A 5-Bit X-Band GaN HEMT-Based Phase Shifter by Hsien-Chin Chiu, Chun-Ming Chen, Li-Chun Chang, Hsuan-Ling Kao

“…In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. …”
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IMPULSE CONTROL HYBRID ELECTRICAL SYSTEM by A. A. Lobaty, Yu. N. Petrenko, A. S. Abufanas, I. Elzein

“…The main problem in controlling this type converters is in their hybrid nature as the switched circuit topology entails different modes of operation, each of it with its own associated linear continuous-time dynamics.This paper analyses the modeling and controller synthesis of the fixed-frequency buck DC-DC converter, in which the transistor switch is operated by a pulse sequence with constant frequency. …”
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High-Efficiency GaN-Based Power Amplifiers for Envelope Nonlinearities’ Mitigation in VHF Wideband Polar-Mode Transmitters by Moisés Patiño-Gómez, Francisco-Javier Ortega-González

“…Its design is based on a solution called hybrid-coupled switching voltage PA in combination with gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed VHF PA prototype delivers up to 95 W from a 28 V power supply, with a drain efficiency about 80% within the 118 MHz to 138 MHz operating band. …”
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An Efficient 24–30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks by Lin Peng, Jing Yan, Zhihao Zhang, Gary Zhang

“…By means of de-embedding load-pull contours, modeling based on theoretical analysis, and simulation fitting for parameter identification, the nonlinear output capacitance and a series RLC model circuit approximating the input impedance response of the stabilized transistor were extracted. Under the design principle of fully absorbing the parasitic parameters of the device, explicit formulas and tabulated methods related to the Chebyshev impedance transformer were applied to construct filter-based synthesized matching networks at each stage and finally convert them into an implementable mixed-element form via the single-frequency equivalence technique. …”
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Observation of MOSFET-like behavior of a TFT based on amorphous oxide semiconductor channel layer with suitable integration of atomic layered deposited high-k gate dielectrics by Kelsea A. Yarbrough, Makhes K. Behera, Jasmine Beckford, Sangram K. Pradhan, Messaoud Bahoura

“…Furthermore, we have prepared a metal oxide semiconductor field-effect transistor device with Al-doped ZnO as a channel material, and the electrical characteristic of the device was studied. …”
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Power module heat sink design optimization with ensembles of data-driven polynomial chaos surrogate models by Dimitrios Loukrezis, Herbert De Gersem

“…We consider the problem of optimizing the design of a heat sink used for cooling an insulated gate bipolar transistor (IGBT) power module. The thermal behavior of the heat sink is originally estimated using a high-fidelity computational fluid dynamics (CFD) simulation, which renders numerical optimization too computationally demanding. …”
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Demonstration of Trench Isolated Monolithic GaN μLED Displays Enabled by Photoresist Planarization by Bryan Melanson, Matthew Seitz, Jing Zhang

“…Most modern full-color μLED displays rely on red, green, and blue (RGB) pixels based on different material systems combined together on a thin-film transistor back panel, a costly process which often has very poor yield. …”
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A Single-Phase Multilevel PV Generation System with an Improved Ripple Correlation Control MPPT Algorithm by Manel Hammami, Gabriele Grandi

“…Results have been verified by experimental tests considering the whole multilevel PV generation system, including real PV modules, multilevel insulated-gate bipolar transistor (IGBT) inverters, and utility grids.…”
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Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential by Eunseog Cho, Won-Joon Son, Eunae Cho, Inkook Jang, Dae Sin Kim, Kyoungmin Min

“…Abstract As transistor integration accelerates and miniaturization progresses, improving the interfacial adhesion characteristics of complex metal interconnect has become a major issue in ensuring semiconductor device reliability. …”
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Programmable Current Control of Silicon Field Emitter Arrays Using Gate-All-Around MOSFETs by Sahagun, Alvaro

“…The current approach to address these challenges involves integrating a resistor, nanowire (NW) current limiter, or metal-oxide-semiconductor field-effect transistor (MOSFET) in series with the emitter tips to regulate current flow. …”
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Power-efficient design of 16-bit mixed-operand multipliers by Pornpromlikit, Sataporn, 1979-

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X-ray lithographic alignment and overlay applied to double-gate MOSFET fabrication by Meinhold, Mitchell W., 1972-

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Software orchestration of instruction level parallelism on tiled processor architectures by Lee, Walter (Walter Cheng-Wan)

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Mechanism and assessment of spin transfer torque (STT) based memory by Loh, Iong Ying

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COMSOL simulation of electrostatic confinements in nanoscale TMDC QD devices by Lai, Marcus Kar Fai

“…In this investigation, electrostatic COMSOL Multiphysics simulation is tested then applied for a “transistor-like” split-gate geometry. Simultaneously, apparatus for Room Temperature (RT) and 4 Kelvin (4K) electrical characterisation have been reworked. 4K electrical characterisation of a newly fabricated split-gate MoS2 device suggests formation of QDs within the SD-channel. …”
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Crystal defect characterization using Python by Zayar Naung

“…In this Final Year Project (FYP), Crystal defect characterization using Python will go through methods to rapidly detect the defects on the surface of GaN samples so that we can calculate the surface defect densities, an important metric that can affect transistor performance. This FYP will incorporate state-of-the-art computer vision by the means of python into creating an algorithm that detects the defects on the surface of the GaN samples.…”
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Manipulating exciton transport in a two-dimensional transition metal dichalcogenide semiconductor by Wong, Yi Ren

“…Utilizing a combination of real-space imaging, spatially-resolved and time-resolved spectroscopic techniques, the photoluminescence (PL) and reflectance signatures are studied in large area monolayer MoS2 transistor devices. By using an electrostatic backgate, we reveal ultrafast and long-range propagation of excitons at low electron or hole doping concentrations. …”
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Implementation of radiation-hardened by design library cells for AES algorithm for satellite applications in a 130nm process by Li, Boyu

“…The radiation hardness in our design involves increasing the transistor gate width, which enhances the drain currents and thereby mitigates the impact of fault transient current pulses caused by SETs. …”
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A 12-bit ultra-low power analog to digital converter design for an infrared imaging system by Liu, Shao Tao.

“…Some of special techniques are also realized to minimize the digital noise in the circuits including the realization of a clock delay for dynamic comparator and the optimization of transistor sizes. This 12-bit ADC design is realized on the bias of 0.35μm AMS process. …”
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Simulating the electron beam induced current (EBIC) effect in a computer by Lim, Wei lun

“…Material characterisation is one of the important fields in the research and study of semiconductor materials and devices characterization aims to determine and study the parameters, i.e., diffusion length, that play a significant role in the functionality and performance of semiconductor devices such as bipolar transistor, solar cells and photodiodes. The studies of the material and devices characterization technique such as EBIC technique can be studied using the TCAD simulation on computer. …”
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