Enhanced electrodynamic gating in two-dimensional transistors using ferroelectric capping by Hemendra Nath Jaiswal, Maomao Liu, Simran Shahi, Anthony Cabanillas, Sichen Wei, Yu Fu, Anindita Chakravarty, Asma Ahmed, Joel Muhigirwa, Fei Yao, Huamin Li

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Performance evaluation of SRAM design using different field effect transistors by C. Venkataiah, Y. Mallikarjuna Rao, Jayamma Manjula, M.K. Linga Murthy, S. Feroz Shah Ahmed, Alzubaidi Laith H.

“…In this work, we analysed the performance of the SRAM cell which are built with different field effect transistors and calculated the Write and Read delays, PDP (Power Delay Product) and Static Noise Margin (SNM) for all types of transistors. …”
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Organic nanofibers integrated by transfer technique in field-effect transistor devices by Tavares Luciana, Kjelstrup-Hansen Jakob, Thilsing-Hansen Kasper, Rubahn Horst-Günter

“…<p>Abstract</p> <p>The electrical properties of self-assembled organic crystalline nanofibers are studied by integrating these on field-effect transistor platforms using both top and bottom contact configurations. …”
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Amine Detection Using Organic Field Effect Transistor Gas Sensors by Panagiotis Mougkogiannis, Michael Turner, Krishna Persaud

Subjects: “…organic field effect transistor…”
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Study of Parameters Affecting Breakdown Voltage of Bipolar Static Induction Transistor by T. A. Ismailov, A. R. Shakhmaeva, B. A. Shangereeva

“…The article considers structural and technological parameters affecting breakdown voltage of a BSIT transistor cell. The main objective of the scientific research in that field is optimization of manufacturing techniques of power electronics transistor configurations in order to improve the instrument output characteristics and reliability. …”
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Selective Ion Sensing Organic Electrochemical Transistors Suitable for Blood Analysis by Xiang Meng, Tao Zou, Michael H. M. Chan, Danny Tat Ming Chan, Anderson Chun On Tsang, Gilberto Ka Kit Leung, Shiming Zhang, Paddy Kwok Leung Chan

“…Abstract Organic electrochemical transistors (OECTs) have gained considerable attention due to their ability to simultaneously transduce and amplify ion‐based biological signals into electronic signals in bioelectronics. …”
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Detection of Interleukin-6 Protein Using Graphene Field-Effect Transistor by Manoharan Arun Kumar, Ramasamy Jayavel, Shanmugam Mahalingam, Junghwan Kim, Raji Atchudan

Subjects: “…graphene field-effect transistor…”
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Recent advances in ion‐sensitive field‐effect transistors for biosensing applications by Xiaohao Ma, Ruiheng Peng, Wei Mao, Yuanjing Lin, Hao Yu

“…Abstract Over the past decades, considerable development and improvement can be observed in the area of the ion‐sensitive field‐effect transistor (ISFET) for biosensing applications. The mature semiconductor industry provides a solid foundation for the commercialization of the ISFET‐based sensors and extensive research has been conducted to improve the performance of ISFET, with a special research focus on the materials, device structures, and readout topologies. …”
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Advances in Multi‐Terminal Transistors as Reconfigurable Interconnections for Neuromorphic Sensing and Processing by Si En Ng, Sujaya Kumar Vishwanath, Jingting Yang, Srilakshmi Subramanian Periyal, Amoolya Nirmal, Nur Fadilah Jamaludin, Rohit Abraham John, Nripan Mathews

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Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors by Bernhard Stampfer, Franz Schanovsky, Tibor Grasser, Michael Waltl

“…Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically beneficial for their operating characteristics, such as switching speed and power consumption, but at the same time miniaturization also leads to increased variability among nominally identical devices. …”
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An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens by Donghoon Kim, Bo Jin, Sol-A Kim, Wonyeong Choi, Seonghwan Shin, Jiwon Park, Won-Bo Shim, Kihyun Kim, Jeong-Soo Lee

“…The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. …”
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Seventy-Five Years since the Point-Contact Transistor: Germanium Revisited by Efstratia N. Sgourou, Aspassia Daskalopulu, Lefteri H. Tsoukalas, George Stamoulis, Ruslan V. Vovk, Alexander Chroneos

“…The advent of the point-contact transistor is one of the most significant technological achievements in human history with a profound impact on human civilization during the past 75 years. …”
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Investigation on the Negative Capacitance Field Effect Transistor with Dual Ferroelectric Region by Jia-Fei Yao, Xue Han, Xin-Peng Zhang, Jin-Cheng Liu, Ming-Yuan Gu, Mao-Lin Zhang, Ke-Han Yu, Yu-Feng Guo

“…This paper proposes a new structure of the negative capacitance field effect transistor (NCFET), which features of the dual ferroelectric region (DFR) when compared to the conventional NCFET. …”
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Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors by Farhad Larki, Md Shabiul Islam, Arash Dehzangi, Mohammad Tariqul Islam, Hin Yong Wong

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Preparation of a Crosslinked Poly(imide-siloxane) for Application to Transistor Insulation by Hyeong-Joo Park, Ju-Young Choi, Seung-Won Jin, Seung-Hyun Lee, Yun-Je Choi, Dam-Bi Kim, Chan-Moon Chung

“…Insulated gate bipolar transistor (IGBT) is an important power device for the conversion, control, and transmission of semiconductor power, and is used in various industrial fields. …”
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Organic Electrochemical Transistor Immuno-Sensors for Spike Protein Early Detection by Mario Barra, Giovanna Tomaiuolo, Valeria Rachela Villella, Speranza Esposito, Aris Liboà, Pasquale D’Angelo, Simone Luigi Marasso, Matteo Cocuzza, Valentina Bertana, Elena Camilli, Valentina Preziosi

Subjects: “…organic electrochemical transistors…”
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Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors by Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa

“…This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three temperatures: 25 °C, 75 °C and 150 °C of GaN-on-Si power transistors. In particular, this study focuses on the temperature dependence of the depletion voltage seen in these characteristics due to the progressive depletion of the two-dimensional electron gas (2DEG) under the device field plates. …”
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Analytical model of carrier mobility in a Polymer Field Effect Transistor by Milošević Milan M., Ramović Rifat M.

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An Investigation of Process Variations and Mismatch Characteristics of Vertical Bipolar Junction Transistors by Xiaonian Liu, Zichen Yang

Subjects: “…Bipolar junction transistor (BJT)…”
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ZnO/graphene ambipolar transistor with low sub-threshold swing by Byeong-Hyeok Kim, Sang-Hyun Hong, Jang-Won Kang

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