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8041
A 5-Bit X-Band GaN HEMT-Based Phase Shifter
Published 2021-03-01“…In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. …”
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Article -
8042
IMPULSE CONTROL HYBRID ELECTRICAL SYSTEM
Published 2017-01-01“…The main problem in controlling this type converters is in their hybrid nature as the switched circuit topology entails different modes of operation, each of it with its own associated linear continuous-time dynamics.This paper analyses the modeling and controller synthesis of the fixed-frequency buck DC-DC converter, in which the transistor switch is operated by a pulse sequence with constant frequency. …”
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Article -
8043
High-Efficiency GaN-Based Power Amplifiers for Envelope Nonlinearities’ Mitigation in VHF Wideband Polar-Mode Transmitters
Published 2023-09-01“…Its design is based on a solution called hybrid-coupled switching voltage PA in combination with gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed VHF PA prototype delivers up to 95 W from a 28 V power supply, with a drain efficiency about 80% within the 118 MHz to 138 MHz operating band. …”
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Article -
8044
An Efficient 24–30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks
Published 2023-01-01“…By means of de-embedding load-pull contours, modeling based on theoretical analysis, and simulation fitting for parameter identification, the nonlinear output capacitance and a series RLC model circuit approximating the input impedance response of the stabilized transistor were extracted. Under the design principle of fully absorbing the parasitic parameters of the device, explicit formulas and tabulated methods related to the Chebyshev impedance transformer were applied to construct filter-based synthesized matching networks at each stage and finally convert them into an implementable mixed-element form via the single-frequency equivalence technique. …”
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Article -
8045
Observation of MOSFET-like behavior of a TFT based on amorphous oxide semiconductor channel layer with suitable integration of atomic layered deposited high-k gate dielectrics
Published 2023-02-01“…Furthermore, we have prepared a metal oxide semiconductor field-effect transistor device with Al-doped ZnO as a channel material, and the electrical characteristic of the device was studied. …”
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Article -
8046
Power module heat sink design optimization with ensembles of data-driven polynomial chaos surrogate models
Published 2022-01-01“…We consider the problem of optimizing the design of a heat sink used for cooling an insulated gate bipolar transistor (IGBT) power module. The thermal behavior of the heat sink is originally estimated using a high-fidelity computational fluid dynamics (CFD) simulation, which renders numerical optimization too computationally demanding. …”
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Article -
8047
Demonstration of Trench Isolated Monolithic GaN μLED Displays Enabled by Photoresist Planarization
Published 2023-01-01“…Most modern full-color μLED displays rely on red, green, and blue (RGB) pixels based on different material systems combined together on a thin-film transistor back panel, a costly process which often has very poor yield. …”
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Article -
8048
A Single-Phase Multilevel PV Generation System with an Improved Ripple Correlation Control MPPT Algorithm
Published 2017-12-01“…Results have been verified by experimental tests considering the whole multilevel PV generation system, including real PV modules, multilevel insulated-gate bipolar transistor (IGBT) inverters, and utility grids.…”
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Article -
8049
Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
Published 2023-10-01“…Abstract As transistor integration accelerates and miniaturization progresses, improving the interfacial adhesion characteristics of complex metal interconnect has become a major issue in ensuring semiconductor device reliability. …”
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Article -
8050
Programmable Current Control of Silicon Field Emitter Arrays Using Gate-All-Around MOSFETs
Published 2024“…The current approach to address these challenges involves integrating a resistor, nanowire (NW) current limiter, or metal-oxide-semiconductor field-effect transistor (MOSFET) in series with the emitter tips to regulate current flow. …”
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Thesis -
8051
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8052
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8053
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8054
Mechanism and assessment of spin transfer torque (STT) based memory
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Thesis -
8055
COMSOL simulation of electrostatic confinements in nanoscale TMDC QD devices
Published 2021“…In this investigation, electrostatic COMSOL Multiphysics simulation is tested then applied for a “transistor-like” split-gate geometry. Simultaneously, apparatus for Room Temperature (RT) and 4 Kelvin (4K) electrical characterisation have been reworked. 4K electrical characterisation of a newly fabricated split-gate MoS2 device suggests formation of QDs within the SD-channel. …”
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Final Year Project (FYP) -
8056
Crystal defect characterization using Python
Published 2021“…In this Final Year Project (FYP), Crystal defect characterization using Python will go through methods to rapidly detect the defects on the surface of GaN samples so that we can calculate the surface defect densities, an important metric that can affect transistor performance. This FYP will incorporate state-of-the-art computer vision by the means of python into creating an algorithm that detects the defects on the surface of the GaN samples.…”
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Final Year Project (FYP) -
8057
Manipulating exciton transport in a two-dimensional transition metal dichalcogenide semiconductor
Published 2023“…Utilizing a combination of real-space imaging, spatially-resolved and time-resolved spectroscopic techniques, the photoluminescence (PL) and reflectance signatures are studied in large area monolayer MoS2 transistor devices. By using an electrostatic backgate, we reveal ultrafast and long-range propagation of excitons at low electron or hole doping concentrations. …”
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Thesis-Doctor of Philosophy -
8058
Implementation of radiation-hardened by design library cells for AES algorithm for satellite applications in a 130nm process
Published 2024“…The radiation hardness in our design involves increasing the transistor gate width, which enhances the drain currents and thereby mitigates the impact of fault transient current pulses caused by SETs. …”
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Thesis-Master by Coursework -
8059
A 12-bit ultra-low power analog to digital converter design for an infrared imaging system
Published 2010“…Some of special techniques are also realized to minimize the digital noise in the circuits including the realization of a clock delay for dynamic comparator and the optimization of transistor sizes. This 12-bit ADC design is realized on the bias of 0.35μm AMS process. …”
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Final Year Project (FYP) -
8060
Simulating the electron beam induced current (EBIC) effect in a computer
Published 2012“…Material characterisation is one of the important fields in the research and study of semiconductor materials and devices characterization aims to determine and study the parameters, i.e., diffusion length, that play a significant role in the functionality and performance of semiconductor devices such as bipolar transistor, solar cells and photodiodes. The studies of the material and devices characterization technique such as EBIC technique can be studied using the TCAD simulation on computer. …”
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Final Year Project (FYP)