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8281
Hydrogen in aluminum oxide and at the aluminum oxide/aluminum interface: an ab initio thermodynamics and Monte Carlo investigation
Published 2023“…The atomistic insight provides routes to engineering advanced barrier coatings, controllable transistor technologies and resistive switching devices, and noise-free superconducting qubits.…”
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Thesis -
8282
Ultra-dynamic voltage scalable (U-DVS) SRAM design considerations
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Thesis -
8283
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8284
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8285
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8286
Uniform etching for failure analysis of integrated circuits
Published 2023“…Following the trend towards transistor miniaturization and power efficiency in Integrated Circuits (ICs), the concurrent miniaturization of possible defects challenges Failure Analysis (FA) engineers to accurately deprocess ICs with great precision before accessing the defects. …”
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Final Year Project (FYP) -
8287
Carbon nanotubes with conductance-preserving covalent functionalities
Published 2014“…The electrical conductance of an m-SWCNT was firstly measured in the configuration of back-gated field effect transistor (FET). The conductance-sustaining effect of dichlorocarbene was clearly confirmed through an in-situ comparison between similar degrees of dichlorocarbene functionalization (only 13 ~ 23% drop in the conductance) and hydrogenation (more than 75% drop) on the same m-SWCNT. …”
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Thesis -
8288
Plasmonic nanostructures and their coupling to semiconductor light emitters
Published 2015“…A, B exciton peaks were observed for our WSe2 field-effect transistor (FET) device in temperature dependent photoconductivity spectrum. …”
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Thesis -
8289
Enhanced flow boiling heat transfer from 3D printed substrates
Published 2016“…Thus, the need to manage heat transfer is crucial as we expect heat dissipation to rise along with the increase in transistor count. This project seeks to study techniques and parameters which contribute to enhanced flow boiling heat transfer, in search for improved thermal management. …”
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Final Year Project (FYP) -
8290
Nano-electronic devices using two-dimensional and phase change materials
Published 2018“…A device concept termed strain-effect transistor is proposed wherein two-dimensional materials can be strained cyclically by the reversible amorphous-crystalline phase transition in the underlying phase change material. …”
Thesis -
8291
Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure
Published 2011“…Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. …”
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Article -
8292
A framework for system dependability validation under the influence of intrinsic parameters fluctuation
Published 2014“…The failure modules are generated corresponding to the individual and combined impact of IPF sources in nanometer scale Ultra Thin Body – Silicon on Isolator (UTB-SOI) transistor on 6T-SRAM cell stability. A novel fault injection mechanism has been introduced to propagate errors, through modifying data of cache transactions according to error(s) incurred, dynamically at system-level. …”
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Article -
8293
A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet
Published 2020“…When the device is scaled down, several problems arise such as the short-channel effect, excessive transistor gate leakage and power consumption. The purpose of this simulation work is to compare the performance of Double-Gate and Gate-All-Around and study the effect of scaling physical dimension on devices performance using Atlas Silvaco. …”
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Thesis -
8294
Temperature variation operation of mixed-V-T 3T GC-eDRAM for low power applications in 2kbit memory array
Published 2022“…The GC-eDRAM is simulated using a standard complementary-metal-oxide-semiconductor (CMOS) with a 130nm technology node transistor. The performance of a 2kbit mixed-VT 3T GC-eDRAM array were evaluated through corner process simulations. …”
Article -
8295
Damage mechanics-based model for reliability assessment of through-silicon via interconnects
Published 2020“…Thus, the staggered array o f 5 [un-diameter TSVs with pitch lengths of 15 and 20 jxm could accommodate transistor devices without adversely affecting its performance.…”
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Thesis -
8296
Performance comparison of CMOS and NMOS GNRFET full adder
Published 2022“…Transistor makes up the cornerstone of modern computing. …”
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Article -
8297
The investigation of chlorpyrifos (Cpy) detection of PEDOT:PSS-MXene(Ti2CTX)-BSA-GO composite using P-ISFET reduction method
Published 2023“…Herein, this study examines the use of Ti2CTX MXene structures in a P-channel ion-sensitive field-effect transistor (P-ISFET) for the detection of Chlorpyrifos (Cpy). …”
Article -
8298
Open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN HEMT structure
Published 2010“…Sensing responses of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated in aqueous solution. …”
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Article -
8299
Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure
Published 2011“…Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. …”
Article -
8300
Development of remote optical local oscillator for radio over fibre system
Published 2013“…The mixer is developed using a Heterojunction Bipolar Transistor (HBT) as its main active component due to its high internal gain. …”
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Thesis