Analysis and Design of the Suboptimum Class-E_M/F₃ Resonant Inverter by Guangwen Yang, Xinpeng Li, Jinting Liu, Xiaojuan Han, Hong Chang, Wei Zhang, Xinquan Yang, Mingyu Li

“…To verify the validity of the proposed method, a Class- <inline-formula> <tex-math notation="LaTeX">$\text{E}_{\mathrm {M}}/\text{F}_{3}$ </tex-math></inline-formula> inverter operating at 1MHz is designed using the IRFZ24N transistor. The experimental results show that the output power of the new inverter is 15.138W, the efficiency reaches 96.4&#x0025;, and the peak switching voltage of the main circuit and auxiliary circuit is reduced by 29.3&#x0025; and 15.6&#x0025;, respectively. …”
Get full text

A 180 nm CMOS Integrated Optoelectronic Sensing System for Biomedical Applications by Guido Di Patrizio Stanchieri, Andrea De Marcellis, Marco Faccio, Elia Palange, Graziano Battisti, Ulkuhan Guler

“…The reported optoelectronic sensing system is implemented and fabricated in TSMC 180 nm integrated CMOS technology and combines a Si photodiode based on a PNP junction with a Si area of 0.01 mm² and a transimpedance amplifier designed at a transistor level requiring a Si area of 0.002 mm² capable to manage up to nanoampere input currents generated by the photodiode. …”
Get full text

Area-Efficient Post-Processing Circuits for Physically Unclonable Function with 2-Mpixel CMOS Image Sensor by Shunsuke Okura, Masanori Aoki, Tatsuya Oyama, Masayoshi Shirahata, Takeshi Fujino, Kenichiro Ishikawa, Isao Takayanagi

“…In order to realize image information security starting from the data source, challenge–response (CR) device authentication, based on a Physically Unclonable Function (PUF) with a 2 Mpixel CMOS image sensor (CIS), is studied, in which variation of the transistor in the pixel array is utilized. As each CR pair can be used only once to make the CIS PUF resistant to the modeling attack, CR authentication with CIS can be carried out 4050 times, with basic post-processing to generate the PUF ID. …”
Get full text

The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure by Yanan Liang, Rui Chen, Jianwei Han, Xuan Wang, Qian Chen, Han Yang

“…An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. …”
Get full text

Design and Application of a Traveling Wave Pulse Power Supply for Traveling Wave Ion Mobility Spectrometry by LI Hong1, DENG Fu-long1, GUO Xing2, LYU Yan-tong3, YUE Han-lu1, WANG Ru-xin1, YANG Yan-ting4, ZHAO Zhong-jun5, DUAN Yi-xiang1

“…In this work, a traveling wave pulse power supply was developed, which mainly consisted of field programmable gate array (FPGA), half-bridge gate driver integrated circuit (IC), metal-oxide-semiconductor field effect transistor (MOSFET), adjustable high voltage module and external trigger signal. …”
Get full text

A 1.8 V Low-Power Low-Noise High Tunable Gain TIA for CMOS Integrated Optoelectronic Biomedical Applications by Guido Di Patrizio Stanchieri, Andrea De Marcellis, Graziano Battisti, Marco Faccio, Elia Palange, Ulkuhan Guler

“…The proposed new TIA architecture has been designed at transistor level in TSMC 0.18 μm standard CMOS technology with the aim to operate with nanoampere input pulsed currents that can be generated, for example, by Si photodiodes in optical sensor systems. …”
Get full text

A Weighted Linearization Method for Highly RF-PA Nonlinear Behavior Based on the Compression Region Identification by Jose Alejandro Galaviz-Aguilar, Cesar Vargas-Rosales, José Ricardo Cárdenas-Valdez, Yasmany Martínez-Reyes, Everardo Inzunza-González, Yuma Sandoval-Ibarra, José Cruz Núñez-Pérez

“…The adaptive modeling stage shows, for the two PAs under test, performances with accuracies of −32.72 dB normalized mean square error (NMSE) using the memory polynomial model (MPM) compared with −38.03 dB NMSE using the W-MPM for the (i) 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) radio frequency power amplifier (RF-PA) and of −44.34 dB NMSE based on the MPM and −44.90 dB NMSE using the W-MPM for (ii) a ZHL-42W+ at 2000 MHz. …”
Get full text

Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters by Minghui Yun, Daoguo Yang, Siliang He, Siliang He, Miao Cai, Jing Xiao, Kailin Zhang, Guo-Qi Zhang

“…Therefore, determining and quantifying the failure of a metal-oxide-semiconductor-field-effect transistor (MOSFET), which assembled using WBG semiconductor in some applications, is crucial to improving the reliability of a power converter. …”
Get full text

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance by Qing Chen, Rong Sun, Ruixia Miao, Hanxiao Liu, Lulu Yang, Zengwei Qi, Wei He, Jianwei Li

“…In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. …”
Get full text

An artificial neural network approach for classification and prediction of low pressure chemical vapor deposition SixNy ISFET pH sensor drift by Mohammad Iqwhanus Syaffa, Amir

“…A sensor in an ion selective field-effect transistor (ISFET) is a field sensor in which ions within a sample media undergo multiple environments affecting reactions occurring molecules to concentrate at the gate oxide layer. …”
Get full text

An efficient self-configurable driver for color light emitting diode by Shaheer Shaida, Durrani

“…The improvement is based on the combinational circuits of transistor and op-amp with proper scheme biasing. The improved dimming circuit is then proposed for exploiting the range of dimming at the string and module level. …”
Get full text

Development of drift conversion algorithm for ISFET based pH sensor for continuous measurement system by Othman, Md Rizal, Najib, Muhammad Sharfi, Muda, Razali, Sulaiman, Mohd Herwan, Noordin, Nurul Hazlina, Hadi, Amran Abdul, Kamaludin, Mohamad Yusof, Mohd Ismahad, Syono

“…In an ion-sensitive field-effect transistor (ISFET) sensor, the ions within the sample media undergo multiple environments influenced reactions occurring molecules from these reactions to accumulate upon the gate oxide layer. …”
Get full text

<italic>H</italic>-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun by Yeongmin Jang, Youngchae Jeon, Jinho Jeong

“…A broadband power amplifier in a 250-nm InP HBT technology is presented, working at full <inline-formula> <tex-math notation="LaTeX">$H$ </tex-math></inline-formula>-band (220&#x2013;320 GHz). A cascode transistor is employed as a power cell to achieve high gain and power at <inline-formula> <tex-math notation="LaTeX">$H$ </tex-math></inline-formula>-band. …”
Get full text

Self-aligned multi-layer X-ray absorption grating using large-area fabrication methods for X-ray phase-contrast imaging by Abdollah Pil-Ali, Sahar Adnani, Karim S. Karim

“…We leverage large-area fabrication techniques commonly employed by the thin-film transistor (TFT) display industry. Conventional ITO-on-glass substrates are used with a patterned film of Cr/Au/Cr that serves as a self-aligned lithography mask for backside exposure. …”
Get full text

Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications by Surya Elangovan, Stone Cheng, Edward Yi Chang

“…We present a detailed study of dynamic switching instability and static reliability of a Gallium Nitride (GaN) Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) based cascode switch under off-state (negative bias) Gate bias stress (V_{GS, OFF}). …”
Get full text

ON/OFF POWER SWITCH DAN REMOTE CONTROL BERBASIS MICROCONTROLLER ATMEGA8 SEBAGAI RELIABILITY TESTER CRT DANLCD TV by Fina Supegina, Fajar Caturangga

“…Sebagai teknologi baru, yaitu teknologi semikonduktor dengan kandungan transistor yang lebih banyak namun hanya membutuhkan ruang yang lebih kecil serta dapat diproduksi secara masal sehingga harganya menjadi lebih murah (dibandingkan dengan mikroprosesor). …”
Get full text

A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications by Hyunjin Ahn, Kyutaek Oh, Se-Eun Choi, Dong-Hee Son, Ilku Nam, Kyoohyun Lim, Ockgoo Lee

“…A parallel-combined transistor method is adopted for a dual-mode operation and a third-order intermodulation distortion (IMD3) cancellation. …”
Get full text

Nano-Particle VO₂ Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope by Massood Tabib-Azar, Rugved Likhite

“…The possibility of controlling the insulator-to-metal transition (IMT) in nano-particle VO₂ (NP-VO₂) using the electric field effect in a metal-oxide-VO₂ field-effect transistor (MOVFET) at room temperature was investigated for the first time. …”
Get full text

Design of Precision-Aware Subthreshold-Based MOSFET Voltage Reference by Shuzheng Mu, Pak Kwong Chan

“…In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transistor (BJT), relatively lower power consumption was obtained in the design while offering comparable precision to that offered by its BJT counterpart. …”
Get full text

Miller Plateau Corrected with Displacement Currents and Its Use in Analyzing the Switching Process and Switching Loss by Sheng Liu, Shuang Song, Ning Xie, Hai Chen, Xiaobo Wu, Menglian Zhao

“…This paper reveals the relationship between the Miller plateau voltage and the displacement currents through the gate–drain capacitance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>C</mi><mi mathvariant="italic">GD</mi></msub></semantics></math></inline-formula>) and the drain–source capacitance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>C</mi><mi mathvariant="italic">DS</mi></msub></semantics></math></inline-formula>) in the switching process of a power transistor. The corrected turn-on Miller plateau voltage and turn-off Miller plateau voltage are different even with a constant current load. …”
Get full text