Real-time human respiration carbon dioxide measurement device for cardiorespiratory assessment by Singh, O. P., Howe, T. A., Malarvili, M. B.

“…Hence, we report a real-time, user operable CO2 measurement device using an infrared CO2 sensor (Arduino Mega2560) and a thin film transistor (TFT, 3.5″), incorporated with low pass (cut-off frequency, 10 Hz) and moving average (span, 8) filters. …”
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Carrier transport of rough-edged doped GNRFETs with metal contacts at various channel widths by Lherbier, Aurelien, Liang, Liangbo, Charlier, Jean-Christophe, Meunier, Vincent

“…The edge roughness effect will degrade the performance of the field effect transistor (FET). Therefore, modelling GNR FETs (GNRFETs) with the line-edge roughness effect and doping is crucial for evaluating the performance metrics of these devices. …”

GCC toolchain's c compiler wrapper for the Amir CPU assembly language by Ee, Eline Bee Ling

“…The microprocessor is an icon of the information age today, which evolved from the inventions of the transistor and the integrated circuit (IC). The extensiveness of the microprocessor in this age goes far beyond the wildest imagination at the time of the first microprocessor. …”
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Design and characterization of 8×1 photon counting array in 0.13 μm CMOS technology at 1 GHz by Tan, Yi Quan

“…The simulated dead time result from the schematic design for the 8×1 passive quenched SPAD array is observed with the result as 1 GHz operating frequency with the transistor size length 0.13 µm and width 0.35 µm. The result from physical designed layout is compared to the schematic design to ensure both designs provide the similar output.…”
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Temperature variation operation of mixed-VT 3T GC-eDRAM for low power applications in 2Kbit memory array by Abdo, Hussien, Alias, N. Ezaila, Hamzah, Afiq, Kamisian, Izam, Tan, M. L. Peng, Sheikh, U. Ullah

“…The GC-eDRAM is simulated using a standard complementary-metal-oxide-semiconductor (CMOS) with a 130nm technology node transistor. The performance of a 2kbit mixed-VT 3T GC-eDRAM array were evaluated through corner process simulations. …”
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Performance analysis of ISFET biosensor with different structures by Lam, Yi Ling

“…Ion-sensitive field-effect transistor (ISFET) biosensor has gained popularity in clinical research field for biomolecules detection due to its high detection sensitivity, mass-production capability, and low manufacturing cost. …”
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Understanding and engineering interfacial charge transfer of carbon nanotubes and graphene for energy and sensing applications by Paulus, Geraldine L. C. (Geraldine Laura Caroline)

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Reclaimed water in Taiwan: current status and future prospects by Hai-Hsuan Cheng, Wan-Sheng Yu, Shu-Chuang Tseng, Yi-Ju Wu, Ching-Lin Hsieh, Shi-Shuan Lin, Ching-Ping Chu, Yu-De Huang, Wan-Ru Chen, Tsair-Fuh Lin, Liang-Ming Whang

“…Case studies in Taiwan including reclaimed water from high water-consuming industries such as thin film transistor-liquid crystal display (TFT-LCD) and semiconductor industries, as well as from municipal wastewater treatment plants are presented. …”
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A Design of Real-Time Data Acquisition and Processing System for Nanosecond Ultraviolet-Visible Absorption Spectrum Detection by Meng Xia, Nanjing Zhao, Gaofang Yin, Ruifang Yang, Xiaowei Chen, Chun Feng, Ming Dong

“…The hardware of the data acquisition and processing system are constructed on a Xilinx Spartan 6 FPGA chip and its peripheral circuit, including an analog to digital converter and a complementary metal-oxide-semiconductor transistor (CMOS) sensor’s diver circuit. An oversampling method that is suitable for the CMOS sensor’s output is proposed, which works on the CMOS sensor’s dark current noise and readout noise. …”
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Study of a Gate-Engineered Vertical TFET with GaSb/GaAs_0.5Sb_0.5 Heterojunction by Haiwu Xie, Yanning Chen, Hongxia Liu, Dan Guo

“…It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. …”
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A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 4: The Effect of Humidity by Moshe Avraham, Adir Krayden, Hanin Ashkar, Dan Aronin, Sara Stolyarova, Tanya Blank, Dima Shlenkevitch, Yael Nemirovsky

“…The TMOS is a micromachined CMOS-SOI transistor, which acts as the sensing element and is integrated with a catalytic reaction plate, where ignition of the gas takes place. …”
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Enhanced Nitric Oxide Sensing Performance of Conjugated Polymer Films through Incorporation of Graphitic Carbon Nitride by Proscovia Kyokunzire, Ganghoon Jeong, Seo Young Shin, Hyeong Jun Cheon, Eunsol Wi, Minhong Woo, Trang Thi Vu, Mincheol Chang

“…Organic field-effect transistor (OFET) gas sensors based on conjugated polymer films have recently attracted considerable attention for use in environmental monitoring applications. …”
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All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing by Huai Lin, Xi Luo, Long Liu, Di Wang, Xuefeng Zhao, Ziwei Wang, Xiaoyong Xue, Feng Zhang, Guozhong Xing

“…Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading “1” and “0”, respectively. …”
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Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology by Zhenbing Li, Junjie Huang, Jinrong Zhang, Shilin Jia, Haoyang Sun, Gang Li, Guangjun Wen

“…Therefore, in this paper, an L-band highly integrated PA chip compatible with 3 W and 5 W output power is designed in InGaP/GaAs heterojunction bipolar transistor (HBT) technology combined with temperature-insensitive adaptive bias technology, class-F harmonic suppression technology, analog pre-distortion technology, temperature-insensitive adaptive power detection technology, and land grid array (LGA) packaging technology. …”
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Interface Optimization and Transport Modulation of Sm₂O₃/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer by Jinyu Lu, Gang He, Jin Yan, Zhenxiang Dai, Ganhong Zheng, Shanshan Jiang, Lesheng Qiao, Qian Gao, Zebo Fang

“…Based on the measurement results, Sm₂O₃/Al₂O₃/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.…”
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Low-Power Long-Term Ambulatory Electrocardiography Monitor of Three Leads with Beat-to-Beat Heart Rate Measurement in Real Time by Frank Martínez-Suárez, José Alberto García-Limón, Jorge Enrique Baños-Bautista, Carlos Alvarado-Serrano, Oscar Casas

“…The monitor presented is based in an ADS1294 analogue front end with four channels, 24-bit analog-to-digital converters and programmable gain amplifiers, a low-power dual-core ESP32 microcontroller, a microSD memory for data storage in a range of 4 GB to 32 GB and a 1.4 in thin-film transistor liquid crystal display (LCD) variant with a resolution of 128 × 128 pixels. …”
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Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT by Jie Jiang, Qiuqi Chen, Shengdong Hu, Yijun Shi, Zhiyuan He, Yun Huang, Caixin Hui, Yiqiang Chen, Hao Wu, Guoguang Lu

“…This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. …”
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Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems by Wade, Mark T., Orcutt, Jason Scott, Shainline, Jeffrey M., Sun, Chen, Georgas, Michael, Moss, Benjamin Roy, Kumar, Rajesh, Alloatti, Luca, Pavanello, Fabio, Chen, Yu-Hsin, Nammari, Kareem, Notaros, Jelena, Ram, Rajeev J., Popovic, Milos A., Atabaki, Amir H., Leu, Jonathan Chung, Stojanovic, Vladimir

“…We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. …”
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Eletrônica Criativa: Uma estratégia metodológica para o Ensino e Aprendizagem de conceitos de eletricidade e/ou eletrônica na modalidade Híbrida de Ensino: Introdução by Marisa Almeida Cavalcante, Elio Molisani Ferreira Santos

“…Para os anos de 2021 e 2022 devemos oferecer um curso de Computação Física Avançado com carga horária mínima de 20 horas, voltados a professores multiplicadores, para tratar com maior grau de profundidade conteúdos de eletrônica, tais como, funcionamento de transistores e sua utilização para o funcionamento adequado de motores, limites de operação do simulador Tinkercad para o estudo de propriedades de diodos, uso de circuitos integrados como portas lógicas, dentre outros temas trazidos pelos professores cursistas, mediante a necessidade de seus projetos e planos de aula. …”
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Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation by Jibing Chen, Bowen Liu, Maohui Hu, Shisen Huang, Shanji Yu, Yiping Wu, Junsheng Yang

“…The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. …”
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