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8161
Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode
Published 2020-08-01“…As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. …”
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8162
Comparison of silicon drift detectors made by Amptek and PNDetectors in application to the PHA system for W7-X
Published 2016-12-01“…Each one is equipped with a field-effect transistor (FET). In the detector from Amptek, the FET is mounted separately, while in the detector from PNDetector, the FET is integrated on the chip. …”
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8163
A Dual-Mode InGaP/GaAs HBT Power Amplifier Using a Low-Loss Parallel Power-Combining Transformer with IMD3 Cancellation Method
Published 2021-07-01“…A dual mode InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) using a parallel power-combining transformer (PCT) is presented herein. …”
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8164
Effective radiation dose of a MSCT, two CBCT and one conventional radiography device in the ankle region
Published 2015-01-01“…Methods Organ dose measurements were performed using 20 metal oxide field effect transistor (MOSFET) dosimeters that were placed in a custom made anthropomorphic RANDO ankle phantom. …”
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8165
Three-Phase Multilevel Inverter Using Selective Harmonic Elimination with Marine Predator Algorithm
Published 2021-02-01“…The model of power loss of three-phase 7L-MLI-CHB using the silicon metal-oxide-semiconductor field-effect transistor (MOSFET) is obtained according to the modulation technique. …”
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8166
Thermal Performance Optimization of Integrated Microchannel Cooling Plate for IGBT Power Module
Published 2023-07-01“…In high-integration electronic components, the insulated-gate bipolar transistor (IGBT) power module has a high working temperature, which requires reasonable thermal analysis and a cooling process to improve the reliability of the IGBT module. …”
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8167
Design Improvements on Fast, High-Order, Incremental Sigma-Delta ADCs for Low-Noise Stacked CMOS Image Sensors
Published 2021-08-01“…Throughout the extensive parametric transistor-level simulations, the readout path produced 1.2% non-linearity, with a competitive saturation capacity (6.5 ke−) pixel. …”
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8168
A 110 GHz Feedback Amplifier Design Based on Quasi-Linear Analysis
Published 2023-09-01“…The power gain and output power of millimeter-wave (mm-Wave) and terahertz (THz) amplifiers are critical performance metrics, particularly when the operating frequencies of amplifiers are near to the maximum oscillator frequency (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>f</mi><mrow><mi>m</mi><mi>a</mi><mi>x</mi></mrow></msub></mrow></semantics></math></inline-formula>) of the transistor. This paper presents the design of a 110 GHz amplifier based on the quasi-linear method. …”
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8169
Research on Typical Design of Wind-Solar Coupled Hydrogen Production System
Published 2023-05-01“…Both thyristor and insulated gate bipolar transistor (IGBT) power rectifiers have their own advantages, and IGBT rectification is gradually being applied in engineering practice. …”
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8170
Developing an Active Microfluidic Pump and Mixer Driven by AC Field-Effect-Mediated Induced-Charge Electro-Osmosis of Metal–Dielectric Janus Micropillars: Physical Perspective and...
Published 2023-07-01“…We coin the term “Janus AC flow field-effect transistor (Janus AC-FFET)” to describe this interesting physical phenomenon. …”
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8171
Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory
Published 2023-01-01“…Based on the proposed technique, the predictive model achieves high accuracy in the current 176-layer V-NAND technology, and it also provides high scalability with respect to GIDL transistor geometries, temperatures, supply voltages, variabilities, and the number of stacking layers. …”
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8172
1 V Electronically Tunable Differential Difference Current Conveyors Using Multiple-Input Operational Transconductance Amplifiers
Published 2024-02-01“…The MI-OTA is realized using the multiple-input bulk-driven Metal Oxide Semiconductor transistor (MIBD-MOST) technique to achieve minimum power consumption. …”
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8173
Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias
Published 2023-11-01“…BackgroundGallium nitride (GaN) power devices have garnered attention in the anti-irradiation field owing to their excellent performance.PurposeThis study aims to explore the anti-γ-ray damage ability of gallium nitride power devices and clarify the mechanism of radiation degradation.MethodsFirstly, the domestically produced commercial NP20G65D6 P-GaN gate enhanced AlGaN/GaN High Electron Mobility Transistor (HEMT) device was taken as test sample. Then, 60Co γ-ray source with different irradiation doses of 0.3 Mrad (Si), 0.6 Mrad (Si), and 1.0 Mrad (Si), respectively, was employed to conduct total dose irradiation experiments under different bias (ON-state, OFF-state, and GND-state) conditions and annealing tests at different temperatures for enhanced AlGaN/GaN HEMT devices. …”
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8174
Analisa Perbandingan Pengasutan Motor Induksi 3 Fasa Soft Starter IGBT Berbasis Sine-Triangle dan Sine-Sawtooth PWM Menggunakan Matlab Simulink
Published 2022-10-01“…The Soft Starter system in this study uses 6 Insulated Gate Bipolar Transistor (IGBT)power electronics switches which are controlled using a sine-triangle PWM and sine - Sawtooth PWM. …”
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8175
Effect of Non-Ideal Cross-Sectional Shape on the Performance of Nanosheet-Based FETs
Published 2023-08-01“…This research provides development guidelines for process and structure optimization in advanced transistor technology nodes.…”
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8176
Monolithic 3D Inverter with Interface Charge: Parameter Extraction and Circuit Simulation
Published 2021-12-01“…Logic circuits, such as inverters (INVs), ring oscillators (ROs), a 2 to 1 multiplexer (MUX), and D flip-flop and 6-transistor static random-access memory (6T SRAM) containing M3DINVs, were simulated using the extracted model parameters, and simulation results both with and without interface trap charges were compared. …”
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8177
Pseudo-Static Gain Cell of Embedded DRAM for Processing-in-Memory in Intelligent IoT Sensor Nodes
Published 2022-06-01“…The proposed eDRAM cell consists of a two-transistor (2T) gain cell with a pseudo-static leakage compensation that maintains stored data without charge loss issue. …”
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8178
Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique
Published 2022-02-01“…This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for a wideband system. …”
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8179
New Power MOSFET with Beyond-1D-Limit <i>R</i><sub>SP</sub>-<i>BV</i> Trade-Off and Superior Reverse Recovery Characteristics
Published 2020-06-01“…The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional “silicon limit” (1D-limit) in the trade-off relationship between specific on-resistance (<i>R</i><sub>SP</sub>) and breakdown voltage (<i>BV</i>). …”
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8180
A 7.5–9 GHz GaAs Two-Channel Multi-Function Chip
Published 2019-04-01“…Based on the 0.5 μm GaAs enhancement/depletion (E/D) Pseudomorphic High Electron Mobility Transistor (pHEMT) process, a 7.5–9 GHz two-channel amplitude phase control multi-function chip (MFC) was developed successfully. …”
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