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8081
Crystallization of polycrystalline silicon thin film by excimer laser annealing
Published 2011“…Enhancing the crystallization of silicon thin film is important for better performance of thin film transistor (TFT). In an attempt to achieve this goal,a fundamental study was carried out to enhance the crystallization of doped silicon thin film (STF) with various types of dopants. …”
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Thesis -
8082
Analytical Modeling and Artificial Neural Network (ANN) Simulation of Current-Voltage Characteristics in Graphene Nanoscroll Based Gas Sensors
Published 2015“…These are typically constructed on a field effect transistor (FET) based structure in which the GNS is employed as the channel between the source and the drain. …”
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8083
Analytical modeling of the sensing parameters for graphene nanoscroll-based gas sensors
Published 2015“…These are typically constructed on a field effect transistor (FET) based structure in which the GNS is employed as the channel between the source and the drain. …”
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8084
Digital logic circuit design using adiabatic approach
Published 2017“…The findings showed that the proposed combinational circuit had less transistor count, lower power dissipation with lower voltage swing as compared to reference adiabatic circuits. …”
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Thesis -
8085
An analytical conductance model for gas detection based on a zigzag carbon nanotube sensor
Published 2020“…In this work, analytical modeling of the semiconducting zigzag carbon nanotube field-effect transistor (ZCNT-FET) based sensor for the detection of gas molecules is demonstrated. …”
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8086
New Resistor-Less Electronically Controllable ±C Simulator Employing VCII, DVCC, and a Grounded Capacitor
Published 2022-01-01“…The proposed circuit is designed at the transistor level in 0.18 µm and ±0.9 V supply voltage. …”
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8087
Modified load‐modulation network with two π‐type high‐pass equivalent λ/4 lines for wideband compact GaN MMIC Doherty power amplifier design
Published 2021-08-01“…For verification, a wideband monolithic microwave integrated circuit DPA was designed and fabricated using a 0.25‐μm gallium nitride based high‐electron‐mobility transistor process. Measurement results show that a saturated power of 41.6–42.4 dBm, a saturated drain efficiency (DE) of 65.3–72%, and a 6‐dB back‐off DE of 45–55.4% are achieved from 4.6 to 5.5 GHz. …”
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8088
Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process
Published 2023-03-01“…We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor (MIS-HFET) without the need for a gate recess process. …”
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8089
Inverter fault diagnosis based on Fourier transform and evolutionary neural network
Published 2023-01-01“…The experimental results show that the proposed algorithm and method of fault feature extraction can effectively detect and locate the insulated-gate bipolar transistor (IGBT) with open circuit (OC) fault in three-phase inverter, and can be applied to online monitoring.…”
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8090
Simulation study of integrated‐gate‐commutated‐thyristor based superconducting hybrid direct current circuit breaker
Published 2023-12-01“…In addition, the IGCT based hybrid DC circuit breaker (IGCT‐HDCCB) is compared with the traditional insulated gate bipolar transistor (IGBT) based hybrid DC circuit breaker (IGBT‐HDCCB) to evaluate which circuit breaker is more suitable for VSC‐MVDC. …”
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8091
Smart automatic COVID door opening system with contactless temperature sensing
Published 2023-12-01“…A passive infrared sensor observes the motion and transmits a signal to the transistor, which in turn gives an interrupt signal to the programmable ATMEGA microcontroller. …”
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8092
A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature Compensation
Published 2023-07-01“…In order to achieve a high-precision BGR circuit, the equation of the nonlinear current has been modified and the high-order term of the current flowing into the nonlinear compensation bipolar junction transistor (NLCBJT) is compensated further. According to the modified equation, two solutions are designed to improve the output accuracy of BGR circuits. …”
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8093
Enhanced Thermoelectric Conversion Efficiency of CVD Graphene with Reduced Grain Sizes
Published 2018-07-01“…Electrical conductivity (σ) and Seebeck coefficients (S) were measured in a vacuum for supported graphene on SiO2/Si FET (Field Effect Transistor) substrates so that the charge carrier density could be changed by applying a gate voltage (VG). …”
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8094
Simulation of a Single-Electron Device Based on Endohedral Fullerene (KI)@C<sub>180</sub>
Published 2023-01-01“…The values of the total energy and the stability diagram of a single-electron transistor based on endohedral fullerene (KI)@C<sub>180</sub> were determined. …”
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8095
On-water surface synthesis of electronically coupled 2D polyimide-MoS2 van der Waals heterostructure
Published 2023-12-01“…This stacking configuration facilitates remarkable charge transfer and noticeable n-type doping effects from monolayer 2DPI to MoS2, as corroborated by Raman spectroscopy, photoluminescence measurements, and field-effect transistor (FET) characterizations. Notably, the 2DPI-MoS2 vdWH exhibits an impressive electron mobility of 50 cm2/V·s, signifying a substantial improvement over pristine MoS2 (8 cm2/V·s). …”
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8096
Trifluoromethyl-Substituted Large Band-Gap Polytriphenylamines for Polymer Solar Cells with High Open-Circuit Voltages
Published 2018-01-01“…The hole mobilities, determined by field-effect transistor characterization, were 2.5 × 10−3 and 1.1 × 10−3 cm2 V−1 S−1 for PTPACF and PTPA2CF, respectively. …”
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8097
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Published 2022-02-01“…The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. …”
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8098
Realization of an Electronically Tunable Resistor-Less Floating Inductance Simulator Using VCII
Published 2022-01-01“…The proposed circuit is designed at a transistor level using 0.18 µm TSMC CMOS parameters and ±0.9 V supply voltage. …”
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8099
Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
Published 2023-08-01“…A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. …”
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8100
Pattern Training, Inference, and Regeneration Demonstration Using On‐Chip Trainable Neuromorphic Chips for Spiking Restricted Boltzmann Machine
Published 2022-08-01“…A fully silicon‐integrated restricted Boltzmann machine (RBM) with an event‐driven contrastive divergence (eCD) training algorithm is implemented using novel stochastic leaky integrate‐and‐fire (LIF) neuron circuits and six‐transistor/2‐PCM‐resistor (6T2R) synaptic unit cells on 90 nm CMOS technology. …”
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