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961
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962
Transistor Selection and Design of a VHF DC-DC Power Converter
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Article -
963
The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects
Published 2014“…2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology. …”
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Article -
964
Optimization of Integrated Transistors for Very High Frequency DC-DC Converters
Published 2014“…A transistor model valid at VHF switching frequencies is developed. …”
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Article -
965
Dynamic ON-resistance in high voltage GaN field-effect-transistors
Published 2014Get full text
Thesis -
966
Methodology for analysis of TSV stress induced transistor variation and circuit performance
Published 2014“…Then, the biaxial stress is converted to mobility and threshold voltage variations depending on transistor type and geometric relation between TSVs and transistors. …”
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Article -
967
Resonant Body Transistors in IBM's 32nm SOI CMOS technology
Published 2015“…These Resonant Body Transistors (RBTs) are driven capacitively and sensed piezoresistively using an n-channel Field Effect Transistor (nFET). …”
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Article -
968
III–V compound semiconductor transistors—from planar to nanowire structures
Published 2015“…Their outstanding electron transport properties and the possibility to tune heterostructures provide tremendous opportunities to engineer novel nanometer-scale logic transistors. The scaling constraints require an evolution from planar III–V metal oxide semiconductor field-effect transistors (MOSFETs) toward transistor channels with a three-dimensional structure, such as nanowire FETs, to achieve future performance needs for complementary metal oxide semiconductor (CMOS) nodes beyond 10 nm. …”
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Article -
969
Complementary logic gate arrays based on carbon nanotube network transistors
Published 2014“…An efficient technique of fabricating high performance n- and p- type single-walled carbon nanotube (SWNT) network field-effect transistors (NET-FETs) is successfully demonstrated. …”
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Journal Article -
970
High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
Published 2020Subjects: “…Organic Electrochemical Transistors…”
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Journal Article -
971
Highly sensitive gas sensor based on GaN transistor structure
Published 2020Get full text
Final Year Project (FYP) -
972
Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors
Published 2008“…In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtures. …”
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Research Report -
973
Electrical characterization of organic electrochemical transistors for flexible electronics 1.0
Published 2021Get full text
Final Year Project (FYP) -
974
Organic cocrystals : beyond electrical conductivities and field-effect transistors (FETs)
Published 2021Get full text
Journal Article -
975
Co-evaporated perovskite light-emitting transistor operating at room temperature
Published 2022“…Solution-processed hybrid organic–inorganic perovskite light-emitting transistors (PeLETs) suffer from low brightness and environmental instability induced by temperature-activated trapping, ionic motion, and polarization effects, which so far have been hindering the realization of devices operating at room temperature. …”
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Journal Article -
976
Real-time local muscle fatigue assessment using synaptic transistors
Published 2022“…For controlling the frequency regime, in which the transistor exhibits the synaptic characteristics, a novel method of gating the transistor with hydrogels of varying geometrical length has been shown. …”
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Thesis-Doctor of Philosophy -
977
Printed metal oxide systems for high mobility thin film transistors
Published 2022“…The primary aim of the project was the utilization of a direct printing system to fabricate metal oxide systems for thin film transistor (TFT) application. Metal oxide systems such as In2O3 and IZO were used due to excellent properties such as high transparency, low cost, high throughput manufacturability, good mobility, and compatibility with flexible substrates…”
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Final Year Project (FYP) -
978
Emulation of synaptic plasticity on cobalt-based synaptic transistor for neuromorphic computing
Published 2022Subjects: Get full text
Journal Article -
979
Datta-Das transistor for atomtronic circuits using artificial gauge fields
Published 2023Subjects: Get full text
Journal Article -
980
Thin gate oxide based carbon nanotube field effect transistors
Published 2009“…This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), aligning CNTs between electrodes and electrical breakdown. …”
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Final Year Project (FYP)