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8301
Electrical characterization of N-MOS and P-MOS Junctionless Gate-All-Around (GAA) MOSFET for an inverter application
Published 2021“…This paper presents a numerical simulation to examine the electrical performance of a Junctionless Gate-All-Around (JGAA) Field Effect Transistor (FET) as an inverter. The advantages of the device offer smaller threshold voltage, lower leakage current, better electrostatic control, better device performance and can operate at a high speed. …”
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Article -
8302
Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects
Published 2020“…In the recent development of advanced nanoelectronic devices, strain application on silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key factor towards the improvement of device performance. …”
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Thesis -
8303
Performance evaluation of single-stage differential amplifier based on carbon nanotube
Published 2022“…Silicon-based power transistor devices has low power consumption which allows more components per chip surface area. …”
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Thesis -
8304
Reaction of N,N’-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide
Published 2018-05-01“…The synthesized molecule was found to act as a dopant for MoS2 by applying a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure. The process is a general method and applicable to other viologen-related dopants to tune the electronic structure of 2D materials to facilitate generating atomically thin devices.…”
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Article -
8305
Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off
Published 2023-01-01“…In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state. …”
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Article -
8306
Low Thermal Conductivity Materials and Very Low Heat Power: A Demanding Challenge in the Detection of Flaws in Multi-Layer Wooden Cultural Heritage Objects Solved by Pulse-Compress...
Published 2020-06-01“…Thus, the present work is also the first small-scale test of a future portable system that will include low-power LED chip feed in DC by metal-oxide-semiconductor field-effect transistor (MOSFET) devices, and a handy far-infrared camera.…”
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Article -
8307
Dynamic Adaptive Display System for Electrowetting Displays Based on Alternating Current and Direct Current
Published 2022-10-01“…In this paper, a dynamic adaptive display model based on thin film transistor-electrowetting display (TFT-EWD) was proposed. …”
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Article -
8308
Highly Sensitive and Selective Sol-Gel Spin-Coated Composite TiO<sub>2</sub>–PANI Thin Films for EGFET-pH Sensor
Published 2022-10-01“…The films have been explored as a sensing electrode (SE) of extended gate field-effect transistor (EGFET) for pH applications in the range of pH 2 to 12. …”
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Article -
8309
Recent Development of Gas Sensing Platforms Based on 2D Atomic Crystals
Published 2021-01-01“…While most gas sensors based on 2D atomic crystals have been incorporated in the setup of a chemiresistor, field-effect transistor (FET), quartz crystal microbalance (QCM), or optical fiber, their working principles that involve gas adsorption, charge transfer, surface reaction, mass loading, and/or change of the refractive index vary from material to material. …”
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Article -
8310
Impact of water vapor annealing treatments on Al2O3/diamond interface
Published 2024-03-01“…Our group developed the first inversion-type p-channel diamond metal–oxide–semiconductor field-effect transistor, which featured normally off properties by employing water vapor annealing treatments for the oxygen-terminated diamond surface. …”
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Article -
8311
Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique
Published 2023-04-01“…The results provide a trap-based understanding of the transistor repairing technique, which could provide guidance for the reliable long-term operation of ICs.…”
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Article -
8312
A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications
Published 2021-12-01“…The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. …”
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Article -
8313
Field Plant Monitoring from Macro to Micro Scale: Feasibility and Validation of Combined Field Monitoring Approaches from Remote to in Vivo to Cope with Drought Stress in Tomato
Published 2023-11-01“…To this end, we tested different methodologies in the monitoring of tomato growth under different water regimes: (i) micro-scale (inserted in the plant stem) real-time monitoring with an organic electrochemical transistor (OECT)-based sensor, namely a bioristor, that enables continuous monitoring of the plant; (ii) medium-scale (<1 m from the canopy) monitoring through red–green–blue (RGB) low-cost imaging; (iii) macro-scale multispectral and thermal monitoring using an unmanned aerial vehicle (UAV). …”
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Article -
8314
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application
Published 2023-01-01“…In this paper, floating fin structured vertically stacked nanosheet gate-all-around (GAA) metal oxide semiconductor field-effect transistor (FNS) is proposed for low power logic device applications. …”
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Article -
8315
A Reconfigurable 8T Ultra-Dynamic Voltage Scalable (U-DVS) SRAM in 65 nm CMOS
Published 2010“…However, optimizing circuit operation over a large voltage range is not trivial due to conflicting trade-offs of low-voltage (moderate and weak inversion) and high-voltage (strong inversion) transistor characteristics. Specifically, low-voltage operation requires various assist circuits for functionality which might severely impact high-voltage performance. …”
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Article -
8316
Brief announcement: Distributed shared memory based on computation migration
Published 2012“…One barrier to scaling current memory architectures is the offchip memory bandwidth wall [1,2]: off-chip bandwidth grows with package pin density, which scales much more slowly than on-die transistor density [3]. To reduce reliance on external memories and keep data on-chip, today’s multicores integrate very large shared last-level caches on chip [4]; interconnects used with such shared caches, however, do not scale beyond relatively few cores, and the power requirements and access latencies of large caches exclude their use in chips on a 1000-core scale. …”
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Article -
8317
The investigation of chlorpyrifos (Cpy) detection of PEDOT:PSS-MXene(Ti2CTX)-BSA-GO composite using P-ISFET reduction method
Published 2022“…Herein, this study examines the use of Ti2CTX MXene structures in a P-channel ion-sensitive field-effect transistor (P-ISFET) for the detection of Chlorpyrifos (Cpy). …”
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Article -
8318
Image processing and machine learning for IC image analysis and hardware assurance
Published 2021“…With experiments on a set of delayered IC images, the proposed GTPM achieves a mean intersection-over-union accuracy of 82.07% and a mean pixel accuracy of 88.54% on retrieving transistor interconnections, which are over 2 times higher than the reported image processing techniques. …”
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Thesis-Doctor of Philosophy -
8319
X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology
Published 2023-05-01“…This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based transmit/receive module (TRM), each of which achieves an insertion loss of 1.21 dB and 0.66 dB at 9 GHz, IP<sub>1dB</sub> higher than 46.3 dBm and 44.7 dBm, respectively. …”
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Article -
8320
Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS
Published 2021-01-01“…Finally, performance benchmarking reveals that 22 nm FDSOI cryogenic RF CMOS provides a viable option for achieving superior analog performance with giga-scale transistor integration density.…”
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Article