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1001
Positive bias-induced Vth instability in graphene field effect transistors
Published 2013“…In this letter, we report positive bias-induced Vth instability in single and multilayer graphene field effect transistors (GFETs) with back-gate SiO2 dielectric. …”
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Journal Article -
1002
Thermal oxidation of Ni films for p-type thin-film transistors
Published 2013“…p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. …”
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Journal Article -
1003
Studi Transistor BJT Tipe NPN untuk Mendeteksi Radiasi Alpha.
Published 2006“…The aim of this research is to study the possibility of a NPN transistor to be used as an alpha particle detector. …”
Article -
1004
Device characteristics of carbon nanotube transistor fabricated by direct growth method
Published 2008“…We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. …”
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Article -
1005
Hysteresis-free vacuum-processed acrylate-pentacene thin-film transistors
Published 2013“…The electrical characteristics of all-vacuum-processed pentacene thin-film transistors, with stable and reproducible performance, using high-throughput roll-to-roll processing have been demonstrated. …”
Journal article -
1006
Distinguishing lead and molecule states in graphene-based single-electron transistors
Published 2017Journal article -
1007
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Published 2013“…We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. …”
Journal article -
1008
Diamond based ion-sensitive field effect transistors for cellular biosensing
Published 2007“…In this context we have studied the operation of diamond-based ion-sensitive field effect transistors (ISFETs) within solutions of varying pH, and alkali-halide concentrations, In particular, we report the use of an inexpensive diamond substrate material, often referred to as 'black' diamond. pH sensitivity was observed when devices based on hydrogen-terminated p-type surfaces where employed, provide some surface oxidation was performed prior to their use. …”
Conference item -
1009
A comparative study of transistors based on wurtzite and zincblende InAs nanowires
Published 2010“…We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. …”
Conference item -
1010
Label-free sub-picomolar protein detection with field-effect transistors.
Published 2010“…Here, we report the integration of peptide aptamers with extended gate metal-oxide-semiconductor field-effect transistors (MOSFETs) to achieve label-free sub-picomolar target protein detection. …”
Journal article -
1011
Tunnel barrier fabrication on Si and its impact on a spin transistor
Published 2005“…A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. andCOPY; 2004 Elsevier B.V. …”
Conference item -
1012
Cryogenic rds(on) of a GaN power transistor at high currents
Published 2023“…Thermally stable operation at three times the room-temperature rating of the transistor is demonstrated at cryogenic temperatures.…”
Conference item -
1013
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Published 2013“…We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. …”
Journal article -
1014
Design of mixed ionic-electronic polymeric conductors for organic electrochemical transistors
Published 2021“…<p>Organic electrochemical transistors (OECTs) are electronic devices that have gained significant attention for many biomedical applications, including as electrophysiological recording elements, cell activity monitors, and biomolecule sensors. …”
Thesis -
1015
Hysteresis-Free Vacuum-Processed Acrylate-Pentacene Thin-Film Transistors
Published 2013“…In this study, we report on the electrical characteristics of all-vacuum-processed pentacene thin film transistors, with stable and reproducible performance, using high throughput roll-to-roll processing. …”
Journal article -
1016
Scaling behaviors of transient noise current in organic field-effect transistors
Published 2012“…Top-contact and bottom-gate organic field-effect transistors (OFETs) based on poly(3-hexylthiophene), P3HT polymer has been fabricated with thermal treatment condition. …”
Article -
1017
Hybrid carbon nanotube/polymer heterointerface organic field effect transistor
Published 2014“…Hybrid carbon nanotube/polymer heterointerface field effect transistor is developed by drop-casting carbon nanotubes on top of the semiconducting polymer. …”
Article -
1018
VTP as an Active Layer in a Vertical Organic Field Effect Transistor
Published 2018“…Prior to the fabrication of a vertical organic field effect transistor (VOFET), fundamental work in investigating the energy level of VTP has been done through determination of oxidation and reduction potentials. …”
Article -
1019
Digital-controlled multimode multiband power amplifier with multiple gated transistor
Published 2017“…In this work, a two-stage single-chip MMMB power amplifier (PA) with multiple gated transistor technique has been designed to obtain dual-mode output power options, with its input matching and intermediate matching networks made tunable to enable switching of the PA output between low-band and high-band frequencies. …”
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Article -
1020
Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
Published 2010“…In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns. …”
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Conference or Workshop Item