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8361
Real-time human respiration carbon dioxide measurement device for cardiorespiratory assessment
Published 2018“…Hence, we report a real-time, user operable CO2 measurement device using an infrared CO2 sensor (Arduino Mega2560) and a thin film transistor (TFT, 3.5″), incorporated with low pass (cut-off frequency, 10 Hz) and moving average (span, 8) filters. …”
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8362
Carrier transport of rough-edged doped GNRFETs with metal contacts at various channel widths
Published 2020“…The edge roughness effect will degrade the performance of the field effect transistor (FET). Therefore, modelling GNR FETs (GNRFETs) with the line-edge roughness effect and doping is crucial for evaluating the performance metrics of these devices. …”
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8363
GCC toolchain's c compiler wrapper for the Amir CPU assembly language
Published 2020“…The microprocessor is an icon of the information age today, which evolved from the inventions of the transistor and the integrated circuit (IC). The extensiveness of the microprocessor in this age goes far beyond the wildest imagination at the time of the first microprocessor. …”
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8364
Design and characterization of 8×1 photon counting array in 0.13 μm CMOS technology at 1 GHz
Published 2020“…The simulated dead time result from the schematic design for the 8×1 passive quenched SPAD array is observed with the result as 1 GHz operating frequency with the transistor size length 0.13 µm and width 0.35 µm. The result from physical designed layout is compared to the schematic design to ensure both designs provide the similar output.…”
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Thesis -
8365
Temperature variation operation of mixed-VT 3T GC-eDRAM for low power applications in 2Kbit memory array
Published 2022“…The GC-eDRAM is simulated using a standard complementary-metal-oxide-semiconductor (CMOS) with a 130nm technology node transistor. The performance of a 2kbit mixed-VT 3T GC-eDRAM array were evaluated through corner process simulations. …”
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8366
Performance analysis of ISFET biosensor with different structures
Published 2022“…Ion-sensitive field-effect transistor (ISFET) biosensor has gained popularity in clinical research field for biomolecules detection due to its high detection sensitivity, mass-production capability, and low manufacturing cost. …”
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Thesis -
8367
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8368
Reclaimed water in Taiwan: current status and future prospects
Published 2023-05-01“…Case studies in Taiwan including reclaimed water from high water-consuming industries such as thin film transistor-liquid crystal display (TFT-LCD) and semiconductor industries, as well as from municipal wastewater treatment plants are presented. …”
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8369
A Design of Real-Time Data Acquisition and Processing System for Nanosecond Ultraviolet-Visible Absorption Spectrum Detection
Published 2022-07-01“…The hardware of the data acquisition and processing system are constructed on a Xilinx Spartan 6 FPGA chip and its peripheral circuit, including an analog to digital converter and a complementary metal-oxide-semiconductor transistor (CMOS) sensor’s diver circuit. An oversampling method that is suitable for the CMOS sensor’s output is proposed, which works on the CMOS sensor’s dark current noise and readout noise. …”
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8370
Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> Heterojunction
Published 2021-03-01“…It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. …”
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8371
A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 4: The Effect of Humidity
Published 2024-02-01“…The TMOS is a micromachined CMOS-SOI transistor, which acts as the sensing element and is integrated with a catalytic reaction plate, where ignition of the gas takes place. …”
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8372
Enhanced Nitric Oxide Sensing Performance of Conjugated Polymer Films through Incorporation of Graphitic Carbon Nitride
Published 2023-01-01“…Organic field-effect transistor (OFET) gas sensors based on conjugated polymer films have recently attracted considerable attention for use in environmental monitoring applications. …”
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8373
All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing
Published 2022-02-01“…Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading “1” and “0”, respectively. …”
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8374
Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology
Published 2023-10-01“…Therefore, in this paper, an L-band highly integrated PA chip compatible with 3 W and 5 W output power is designed in InGaP/GaAs heterojunction bipolar transistor (HBT) technology combined with temperature-insensitive adaptive bias technology, class-F harmonic suppression technology, analog pre-distortion technology, temperature-insensitive adaptive power detection technology, and land grid array (LGA) packaging technology. …”
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8375
Interface Optimization and Transport Modulation of Sm<sub>2</sub>O<sub>3</sub>/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer
Published 2021-12-01“…Based on the measurement results, Sm<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.…”
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8376
Low-Power Long-Term Ambulatory Electrocardiography Monitor of Three Leads with Beat-to-Beat Heart Rate Measurement in Real Time
Published 2023-10-01“…The monitor presented is based in an ADS1294 analogue front end with four channels, 24-bit analog-to-digital converters and programmable gain amplifiers, a low-power dual-core ESP32 microcontroller, a microSD memory for data storage in a range of 4 GB to 32 GB and a 1.4 in thin-film transistor liquid crystal display (LCD) variant with a resolution of 128 × 128 pixels. …”
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8377
Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
Published 2023-02-01“…This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. …”
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8378
Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems
Published 2016“…We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. …”
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8379
Eletrônica Criativa: Uma estratégia metodológica para o Ensino e Aprendizagem de conceitos de eletricidade e/ou eletrônica na modalidade Híbrida de Ensino: Introdução
Published 2021-08-01“…Para os anos de 2021 e 2022 devemos oferecer um curso de Computação Física Avançado com carga horária mínima de 20 horas, voltados a professores multiplicadores, para tratar com maior grau de profundidade conteúdos de eletrônica, tais como, funcionamento de transistores e sua utilização para o funcionamento adequado de motores, limites de operação do simulador Tinkercad para o estudo de propriedades de diodos, uso de circuitos integrados como portas lógicas, dentre outros temas trazidos pelos professores cursistas, mediante a necessidade de seus projetos e planos de aula. …”
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8380
Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation
Published 2023-05-01“…The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. …”
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