On the design of single electron transistors for the measurement of spins in phosphorus doped silicon by Randeria, Mallika

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Transistor Selection and Design of a VHF DC-DC Power Converter by Warren, James R., Rosowski, Kathryn Anne, Perreault, David J.

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The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects by del Alamo, Jesus A.

“…2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology. …”
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Optimization of Integrated Transistors for Very High Frequency DC-DC Converters by Sagneri, Anthony D., Anderson, David I., Perreault, David J.

“…A transistor model valid at VHF switching frequencies is developed. …”
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Dynamic ON-resistance in high voltage GaN field-effect-transistors by Jin, Donghyun

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Methodology for analysis of TSV stress induced transistor variation and circuit performance by Yu, Li, Chang, Wen-Yao, Zuo, Kewei, Wang, Jean, Yu, Douglas, Boning, Duane S.

“…Then, the biaxial stress is converted to mobility and threshold voltage variations depending on transistor type and geometric relation between TSVs and transistors. …”
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Resonant Body Transistors in IBM's 32nm SOI CMOS technology by Marathe, Radhika A., Wang, Wentao, Mahmood, Zohaib, Daniel, Luca, Weinstein, Dana

“…These Resonant Body Transistors (RBTs) are driven capacitively and sensed piezoresistively using an n-channel Field Effect Transistor (nFET). …”
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III–V compound semiconductor transistors—from planar to nanowire structures by Riel, Heike, Wernersson, Lars-Erik, Hong, Minghwei, del Alamo, Jesus A.

“…Their outstanding electron transport properties and the possibility to tune heterostructures provide tremendous opportunities to engineer novel nanometer-scale logic transistors. The scaling constraints require an evolution from planar III–V metal oxide semiconductor field-effect transistors (MOSFETs) toward transistor channels with a three-dimensional structure, such as nanowire FETs, to achieve future performance needs for complementary metal oxide semiconductor (CMOS) nodes beyond 10 nm. …”
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Complementary logic gate arrays based on carbon nanotube network transistors by Gao, Pingqi, Zou, Jianping, Li, Hong, Zhang, Kang, Zhang, Qing

“…An efficient technique of fabricating high performance n- and p- type single-walled carbon nanotube (SWNT) network field-effect transistors (NET-FETs) is successfully demonstrated. …”
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High-transconductance stretchable transistors achieved by controlled gold microcrack morphology by Matsuhisa, Naoji, Jiang, Ying, Liu, Zhiyuan, Chen, Geng, Wan, Changjin, Kim, Yeongin, Kang, Jiheong, Tran, Helen, Wu, Hung-Chin, You, Insang, Bao, Zhenan, Chen, Xiaodong

Subjects: “…Organic Electrochemical Transistors…”
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Highly sensitive gas sensor based on GaN transistor structure by Imran

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Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors by Radhakrishnan, K., Wang, Hong

“…In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtures. …”
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Electrical characterization of organic electrochemical transistors for flexible electronics 1.0 by Wong, Maurice Yew Hon

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Organic cocrystals : beyond electrical conductivities and field-effect transistors (FETs) by Huang, Yinjuan, Wang, Zongrui, Chen, Zhong, Zhang, Qichun

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Co-evaporated perovskite light-emitting transistor operating at room temperature by Klein, Maciej, Li, Jia, Bruno, Annalisa, Soci, Cesare

“…Solution-processed hybrid organic–inorganic perovskite light-emitting transistors (PeLETs) suffer from low brightness and environmental instability induced by temperature-activated trapping, ionic motion, and polarization effects, which so far have been hindering the realization of devices operating at room temperature. …”
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Real-time local muscle fatigue assessment using synaptic transistors by Pal, Mayank

“…For controlling the frequency regime, in which the transistor exhibits the synaptic characteristics, a novel method of gating the transistor with hydrogels of varying geometrical length has been shown. …”
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Printed metal oxide systems for high mobility thin film transistors by Chua, Ran Zhi Tong

“…The primary aim of the project was the utilization of a direct printing system to fabricate metal oxide systems for thin film transistor (TFT) application. Metal oxide systems such as In2O3 and IZO were used due to excellent properties such as high transparency, low cost, high throughput manufacturability, good mobility, and compatibility with flexible substrates…”
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Emulation of synaptic plasticity on cobalt-based synaptic transistor for neuromorphic computing by Monalisha, P., Kumar, Anil P. S., Wang, Renshaw Xiao, Piramanayagam, S. N.

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Datta-Das transistor for atomtronic circuits using artificial gauge fields by Madasu, Chetan Sriram, Hasan, Mehedi, Rathod, Ketan Damji, Kwong, Chang Chi, Wilkowski, David

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Thin gate oxide based carbon nanotube field effect transistors by Soh, Candy Shia Leng.

“…This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), aligning CNTs between electrodes and electrical breakdown. …”
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