Electrical characterization of N-MOS and P-MOS Junctionless Gate-All-Around (GAA) MOSFET for an inverter application by Ho, Kok Pow, N., Mathan, Mohamed Ali, Mohamed Sultan, Mohd. Napi, Muhammad Luqman, Hosseingholipouras, Ali, Abd. Hamid, Fatimah Khairiah

“…This paper presents a numerical simulation to examine the electrical performance of a Junctionless Gate-All-Around (JGAA) Field Effect Transistor (FET) as an inverter. The advantages of the device offer smaller threshold voltage, lower leakage current, better electrostatic control, better device performance and can operate at a high speed. …”
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Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects by Abd. Hamid, Fatimah Khairiah

“…In the recent development of advanced nanoelectronic devices, strain application on silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key factor towards the improvement of device performance. …”
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Performance evaluation of single-stage differential amplifier based on carbon nanotube by Voon, Vivian Li Sin

“…Silicon-based power transistor devices has low power consumption which allows more components per chip surface area. …”
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Reaction of N,N’-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide by A. Fukui, K. Miura, H. Ichimiya, A. Tsurusaki, K. Kariya, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

“…The synthesized molecule was found to act as a dopant for MoS2 by applying a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure. The process is a general method and applicable to other viologen-related dopants to tune the electronic structure of 2D materials to facilitate generating atomically thin devices.…”
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Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off by Meng Zhang, Yamin Zhang, Baikui Li, Shiwei Feng, Mengyuan Hua, Xi Tang, Jin Wei, Kevin J. Chen

“…In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state. …”
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Low Thermal Conductivity Materials and Very Low Heat Power: A Demanding Challenge in the Detection of Flaws in Multi-Layer Wooden Cultural Heritage Objects Solved by Pulse-Compress... by Stefano Sfarra, Stefano Laureti, Gianfranco Gargiulo, Hamed Malekmohammadi, Mario Andrea Sangiovanni, Mauro La Russa, Pietro Burrascano, Marco Ricci

“…Thus, the present work is also the first small-scale test of a future portable system that will include low-power LED chip feed in DC by metal-oxide-semiconductor field-effect transistor (MOSFET) devices, and a handy far-infrared camera.…”
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Dynamic Adaptive Display System for Electrowetting Displays Based on Alternating Current and Direct Current by Shixiao Li, Yijian Xu, Zhiyu Zhan, Pengyuan Du, Linwei Liu, Zikai Li, Huawei Wang, Pengfei Bai

“…In this paper, a dynamic adaptive display model based on thin film transistor-electrowetting display (TFT-EWD) was proposed. …”
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Highly Sensitive and Selective Sol-Gel Spin-Coated Composite TiO₂–PANI Thin Films for EGFET-pH Sensor by Nur Syahirah Kamarozaman, Nurbaya Zainal, Aimi Bazilah Rosli, Muhammad Alhadi Zulkefle, Nik Raikhan Nik Him, Wan Fazlida Hanim Abdullah, Sukreen Hana Herman, Zurita Zulkifli

“…The films have been explored as a sensing electrode (SE) of extended gate field-effect transistor (EGFET) for pH applications in the range of pH 2 to 12. …”
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Recent Development of Gas Sensing Platforms Based on 2D Atomic Crystals by Jiacheng Cao, Qian Chen, Xiaoshan Wang, Qiang Zhang, Hai-Dong Yu, Xiao Huang, Wei Huang

“…While most gas sensors based on 2D atomic crystals have been incorporated in the setup of a chemiresistor, field-effect transistor (FET), quartz crystal microbalance (QCM), or optical fiber, their working principles that involve gas adsorption, charge transfer, surface reaction, mass loading, and/or change of the refractive index vary from material to material. …”
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Impact of water vapor annealing treatments on Al2O3/diamond interface by Xufang Zhang, Tsubasa Matsumoto, Mitsuru Sometani, Masahiko Ogura, Hiromitsu Kato, Toshiharu Makino, Daisuke Takeuchi, Takao Inokuma, Satoshi Yamasaki, Norio Tokuda

“…Our group developed the first inversion-type p-channel diamond metal–oxide–semiconductor field-effect transistor, which featured normally off properties by employing water vapor annealing treatments for the oxygen-terminated diamond surface. …”
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Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique by Hao Chang, Guilei Wang, Hong Yang, Qianqian Liu, Longda Zhou, Zhigang Ji, Ruixi Yu, Zhenhua Wu, Huaxiang Yin, Anyan Du, Junfeng Li, Jun Luo, Chao Zhao, Wenwu Wang

“…The results provide a trap-based understanding of the transistor repairing technique, which could provide guidance for the reliable long-term operation of ICs.…”
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A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications by Warsha Balani, Mrinal Sarvagya, Tanweer Ali, Ajit Samasgikar, Pradeep Kumar, Sameena Pathan, Manohara Pai M M

“…The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. …”
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Field Plant Monitoring from Macro to Micro Scale: Feasibility and Validation of Combined Field Monitoring Approaches from Remote to in Vivo to Cope with Drought Stress in Tomato by Filippo Vurro, Michele Croci, Giorgio Impollonia, Edoardo Marchetti, Adrian Gracia-Romero, Manuele Bettelli, José Luis Araus, Stefano Amaducci, Michela Janni

“…To this end, we tested different methodologies in the monitoring of tomato growth under different water regimes: (i) micro-scale (inserted in the plant stem) real-time monitoring with an organic electrochemical transistor (OECT)-based sensor, namely a bioristor, that enables continuous monitoring of the plant; (ii) medium-scale (<1 m from the canopy) monitoring through red–green–blue (RGB) low-cost imaging; (iii) macro-scale multispectral and thermal monitoring using an unmanned aerial vehicle (UAV). …”
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Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application by Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon

“…In this paper, floating fin structured vertically stacked nanosheet gate-all-around (GAA) metal oxide semiconductor field-effect transistor (FNS) is proposed for low power logic device applications. …”
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A Reconfigurable 8T Ultra-Dynamic Voltage Scalable (U-DVS) SRAM in 65 nm CMOS by Verma, Naveen, Sinangil, Mahmut Ersin, Chandrakasan, Anantha P.

“…However, optimizing circuit operation over a large voltage range is not trivial due to conflicting trade-offs of low-voltage (moderate and weak inversion) and high-voltage (strong inversion) transistor characteristics. Specifically, low-voltage operation requires various assist circuits for functionality which might severely impact high-voltage performance. …”
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Brief announcement: Distributed shared memory based on computation migration by Lis, Mieszko, Shim, Keun Sup, Cho, Myong Hyon, Fletcher, Christopher Wardlaw, Kinsy, Michel A., Lebedev, Ilia A., Khan, Omer, Devadas, Srinivas

“…One barrier to scaling current memory architectures is the offchip memory bandwidth wall [1,2]: off-chip bandwidth grows with package pin density, which scales much more slowly than on-die transistor density [3]. To reduce reliance on external memories and keep data on-chip, today’s multicores integrate very large shared last-level caches on chip [4]; interconnects used with such shared caches, however, do not scale beyond relatively few cores, and the power requirements and access latencies of large caches exclude their use in chips on a 1000-core scale. …”
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The investigation of chlorpyrifos (Cpy) detection of PEDOT:PSS-MXene(Ti2CTX)-BSA-GO composite using P-ISFET reduction method by Megat Muhammad Ikhsan Megat Hasnan, Lim, G. P., N. Nayan, Soon, C. F., A. A. Abd Halim, M. K. Ahmad, S. M. Said, M. S. Mohamed Ali, I. M. Noor

“…Herein, this study examines the use of Ti2CTX MXene structures in a P-channel ion-sensitive field-effect transistor (P-ISFET) for the detection of Chlorpyrifos (Cpy). …”
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Image processing and machine learning for IC image analysis and hardware assurance by Cheng, Deruo

“…With experiments on a set of delayered IC images, the proposed GTPM achieves a mean intersection-over-union accuracy of 82.07% and a mean pixel accuracy of 88.54% on retrieving transistor interconnections, which are over 2 times higher than the reported image processing techniques. …”
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X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology by Hyeonseok Lee, Hyeong-Geun Park, Van-Du Le, Van-Phu Nguyen, Jeong-Moon Song, Bok-Hyung Lee, Jung-Dong Park

“…This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based transmit/receive module (TRM), each of which achieves an insertion loss of 1.21 dB and 0.66 dB at 9 GHz, IP_1dB higher than 46.3 dBm and 44.7 dBm, respectively. …”
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Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS by Wriddhi Chakraborty, Khandker Akif Aabrar, Jorge Gomez, Rakshith Saligram, Arijit Raychowdhury, Patrick Fay, Suman Datta

“…Finally, performance benchmarking reveals that 22 nm FDSOI cryogenic RF CMOS provides a viable option for achieving superior analog performance with giga-scale transistor integration density.…”
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