Top-down fabrication and characterization of zinc oxide nanowire field effect transistors / by Suhana Mohamed Sultan, author, University of Southampton

Arithmetic logic unit design for silicon nanowire field-effect transistors logic / by Nor Hafizah Mohd. Munir Zahari, 1982- author, Tan, Michael Loong Peng, Fakulti Kejuruteraan Elektrik

Subjects: “…Transistor circuits…”

Design of analog modules using carbon nanotube field effect transistor (CNFET) / by Lee, Lih Shiuan, 1985- , author, Abu Khari A'Ain, supervisor, Fakulti Kejuruteraan Elektrik

Subjects:

Theoretical modeling of efficient charge transport materials for organic field effect transistors / by Aijaz Rasool Chaudhry, 1972-, author 596277, Rashid Ahmed, supervisor 384257, Amiruddin Shaari, supervisor 228360, Irfan Ahmad, supervisor 596278, Fakulti Sains 8004

Modeling and simulation of strained graphene nanoribbon field effect transistor [electronic resource] / by Nurul Aida Izuani Che Rosid, 1988-, author 600635

Simulation of single electron transistor (SET) circuits using Monte Carlo method / by 246431 Syabani Ahmad

Subjects: “…Transistors…”
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Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions by Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap

“…The tremendous downscaling of the transistors' dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality and enhanced performance of integrated circuits (ICs). …”
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Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor by Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap

“…In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). …”
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Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions by Hani Taha, Abd Assamad Al Ariqi

“…Amongst various sensing and monitoring technologies, sensors based on field effect transistors (FETs) have attracted considerable attention from both the industry and academia. …”
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Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor by Yaser M. Banadaki, Ashok Srivastava

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Investigation of the Power Grid Accuracy by CMOS Transistor Network using Matlab/ Simulink by Shahir Fleyeh Nawaf, Mohammed Khalaf Hussein, Sabah Sadeem, Shaker Mahmud Faysal

“…The ideal network consists of millions of transistors, which act as energy consumers. This large number makes them complex in terms of design and analysis. …”
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Peculiar transient behaviors of organic electrochemical transistors governed by ion injection directionality by Ji Hwan Kim, Roman Halaksa, Il-Young Jo, Hyungju Ahn, Peter A. Gilhooly-Finn, Inho Lee, Sungjun Park, Christian B. Nielsen, Myung-Han Yoon

“…In this research, we investigated the effect of ion injection directionality on transient electrochemical transistor behaviors by developing a model mixed conductor system. …”
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Recent Advances in Transistor-Based Bionic Perceptual Devices for Artificial Sensory Systems by Hongli Yu, Yixin Zhu, Li Zhu, Xinhuang Lin, Qing Wan

Subjects: “…transistor-based bionic perceptual devices…”
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Exact Relationship between Black Phosphorus Thickness and Behaviors of Field-Effect Transistors by Liefeng Feng, Kaijin Liu, Miaoyu Wang

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Fully transparent field-effect transistor with high drain current and on-off ratio by Jisung Park, Hanjong Paik, Kazuki Nomoto, Kiyoung Lee, Bo-Eun Park, Benjamin Grisafe, Li-Chen Wang, Sayeef Salahuddin, Suman Datta, Yongsung Kim, Debdeep Jena, Huili Grace Xing, Darrell G. Schlom

“…We report a fully transparent thin-film transistor utilizing a La-doped BaSnO3 channel layer that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5 × 108. …”
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All-Plastic Electrochemical Transistor for Glucose Sensing Using a Ferrocene Mediator by George G. Malliaras, Maria Nikolou, Róisín M. Owens, John A. DeFranco, Na Young Shim, Daniel A. Bernards, Daniel J. Macaya

Subjects: “…organic electrochemical transistor…”
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Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing by Zahrah Alqahtani, Nawal Alghamdi, Thomas J. Robshaw, Robert Dawson, Mark D. Ogden, Alastair Buckely, Martin Grell

“…We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes for water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading of a commercial macroporous aminophosphonic acid resin, Puromet^TM MTS9501, and were filled into a plasticised poly(vinyl chloride) (PVC) phase transfer membrane. …”
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Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors by Hyunjoon Jeong, Sangmin Woo, Jinyoung Choi, Hyungmin Cho, Yohan Kim, Jeong-Taek Kong, Soyoung Kim

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Simplified detection of the hybridized DNA using a graphene field effect transistor by Arun Kumar Manoharan, Shanmugavel Chinnathambi, Ramasamy Jayavel, Nobutaka Hanagata

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Compact Analog Chaotic Map Designs Using SOI Four-Gate Transistors by Maisha Sadia, Partha Sarathi Paul, Md. Sakib Hasan

“…The multi-gate structure of G ⁴FET is leveraged to obtain four independent bifurcation parameters in the chaotic map with a simple three-transistor design. A chaotic oscillator design is proposed using this discrete-time chaotic map circuit, and the chaotic behavior is evaluated using bifurcation plot, Lyapunov exponent (LE), Correlation coefficient, Shannon entropy, and Stability analysis. …”
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