Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation by Wu, Xing

“…The metal-insulator-semiconductor (MIS) stack based on conventional transistor was used in this study as an effective test structure to understand the chemical origin of switching behavior in the metal-insulator-metal (MIM) stack. …”
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Design a power-efficient asyncrhonous logic quasi-delay-insensitive network-on-chip for multi-core processor by Lim, Eng Soon.

“…To accommodate these PVT variations, four custom Static Logic Transistor-level Implementation (SLTI) cells are designed and implemented in asynchronous QDI logic using STMicroelectronics (STM) 65nm CMOS process. …”
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Asynchronous QDI library cell layout development and characterization by Choy, Joel Guo Wen

“…To date, different transistor widths has been designed, verified and simulated.…”
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Development of carbon-based polymer nanocomposite powder for selective laser sintering by Sim, Derek Jia Shu

“…In previous studies, surfactant has been used in the application of thin film transistor to disperse nanoparticle. Thus, similar application could be used to reduce the CNTs agglomeration. …”
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Noncovalent functionalization of single-walled carbon nanotubes by Zhao, Yanli, Stoddart, J. Fraser

“…Several examples for the applications of noncovalently functionalized SWNT hybrids in the fabrication of field-effect transistor (FET) devices, chemical sensors, molecular switch tunnel junctions (MSTJs), and photovoltaic devices are highlighted and discussed. …”
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Vertical silicon nanowire diode with nickel silicide induced dopant segregation by Li, Xiang, Tan, Chuan Seng, Lu, Weijie, Pey, Kin Leong, Wang, Xinpeng, Chen, Zhixian, Navab, Singh, Leong, Kam Chew, Gan, Chee Lip

“…Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing steps on nickel silicide formation in the DSSB VSiNW diodes. …”
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Study the effect of drain induced barrier lowering (DIBL) in CMOS device by using silvaco TCAD / Hashimah Hashim , Shafinaz Sobihana Shariffudin , Puteri Sarah Mohamad &Aad by Hashimah, Hashim, Shafinaz Sobihana, Shariffudin, Puteri Sarah, Mohamad

“…The study is based on the effect of DIBL due to short channel transistor. Three different values of drain voltage are biased in NMOS and PMOS device to see the role of this voltage on DIBL effects. …”
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First-principles investigation of electron-phonon interactions in novel superconductors by Fisher, H

“…The former is ideal for the study of the electron-phonon interaction, as it not only has potential applications as an atomically thin transistor, but also displays a dome-shaped superconductive state as a function of electron doping. …”

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se by Chen, C, Wang, M, Wu, J, Fu, H, Yang, H, Tian, Z, Tu, T, Peng, H, Sun, Y, Xu, X, Jiang, J, Schröter, N, Li, Y, Pei, D, Liu, S, Ekahana, S, Yuan, H, Xue, J, Li, G, Jia, J, Liu, Z, Yan, B, Peng, H, Chen, Y

“…In addition, the structural compatibility between Bi₂O₂Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO₃) further makes heterostructures between Bi₂O₂Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.…”

Electronic and optoelectronic devices based on 2-dimensional heterostructures by Huang, H

“…The decrease of rectification ratio under irradiation can be explained by the quick drop of Au-MoS₂ Schottky barrier height, which is derived by fitting the output characteristics of Au-MoS₂-Au and Gr-MoS₂-Gr device as a metal-semiconductor-metal transistor.</p> <p>The thickness of 2D materials is found to have a great impact on the properties of WS₂-graphene heterostructures. …”

Design of high compression point josephson junction travelling wave parametric amplifiers for readout of millimetre and sub-millimetre astronomical receivers by Navarro Montilla, J, Tan, BK

“…We then compare the SIS receiver noise performance utilising these JTWPAs with that of using a conventional high gain High Electron Mobility Transistor (HEMT) amplifier. We show that we can improve the receiver sensitivity significantly by either cascading two 23 dB gain JTWPA or using a combination of a 16 dB gain JTWPA and a HEMT amplifier. …”

Network architecture for a topological quantum computer in silicon by Buonacorsi, B, Cai, Z, Ramirez, E, Willick, K, Walker, S, Li, J, Shaw, B, Xu, X, Benjamin, S, Baugh, J

“…The minimal node contains only seven quantum dots, and nodes are separated on the micron scale, creating useful space for wiring interconnects and integration of conventional transistor circuits. Entanglement is distributed between neighbouring nodes by loading spin singlets locally and then shuttling one member of the pair through a linear array of empty dots. …”

Peranti suis nanoelektromekanikal (NEM) berunsurkan grafin dan tiub nano karbon (CNT) by Mohd Amir Zulkefli, Mohd Ambri Mohamed, Kim, S. Siow, Burhanuddin Yeop Majlis

“…Suis nanoelektromekanikal (NEM) mempunyai persamaan dengan suis konvensional semikonduktor apabila digunakan sebagai transistor dan penderia walaupun prinsip operasinya berbeza. …”
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Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization by Liu, Xinzhi, Shafie, Suhaidi, Radzi, Mohd Amran Mohd, Azis, Norhafiz, Karim, Abdul Hafiz Abdul

“…This research delves into the intricacies of the Enhancement mode Gallium Nitride High Electron Mobility Transistor (E-mode GaN HEMT). A focus is placed on its static characterization, parameter analysis, and the influence of external parasitic inductances, particularly regarding oscillation challenges during its hard switching process. …”

Development of Single Phase Induction Motor Adjustable Speed Control Using M68HC11E9 Micro controller by Hussien, Hamad Saad

“…A Buck type chopper has been used to control the input voltage of a fully controlled single phase Isolated Gate Bipolar Transistor (IGBT) bridge inverter. The proposed drive system is simulated using Matlab / Simulink, its results were compared with the hardware experimental results. …”
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0.18 um CMOS Power Amplifier for 2.45 GHz IoT Application by Ang, Wei Keat

“…Both driver stage and output stage utilise single stage common source transistor configuration. In the view of performance, the PA is able to deliver more than 20 dB gain in the frequency range of 2.4 GHz to 2.5 GHz. …”
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Design And Simulation Of Low Power Comparator Using Low Power Design Techniques For Analog Circuits by Rasidi, Syafira

“…Power reduction techniques such as Multi Threshold Super Cut-off Stack (MTSCStack), Dual Threshold Transistor Stacking (DTTS), bulk-driven current mirror, NMOS bulk-driven differential pair and PMOS bulk-driven differential pair were studied. …”
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Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board by Zainal Mokhtar, Khursiah

“…The purpose of this project is to implement and characterize a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low Noise Amplifier (LNA) at 4GHz. …”
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Position Movement And Speed Control By Stepper Motor With Microcontroller PIC16F877 by Pin Chye, Kang

“…The pulses which are sent from the PIC controller will use to triggered the transistor that will act as switch to supply the motor require voltage. …”
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Open-gated ph sensor fabricated on an undoped-algan/gan hemt structure by Zainal Abidin, Mastura Shafinaz, Hashim, Abdul Manaf, Sharifabad, Maneea Eizadi, Abd. Rahman, Shaharin Fadzli, Sadoh, Taizoh

“…The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. …”