Scaling challenges of floating gate non-volatile memory and graphene as the future flash memory device: A review by Hamzah, Afiq, Ahmad, Hilman, Tan, Michael Loong Peng, Alias, N. Ezaila, Zaharah, Johari, Razali, Ismail

“…This study comprehensively reviewed the challenges related to the floating gate transistor for each component of the gate stack that consists of the tunnel oxide layer, inter-poly dielectric (IPD) oxide layer and poly-Si floating gate until reaching its bottleneck as the floating gate thickness scale to 7 nm. …”

Analytical solution of amplifier-antenna system's impedance matching requirement for reliable microwave transmitter by Zubir, Farid, Gardner, Peter, A. Rahim, Mohamad Kamal, Ayop, Osman, Samsuri, Noor Asmawati

“…This matching requirement is specific for only a given transistor and in this work by incorporating bandstop filters made of resonant stubs it has been possible to filter harmonic power up to 3rd harmonic. …”
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An FPGA-Based Training System for a 1T1R Memristor Array With 500 nS Conductance Resolution Limit by Liujie Li, Chuantong Cheng, Beiju Huang, Ke Ding, Yuxin Li, Ganggang Guo

“…However, the existing commercial semiconductor parameter analyzers are not capable of training one-transistor-one-memristor (1T1R) memristor arrays. In this research, we propose a training system based on a field programmable gate array (FPGA) to precisely modulate the conductance states of the 1T1R memristor arrays. …”
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A Multimodal Sensing Device for Simultaneous Measurement of Dissolved Oxygen and Hydrogen Ions by Monolithic Integration of FET-Based Sensors by Toshihiko Noda, Sylvia Mei Lin Loo, Yoshiko Noda, Daisuke Akai, Takeshi Hizawa, Yong-Joon Choi, Kazuhiro Takahashi, Kazuaki Sawada

“…In this paper, we present a method for investigating the dissolved oxygen-sensing properties of SnO₂ thin films in solutions by fabricating a SnO₂-gate field-effect transistor (FET). A similarly structured hydrogen ion-sensitive silicon nitride (Si₃N₄)-gate FET was fabricated using the same method. …”
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Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider <i>V_th</i> Window in 3D NAND Flash Using a Machine-Learning Method by Kihoon Nam, Chanyang Park, Jun-Sik Yoon, Hyeok Yun, Hyundong Jang, Kyeongrae Cho, Ho-Jung Kang, Min-Sang Park, Jaesung Sim, Hyun-Chul Choi, Rock-Hyun Baek

“…Therefore, the developed ML technique can be applied to optimize cell transistor processes by determining the material properties of the CTN in 3D NAND Flash.…”
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Side-Chain-Assisted Transition of Conjugated Polymers from a Semiconductor to Conductor and Comparison of Their NO₂ Sensing Characteristics by Yejin Ahn, Sooji Hwang, Hyojin Kye, Min Seon Kim, Wi Hyoung Lee, Bong-Gi Kim

“…Upon application to a field-effect transistor sensor for <b>PTQ-T</b> and resistive sensor for <b>PTQ-TEG</b>, <b>PTQ-TEG</b> exhibited a better NO₂ detection capability with faster signal recovery characteristics than <b>PTQ-T</b>. …”
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DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection by Nathalie B. F. Almeida, Thiago A. S. L. Sousa, Viviane C. F. Santos, Camila M. S. Lacerda, Thais G. Silva, Rafaella F. Q. Grenfell, Flavio Plentz, Antero S. R. Andrade

“…Furthermore, graphene field-effect transistor devices functionalized with ZIKV60 exhibit an evident identification of NS1 protein diluted in human serum. …”
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Highly Efficient, Non-Covalent Functionalization of CVD-Graphene via Novel Pyrene-Based Supporter Construct by Misbah Shahzadi, Sobia Nisar, Deok-Kee Kim, Nasir Sarwar, Aamir Rasheed, Waqas Ahmad, Amir Muhammad Afzal, Muhammad Imran, Mohammed Ali Assiri, Zafar M. Shahzad, Ghulam Dastgeer

“…The construct was synthesized using the solid-phase peptide synthesis (SPPS) method and utilized to functionalize the graphene-channel-based field-effect transistor (FET) device via non-covalent π−π stacking interaction. …”
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Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor by Durgadevi Elamaran, Yuya Suzuki, Hiroaki Satoh, Amit Banerjee, Norihisa Hiromoto, Hiroshi Inokawa

“…Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), pn-junction diode (with p-body doping and without doping), and resistors (n⁺ or p⁺ single crystalline Si and n⁺ polycrystalline Si) were designed and characterized for its possible use in 1-THz antenna-coupled bolometers. …”
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An X-Band High-Accuracy GaAs Multifunction Chip With Amplitude and Phase Control by Yang Yuan, Jialong Zeng, Desheng Zhang, Jiaxuan Li, Ding He, Cheng Tan, Zhongjun Yu

“…The proposed MFC is fabricated in 0.15-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process. In the range of 8&#x2013;11 GHz, the measured maximum root-mean-square (RMS) amplitude error of the MFC is less than 0.28 dB, and the maximum RMS phase error is less than 3.3&#x00B0;. …”
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Advanced Reinforcement Learning Solution for Clock Skew Engineering: Modified Q-Table Update Technique for Peak Current and IR Drop Minimization by Sayed Aresh Beheshti-Shirazi, Najmeh Nazari, Kevin Immanuel Gubbi, Banafsheh Saber Latibari, Setareh Rafatirad, Houman Homayoun, Avesta Sasan, P. D. Sai Manoj

“…The first experiment results indicate a 35&#x0025; reduction in peak current and a significant reduction in IR decrease (from package to transistor) in the chosen benchmarks. The second experiment modified the Q-table renewing technique, which resulted in another additional 10&#x0025; improvement compared to the first experiment. …”
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Detecting the Bitterness of Milk-Protein-Derived Peptides Using an Electronic Tongue by Arijit Nath, Burak Atilla Eren, John-Lewis Zinia Zaukuu, András Koris, Klára Pásztorné-Huszár, Emőke Szerdahelyi, Zoltan Kovacs

“…The level of bitterness of the peptides after microbial hydrolysis of LMPC-T (LMPC-T-F and LMPC-T-F_G) was evaluated using a potentiometric E-tongue equipped with a sensor array that had seven chemically modified field-effect transistor sensors. The results of the measurements were evaluated using principal component analysis (PCA), and subsequently, a classification of the models was built using the linear discriminant analysis (LDA) method. …”
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Paper-Cut Flexible Multifunctional Electronics Using MoS₂ Nanosheet by Dong Yang, Hao Wang, Shenglin Luo, Changning Wang, Sheng Zhang, Shiqi Guo

“…In order to obtain a large area of MoS₂ with excellent performance, we use a metal-assisted exfoliation method to transfer MoS₂, followed by fabricating a field effect transistor to characterize its excellent electrical properties. …”
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A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al₂O₃ Gate Stacks by Lixiang Chen, Zhiqi Lu, Chaowei Fu, Ziqiang Bi, Miaoling Que, Jiawei Sun, Yunfei Sun

“…In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. …”
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Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp by Yijun Shi, Zhiyuan He, Yun Huang, Zongqi Cai, Yiqiang Chen, Chang Liu, Chao Liu, Wanjun Chen, Ruize Sun, Guoguang Lu

“…This work carried out the experimental investigation and model analysis on a GaN electrostatic discharge (ESD) clamp, which features a discharge high electron mobility transistor (HEMT) and a voltage divider formed by a lateral field effect rectifier (L-FER) chain and a resistor in series. …”
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Shape- and Element-Sensitive Reconstruction of Periodic Nanostructures with Grazing Incidence X-ray Fluorescence Analysis and Machine Learning by Anna Andrle, Philipp Hönicke, Grzegorz Gwalt, Philipp-Immanuel Schneider, Yves Kayser, Frank Siewert, Victor Soltwisch

“…The characterization of nanostructured surfaces with sensitivity in the sub-nm range is of high importance for the development of current and next-generation integrated electronic circuits. Modern transistor architectures for, e.g., FinFETs are realized by lithographic fabrication of complex, well-ordered nanostructures. …”
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A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles by Borislav Dimitrov, Khaled Hayatleh, Steve Barker, Gordana Collier, Suleiman Sharkh, Andrew Cruden

“…A transformer-less Buck-Boost direct current&#8722;direct current (DC&#8722;DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. …”
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An Improved Voltage Clamp Circuit Suitable for Accurate Measurement of the Conduction Loss of Power Electronic Devices by Qiuping Yu, Zhibin Zhao, Peng Sun, Bin Zhao, Yumeng Cai

“…In this paper, the conventional drain–source voltage clamp circuit based on a transistor is comprehensively investigated by theoretical analysis, simulations, and experiments. …”
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Flexible, ultrathin bioelectronic materials and devices for chronically stable neural interfaces by Lianjie Zhou, Zhongyuan Wu, Mubai Sun, Jaejin Park, Mengdi Han, Ming Wang, Junsheng Yu, Zengfeng Di, Yongfeng Mei, Wubin Bai, Xinge Yu, Ki Jun Yu, Enming Song

“…Next, active interfaces which utilize inorganic/organic semiconductor‐enabled devices are reviewed, highlighting various working principles of recording mechanisms including capacitively and conductively coupled sensing enabled by high transistor matrices at high spatiotemporal resolution. …”
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GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI by Stefan Mönch, Michael Basler, Richard Reiner, Fouad Benkhelifa, Philipp Döring, Matthias Sinnwell, Stefan Müller, Michael Mikulla, Patrick Waltereit, Rüdiger Quay

“…The effect of the isolation approaches on increased output and input transistor capacitances, influencing the switching behavior and switching loss, is calculated and compared for different voltage classes (below 100 V to 600 V-class). …”
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