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7861
All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification
Published 2022-01-01“…The weights of the network are stored in single-poly floating-gate memory cells, using a single transistor per analog weight. This enables the classifier to be intrinsically reconfigurable, and to be trained for various classification problems, based on low-resolution images. …”
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7862
First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure
Published 2023-08-01“…Recently, the experimentally fabricated van der Waals bilayer heterostructure of WSe2/SnS2 was found to possess excellent electronic and optoelectronic applications in p-n diode, photodetector and transistor (Yang et al., Nat. Commun., 2017, 8, 1906; Zhou et al., Adv. …”
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7863
TID Circuit Simulation in Nanowire FETs and Nanosheet FETs
Published 2021-04-01“…In this study, the effects of the total ionizing dose (TID) on a nanowire (NW) field-effect transistor (FET) and a nanosheet (NS) FET were analyzed. …”
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7864
Development Board Implementation and Chip Design of IEEE 1588 Clock Synchronization System Applied to Computer Networking
Published 2023-05-01“…The clock source of common network devices is provided by the transistor oscillator in the server, but the oscillator will change with factors such as aging and temperature, and it cannot be guaranteed that the oscillator in the server will work at the same frequency. …”
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7865
Convolutional Echo‐State Network with Random Memristors for Spatiotemporal Signal Classification
Published 2022-08-01“…This imposes a big challenge to conventional digital hardware because of physically separated memory and processing units and the transistor scaling limit. Memristors are deemed a solution for efficient and portable deep learning. …”
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7866
Development, Processing and Applications of a UV-Curable Polymer with Surface Active Thiol Groups
Published 2020-09-01“…Furthermore, we show how the polymer improves the electrical properties of a graphene field effect transistor, allowing for optimal performance at ambient conditions.…”
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7867
A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM)
Published 2020-11-01“…The epitaxial layer of HDSGRSO u-shape metal oxide semiconductor field effect transistor (UMOSFET) has been divided into three parts: the upper epitaxial layer, the lower epitaxial layer and the middle epitaxial layer with higher doping concentration. …”
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7868
Design and Analysis of the IGBT Heat Dissipation Structure Based on Computational Continuum Mechanics
Published 2020-07-01“…With the trend of high integration and high power of insulated gate bipolar transistor (IGBT) components, strict requirements have been placed on the heat dissipation capabilities of the IGBT devices. …”
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7869
Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
Published 2021-10-01“…In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. …”
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7870
Semiconducting Properties of the Hybrid Film of Elastic Poly(styrene-<i>b</i>-butadiene-<i>b</i>-styrene) Block Copolymer and Semiconducting Poly(3-hexylthiophene) Nanofibers
Published 2020-09-01“…The film was stretchable; however, at elongation by two times, the nanofiber network could not follow the elongation of the SBS matrix, and the conductivity decreased drastically. The field-effect transistor of this film was operated by bending deformation with a radius of curvature of 1.75 cm, though we could not obtain an off-state and the device operated in a normally-on state.…”
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7871
Bridged EGFET Design for the Rapid Screening of Sorbents as Sensitisers in Water-Pollution Sensors
Published 2023-08-01“…We further simplify the most ‘user-friendly’ potentiometric sensor for waterborne analytes, the ‘extended-gate field effect transistor’ (EGFET). This is accomplished using a ‘bridge’ design, that links two separate water pools, a ‘control gate’ (CG) pool and a ‘floating gate’ (FG) pool, by a bridge filled with agar-agar hydrogel. …”
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7872
First-Principles Studies for Electronic Structure and Optical Properties of <i>p</i>-Type Calcium Doped α-Ga<sub>2</sub>O<sub>3</sub>
Published 2021-01-01“…Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of <i>p</i>-type Ga<sub>2</sub>O<sub>3</sub> is a key problem that hinders its potential for realistic power applications. …”
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7873
Electrical Double Percolation of Polybutadiene/Polyethylene Glycol Blends Loaded with Conducting Polymer Nanofibers
Published 2020-11-01“…From the temperature dependence of the field-effect mobility estimated by field-effect transistor (FET) measurements, the carrier transport was explained by a three-dimensional variable range hopping (VRH) model.…”
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7874
Online Failure Diagnostic in Full-Bridge Module for Optimum Setup of an IGBT-Based Multilevel Inverter
Published 2022-07-01“…This paper describes the critical failure mechanisms––cross-conduction, inductive avalanche, second turn-on, VS-undershoot, inrush current, and thermal runaway––that directly affect insulated gate bipolar transistor (IGBT) operation. The constructed inverter contains 18 transformer-based taps (six per phase); however, this work studied a single tap (IGBT-based full-bridge module) to understand the reasons for failure and the routes to mitigate them. …”
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7875
Comparative Analysis of CMOS based Full Adders by Simulation in DSCH and Microwind
Published 2022-10-01“…It is then compared to determine if the transistor size may help achieve those benefits. Afterwards. …”
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7876
The Class D Audio Power Amplifier: A Review
Published 2022-10-01“…The audio power amplifier has developed from a transistor amplifier to a field-effect tube amplifier, and digital amplifiers have made significant progress in circuit technology, components, and ideological understanding. …”
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7877
A New PWM Operational Scheme for MicroLED Displays Using Inverter and Dynamic SWEEP Signal Slope for Low Gray Level Expression
Published 2023-01-01“…We implement the proposed scheme with a low-temperature poly-Si oxide (LTPO) thin-film transistor (TFT) pixel circuit and verify the operation through HSPICE based on measured TFT data. …”
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7878
AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches
Published 2023-01-01“…The second one employs a single electrically large shunt element configured as a high electron mobility transistor. Both arrangements allow the switches to achieve very high operational bandwidth, exceeding 100 GHz, without the requirement for very high lithography resolution. …”
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7879
Evaluation of various phase-transition materials for steep switching super-low power application in the latest technology node
Published 2024-05-01“…Recently, a phase-transition field effect transistor (phase-FET) integrated with a phase-transition material (PTM) is attracting attention as a steep switching device, and attempts to solve the power consumption limitation of conventional CMOS using various PTMs are continuing. …”
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7880
A 0.3 V, Rail-to-Rail, Ultralow-Power, Non-Tailed, Body-Driven, Sub-Threshold Amplifier
Published 2021-03-01“…The amplifier has been designed in a commercial 130 nm CMOS technology from STMicroelectronics and is able to operate with a nominal supply voltage of 0.3 V and a power consumption as low as 11.4 nW, while showing about 65 dB gain, a gain bandwidth product around 3.6 kHz with a 50 pF load capacitance and a common mode rejection ratio (CMRR) in excess of 60 dB. Transistor-level simulations show that the proposed circuit outperforms most of the state of the art amplifiers in terms of the main figures of merit. …”
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