Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode by Batyrbek Alimkhanuly, Sanghoek Kim, Lok-won Kim, Seunghyun Lee

“…As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. …”
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Comparison of silicon drift detectors made by Amptek and PNDetectors in application to the PHA system for W7-X by Krawczyk Natalia, Kaczmarczyk Jacek, Kubkowska Monika, Ryć Leszek

“…Each one is equipped with a field-effect transistor (FET). In the detector from Amptek, the FET is mounted separately, while in the detector from PNDetector, the FET is integrated on the chip. …”
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A Dual-Mode InGaP/GaAs HBT Power Amplifier Using a Low-Loss Parallel Power-Combining Transformer with IMD3 Cancellation Method by Kyutaek Oh, Hyunjin Ahn, Ilku Nam, Hui Dong Lee, Bonghyuk Park, Ockgoo Lee

“…A dual mode InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) using a parallel power-combining transformer (PCT) is presented herein. …”
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Effective radiation dose of a MSCT, two CBCT and one conventional radiography device in the ankle region by Juha Koivisto, Timo Kiljunen, Nils Kadesjö, Xie‐Qi Shi, Jan Wolff

“…Methods Organ dose measurements were performed using 20 metal oxide field effect transistor (MOSFET) dosimeters that were placed in a custom made anthropomorphic RANDO ankle phantom. …”
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Three-Phase Multilevel Inverter Using Selective Harmonic Elimination with Marine Predator Algorithm by Nancy Riad, Wagdy Anis, Ahmed Elkassas, Abd El-Wahab Hassan

“…The model of power loss of three-phase 7L-MLI-CHB using the silicon metal-oxide-semiconductor field-effect transistor (MOSFET) is obtained according to the modulation technique. …”
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Thermal Performance Optimization of Integrated Microchannel Cooling Plate for IGBT Power Module by Hanyang Xu, Jiabo Huang, Wenchao Tian, Zhao Li

“…In high-integration electronic components, the insulated-gate bipolar transistor (IGBT) power module has a high working temperature, which requires reasonable thermal analysis and a cooling process to improve the reliability of the IGBT module. …”
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Design Improvements on Fast, High-Order, Incremental Sigma-Delta ADCs for Low-Noise Stacked CMOS Image Sensors by Luis Miguel Carvalho Freitas, Fernando Morgado-Dias

“…Throughout the extensive parametric transistor-level simulations, the readout path produced 1.2% non-linearity, with a competitive saturation capacity (6.5 ke−) pixel. …”
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A 110 GHz Feedback Amplifier Design Based on Quasi-Linear Analysis by Ruibing Dong, Yiheng Song, Yang Xing

“…The power gain and output power of millimeter-wave (mm-Wave) and terahertz (THz) amplifiers are critical performance metrics, particularly when the operating frequencies of amplifiers are near to the maximum oscillator frequency (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>f</mi><mrow><mi>m</mi><mi>a</mi><mi>x</mi></mrow></msub></mrow></semantics></math></inline-formula>) of the transistor. This paper presents the design of a 110 GHz amplifier based on the quasi-linear method. …”
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Research on Typical Design of Wind-Solar Coupled Hydrogen Production System by Xiang SUN, Chengliang LIU, Xia NIU, Luyao ZHAO

“…Both thyristor and insulated gate bipolar transistor (IGBT) power rectifiers have their own advantages, and IGBT rectification is gradually being applied in engineering practice. …”
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Developing an Active Microfluidic Pump and Mixer Driven by AC Field-Effect-Mediated Induced-Charge Electro-Osmosis of Metal–Dielectric Janus Micropillars: Physical Perspective and... by Weiyu Liu, Ye Tao, Yaoyao Chen, Zhenyou Ge, Junshuo Chen, Yanbo Li

“…We coin the term “Janus AC flow field-effect transistor (Janus AC-FFET)” to describe this interesting physical phenomenon. …”
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Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory by Yohan Kim, Soyoung Kim

“…Based on the proposed technique, the predictive model achieves high accuracy in the current 176-layer V-NAND technology, and it also provides high scalability with respect to GIDL transistor geometries, temperatures, supply voltages, variabilities, and the number of stacking layers. …”
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1 V Electronically Tunable Differential Difference Current Conveyors Using Multiple-Input Operational Transconductance Amplifiers by Montree Kumngern, Fabian Khateb, Tomasz Kulej, Lukas Langhammer

“…The MI-OTA is realized using the multiple-input bulk-driven Metal Oxide Semiconductor transistor (MIBD-MOST) technique to achieve minimum power consumption. …”
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Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias by QIU Yiwu, GUO Fengqi, YIN Yanan, ZHANG Pingwei, ZHOU Xinjie

“…BackgroundGallium nitride (GaN) power devices have garnered attention in the anti-irradiation field owing to their excellent performance.PurposeThis study aims to explore the anti-γ-ray damage ability of gallium nitride power devices and clarify the mechanism of radiation degradation.MethodsFirstly, the domestically produced commercial NP20G65D6 P-GaN gate enhanced AlGaN/GaN High Electron Mobility Transistor (HEMT) device was taken as test sample. Then, 60Co γ-ray source with different irradiation doses of 0.3 Mrad (Si), 0.6 Mrad (Si), and 1.0 Mrad (Si), respectively, was employed to conduct total dose irradiation experiments under different bias (ON-state, OFF-state, and GND-state) conditions and annealing tests at different temperatures for enhanced AlGaN/GaN HEMT devices. …”
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Analisa Perbandingan Pengasutan Motor Induksi 3 Fasa Soft Starter IGBT Berbasis Sine-Triangle dan Sine-Sawtooth PWM Menggunakan Matlab Simulink by Miftakhul Umam Ulil Anwar, Dedi Nugroho, Agus Adhi Nugroho

“…The Soft Starter system in this study uses 6 Insulated Gate Bipolar Transistor (IGBT)power electronics switches which are controlled using a sine-triangle PWM and sine - Sawtooth PWM. …”
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Effect of Non-Ideal Cross-Sectional Shape on the Performance of Nanosheet-Based FETs by Fengyu Kuang, Cong Li, Haokun Li, Hailong You, M. Jamal Deen

“…This research provides development guidelines for process and structure optimization in advanced transistor technology nodes.…”
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Monolithic 3D Inverter with Interface Charge: Parameter Extraction and Circuit Simulation by Tae Jun Ahn, Sung Kyu Lim, Yun Seop Yu

“…Logic circuits, such as inverters (INVs), ring oscillators (ROs), a 2 to 1 multiplexer (MUX), and D flip-flop and 6-transistor static random-access memory (6T SRAM) containing M3DINVs, were simulated using the extracted model parameters, and simulation results both with and without interface trap charges were compared. …”
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Pseudo-Static Gain Cell of Embedded DRAM for Processing-in-Memory in Intelligent IoT Sensor Nodes by Subin Kim, Jun-Eun Park

“…The proposed eDRAM cell consists of a two-transistor (2T) gain cell with a pseudo-static leakage compensation that maintains stored data without charge loss issue. …”
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Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique by Shengli Zhang, Jing Wan, Jinxiang Zhao, Zhe Yang, Yuepeng Yan, Xiaoxin Liang

“…This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for a wideband system. …”
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New Power MOSFET with Beyond-1D-Limit <i>R</i>_SP-<i>BV</i> Trade-Off and Superior Reverse Recovery Characteristics by Meng Zhang, Baikui Li, Jin Wei

“…The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional “silicon limit” (1D-limit) in the trade-off relationship between specific on-resistance (<i>R</i>_SP) and breakdown voltage (<i>BV</i>). …”
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A 7.5–9 GHz GaAs Two-Channel Multi-Function Chip by Shancheng Zhou, Shouli Zhou, Jingle Zhang, Jianmin Wu, Haiqing Yang, Zhiyu Wang

“…Based on the 0.5 &#956;m GaAs enhancement/depletion (E/D) Pseudomorphic High Electron Mobility Transistor (pHEMT) process, a 7.5&#8211;9 GHz two-channel amplitude phase control multi-function chip (MFC) was developed successfully. …”
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