Crystallization of polycrystalline silicon thin film by excimer laser annealing by Ab. Razak, Siti Noraiza

“…Enhancing the crystallization of silicon thin film is important for better performance of thin film transistor (TFT). In an attempt to achieve this goal,a fundamental study was carried out to enhance the crystallization of doped silicon thin film (STF) with various types of dopants. …”
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Analytical Modeling and Artificial Neural Network (ANN) Simulation of Current-Voltage Characteristics in Graphene Nanoscroll Based Gas Sensors by Khaledian, M., Ismail, Razali, Akbari, Elnaz

“…These are typically constructed on a field effect transistor (FET) based structure in which the GNS is employed as the channel between the source and the drain. …”

Analytical modeling of the sensing parameters for graphene nanoscroll-based gas sensors by Khaledian, Mohsen, Ismail, Razali, Saeidmanesh, Mehdi, Khaledian, Parviz

“…These are typically constructed on a field effect transistor (FET) based structure in which the GNS is employed as the channel between the source and the drain. …”

Digital logic circuit design using adiabatic approach by Zainal Abidin, Nurul Aisyah Nadiah

“…The findings showed that the proposed combinational circuit had less transistor count, lower power dissipation with lower voltage swing as compared to reference adiabatic circuits. …”
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An analytical conductance model for gas detection based on a zigzag carbon nanotube sensor by Hosseingholipourasl, A., Syed Ariffin, S. H., Ahmadi, M. A., Koloor, S. S. R.

“…In this work, analytical modeling of the semiconducting zigzag carbon nanotube field-effect transistor (ZCNT-FET) based sensor for the detection of gas molecules is demonstrated. …”
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New Resistor-Less Electronically Controllable ±C Simulator Employing VCII, DVCC, and a Grounded Capacitor by Giuseppe Ferri, Leila Safari, Gianluca Barile, Massimo Scarsella, Vincenzo Stornelli

“…The proposed circuit is designed at the transistor level in 0.18 µm and ±0.9 V supply voltage. …”
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Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design by Rui‐Jia Liu, Xiao‐Wei Zhu, Jing Xia, Yi‐Fan Jiang, Peng Chen, Chao Yu, Chuan Ge

“…For verification, a wideband monolithic microwave integrated circuit DPA was designed and fabricated using a 0.25‐μm gallium nitride based high‐electron‐mobility transistor process. Measurement results show that a saturated power of 41.6–42.4 dBm, a saturated drain efficiency (DE) of 65.3–72%, and a 6‐dB back‐off DE of 45–55.4% are achieved from 4.6 to 5.5 GHz. …”
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Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process by Won-Ho Jang, Jun-Hyeok Yim, Hyungtak Kim, Ho-Young Cha

“…We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor (MIS-HFET) without the need for a gate recess process. …”
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Inverter fault diagnosis based on Fourier transform and evolutionary neural network by Hongxin Yang, Zishun Peng, Zishun Peng, Qijin Xu, Tingxuan Huang, Xiangou Zhu, Xiangou Zhu

“…The experimental results show that the proposed algorithm and method of fault feature extraction can effectively detect and locate the insulated-gate bipolar transistor (IGBT) with open circuit (OC) fault in three-phase inverter, and can be applied to online monitoring.…”
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Simulation study of integrated‐gate‐commutated‐thyristor based superconducting hybrid direct current circuit breaker by Muhammad Junaid, Wenqing Yu, Shuzhi Cao, Xiaolong Yu, Dongsheng Yu, Weilin Zong, Jianhua Wang

“…In addition, the IGCT based hybrid DC circuit breaker (IGCT‐HDCCB) is compared with the traditional insulated gate bipolar transistor (IGBT) based hybrid DC circuit breaker (IGBT‐HDCCB) to evaluate which circuit breaker is more suitable for VSC‐MVDC. …”
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Smart automatic COVID door opening system with contactless temperature sensing by V. Venkataramanan, Diya Shah, Ishitaa Panda, Samyak Shah, Raj Davawala, Kavish Shah, Karan Salot

“…A passive infrared sensor observes the motion and transmits a signal to the transistor, which in turn gives an interrupt signal to the programmable ATMEGA microcontroller. …”
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A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature Compensation by Zhizhi Chen, Qian Wang, Xi Li, Sannian Song, Houpeng Chen, Zhitang Song

“…In order to achieve a high-precision BGR circuit, the equation of the nonlinear current has been modified and the high-order term of the current flowing into the nonlinear compensation bipolar junction transistor (NLCBJT) is compensated further. According to the modified equation, two solutions are designed to improve the output accuracy of BGR circuits. …”
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Enhanced Thermoelectric Conversion Efficiency of CVD Graphene with Reduced Grain Sizes by Gyumin Lim, Kenneth David Kihm, Hong Goo Kim, Woorim Lee, Woomin Lee, Kyung Rok Pyun, Sosan Cheon, Phillip Lee, Jin Young Min, Seung Hwan Ko

“…Electrical conductivity (σ) and Seebeck coefficients (S) were measured in a vacuum for supported graphene on SiO2/Si FET (Field Effect Transistor) substrates so that the charge carrier density could be changed by applying a gate voltage (VG). …”
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Simulation of a Single-Electron Device Based on Endohedral Fullerene (KI)@C₁₈₀ by Assel Istlyaup, Ainur Duisenova, Lyudmila Myasnikova, Daulet Sergeyev, Anatoli I. Popov

“…The values of the total energy and the stability diagram of a single-electron transistor based on endohedral fullerene (KI)@C₁₈₀ were determined. …”
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On-water surface synthesis of electronically coupled 2D polyimide-MoS2 van der Waals heterostructure by Anupam Prasoon, Hyejung Yang, Mike Hambsch, Nguyen Ngan Nguyen, Sein Chung, Alina Müller, Zhiyong Wang, Tianshu Lan, Philippe Fontaine, Thomas D. Kühne, Kilwon Cho, Ali Shaygan Nia, Stefan C. B. Mannsfeld, Renhao Dong, Xinliang Feng

“…This stacking configuration facilitates remarkable charge transfer and noticeable n-type doping effects from monolayer 2DPI to MoS2, as corroborated by Raman spectroscopy, photoluminescence measurements, and field-effect transistor (FET) characterizations. Notably, the 2DPI-MoS2 vdWH exhibits an impressive electron mobility of 50 cm2/V·s, signifying a substantial improvement over pristine MoS2 (8 cm2/V·s). …”
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Trifluoromethyl-Substituted Large Band-Gap Polytriphenylamines for Polymer Solar Cells with High Open-Circuit Voltages by Shuwang Yi, Wanyuan Deng, Sheng Sun, Linfeng Lan, Zhicai He, Wei Yang, Bin Zhang

“…The hole mobilities, determined by field-effect transistor characterization, were 2.5 × 10−3 and 1.1 × 10−3 cm2 V−1 S−1 for PTPACF and PTPA2CF, respectively. …”
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Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks by Jinxiang Zhao, Feng Wang, Hanchao Yu, Shengli Zhang, Kuisong Wang, Chang Liu, Jing Wan, Xiaoxin Liang, Yuepeng Yan

“…The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. …”
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Realization of an Electronically Tunable Resistor-Less Floating Inductance Simulator Using VCII by Leila Safari, Gianluca Barile, Davide Colaiuda, Vincenzo Stornelli, Giuseppe Ferri

“…The proposed circuit is designed at a transistor level using 0.18 µm TSMC CMOS parameters and ±0.9 V supply voltage. …”
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Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications by An-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh, Hao-Chung Kuo

“…A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. …”
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Pattern Training, Inference, and Regeneration Demonstration Using On‐Chip Trainable Neuromorphic Chips for Spiking Restricted Boltzmann Machine by Uicheol Shin, Masatoshi Ishii, Atsuya Okazaki, Megumi Ito, Malte J. Rasch, Wanki Kim, Akiyo Nomura, Wonseok Choi, Dooyong Koh, Kohji Hosokawa, Matthew BrightSky, Seiji Munetoh, SangBum Kim

“…A fully silicon‐integrated restricted Boltzmann machine (RBM) with an event‐driven contrastive divergence (eCD) training algorithm is implemented using novel stochastic leaky integrate‐and‐fire (LIF) neuron circuits and six‐transistor/2‐PCM‐resistor (6T2R) synaptic unit cells on 90 nm CMOS technology. …”
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