All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification by Benjamin Zambrano, Sebastiano Strangio, Tommaso Rizzo, Esteban Garzon, Marco Lanuzza, Giuseppe Iannaccone

“…The weights of the network are stored in single-poly floating-gate memory cells, using a single transistor per analog weight. This enables the classifier to be intrinsically reconfigurable, and to be trained for various classification problems, based on low-resolution images. …”
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First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure by Cong Wang, Guoying Gao, Hezhu Shao, Ke Xu

“…Recently, the experimentally fabricated van der Waals bilayer heterostructure of WSe2/SnS2 was found to possess excellent electronic and optoelectronic applications in p-n diode, photodetector and transistor (Yang et al., Nat. Commun., 2017, 8, 1906; Zhou et al., Adv. …”
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TID Circuit Simulation in Nanowire FETs and Nanosheet FETs by Jongwon Lee, Myounggon Kang

“…In this study, the effects of the total ionizing dose (TID) on a nanowire (NW) field-effect transistor (FET) and a nanosheet (NS) FET were analyzed. …”
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Development Board Implementation and Chip Design of IEEE 1588 Clock Synchronization System Applied to Computer Networking by Yan-Kai Lan, Yee-Shao Chen, Ting-Chao Hou, Bo-Lin Wu, Yuan-Sun Chu

“…The clock source of common network devices is provided by the transistor oscillator in the server, but the oscillator will change with factors such as aging and temperature, and it cannot be guaranteed that the oscillator in the server will work at the same frequency. …”
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Convolutional Echo‐State Network with Random Memristors for Spatiotemporal Signal Classification by Shaocong Wang, Hegan Chen, Woyu Zhang, Yi Li, Dingchen Wang, Shuhui Shi, Yaping Zhao, Kam Chi Loong, Xi Chen, Yujiao Dong, Yi Zhang, Yang Jiang, Chaudhry Furqan, Jia Chen, Qing Wang, Xiaoxin Xu, Guangyi Wang, Hongyu Yu, Dashan Shang, Zhongrui Wang

“…This imposes a big challenge to conventional digital hardware because of physically separated memory and processing units and the transistor scaling limit. Memristors are deemed a solution for efficient and portable deep learning. …”
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Development, Processing and Applications of a UV-Curable Polymer with Surface Active Thiol Groups by Manuel Müller, Rukan Nasri, Lars Tiemann, Irene Fernandez-Cuesta

“…Furthermore, we show how the polymer improves the electrical properties of a graphene field effect transistor, allowing for optimal performance at ambient conditions.…”
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A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM) by Runze Chen, Lixin Wang, Hongkai Zhang, Mengyao Cui, Min Guo

“…The epitaxial layer of HDSGRSO u-shape metal oxide semiconductor field effect transistor (UMOSFET) has been divided into three parts: the upper epitaxial layer, the lower epitaxial layer and the middle epitaxial layer with higher doping concentration. …”
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Design and Analysis of the IGBT Heat Dissipation Structure Based on Computational Continuum Mechanics by Xin Lin, Huawei Wu, Zhen Liu, Baosheng Ying, Congjin Ye, Yuanjin Zhang, Zhixiong Li

“…With the trend of high integration and high power of insulated gate bipolar transistor (IGBT) components, strict requirements have been placed on the heat dissipation capabilities of the IGBT devices. …”
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Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage by Xiaoyu Xia, Zhiyou Guo, Huiqing Sun

“…In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. …”
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Semiconducting Properties of the Hybrid Film of Elastic Poly(styrene-<i>b</i>-butadiene-<i>b</i>-styrene) Block Copolymer and Semiconducting Poly(3-hexylthiophene) Nanofibers by Takanori Goto, Jun Morita, Yuya Maekawa, Shinji Kanehashi, Takeshi Shimomura

“…The film was stretchable; however, at elongation by two times, the nanofiber network could not follow the elongation of the SBS matrix, and the conductivity decreased drastically. The field-effect transistor of this film was operated by bending deformation with a radius of curvature of 1.75 cm, though we could not obtain an off-state and the device operated in a normally-on state.…”
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Bridged EGFET Design for the Rapid Screening of Sorbents as Sensitisers in Water-Pollution Sensors by Hadi Rasam AlQahtani, Abdel-Basit M. Al-Odayni, Yusif Alhamed, Martin Grell

“…We further simplify the most ‘user-friendly’ potentiometric sensor for waterborne analytes, the ‘extended-gate field effect transistor’ (EGFET). This is accomplished using a ‘bridge’ design, that links two separate water pools, a ‘control gate’ (CG) pool and a ‘floating gate’ (FG) pool, by a bridge filled with agar-agar hydrogel. …”
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First-Principles Studies for Electronic Structure and Optical Properties of <i>p</i>-Type Calcium Doped α-Ga₂O₃ by Abhay Kumar Mondal, Mohd Ambri Mohamed, Loh Kean Ping, Mohamad Fariz Mohamad Taib, Mohd Hazrie Samat, Muhammad Aniq Shazni Mohammad Haniff, Raihana Bahru

“…Gallium oxide (Ga₂O₃) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of <i>p</i>-type Ga₂O₃ is a key problem that hinders its potential for realistic power applications. …”
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Electrical Double Percolation of Polybutadiene/Polyethylene Glycol Blends Loaded with Conducting Polymer Nanofibers by Jun Morita, Takanori Goto, Shinji Kanehashi, Takeshi Shimomura

“…From the temperature dependence of the field-effect mobility estimated by field-effect transistor (FET) measurements, the carrier transport was explained by a three-dimensional variable range hopping (VRH) model.…”
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Online Failure Diagnostic in Full-Bridge Module for Optimum Setup of an IGBT-Based Multilevel Inverter by Juan Carlos Iglesias-Rojas, Erick Velázquez-Lozada, Roberto Baca-Arroyo

“…This paper describes the critical failure mechanisms––cross-conduction, inductive avalanche, second turn-on, VS-undershoot, inrush current, and thermal runaway––that directly affect insulated gate bipolar transistor (IGBT) operation. The constructed inverter contains 18 transformer-based taps (six per phase); however, this work studied a single tap (IGBT-based full-bridge module) to understand the reasons for failure and the routes to mitigate them. …”
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Comparative Analysis of CMOS based Full Adders by Simulation in DSCH and Microwind by Sehan Amandu Gamage, Krishnan Subramaniam, Ahmad Anwar Zainuddin

“…It is then compared to determine if the transistor size may help achieve those benefits. Afterwards. …”
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The Class D Audio Power Amplifier: A Review by Shangming Mei, Yihua Hu, Hui Xu, Huiqing Wen

“…The audio power amplifier has developed from a transistor amplifier to a field-effect tube amplifier, and digital amplifiers have made significant progress in circuit technology, components, and ideological understanding. …”
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A New PWM Operational Scheme for MicroLED Displays Using Inverter and Dynamic SWEEP Signal Slope for Low Gray Level Expression by Kyeong-Soo Kang, Ji-Hwan Park, Chanjin Park, Ji-Ho Lee, Soo-Yeon Lee

“…We implement the proposed scheme with a low-temperature poly-Si oxide (LTPO) thin-film transistor (TFT) pixel circuit and verify the operation through HSPICE based on measured TFT data. …”
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AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches by Pawel Bajurko, Jakub Sobolewski, Yevhen Yashchyshyn, Pavlo Sai, Sergey L. Rumyantsev, Teodor Narytnyk, Grzegorz Cywinski

“…The second one employs a single electrically large shunt element configured as a high electron mobility transistor. Both arrangements allow the switches to achieve very high operational bandwidth, exceeding 100 GHz, without the requirement for very high lithography resolution. …”
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Evaluation of various phase-transition materials for steep switching super-low power application in the latest technology node by Hanggyo Jung, Jeesoo Chang, Jongwook Jeon

“…Recently, a phase-transition field effect transistor (phase-FET) integrated with a phase-transition material (PTM) is attracting attention as a steep switching device, and attempts to solve the power consumption limitation of conventional CMOS using various PTMs are continuing. …”
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A 0.3 V, Rail-to-Rail, Ultralow-Power, Non-Tailed, Body-Driven, Sub-Threshold Amplifier by Francesco Centurelli, Riccardo Della Sala, Giuseppe Scotti, Alessandro Trifiletti

“…The amplifier has been designed in a commercial 130 nm CMOS technology from STMicroelectronics and is able to operate with a nominal supply voltage of 0.3 V and a power consumption as low as 11.4 nW, while showing about 65 dB gain, a gain bandwidth product around 3.6 kHz with a 50 pF load capacitance and a common mode rejection ratio (CMRR) in excess of 60 dB. Transistor-level simulations show that the proposed circuit outperforms most of the state of the art amplifiers in terms of the main figures of merit. …”
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