Hydrogen in aluminum oxide and at the aluminum oxide/aluminum interface: an ab initio thermodynamics and Monte Carlo investigation by Somjit, Vrindaa

“…The atomistic insight provides routes to engineering advanced barrier coatings, controllable transistor technologies and resistive switching devices, and noise-free superconducting qubits.…”
Get full text

Ultra-dynamic voltage scalable (U-DVS) SRAM design considerations by Sinangil, Mahmut E. (Mahmut Ersin)

Get full text

Circuit design for logic automata by Chen, Kailiang

Get full text

Silicon field-effect sensors for biomolecular assays by Cooper, Emily Barbara, 1977-

Get full text

Numerical simulations of the forward problem and compressive digital holographic reconstruction of weak scatterers on a planar substrate by A., Disi

Get full text

Uniform etching for failure analysis of integrated circuits by Yeo, Aloysius Teng Howe

“…Following the trend towards transistor miniaturization and power efficiency in Integrated Circuits (ICs), the concurrent miniaturization of possible defects challenges Failure Analysis (FA) engineers to accurately deprocess ICs with great precision before accessing the defects. …”
Get full text

Carbon nanotubes with conductance-preserving covalent functionalities by Liu, Chao

“…The electrical conductance of an m-SWCNT was firstly measured in the configuration of back-gated field effect transistor (FET). The conductance-sustaining effect of dichlorocarbene was clearly confirmed through an in-situ comparison between similar degrees of dichlorocarbene functionalization (only 13 ~ 23% drop in the conductance) and hydrogenation (more than 75% drop) on the same m-SWCNT. …”
Get full text

Plasmonic nanostructures and their coupling to semiconductor light emitters by Li, Zhenpeng

“…A, B exciton peaks were observed for our WSe2 field-effect transistor (FET) device in temperature dependent photoconductivity spectrum. …”
Get full text

Enhanced flow boiling heat transfer from 3D printed substrates by Chua, Barnabas Wei Li

“…Thus, the need to manage heat transfer is crucial as we expect heat dissipation to rise along with the increase in transistor count. This project seeks to study techniques and parameters which contribute to enhanced flow boiling heat transfer, in search for improved thermal management. …”
Get full text

Nano-electronic devices using two-dimensional and phase change materials by Sarwat, S

“…A device concept termed strain-effect transistor is proposed wherein two-dimensional materials can be strained cyclically by the reversible amorphous-crystalline phase transition in the underlying phase change material. …”

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure by Maneea Eizadi Sharifabad, Mastura Shafinaz Zainal Abidin, Shaharin Fadzli Abd Rahman, Abdul Manaf Hashim, Abdul Rahim Abdul Rahman, Nurul Afzan Omar, Mohd Nizam Osman, Rabia Qindeel

“…Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. …”
Get full text

A framework for system dependability validation under the influence of intrinsic parameters fluctuation by Ahmed, Rabah Abood, Samsudin, Khairulmizam, Rokhani, Fakhrul Zaman

“…The failure modules are generated corresponding to the individual and combined impact of IPF sources in nanometer scale Ultra Thin Body – Silicon on Isolator (UTB-SOI) transistor on 6T-SRAM cell stability. A novel fault injection mechanism has been introduced to propagate errors, through modifying data of cache transactions according to error(s) incurred, dynamically at system-level. …”
Get full text

A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet by Kosmani, Nor Fareza

“…When the device is scaled down, several problems arise such as the short-channel effect, excessive transistor gate leakage and power consumption. The purpose of this simulation work is to compare the performance of Double-Gate and Gate-All-Around and study the effect of scaling physical dimension on devices performance using Atlas Silvaco. …”
Get full text
Get full text
Get full text

Temperature variation operation of mixed-V-T 3T GC-eDRAM for low power applications in 2kbit memory array by Abdo, Hussien, Alias, N. Ezaila, Hamzah, Afiq, Kamisian, Izam, Tan, M. L. Peng, Sheikh, U. Ullah

“…The GC-eDRAM is simulated using a standard complementary-metal-oxide-semiconductor (CMOS) with a 130nm technology node transistor. The performance of a 2kbit mixed-VT 3T GC-eDRAM array were evaluated through corner process simulations. …”

Damage mechanics-based model for reliability assessment of through-silicon via interconnects by Afripin, Mohammad Amirul Affiz

“…Thus, the staggered array o f 5 [un-diameter TSVs with pitch lengths of 15 and 20 jxm could accommodate transistor devices without adversely affecting its performance.…”
Get full text

Performance comparison of CMOS and NMOS GNRFET full adder by Tan, Zheng Hong, M. Rasol, M. Faidzal, Johari, Zaharah, Hamzah, Afiq, Tan, Michael Loong Peng, Mohamed Sultan, Suhana, Alias, Nurul Ezaila, Isaak, Suhaila, Yusoff, Yusmeeraz

“…Transistor makes up the cornerstone of modern computing. …”
Get full text

The investigation of chlorpyrifos (Cpy) detection of PEDOT:PSS-MXene(Ti2CTX)-BSA-GO composite using P-ISFET reduction method by Megat Hasnan, Megat Muhammad Ikhsan, Lim, Gim Pao, Nayan, Nafarizal, Soon, Chin Fhong, Abd. Halim, Adyani Azizah, Ahmad, Mohd. Khairul, Mohd. Said, Suhana, Mohamed Ali, Muhammad Saqib, Mohd. Noor, Ikhwan Syafiq

“…Herein, this study examines the use of Ti2CTX MXene structures in a P-channel ion-sensitive field-effect transistor (P-ISFET) for the detection of Chlorpyrifos (Cpy). …”

Open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN HEMT structure by Abidin, M. S. Z., Sharifabad, M. E., Rahman, S. F. A., Mustafa, F., Hashim, Abdul Manaf, Rahman, A. R. A., Qindeel, R., Omar, N. A.

“…Sensing responses of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated in aqueous solution. …”
Get full text

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure by Sharifabad, Maneea Eizadi, Zainal Abidin, Mastura Shafinaz, Abd. Rahman, Shaharin Fadzli, Hashim, Abdul Manaf, Abdul Rahman, Abdul Rahim, Omar, Nurul Afzan, Osman, Mohd. Nizam, Qindeel, Rabia

“…Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. …”

Development of remote optical local oscillator for radio over fibre system by Mohamed, Norliza

“…The mixer is developed using a Heterojunction Bipolar Transistor (HBT) as its main active component due to its high internal gain. …”
Get full text