Design And Characterization Of Silicon Nanowire Transistor And Logic Nanowire Inverter Circuits by Naif, Yasir Hashim

“…To mitigate this problem, there are new types of transistors with a 3D structure, including silicon nanowire transistors (SiNWT). …”
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Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor by Mahdiar, Hosseinghadiry

“…In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors (GNRFET) is needed to investigate the limits on operating voltage of the transistor. …”
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Nonlinear analysis for performance characterization of heterojunction bipolar transistor optoelectronic mixer by Mohamed, N., Idrus, Sevia Mahdaliza, Mohammad, Abu Bakar, Harun, H.

Electronic structures of silicon quantum dots as nanoclusters for single electron transistors by Lee, Jia Yen

“…Finally, the currentvoltage (I-V) characteristic and conductance-voltage spectrum (G-V) of singleelectron transistor (SET) were studied with a simple toy model. …”
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High voltage nanosecond pulse switching circuit based on avalanche transistor by Tamuri, Abd. Rahman, Mat Daud, Yaacob, Bidin, Noriah

“…A very high speed switching circuit in kilovolt regime has been applied in laser diode driver, streak camera and laser Q-switching. The avalanche transistor is ideally suits to this mode operation and application. …”
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The sub-band effect on the graphene nanoribbon based field-effect transistor by Kiat, Wong King, Ahmadi, Mohammad Taghi, Ismail, Razali

“…Such characteristic is desired in the transistor manufacturing. However pure graphene is not suitable to be directly used in manufacturing of transistor. …”

Analytical modeling of carbon nanotube transistor based biosensor for glucose detection by Hosseingholipourasl, Ali

“…In this study, a single-wall carbon nanotube field-effect transistor (SWCNT FET) biosensor for glucose detection is analytically modelled. …”
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Modelling and simulation of saturation region in double gate graphene nanoribbon transistors by Ghadiry, Mahdiar H., Nadi, Mahdieh S., Rahmani, Meisam, Abd. Manaf, Asrulnizam

“…Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. …”

Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor by Hamzah, Muhammad Afiq Nurudin

“…In addition, the emergence of Carbon Nanotube (CNT) in the past two decades has been a remarkable breakthrough in solving for transistor SCE; but there has also been a problem in controlling its band gap energy. …”
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Carbon nanotube field-effect transistor for a low noise amplifier by Ngu, Kek Siang

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Gfetsim: Graphene field-effect transistor simulator of interface charge density by Leong, C. H., Chin, H. C., Ang, C. W., Ng, C. K., Najam, F., Lim, C. S., Tan, S. C., Tan, M. L. P.

“…Consequently, interface charge density in graphene field-effect transistors has become an important area of research in order to more accurately determine electronic characteristics such as capacitance-voltage (C-V). …”

Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature by Khadem Hosseini, V., Ahmadi, M. T., Ismail, R.

“…The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. …”

ZnO thin film transistor: effect of traps and grain boundaries by Mohamed Sultan, Suhana

Quantum current modeling with two quantum dot based on schottky transistors by Hedayat, Seyed Norollah, Ahmadi, Mohammad Taghi, Ismail, Razali

“…Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors, and fluorine because of its sustainability is one of the best materials inter alia. …”

Modelling and simulation of 2d aluminium-doped silicene transport properties in field-effect transistors by Chuan, Mu Wen

Subjects: “…Transistors—Materials…”
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Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future by Immanuel N. Jiya, Rupert Gouws

Subjects: “…bipolar transistors…”
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A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor by Lew, Kim Luong.

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Practical analysis of amplifier circuit through experimentation / by 184322 Macdonald, Lorne

Subjects: “…Transistor circuits…”

Low power p-n-p, 60 V, 500 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation by 8096 British Standards Institution

Subjects: “…Transistor amplifiers…”
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Detail specification of low noise, low paper p-n-p, 40 V, 300 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation by 8096 British Standards Institution

Subjects: “…Transistor amplifiers…”