Ihn, Klaus Ensslin

    Published 2023-02-01
    “…In this study we investigate the insulating state of a dual-gated exfoliated bilayer MoS_{2} field-effect transistor by performing magnetotransport experiments. …”
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    Article
  3. 7783

    First demonstration of 30 eVee ionization energy resolution with Ricochet germanium cryogenic bolometers by Ricochet Collaboration

    Published 2024-02-01
    “…More specifically, we present the first demonstration of a 30 eVee (electron equivalent) baseline ionization resolution (RMS) achieved with an early design of the detector assembly and its dedicated High Electron Mobility Transistor (HEMT) based front-end electronics with a total input capacitance of about 40 pF. …”
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    Article
  4. 7784

    Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics by Maosheng Zhang, Na Ren, Qing Guo, Kuang Sheng

    Published 2020-07-01
    “…The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. …”
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    Article
  5. 7785

    A Novel Dielectric Modulated Misaligned Double-Gate Junctionless MOSFET as a Label-Free Biosensor by Saurabh Kumar, Rajeev Kumar Chauhan

    Published 2023-05-01
    “…This research paper presents a misaligned double-gate junctionless Metal-Oxide-Semiconductor Field-Effect Transistor for label-free detection of biomolecules. …”
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    Article
  6. 7786

    Using the Non-linear Behavior of the Brokaw Bandgap Voltage Reference Cell to Linearize Resistance Temperature Detectors (RTD) by Pedro Carvalhaes-Dias, Ivan P. Ferreira, Luίs F. C. Duarte, Flávio J. O. Morais

    Published 2019-01-01
    “…The intrinsic curvature of the Brokaw bandgap voltage reference cell, caused by the non- linear variation of the bipolar transistor's VBE with temperature, can be used to create a compensation voltage that can be used to reduce the non-linearity of the signal processing circuit of resistance temperature. …”
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    Article
  7. 7787

    A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design by Jihoon Kim

    Published 2021-09-01
    “…A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. …”
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    Article
  8. 7788

    Verification of angular dependence in MOSFET detector by Clayton Henrique de Souza

    Published 2019-02-01
    “…However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of meas-urement, as well as easy handling. …”
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    Article
  9. 7789

    Perancangan Rangkaian Terpadu Penguat Operasional Untuk Pengatur Nada by Beauty Beauty, Agung Darmawansyah, M. Julius Setyopranoto

    Published 2012-05-01
    “…Suatu rangkaian terpadu (integrated circuit -IC) adalah sebuah kristal silikon kecil yang disebut chip mengandung komponen elektronika seperti transistor,dioda, resistor, dan kapasitor. Komponen itu saling dihubungkan dalam chip membentuk suatu rangkaian listrik tertentu. …”
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    Article
  10. 7790

    A RESEARCH ON SOCIAL MEDIA ADDICTION AND DOPAMINE DRIVEN FEEDBACK by Gamze Macit, Orhan Güngör, Hüseyin Bilal Macit

    Published 2018-12-01
    “…The great technological developments coming up to date and began with the invention of the transistor in the mid-20th century allowed the technological communication tools to enter through our pockets and caused great changes in the way of communication of the societies. …”
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    Article
  11. 7791

    Area-Selective Defect-Related Modulation of Optical and Electrical Properties of Monolayer Molybdenum Disulfide by Focused-Laser Irradiation by Changhyun Ko

    Published 2022-12-01
    “…Cryogenic PL and field-effect transistor experiments were also performed to understand the defect-related phenomena comprehensively. …”
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    Article
  12. 7792

    Embedded Memories for Cryogenic Applications by Esteban Garzón, Adam Teman, Marco Lanuzza

    Published 2021-12-01
    “…As the temperature goes down to 77 K, six-transistor static random-access memory (6T-SRAM) presents slight improvements for static noise margin (SNM) during hold and read operations, while suffering from lower (−16%) write SNM. …”
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    Article
  13. 7793

    A Performance Optimized CSTBT with Low Switching Loss by Hang Xu, Tianyang Feng, Wenrong Cui, Yafen Yang, David Wei Zhang

    Published 2023-05-01
    “…A novel Performance Optimized Carrier Stored Trench Gate Bipolar Transistor (CSTBT) with Low Switching Loss has been proposed. …”
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    Article
  14. 7794

    Power Control of Series-Parallel Resonant Inverter For Induction Heating Using Buck Converter by Turki K. Hassan, Enaam A. Ali

    Published 2010-05-01
    “…The inverter is operated at unity power factor byphased locked loop (PLL) control irrespective of load variations, with maximumcurrent gain, and practically no voltage spikes in the switching devices at turn-off,therefore no snubber circuit is used for operation at unity power factor. A powerMOSFET transistor is used as a switching device for buck converter and the IGBTtransistor is used as a switching device for the inverter. …”
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    Article
  15. 7795
  16. 7796
  17. 7797
  18. 7798

    High performance fast feedthrough CMOS logic circuits by Qu, Yang.

    Published 2009
    “…Detailed performance comparisons have been done with varying transistor width, VDD and capacitive load. The problems and issues faced during certain condition (e.g. low VDD) will be highlighted and discussed. …”
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    Final Year Project (FYP)
  19. 7799

    Carbon nanotubes biosensors for high throughput electrophysiological measurement in living cells. by Wellym.

    Published 2009
    “…This report especially discusses the development of Carbon NanoTube Field Effect Transistor (CNTFET) for analysis of cell’s electrophysiology. …”
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    Final Year Project (FYP)
  20. 7800

    10MHz 1st order pattern noise free continuous time sigma delta modulator by Zhang, Wenhan

    Published 2024
    “…The dissertation follows a comprehensive design process, starting from the study of state-of-the-art ΣΔ converters and system specification definition, through architecture analysis and design, to circuit design at the transistor and physical level, culminating in detailed simulation and performance evaluation. …”
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    Thesis-Master by Coursework