Positive bias-induced Vth instability in graphene field effect transistors by Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Ng, Geok Ing, Yu, Hongyu

“…In this letter, we report positive bias-induced Vth instability in single and multilayer graphene field effect transistors (GFETs) with back-gate SiO2 dielectric. …”
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Thermal oxidation of Ni films for p-type thin-film transistors by Wang, Xinghui, Zhang, Qing, Jiang, Jie, Li, Jingqi, Zhang, X. X.

“…p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. …”
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Studi Transistor BJT Tipe NPN untuk Mendeteksi Radiasi Alpha. by Perpustakaan UGM, i-lib

“…The aim of this research is to study the possibility of a NPN transistor to be used as an alpha particle detector. …”

Device characteristics of carbon nanotube transistor fabricated by direct growth method by Inami, Nobuhito, Mohamed, Mohd Ambri, Shikoh, Eiji, Fujiwara, Akihiko

“…We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. …”
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Hysteresis-free vacuum-processed acrylate-pentacene thin-film transistors by Abbas, G, Ding, Z, Mallik, K, Assender, H, Taylor, D

“…The electrical characteristics of all-vacuum-processed pentacene thin-film transistors, with stable and reproducible performance, using high-throughput roll-to-roll processing have been demonstrated. …”

Distinguishing lead and molecule states in graphene-based single-electron transistors by Gehring, P, Sowa, J, Cremers, J, Wu, Q, Sadeghi, H, Sheng, Y, Warner, J, Lambert, C, Briggs, G, Mol, J

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors by Ullah, A, Burke, A, Micolich, A, Joyce, H, Wong-Leung, J, Tan, H, Jagadish, C

“…We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. …”

Diamond based ion-sensitive field effect transistors for cellular biosensing by Bennett, A, Gaudin, O, Williams, O, Foord, J, Jackman, R

“…In this context we have studied the operation of diamond-based ion-sensitive field effect transistors (ISFETs) within solutions of varying pH, and alkali-halide concentrations, In particular, we report the use of an inexpensive diamond substrate material, often referred to as 'black' diamond. pH sensitivity was observed when devices based on hydrogen-terminated p-type surfaces where employed, provide some surface oxidation was performed prior to their use. …”

A comparative study of transistors based on wurtzite and zincblende InAs nanowires by Williams, M, Burke, A, Joyce, H, Micolich, A, Tan, H, Jagadish, C

“…We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. …”

Label-free sub-picomolar protein detection with field-effect transistors. by Estrela, P, Paul, D, Song, Q, Stadler, L, Wang, L, Huq, E, Davis, J, Ko Ferrigno, P, Migliorato, P

“…Here, we report the integration of peptide aptamers with extended gate metal-oxide-semiconductor field-effect transistors (MOSFETs) to achieve label-free sub-picomolar target protein detection. …”

Tunnel barrier fabrication on Si and its impact on a spin transistor by Dennis, C, Tiusan, C, Ferreira, R, Gregg, J, Ensell, G, Thompson, S, Freitas, P

“…A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. andCOPY; 2004 Elsevier B.V. …”

Cryogenic rds(on) of a GaN power transistor at high currents by Bruford, J, Rogers, DJ, Rodriguez, T

“…Thermally stable operation at three times the room-temperature rating of the transistor is demonstrated at cryogenic temperatures.…”

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors by Ullah, A, Joyce, H, Burke, A, Wong-Leung, J, Tan, H, Jagadish, C, Micolich, A

“…We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. …”

Design of mixed ionic-electronic polymeric conductors for organic electrochemical transistors by Moser, M

“…<p>Organic electrochemical transistors (OECTs) are electronic devices that have gained significant attention for many biomedical applications, including as electrophysiological recording elements, cell activity monitors, and biomolecule sensors. …”

Hysteresis-Free Vacuum-Processed Acrylate-Pentacene Thin-Film Transistors by Abbas, G, Ding, Z, Mallik, K, Assender, H, Taylor, D

“…In this study, we report on the electrical characteristics of all-vacuum-processed pentacene thin film transistors, with stable and reproducible performance, using high throughput roll-to-roll processing. …”

Scaling behaviors of transient noise current in organic field-effect transistors by Choo, K.Y., Muniandy, S.V., Chua, C.L., Woon, K.L.

“…Top-contact and bottom-gate organic field-effect transistors (OFETs) based on poly(3-hexylthiophene), P3HT polymer has been fabricated with thermal treatment condition. …”

Hybrid carbon nanotube/polymer heterointerface organic field effect transistor by Chua, C.L., Yeoh, K.H., Woon, K.L.

“…Hybrid carbon nanotube/polymer heterointerface field effect transistor is developed by drop-casting carbon nanotubes on top of the semiconducting polymer. …”

VTP as an Active Layer in a Vertical Organic Field Effect Transistor by Roslan, Nur Adilah, Abdullah, Shahino Mah, Halizan, Muhammad Zharfan Mohd, Bawazeer, Tahani M., Alsenany, Nourah, Alsoufi, Mohammad S., Abdul Majid, Wan Haliza, Supangat, Azzuliani

“…Prior to the fabrication of a vertical organic field effect transistor (VOFET), fundamental work in investigating the energy level of VTP has been done through determination of oxidation and reduction potentials. …”

Digital-controlled multimode multiband power amplifier with multiple gated transistor by Thangasamy, Veeraiyah, Kamsani, Noor Ain, Hamidon, Mohd Nizar, Hashim, Shaiful Jahari, Yusoff, Zubaida, Bukhori, Muhammad Faiz

“…In this work, a two-stage single-chip MMMB power amplifier (PA) with multiple gated transistor technique has been designed to obtain dual-mode output power options, with its input matching and intermediate matching networks made tunable to enable switching of the PA output between low-band and high-band frequencies. …”
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Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. by Abdullah, A. Makarimi, Hutagalung, Sabar D., Lockman, Zainovia

“…In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns. …”
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