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1021
Design And Characterization Of Silicon Nanowire Transistor And Logic Nanowire Inverter Circuits
Published 2013“…To mitigate this problem, there are new types of transistors with a 3D structure, including silicon nanowire transistors (SiNWT). …”
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Thesis -
1022
Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
Published 2014“…In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors (GNRFET) is needed to investigate the limits on operating voltage of the transistor. …”
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Thesis -
1023
Nonlinear analysis for performance characterization of heterojunction bipolar transistor optoelectronic mixer
Published 2009Book Section -
1024
Electronic structures of silicon quantum dots as nanoclusters for single electron transistors
Published 2008“…Finally, the currentvoltage (I-V) characteristic and conductance-voltage spectrum (G-V) of singleelectron transistor (SET) were studied with a simple toy model. …”
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Thesis -
1025
High voltage nanosecond pulse switching circuit based on avalanche transistor
Published 2008“…A very high speed switching circuit in kilovolt regime has been applied in laser diode driver, streak camera and laser Q-switching. The avalanche transistor is ideally suits to this mode operation and application. …”
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Article -
1026
The sub-band effect on the graphene nanoribbon based field-effect transistor
Published 2012“…Such characteristic is desired in the transistor manufacturing. However pure graphene is not suitable to be directly used in manufacturing of transistor. …”
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1027
Analytical modeling of carbon nanotube transistor based biosensor for glucose detection
Published 2014“…In this study, a single-wall carbon nanotube field-effect transistor (SWCNT FET) biosensor for glucose detection is analytically modelled. …”
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Thesis -
1028
Modelling and simulation of saturation region in double gate graphene nanoribbon transistors
Published 2012“…Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. …”
Article -
1029
Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
Published 2014“…In addition, the emergence of Carbon Nanotube (CNT) in the past two decades has been a remarkable breakthrough in solving for transistor SCE; but there has also been a problem in controlling its band gap energy. …”
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Thesis -
1030
Carbon nanotube field-effect transistor for a low noise amplifier
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Thesis -
1031
Gfetsim: Graphene field-effect transistor simulator of interface charge density
Published 2017“…Consequently, interface charge density in graphene field-effect transistors has become an important area of research in order to more accurately determine electronic characteristics such as capacitance-voltage (C-V). …”
Article -
1032
Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature
Published 2017“…The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. …”
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1033
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1034
Quantum current modeling with two quantum dot based on schottky transistors
Published 2018“…Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors, and fluorine because of its sustainability is one of the best materials inter alia. …”
Article -
1035
Modelling and simulation of 2d aluminium-doped silicene transport properties in field-effect transistors
Published 2023Subjects: “…Transistors—Materials…”
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Thesis -
1036
Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future
Published 2020-12-01Subjects: “…bipolar transistors…”
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Article -
1037
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1038
Practical analysis of amplifier circuit through experimentation /
Published 1975Subjects: “…Transistor circuits…”
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1039
Low power p-n-p, 60 V, 500 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
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1040