Organic electrochemical transistors printed from degradable materials as disposable biochemical sensors by Nicolas Fumeaux, Claudio Pinto Almeida, Silvia Demuru, Danick Briand

“…In this work, we present the development of an organic electrochemical transistor (OECT) with degradable electrodes, printed on an eco- and bioresorbable substrate. …”
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Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap by Ali Naderi, Maryam Ghodrati

Subjects: “…tunneling carbon nanotube field effects transistor…”
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A novel PMOS transistors based first-order all-pass network by Bhartendu Chaturvedi, Jitendra Mohan, Shiv Narain Gupta

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Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic by Chern, Winston

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Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application by Nourbakhsh, Amirhasan, Zubair, Ahmad, Dresselhaus, Mildred, Palacios, Tomas

“…The sign change in transconductance is particularly useful for multivalued logic (MVL) circuits, and we therefore propose and demonstrate for the first time an MVL-inverter that shows three levels of logic using one pair of p-type transistors.…”
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GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD by Heidelberger, Christopher, Fitzgerald, Eugene A

“…Heterojunction bipolar transistors with GaAs[subscript x]P[subscript 1−x] bases and collectors and In[subscript y]Ga[subscript 1−y]P emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. …”
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Flexible and solution-processed organic thin film transistors for high voltage applications by Shih, Andy

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Investigation of reverse recovery effects on the SOA of integrated high frequency power transistors by Rajagopal, Krishna, Concannon, Ann, Hower, Phil, Farbiz, Farzan, Salman, Akram, Arch, John, Elo, Peter

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Advances in Carbon Nanotube Technologies: from Transistors to a RISC-V Microprocessor by Christian Lau, Mindy D. Bishop, Tathagata Srimani, Pritpal Kanhaiya, Rebecca Ho, Aya Amer, Max M. Shulaker, Gage

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Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors by Shih, Pao-Chuan, Perozek, Joshua, Akinwande, Akintunde I., Palacios, Tomás

“…Field-emission-based vacuum transistors have been proposed as promising candidates for future high-power and harsh-environment electronic devices. …”
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Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design by Cline, Julia Van Meter, 1979-

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Process development for a silicon planar resonant-tunneling field-effect transistor by Chou, Mike Chuan, 1969-

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Optimization of power and delay in VLSI circuits using transistor sizing and input ordering by Tan, Chin Hwee

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Vertical profile engineering and reliability study of silicon-germanium heterojunction bipolar transistors by Liao, Kenneth S. (Kenneth Sen-Chun)

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Toxic gas sensors using thin film transistor platform at low temperature by Jin, Yoonsil

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Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition by Keast, Craig L., Wyatt, Peter W., Kong, Jing, Reina, Alfonso, Hsu, Pei-Lan, Healey, Paul D., Kedzierski, Jakub T.

Subjects: “…graphene transistors…”
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Low temperature lithographically patterned metal oxide transistors for large area electronics by Wang, Annie I. (Annie I-Jen), 1981-

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Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors by Demirtas, Sefa, del Alamo, Jesus A.

“…We have performed V[subscript DS] = 0 V and OFF-state step-stress experiments on GaN-on-Si and GaN-on-SiC high electron mobility transistors under UV illumination and in the dark. We have found that for both stress conditions, UV illumination decreases the critical voltage for the onset of degradation in gate current in GaN-on-Si HEMTs in a pronounced way, but no such decrease is observed on SiC. …”
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Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes by Feng, Y., Lee, K., Farhat, Hootan, Kong, Jing

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pH sensing properties of graphene solution-gated field-effect transistors by Mailly-Giacchetti, Benjamin, Hsu, Allen Long, Wang, Han, Vinciguerra, Vincenzo, Pappalardo, Francesco, Occhipinti, Luigi, Guidetti, Elio, Coffa, Salvatore, Kong, Jing, Palacios, Tomas

“…The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. …”
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