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8221
Scaling challenges of floating gate non-volatile memory and graphene as the future flash memory device: A review
Published 2019“…This study comprehensively reviewed the challenges related to the floating gate transistor for each component of the gate stack that consists of the tunnel oxide layer, inter-poly dielectric (IPD) oxide layer and poly-Si floating gate until reaching its bottleneck as the floating gate thickness scale to 7 nm. …”
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8222
Analytical solution of amplifier-antenna system's impedance matching requirement for reliable microwave transmitter
Published 2020“…This matching requirement is specific for only a given transistor and in this work by incorporating bandstop filters made of resonant stubs it has been possible to filter harmonic power up to 3rd harmonic. …”
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8223
An FPGA-Based Training System for a 1T1R Memristor Array With 500 nS Conductance Resolution Limit
Published 2023-01-01“…However, the existing commercial semiconductor parameter analyzers are not capable of training one-transistor-one-memristor (1T1R) memristor arrays. In this research, we propose a training system based on a field programmable gate array (FPGA) to precisely modulate the conductance states of the 1T1R memristor arrays. …”
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8224
A Multimodal Sensing Device for Simultaneous Measurement of Dissolved Oxygen and Hydrogen Ions by Monolithic Integration of FET-Based Sensors
Published 2022-09-01“…In this paper, we present a method for investigating the dissolved oxygen-sensing properties of SnO<sub>2</sub> thin films in solutions by fabricating a SnO<sub>2</sub>-gate field-effect transistor (FET). A similarly structured hydrogen ion-sensitive silicon nitride (Si<sub>3</sub>N<sub>4</sub>)-gate FET was fabricated using the same method. …”
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8225
Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider <i>V<sub>th</sub></i> Window in 3D NAND Flash Using a Machine-Learning Method
Published 2022-05-01“…Therefore, the developed ML technique can be applied to optimize cell transistor processes by determining the material properties of the CTN in 3D NAND Flash.…”
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8226
Side-Chain-Assisted Transition of Conjugated Polymers from a Semiconductor to Conductor and Comparison of Their NO<sub>2</sub> Sensing Characteristics
Published 2023-04-01“…Upon application to a field-effect transistor sensor for <b>PTQ-T</b> and resistive sensor for <b>PTQ-TEG</b>, <b>PTQ-TEG</b> exhibited a better NO<sub>2</sub> detection capability with faster signal recovery characteristics than <b>PTQ-T</b>. …”
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8227
DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection
Published 2022-09-01“…Furthermore, graphene field-effect transistor devices functionalized with ZIKV60 exhibit an evident identification of NS1 protein diluted in human serum. …”
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8228
Highly Efficient, Non-Covalent Functionalization of CVD-Graphene via Novel Pyrene-Based Supporter Construct
Published 2023-01-01“…The construct was synthesized using the solid-phase peptide synthesis (SPPS) method and utilized to functionalize the graphene-channel-based field-effect transistor (FET) device via non-covalent π−π stacking interaction. …”
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8229
Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor
Published 2020-07-01“…Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), pn-junction diode (with p-body doping and without doping), and resistors (n<sup>+</sup> or p<sup>+</sup> single crystalline Si and n<sup>+</sup> polycrystalline Si) were designed and characterized for its possible use in 1-THz antenna-coupled bolometers. …”
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8230
An X-Band High-Accuracy GaAs Multifunction Chip With Amplitude and Phase Control
Published 2023-01-01“…The proposed MFC is fabricated in 0.15-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process. In the range of 8–11 GHz, the measured maximum root-mean-square (RMS) amplitude error of the MFC is less than 0.28 dB, and the maximum RMS phase error is less than 3.3°. …”
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8231
Advanced Reinforcement Learning Solution for Clock Skew Engineering: Modified Q-Table Update Technique for Peak Current and IR Drop Minimization
Published 2023-01-01“…The first experiment results indicate a 35% reduction in peak current and a significant reduction in IR decrease (from package to transistor) in the chosen benchmarks. The second experiment modified the Q-table renewing technique, which resulted in another additional 10% improvement compared to the first experiment. …”
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8232
Detecting the Bitterness of Milk-Protein-Derived Peptides Using an Electronic Tongue
Published 2022-06-01“…The level of bitterness of the peptides after microbial hydrolysis of LMPC-T (LMPC-T-F and LMPC-T-F<sub>G</sub>) was evaluated using a potentiometric E-tongue equipped with a sensor array that had seven chemically modified field-effect transistor sensors. The results of the measurements were evaluated using principal component analysis (PCA), and subsequently, a classification of the models was built using the linear discriminant analysis (LDA) method. …”
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8233
Paper-Cut Flexible Multifunctional Electronics Using MoS<sub>2</sub> Nanosheet
Published 2019-06-01“…In order to obtain a large area of MoS<sub>2</sub> with excellent performance, we use a metal-assisted exfoliation method to transfer MoS<sub>2</sub>, followed by fabricating a field effect transistor to characterize its excellent electrical properties. …”
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8234
A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al<sub>2</sub>O<sub>3</sub> Gate Stacks
Published 2024-01-01“…In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. …”
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8235
Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp
Published 2022-01-01“…This work carried out the experimental investigation and model analysis on a GaN electrostatic discharge (ESD) clamp, which features a discharge high electron mobility transistor (HEMT) and a voltage divider formed by a lateral field effect rectifier (L-FER) chain and a resistor in series. …”
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8236
Shape- and Element-Sensitive Reconstruction of Periodic Nanostructures with Grazing Incidence X-ray Fluorescence Analysis and Machine Learning
Published 2021-06-01“…The characterization of nanostructured surfaces with sensitivity in the sub-nm range is of high importance for the development of current and next-generation integrated electronic circuits. Modern transistor architectures for, e.g., FinFETs are realized by lithographic fabrication of complex, well-ordered nanostructures. …”
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8237
A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles
Published 2020-02-01“…A transformer-less Buck-Boost direct current−direct current (DC−DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. …”
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8238
An Improved Voltage Clamp Circuit Suitable for Accurate Measurement of the Conduction Loss of Power Electronic Devices
Published 2021-06-01“…In this paper, the conventional drain–source voltage clamp circuit based on a transistor is comprehensively investigated by theoretical analysis, simulations, and experiments. …”
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8239
Flexible, ultrathin bioelectronic materials and devices for chronically stable neural interfaces
Published 2023-12-01“…Next, active interfaces which utilize inorganic/organic semiconductor‐enabled devices are reviewed, highlighting various working principles of recording mechanisms including capacitively and conductively coupled sensing enabled by high transistor matrices at high spatiotemporal resolution. …”
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8240
GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI
Published 2023-06-01“…The effect of the isolation approaches on increased output and input transistor capacitances, influencing the switching behavior and switching loss, is calculated and compared for different voltage classes (below 100 V to 600 V-class). …”
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