-
941
Influence of Quality of Mounting Process of RF Transistors on Their Thermal Parameters and Lifetime
Published 2022-06-01“…The paper presents the results of investigations illustrating the influence of imperfections in the soldering process on thermal properties of transistors operating in RF (Radio Frequency) systems. …”
Get full text
Article -
942
PEDOT-Polyamine-Based Organic Electrochemical Transistors for Monitoring Protein Binding
Published 2023-02-01Subjects: “…organic electrochemical transistors…”
Get full text
Article -
943
III-V vertical nanowire transistor for ultra-low power applications
Published 2017Get full text
Thesis -
944
Design-space and scalable technology for GaN based power transistors
Published 2018Get full text
Thesis -
945
N-polar AlN buffer growth by MOVPE for transistor applications
Published 2019“…The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 × 104 owing to the low leakage of AlN buffer layers.…”
Get full text
Article -
946
Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
Published 2023Get full text
Article -
947
A.C. measurements with a depletion-mode charge-flow transistor
Published 2005Subjects: Get full text
Thesis -
948
Electric field engineering in GaN high electron mobility transistors
Published 2008Get full text
Thesis -
949
An organic thin-film transistor circuit for large-area temperature-sensing
Published 2009Get full text
Thesis -
950
Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
Published 2010“…In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax] and R [subscript ON]) with a synchronized pulsed I -V setup. …”
Get full text
Article -
951
-
952
Reliability of GaN high electron mobility transistors on silicon substrates
Published 2010Get full text
Thesis -
953
Physics of electrical degradation in GaN high electron mobility transistors
Published 2010Get full text
Thesis -
954
Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Published 2010Subjects: “…Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors…”
Get full text
Technical Report -
955
Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Published 2010Subjects: “…Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors…”
Get full text
Technical Report -
956
Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Published 2010Subjects: “…Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors…”
Get full text
Technical Report -
957
Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Published 2010Subjects: “…Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors…”
Get full text
Technical Report -
958
-
959
A study of through-silicon-via (TSV) induced transistor variation
Published 2011Get full text
Thesis -
960
RF Power Degradation of GaN High Electron Mobility Transistors
Published 2012“…We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. …”
Get full text
Article