Automated probe technique for robust and high-throughput electrical characterization and measurements by Chenardy, Frederick Hubert

“…In this research, we seek to explore and implement computer vision to automate an electrical probe technique to enhance the robustness and throughput of electrical characterization and measurements, such as conductivity measurement using the four-point probe method and the field-effect transistor (FET) transfer measurement. As a subset of artificial intelligence (AI), computer vision is a highly powerful tool which gives a computer system the ability to understand, process and recognize features within digital images or videos. …”
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Immobilization of artificial lipid membranes on one dimensional nanostructures and the detection of protein-mediated transport by Preeti Vikas Palkar.

“…These nanostructures were used as Field Electric Transistor (FET)-based sensors to detect the ability of an ionophore, Calcimycin to specifically transported calcium ions (Ca2+) across the membrane. …”
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Analysis and design of high speed low power 4-bit ALU by Huang, Si Wei.

“…At second stage, from transistor level the student built up logic gates like INV, AND, OR, TG, XOR, MUX. …”
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Smart ADC for bio-sensor interface by Chen, Liang.

“…Cadence behavior-level and transistor-level simulation tools will be used for circuit and system verification. …”
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System analysis and design of dual-mode digitally controlled dc-dc converters by Han, Dong.

“…To the best of our knowledge, this system model is the first model which provides the minimum ripple dither code [4], [5] with dynamic resolution and supports hybrid-mode simulation (co-simulation of the system level mode and transistor level circuit). Based on this model, an optimized system design of the dual-mode converter with high power efficiency, wide loading range and small output ripple is proposed and validated. …”
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Enhanced low-power high-speed probabilistic adders for error-toerant application by Zhu, Ning

“…When “imperfect” algorithms and circuit structures are employed, a substantial yield for an error-tolerant digital circuit, in terms of power consumption, speed performance, and transistor count, can be realized. An adder is the basic digital circuit component, which is widely used in many areas. …”
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Ultra low power data converters for implantable medical devices by Tang, Howard

“…Therefore, this ADC employs the highest degree of simplicity in the architecture to minimize the transistor counts, thus, the source of leakage. In addition, symmetrical layout technique is widely adopted to minimize metal routing; and hence, the parasitic power consumption. …”
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Current and electric-field driven skyrmion dynamics for magnetic memory applications by Fook, Hiu Tung

“…This phenomenon can be utilized for a skyrmion transistor and skyrmion racetrack memory which are proposed in this thesis. …”
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Resistor-less low dropout voltage regulator by Lee, Han Jian

“…The LDOVRs proposed mainly consists of an EA with an embedded Voltage Reference and an output stage that consist of a power transistor. The report proposes two main design, a LDOVR using a self-cascode structure at the output and a Resistor-less LDOVR. …”
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Diverse and robust molecular algorithms using reprogrammable DNA self-assembly by Woods, D, Doty, D, Myhrvold, C, Hui, J, Zhou, F, Yin, P, Winfree, E

“…However, many information technologies exhibit a complexity threshold—such as the minimum transistor count needed for a general-purpose computer—beyond which the power of a reprogrammable system increases qualitatively, and it has been unclear whether the biophysics of DNA self-assembly allows that threshold to be exceeded. …”

Second law considerations in fourier heat conduction of a lattice chain in relation to intermolecular potentials by Christopher, G.J.

“…We also note that the sinusoidal temperature profile generated suggests that thermal integrated circuits with several thermal P-N junctions may be constructed, opening a way to create more complex thermal transistor circuits. A stationary principle is proposed for regions that violate the Fourier principle Jq:rT � 0, where Jq is the heat current vector and T the temperature.…”
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In vivo dosimetry using MOSkin detector during Cobalt-60 high-dose-rate (HDR) brachytherapy of skin cancer by Jamalludin, Zulaikha, Jong, Wei Loong, Ho, Gwo Fuang, Rosenfeld, Anatoly B., Ung, Ngie Min

“…The MOSkin, a metal–oxide semiconductor field-effect transistor based detector, is suitable for evaluating skin dose due to its water equivalent depth (WED) of 0.07 mm. …”

Design of 8-Bit CMOS Digital to Analog Converter by Tan, Gim Heng

“…This circuit is simulated by using Tanner Tools Pro software, where the SCNA20um CMOS process with level-2 transistor parameters is used. The simulation results of the designed DAC shows a conversion rate of 7.2Mhz, a lNL of ±1.36 LSB, a DNL of ±D.05 LSB and a glitch energy of 30p V s with the power supply of ± 5V. …”
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Synthesis and Characterisation of Carbon Nanotubes Prepared Using Pulsed Laser Ablation Deposition Technique by Ismail, Ismayadi

“…Carbon nanotubes (CNTs) has been the focus of a virtual storm research, both to better understand its unique properties and to harness its potential in commercial applications such as hydrogen storage, atomic force microscopy probe, microelectronic transistor, electrical field emitter of flat panel display. …”
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Design And Development Of Hardware-In-The-Loop Test Equipment For Vehicle Instrument Cluster by Jamaludin, Wan Shahmisufi Wan

“…The mean of error as shown in Moving Range also improved by 94.38% from 0.99 to 0.0556 BJT transistor is selected as the switching element of digital output generator for tell-tales, due to its capability of achieving faster rise time at 791.79 μs with the lowest cost of purchase at RM 1.62 per unit. …”
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Designing memory cells with a novel approaches based on a new multiplexer in QCA Technology by Majeed, Ali Hussien

“…Transistor-based CMOS technology has many drawbacks such that it cannot continue to follow the scaling of Moore’s law in the near future. …”
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Modeling and characterization of majority (MAJ) type single-elaectron full adder using SIMON by Hashim, Abdul Manaf, Murugiah, Gugeneshwaran

“…Transistor elektron tunggal (SET) adalah salah satu peranti nano–elektronik bagi menggantikan CMOS yang mana dibezakan dengan saiz perantinya yang sangat kecil dan pelesapan kuasa yang rendah. …”

A computer aided design software module for clock tree synthesis in very large scale integration design by Chew, Eik Wee

“…With the evolution of Very Large Scale Integration (VLSI) fabrication technology, circuit size has grown and line width has decreased. In effect, the transistor transit time and the time to drive signal lines across chips have also decreased. …”
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GateLESS-FET pH sensor fabricated on undoped-AlGaN/GaN HEMT structure by Zainal Abidin, Mastura Shafinaz, Abd Rahman, Shaharin Fadzli, Hashim, Abdul Manaf, Abdul Rahman, Abdul Rahim

“…Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. …”

Optimization of high-k composite dielectric materials of variable oxide thickness tunnel barrier for nonvolatile memory by Hamid, F. A., Hamzah, A., Ezaila Alias, N., Ismail, R.

“…The VARIOT optimization is conducted using 3-Dimensional (3D) Silicon Nanowire Field-Effect-Transistor (SiNWFET) device structure and simulated in TCAD Simulation tools. …”
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