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7961
SELF-OSCILLATING PARAMETRIC HUMIDITY SENSOR WITH FREQUENCY OUTPUT SIGNAL
Published 2023-03-01“… A self-oscillating parametric humidity sensor has been developed that implements the principle of "humidity-frequency" conversion into hybrid integrated circuit based on a microelectronic transistor structure with a negative differential resistance, in which the humidity-sensitive element is a resistor of the HR202 type. …”
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Article -
7962
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7963
Methods for compact modeling of process variations in silicon photonics devices
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Thesis -
7964
Investigation on Ultra-miniature and Ultra-low-power Non-invasive CMOS pH Sensor for Intracellular Monitoring
Published 2022“…The intrinsic multilayer process and the dense transistor capacity of complementary metal oxide semiconductor (CMOS) technology has offered a great compact solution for miniaturized noninvasive pH sensors. …”
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Thesis -
7965
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7966
Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering
Published 2004“…In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. …”
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Article -
7967
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7968
Circuit analysis for camouflage netlists
Published 2021“…The most straight-forward algorithm (Brute-force) is not very effective for reverse engineering as the common IC chips that we use consist of billions of transistor in one package. Thus, the brute-force attack is too long, making the mentioned algorithm not economically viable for the malicious party. …”
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Final Year Project (FYP) -
7969
Design of a CMOS relaxation oscillator with reduced circuit sensitivity
Published 2022“…The oscillator includes a stable 2-Transistor based voltage reference without operational amplifier, a simple current reference employing the temperature-compensated composite resistor and the approximated Complementary-to-Absolute-Temperature (CTAT) delay based comparators compensate the approximated Proportional-to-Absolute-Temperature (PTAT) delay arising from the leakage currents in switches. …”
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Thesis-Master by Coursework -
7970
Design of an ultra-low-voltage CMOS relaxation clock oscillator
Published 2023“…This dissertation presents the design of a 0.45 V fully-integrated relaxation oscillator using TSMC 40nm CMOS process technology. It comprises, a 2-Transistor (2-T) voltage reference, a current reference generator and a comparator in conjunction of the associated switched-capacitor network. …”
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Thesis-Master by Coursework -
7971
Design of a digital PWM for digital class D amplifiers
Published 2010“…Additional delay elements and buffers were included as and where the source of problems occurred, and tuning the counter flip-flop transistor size was done to optimize the output response. …”
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Final Year Project (FYP) -
7972
Compact modeling of gate-all-around silicon nanowire MOSFETs
Published 2012“…An intrinsic long channel transistor drain current model is developed as the core model without charge-sheet approximation. …”
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Thesis -
7973
Development of a low cost commercial switching mode power supply
Published 2012“…In this switched-mode power supply switches a power transistor between saturation and cutoff with a variable duty cycle whose average is the desired output voltage. …”
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Final Year Project (FYP) -
7974
Vertical-SI-nanowire based nonvolatile flash memory for 3-D ultrahigh density application
Published 2012“…Among various cell structures, the Gate-All-Around (GAA) cylindrical nanowire (NW)- field effect transistor (FET) is being considered as one of the strong potential candidates to advance the NVM technology to the extreme miniaturization limits, due to the optimal electrostatic control which translates into nearly ideal subthreshold turn-on and a negligibly small short channel effect (SCE). …”
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Thesis -
7975
Hardware development of 3 phase unity power factor ac -ac converter
Published 2013“…The development of hardware will be the construction of the gate driver circuit for driving the Insulate Gate Bipolar Transistor modules. Recommendation by most manufacturers, the negative biasing needed in the voltage range of -15V to +15V to drive the IGBT module properly. …”
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Final Year Project (FYP) -
7976
HetNet enabled RF IC UWB-LNA design
Published 2018“…The proposed design consists of a self-defined transistor core from the TSMC’s 40nm CMOS library, with the inclusion of a Resistor-Capacitor Drain-Gate feedback, coupled with Bridge-Shunt and Series Peaking techniques. …”
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Final Year Project (FYP) -
7977
Frequency compensation in an input folded cascode output buffered opamp
Published 2018“…In this project, the whole design consists of the wide swing constant transconductance biasing circuit to make sure every transistor is in their conducting region, a PMOS input folded cascode circuit as an OTA and a push-pull class AB output stage. …”
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Final Year Project (FYP) -
7978
Design and implementation of voltage regulator for a power supply
Published 2018“…Linear regulators being researched and implemented are series voltage regulator, shunt voltage regulator, transistor shunt voltage regulator, fixed regulator and variable regulator. …”
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Final Year Project (FYP) -
7979
Memristor switching model for digital and analog circuits / Siti Musliha Ajmal Mokhtar
Published 2016“…Scaling of complementary-metal-oxide-semiconductor (CMOS) transistor for higher performance device is nearly reaching its limit due to technology limitation issues. …”
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Thesis -
7980
SVX4: A new deep-submicron readout IC for the Tevatron collider at fermilab
Published 2004“…Whereas SVX3D was fabricated in a 0.8-mum radiation-hard process, SVX4 was fabricated in a standard 0.25-mum mixed-signal CMOS technology using the "radiation tolerant by design" transistor topologies devised by the CERN RD49 collaboration. …”
Journal article