Influence of Quality of Mounting Process of RF Transistors on Their Thermal Parameters and Lifetime by Krzysztof Górecki, Wojciech Kowalke, Przemysław Ptak

“…The paper presents the results of investigations illustrating the influence of imperfections in the soldering process on thermal properties of transistors operating in RF (Radio Frequency) systems. …”
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PEDOT-Polyamine-Based Organic Electrochemical Transistors for Monitoring Protein Binding by Marjorie Montero-Jimenez, Francisco L. Amante, Gonzalo E. Fenoy, Juliana Scotto, Omar Azzaroni, Waldemar A. Marmisolle

Subjects: “…organic electrochemical transistors…”
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III-V vertical nanowire transistor for ultra-low power applications by Zhao, Xin, Ph. D. Massachusetts Institute of Technology

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Design-space and scalable technology for GaN based power transistors by Piedra, Daniel, Ph. D. Massachusetts Institute of Technology

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N-polar AlN buffer growth by MOVPE for transistor applications by Lemettinen, Jori, Okumura, Hironori, Palacios, Tomas

“…The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 × 104 owing to the low leakage of AlN buffer layers.…”
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Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation by Yuan, Mengyang, Niroula, John, Xie, Qingyun, Rajput, Nitul S., Fu, Kai, Luo, Shisong, Das, Sagar Kumar, Iqbal, Abdullah Jubair Bin, Sikder, Bejoy, Isamotu, Mohamed Fadil, Oh, Minsik, Eisner, Savannah R., Senesky, Debbie G., Hunter, Gary W., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomás

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A.C. measurements with a depletion-mode charge-flow transistor by Garverick, Steven Lee

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Electric field engineering in GaN high electron mobility transistors by Zhao, Xu, S.M. Massachusetts Institute of Technology

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An organic thin-film transistor circuit for large-area temperature-sensing by He, David Da

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors by Joh, Jungwoo, del Alamo, Jesus A., Jimenez, Jose L., Tserng, Hua-Quen, Chou, Tso-Min, Chowdhury, Uttiya

“…In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax] and R [subscript ON]) with a synchronized pulsed I -V setup. …”
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A test structure for the measurement and characterization of layout-induced transistor variation by Chang, Albert Hsu Ting

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Reliability of GaN high electron mobility transistors on silicon substrates by Demirtas, Sefa

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Physics of electrical degradation in GaN high electron mobility transistors by Joh, Jungwoo

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Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors by del Alamo, Jesús A., Bahl, Sandeep R., Moolji, Akbar A., Cudjoe-Flanders, Charmaine A., Odoardi, Angela R.

Subjects: “…Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors…”
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Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors by del Alamo, Jesús A., Somerville, Mark H., Adams, Tracy E., Reiner, James W., Weinberg, Michael J.

Subjects: “…Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors…”
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Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors by del Alamo, Jesús A., Somerville, Mark H., Ernst, Alexander N., Zeidenberg, Lisa B.

Subjects: “…Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors…”
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Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors by del Alamo, Jesús A., Somerville, Mark H., Ernst, Alexander N., Nici, Kathleen A.

Subjects: “…Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors…”
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Fabrication and electrical characterization of transistors made from carbon nanotubes and graphene by Nezich, Daniel Andrew

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A study of through-silicon-via (TSV) induced transistor variation by Yu, Li, S.M. Massachusetts Institute of Technology

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RF Power Degradation of GaN High Electron Mobility Transistors by Joh, Jungwoo, del Alamo, Jesus A.

“…We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. …”
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